All Stories

  1. 1300°C Annealing of 1×1020 Al+ Ion Implanted 3C-SiC

    Article • Materials Science Forum, July 2019, Trans Tech Publications

    dr Roberta Nipoti, Dr Marcin Zielinski

  2. Activation Energy for the Post Implantation Annealing of 1019 cm-3 and 1020 cm-3 Ion Implanted Al in 4H SiC

    Article • Materials Science Forum, July 2019, Trans Tech Publications

    dr Roberta Nipoti, Sergio Sapienza, Giovanni Alfieri

  3. Carrier Transport Mechanisms in Ion Implanted and Highly-Doped p-Type 4H-SiC(Al)

    Article • Materials Science Forum, July 2019, Trans Tech Publications

    Prof. Antonella A. Parisini, dr Roberta Nipoti

  4. About the Electrical Activation of 1×1020 cm-3 Ion Implanted Al in 4H-SiC at Annealing Temperatures in the Range 1500 - 1950°C

    Article • Materials Science Forum, June 2018, Trans Tech Publications

    dr Roberta Nipoti, Giovanni Alfieri

  5. Ni-Al-Ti Ohmic Contacts with Preserved Form Factor and Few 10- 4 Ωcm2 Specific Resistance on 0.1-1 Ωcm p-Type 4H-SiC

    Article • Materials Science Forum, June 2018, Trans Tech Publications

    dr Roberta Nipoti

  6. 3C-SiС Hetero-Epitaxially Grown on Silicon Compliance Substrates and New 3C-SiС Substrates for Sustainable Wide-Band-Gap Power Devices (CHALLENGE)

    Article • Materials Science Forum, June 2018, Trans Tech Publications

    Francesco La Via, dr Roberta Nipoti, Dr Marcin Zielinski, Adolf Schöner, gregory grosset

  7. Kinetics Modeling of the Carbon Vacancy Thermal Equilibration in 4H-SiC

    Article • Materials Science Forum, June 2018, Trans Tech Publications

    dr Roberta Nipoti

  8. Double Step Annealing for the Recovering of Ion Implantation Defectiveness in 4H-SiC DIMOSFET

    Article • Materials Science Forum, June 2018, Trans Tech Publications

    dr Roberta Nipoti, Francesco La Via

  9. Formation of D-Center in p-Type 4H-SiC Epi-Layers during High Temperature Treatments

    Article • Materials Science Forum, May 2017, Trans Tech Publications

    dr Roberta Nipoti

  10. Point Defects Investigation of High Energy Proton Irradiated SiC p+-i-n Diodes

    Article • Materials Science Forum, May 2017, Trans Tech Publications

    dr Roberta Nipoti

  11. DLTS Study on Al+ Ion Implanted and 1950°C Annealed p-i-n 4H-SiC Vertical Diodes

    Article • Materials Science Forum, May 2017, Trans Tech Publications

    dr Roberta Nipoti

  12. Ni-Al-Ti Ohmic Contacts on Al Implanted 4H-SiC

    Article • Materials Science Forum, May 2017, Trans Tech Publications

    dr Roberta Nipoti, Giovanni Alfieri

  13. Al+ Ion Implanted 4H-SiC Vertical p+-i-n Diodes: Processing Dependence of Leakage Currents and OCVD Carrier Lifetimes

    Article • Materials Science Forum, May 2017, Trans Tech Publications

    dr Roberta Nipoti

  14. Forward Current of Al+ Implanted 4H-SiC Diodes: A Study on Periphery and Area Components

    Article • Materials Science Forum, May 2016, Trans Tech Publications

    dr Roberta Nipoti

  15. 1950°C Annealing of Al+ Implanted 4H-SiC: Sheet Resistance Dependence on the Annealing Time

