Effects of Cl2-Based Inductively Coupled Plasma Etching of AlGaN on Interface Properties of Al2O3/AlGaN/GaN Heterostructures

What is it about?

The effects of the inductively coupled plasma (ICP) etching of AlGaN on the interface properties of the Al2O3/AlGaN/GaN structures prepared by atomic layer deposition were investigated. It was found from the photoassisted capacitance-voltage (C-V) results that the ICP etching of the AlGaN surface significantly increased the interface state density up to 8 x 10(12) cm(-2) eV(-1) at the Al2O3/AlGaN interface. The transmission electron microscopy and X-ray photoelectron spectroscopy analyses indicated that the monolayer-level roughness, disorder of the chemical bonds at the AlGaN surface caused poor C-V characteristics due to high-density interface states at the Al2O3/ICP-etched AGaN interface.

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