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  1. Mist chemical vapor deposited-gate insulators for GaN-based MIS devices applications

    Article • November 2022, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Zenji Yatabe

  2. Evidence of reduced interface states in Al2O3/AlGaN MIS structures via insertion of ex situ regrown AlGaN layer

    Article • Applied Physics Express, September 2022, Institute of Physics Publishing

    Dr Zenji Yatabe

  3. Electrical properties of GaN-based MIS-HEMTs with Al2O3 gate insulator deposited by ALD and mist-CVD techniques

    Article • November 2021, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Zenji Yatabe

  4. Recessed gate GaN-based MIS-HEMTs with Al2O3 gate dielectric deposited by mist-CVD method

    Article • November 2021, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Zenji Yatabe

  5. Mist chemical vapor deposited-Al2O3/AlGaN interfacial characterization for GaN MIS-HEMTs

    Article • November 2021, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Zenji Yatabe

  6. Ornstein–Uhlenbeck process in a human body weight fluctuation

    Article • Physica A Statistical Mechanics and its Applications, November 2021, Elsevier

    Dr Zenji Yatabe

  7. Controlling surface/interface states in GaN-based transistors: Surface model, insulated gate, and surface passivation

    Article • Journal of Applied Physics, March 2021, American Institute of Physics

    Dr Zenji Yatabe, Dagmar Gregusova

  8. GaN-based MIS-HEMTs with Al2O3 dielectric deposited by low-cost and environmental-friendly mist-CVD technique

    Article • Applied Physics Express, February 2021, Institute of Physics Publishing

    Dr Zenji Yatabe

  9. Inverse integral transformation method to derive local viscosity distribution measured by optical tweezers

    Article • Soft Matter, January 2020, Royal Society of Chemistry

    Dr Zenji Yatabe

  10. Structural characterization of mist chemical vapor deposited amorphous aluminum oxide films using water-free solvent

    Article • Journal of the Ceramic Society of Japan, August 2019, Ceramic Society of Japan

    Dr Zenji Yatabe

  11. On the presence of Ga2O sub-oxide in high-pressure water vapor annealed AlGaN surface by combined XPS and first-principles methods

    Article • Applied Surface Science, July 2019, Elsevier

    Dr Zenji Yatabe

  12. Synthesis and characterization of mist chemical vapor deposited aluminum titanium oxide films

    Article • Japanese Journal of Applied Physics, June 2019, Japan Society of Applied Physics

    Dr Zenji Yatabe

  13. Characterization of amorphous aluminium oxide thin films synthesized by mist-CVD

    Article • May 2019, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Zenji Yatabe

  14. Effect of Buffer Layer on Improvement of SnO2 Thin Film on Sapphire Substrate Formed by Mist Chemical Vapor Deposition

    Article • May 2019, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Zenji Yatabe

  15. Synthesis and characterization of AlTiO films by mist-CVD

    Article • May 2019, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Zenji Yatabe

  16. Improved linearity, stability, and thermal performance of multi-mesa-channel AlGaN/GaN HEMTs

    Article • December 2018, Physics Society of the Philippines (Samahang Pisika Ng Pilipinas)

    Dr Zenji Yatabe

  17. Structural characteristics of a non-polar ZnS layer on a ZnO buffer layer formed on a sapphire substrate by mist chemical vapor deposition

    Article • Japanese Journal of Applied Physics, May 2018, Japan Society of Applied Physics

    Dr Zenji Yatabe

  18. State of the art on gate insulation and surface passivation for GaN-based power HEMTs

    Article • Materials Science in Semiconductor Processing, May 2018, Elsevier

    Dr Zenji Yatabe

  19. Analytical derivation of charge relaxation time distribution in transistor from current noise spectrum using inverse integral transformation method

    Article • Applied Physics Express, February 2018, Japan Society of Applied Physics

    Dr Zenji Yatabe

  20. Epitaxial Growth of Non-polar ZnS on Sapphire Substrate by Mist Chemical Vapor Deposition

    Article • September 2017, Japan Society of Applied Physics

    Dr Zenji Yatabe

  21. Influence of oxygen-plasma treatment on AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with HfO2by atomic layer deposition: leakage current and density of states reduction

    Article • Semiconductor Science and Technology, March 2017, Institute of Physics Publishing

    Dr Zenji Yatabe

  22. Improvement of m -plane ZnO films formed on buffer layers on sapphire substrates by mist chemical vapor deposition

    Article • physica status solidi (a), January 2017, Wiley

    Dr Zenji Yatabe

  23. On the origin of interface states at oxide/III-nitride heterojunction interfaces

    Article • Journal of Applied Physics, December 2016, American Institute of Physics

