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This page is a summary of: Atomistic Design of Guiding Principles for High Quality Metal–Oxide–Nitride–Oxide–Semiconductor Memories: First Principles Study of H and O Incorporation Effects for N Vacancies in SiN Charge Trap Layers, Japanese Journal of Applied Physics, April 2011, Japan Society of Applied Physics,
DOI: 10.1143/jjap.50.04dd05.
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