What is it about?
We present a simple theoretical model that predicts the thermal conductivity of SiO2 layers with embedded Ge quantum dots. We have found that the conductivity reduction can be predicted by the dot-induced local elastic perturbations in SiO2. Our model is able to explain not only this large reduction but also the magnitude and temperature variation of the thermal conductivity with size and density of the dots. Within the error range, the theoretical calculations of the temperature-dependent thermal conductivity in different samples are in close agreement with the experimental measurements.
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Why is it important?
The results may be used to enhance phonon scattering and thus reduce the thermal conductivity in composite systems.
Perspectives
It is implied that including the strain fields in Si- and Ge-based multilayer structures would be essential for engineering the heat pathways in on-chip thermoelectric devices and circuits.
Oleg Korotchenkov
Kyyivs'kij nacional'nij universytet imeni Tarasa Shevchenka
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This page is a summary of: A model for predicting the thermal conductivity of SiO2–Ge nanoparticle composites, Physical Chemistry Chemical Physics, January 2015, Royal Society of Chemistry,
DOI: 10.1039/c5cp00129c.
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