    Dr Zenji Yatabe

  24. Single crystalline SnO2 thin films grown on m -plane sapphire substrate by mist chemical vapor deposition

    Article • physica status solidi c, November 2016, Wiley

    Dr Zenji Yatabe

  25. Highly-stable and low-state-density Al2O3/GaN interfaces using epitaxial n-GaN layers grown on free-standing GaN substrates

    Article • Applied Physics Letters, October 2016, American Institute of Physics

    Dr Zenji Yatabe

  26. Effects of Electronic States at Insulator/AlGaN Interfaces on Threshold Voltage Instability of Al2O3/AlGaN/GaN Structures

    Article • September 2016, Japan Society of Applied Physics

    Dr Zenji Yatabe

  27. Insulated gate and surface passivation structures for GaN-based power transistors

    Article • Journal of Physics D Applied Physics, September 2016, Institute of Physics Publishing

    Dr Zenji Yatabe

  28. Improvement of m-plane ZnO films formed on buffer layers on sapphire substrates by mist chemical vapor deposition

    Article • June 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Zenji Yatabe

  29. SnO2 thin films grown on m-plane sapphire substrate by mist chemical vapor deposition

    Article • June 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Zenji Yatabe

  30. Characterization of capture cross sections of interface states in dielectric/III-nitride heterojunction structures

    Article • Journal of Applied Physics, May 2016, American Institute of Physics

    Dr Zenji Yatabe

  31. Formation of GaN porous structures with improved structural controllability by photoassisted electrochemical etching

    Article • Japanese Journal of Applied Physics, March 2016, Japan Society of Applied Physics

    Dr Zenji Yatabe

  32. Impact of oxygen plasma treatment on the dynamic on-resistance of AlGaN/GaN high-electron-mobility transistors

    Article • Applied Physics Express, October 2015, Japan Society of Applied Physics

    Dr Zenji Yatabe

  33. Bias-dependent Photoabsorption Properties of GaN Porous Structures under Back-side Illumination

    Article • ECS Transactions, October 2015, The Electrochemical Society

    Dr Zenji Yatabe

  34. Large photocurrents in GaN porous structures with a redshift of the photoabsorption edge

    Article • Semiconductor Science and Technology, October 2015, Institute of Physics Publishing

    Dr Zenji Yatabe

  35. Formation of Self-aligned Pore Arrays on n-GaN Substrates by Photo-assisted Electrochemical Etching Process

    Article • September 2015, Japan Society of Applied Physics

    Dr Zenji Yatabe

  36. Current Collapse Reduction in AlGaN/GaN HEMTs by High-Pressure Water Vapor Annealing

    Article • IEEE Transactions on Electron Devices, August 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Zenji Yatabe

  37. Formation of GaN-Porous Structures Using Photo-Assisted Electrochemical Process in Back-Side Illumination Mode

    Article • ECS Electrochemistry Letters, March 2015, The Electrochemical Society

    Dr Zenji Yatabe

  38. Calculating relaxation time distribution function from power spectrum based on inverse integral transformation method

    Article • Physics Letters A, March 2015, Elsevier

    Dr Zenji Yatabe

  39. Interface trap states in Al2O3/AlGaN/GaN structure induced by inductively coupled plasma etching of AlGaN surfaces

    Article • physica status solidi (a), November 2014, Wiley

    Dr Zenji Yatabe

  40. Characterization of electronic states at insulator/(Al)GaN interfaces for improved insulated gate and surface passivation structures of GaN-based transistors

    Article • Japanese Journal of Applied Physics, September 2014, Japan Society of Applied Physics

    Dr Zenji Yatabe

  41. Reduced thermal resistance in AlGaN/GaN multi-mesa-channel high electron mobility transistors

    Article • Applied Physics Letters, August 2014, American Institute of Physics

    Dr Zenji Yatabe

  42. Correlation between Structural and Photoelectrochemical Properties of GaN Porous Nanostructures Formed by Photo-Assisted Electrochemical Etching

    Article • Journal of The Electrochemical Society, January 2014, The Electrochemical Society

    Dr Zenji Yatabe

  43. Interface Characterization and Control of GaN-based Heterostructures

    Article • Hyomen Kagaku, January 2014, Surface Science Society Japan

    Dr Zenji Yatabe

  44. Characterization of interface states in Al2O3/AlGaN/GaN structures for improved performance of high-electron-mobility transistors

