Impact of oxygen plasma treatment on the dynamic on-resistance of AlGaN/GaN high-electron-mobility transistors

What is it about?

We studied the effects of pre-passivation oxygen plasma treatment of the AlGaN surface on the current collapse of AlGaN/GaN high-electron-mobility transistors (HEMTs). Oxygen plasma-treated devices generally exhibited significantly less dynamic on-resistance (R-on) compared with untreated control devices. We also extended our investigation to HEMTs with a GaN cap layer. Interestingly, after oxygen plasma treatment, we found that GaN-capped HEMTs showed a dynamic R-on behavior that was essentially similar to that of oxygen plasma-treated uncapped HEMTs, suggesting that the GaN cap layer plays an inconsequential role in current collapse mitigation when employed in conjunction with oxygen plasma treatment.

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