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Why is it important?
Materials with coupled or competing magnetic and electrical properties are being widely explored for next-generation devices to take us beyond the silicon age of microelectronics. Understanding, and maybe even exploiting, the influence of strain and defects on these properties is essential if these new materials are to find applications in future technologies. Generating this understanding is at the core of this work.
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This page is a summary of: Coupling and competition between ferroelectricity, magnetism, strain, and oxygen vacancies in AMnO3 perovskites, MRS Communications, August 2016, Cambridge University Press,
DOI: 10.1557/mrc.2016.30.
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