    Article • Journal of Applied Physics, December 2013, American Institute of Physics

    Dr Zenji Yatabe

  45. Investigation on optical absorption properties of electrochemically formed porous InP using photoelectric conversion devices

    Article • Applied Surface Science, August 2013, Elsevier

    Dr Zenji Yatabe

  46. Formation and Photoelectrical Measurements of Pt Schottky Interfaces on InP Porous Structures

    Article • ECS Transactions, April 2013, The Electrochemical Society

    Dr Zenji Yatabe

  47. Effects of Cl2-Based Inductively Coupled Plasma Etching of AlGaN on Interface Properties of Al2O3/AlGaN/GaN Heterostructures

    Article • Applied Physics Express, January 2013, Japan Society of Applied Physics

    Dr Zenji Yatabe

  48. Interface characterization of Al2O3/AlGaN/GaN structure with inductively coupled plasma etching of AlGaN surface

    Article • September 2012, Japan Society of Applied Physics

    Dr Zenji Yatabe

  49. Characterization of Low-Frequency Noise in Etched GaAs Nanowire Field-Effect Transistors Having SiN$_{x}$ Gate Insulator

    Article • Japanese Journal of Applied Physics, June 2012, Japan Society of Applied Physics

    Dr Zenji Yatabe

  50. Characterization of Low-Frequency Noise in Etched GaAs Nanowire Field-Effect Transistors Having SiNxGate Insulator

    Article • Japanese Journal of Applied Physics, June 2012, Japan Society of Applied Physics

    Dr Zenji Yatabe

  51. Large photocurrent-response observed at Pt/InP Schottky interface formed on anodic porous structure

    Article • Thin Solid Films, June 2012, Elsevier

    Dr Zenji Yatabe

  52. Contraction behaviors of Vorticella sp. stalk investigated using high-speed video camera. I: Nucleation and growth model

    Article • BIOPHYSICS, January 2012, Biophysical Society of Japan

    Dr Zenji Yatabe

  53. Contraction behaviors of Vorticella sp. stalk investigated using high-speed video camera. II: Viscosity effect of several types of polymer additives

    Article • BIOPHYSICS, January 2012, Biophysical Society of Japan

    Dr Zenji Yatabe

  54. Optical Absorption Properties of InP Porous Structures Formed by Electrochemical Process

    Article • January 2012, Japan Society of Applied Physics

    Dr Zenji Yatabe

  55. Image analysis of thickness in flowing soap films. I: effects of polymer

    Article • Experiments in Fluids, March 2010, Springer Science + Business Media

    Dr Zenji Yatabe

  56. 3P215 Complex Chemical Physics XXXVIII : The lamellar - vesicle transition of Multilamellar Vesicle in sine oscillatory shear flow(Cell biology,The 48th Annual Meeting of the Biophysical Society of Japan)

    Article • Seibutsu Butsuri, January 2010, Biophysical Society of Japan

    Dr Zenji Yatabe

  57. Size evolution of onion structure under oscillatory shear flow

    Article • Chemical Physics Letters, June 2009, Elsevier

    Dr Zenji Yatabe

  58. 2P-161 Study on Bio-Probe in Polymer Solutions(Cell biology,The 47th Annual Meeting of the Biophysical Society of Japan)

    Article • Seibutsu Butsuri, January 2009, Biophysical Society of Japan

    Dr Zenji Yatabe

  59. 3P-145 Contraction process of Vorticella stalk measured by high-speed camera(Cell bioiogy,The 47th Annual Meeting of the Biophysical Society of Japan)

    Article • Seibutsu Butsuri, January 2009, Biophysical Society of Japan

    Dr Zenji Yatabe

  60. 3P-147 Construction of game's relationship theory using five white-rot fungi(Cell bioiogy,The 47th Annual Meeting of the Biophysical Society of Japan)

    Article • Seibutsu Butsuri, January 2009, Biophysical Society of Japan

    Dr Zenji Yatabe

  61. Formation process of shear-induced onion structure made of quaternary system SDS/octanol/water/NaCl

    Article • Chemical Physics Letters, April 2008, Elsevier

    Dr Zenji Yatabe

  62. Fluorescence lifetime imaging microscopy for in situ observation of the nanocrystallization of rubrene in a microfluidic set-up

    Article • Chemical Physics Letters, September 2007, Elsevier

    Dr Zenji Yatabe