Using quantum dot lasers on silicon to generate sub picosecond optical pulses

What is it about?

Quantum dot mode locking is of interest compared to their quantum well counterparts when considering their inhomogeneously broadened gain spectrum, ultrafast carrier dynamics, superior temperature stability, low chirp and low level of amplified spontaneous emission (ASE) noise, which are quite beneficial for low noise and femtosecond pulse generation. We show how to generate short optical pulses using quantum dot lasers on silicon substrates.

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Why is it important?

Mode locked lasers usually require saturable absorbers for passive mode locking or gain modulation for active mode locking, but quantum dot lasers can spontaneously mode lock, generating sub picosecond optical pulses. We show how to do this using quantum dot material epitaxially grown on silicon substrates. This is a very simple structure grown on an inexpensive substrate that could result in low cost sources of very short optical pulses and enable integration with other optical and electrical devices on silicon

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