    Article • Materials Science Forum, May 2016, Trans Tech Publications

    dr Roberta Nipoti, Prof. Antonella A. Parisini, Giovanni Alfieri

  16. High Temperature Variable Range Hopping in Heavy Al Implanted 4H-SiC

    Article • Materials Science Forum, May 2016, Trans Tech Publications

    dr Roberta Nipoti, Prof. Antonella A. Parisini

  17. Controlling the Carbon Vacancy Concentration in 4H-SiC Subjected to High Temperature Treatment

    Article • Materials Science Forum, May 2016, Trans Tech Publications

    dr Roberta Nipoti

  18. Formation and Annihilation of Carbon Vacancies in 4H-SiC

    Article • Materials Science Forum, May 2016, Trans Tech Publications

    dr Roberta Nipoti

  19. Isothermal Treatment Effects on the Carbon Vacancy in 4H Silicon Carbide

    Article • Materials Science Forum, June 2015, Trans Tech Publications

    dr Roberta Nipoti

  20. SiC Device Manufacturing: How Processing Impacts the Material and Device Properties

    Article • Materials Science Forum, June 2015, Trans Tech Publications

    dr Roberta Nipoti, Giovanni Alfieri

  21. Al+ Ion Implanted On-Axis <0001> Semi-Insulating 4H-SiC

    Article • Materials Science Forum, June 2015, Trans Tech Publications

    dr Roberta Nipoti, Prof. Antonella A. Parisini

  22. About the Hole Transport Analysis in Heavy Doped p-Type 4H-SiC(Al)

    Article • Materials Science Forum, June 2015, Trans Tech Publications

    dr Roberta Nipoti, Prof. Antonella A. Parisini

  23. Ion Implanted Lateral p+-i-n+ Diodes on HPSI 4H-SiC

    Article • Materials Science Forum, June 2015, Trans Tech Publications

    dr Roberta Nipoti

  24. Analytical Prediction of the Cross-Over Point in the Temperature Coefficient of the Forward Characteristics of 4H−SiC p+−i−n Diodes

    Article • Materials Science Forum, June 2015, Trans Tech Publications

    dr Roberta Nipoti, Dr. Luigi Di Benedetto, Gian Domenico Licciardo

  25. Hetero-Epitaxial Single Crystal 3C-SiC Opto-Mechanical Pressure Sensor

    Article • Materials Science Forum, June 2015, Trans Tech Publications

    dr Roberta Nipoti, Francesco La Via

  26. Microwave Annealing of Al+ Implanted 4H-SiC: Towards Device Fabrication

    Article • Materials Science Forum, February 2014, Trans Tech Publications

    dr Roberta Nipoti, Prof. Antonella A. Parisini

  27. Al+ Implanted 4H-SiC p+-i-n Diodes: Evidence for Post-Implantation-Annealing Dependent Defect Activation

    Article • Materials Science Forum, February 2014, Trans Tech Publications

    dr Roberta Nipoti

  28. Al+ Implanted 4H-SiC: Improved Electrical Activation and Ohmic Contacts

    Article • Materials Science Forum, January 2013, Trans Tech Publications

    dr Roberta Nipoti, Prof. Antonella A. Parisini

  29. Steady-State Analysis of a Normally-Off 4H-SiC Trench Bipolar-Mode FET

    Article • Materials Science Forum, January 2013, Trans Tech Publications

    dr Roberta Nipoti

  30. Simulation of the Temperature Dependence of Hall Carriers in Al Doped 4H-SiC

    Article • Materials Science Forum, May 2012, Trans Tech Publications

    dr Roberta Nipoti

  31. 2D Simulation of under-Mask Penetration in 4H-SiC Implanted with Al+ Ions

    Article • Materials Science Forum, March 2011, Trans Tech Publications

    dr Roberta Nipoti

  32. Improving Doping Efficiency of P+ Implanted Ions in 4H-SiC

    Article • Materials Science Forum, March 2011, Trans Tech Publications

    dr Roberta Nipoti

  33. Carbon-Cap for Ohmic Contacts on n-Type Ion Implanted 4H-SiC

    Article • Materials Science Forum, March 2011, Trans Tech Publications

    dr Roberta Nipoti

  34. Simulation of the Incomplete Ionization of the n-Type Dopant Phosphorus in 4H-SiC, Including Screening by Free Carriers

    Article • Materials Science Forum, March 2011, Trans Tech Publications

    dr Roberta Nipoti

  35. Numerical Simulations of a 4H-SiC BMFET Power Transistor with Normally-Off Characteristics

    Article • Materials Science Forum, March 2011, Trans Tech Publications

    dr Roberta Nipoti

  36. Ultra Fast High Temperature Microwave Annealing of Ion Implanted Large Bandgap Semiconductors

    Article • Materials Science Forum, April 2010, Trans Tech Publications

    dr Roberta Nipoti

  37. Improvement of Electron Channel Mobility in 4H SiC MOSFET by Using Nitrogen Implantation

    Article • Materials Science Forum, January 2009, Trans Tech Publications

    dr Roberta Nipoti

  38. Room Temperature Annealing Effects on Leakage Current of Ion Implanted p+n 4H-SiC Diodes

    Article • Materials Science Forum, January 2009, Trans Tech Publications

    dr Roberta Nipoti

  39. Effects of N Implantation before Gate Oxidation on the Performance of 4H-SiC MOSFET

    Article • Materials Science Forum, January 2009, Trans Tech Publications

    dr Roberta Nipoti

  40. Post-Implantation Annealing of SiC: Relevance of the Heating Rate

    Article • September 2007, CrossRef Test Account

    dr Roberta Nipoti

  41. Post-Implantation Annealing of SiC: Relevance of the Heating Rate

    Article • Materials Science Forum, January 2007, Trans Tech Publications

    dr Roberta Nipoti

  42. Characterization of MOS Capacitors Fabricated on n-type 4H-SiC Implanted with Nitrogen at High Dose

    Article • Materials Science Forum, January 2007, Trans Tech Publications

    dr Roberta Nipoti

  43. Fabrication of MOS Capacitors by Wet Oxidation of p-Type 4H-SiC Preamorphized by Nitrogen Ion Implantation

    Article • Materials Science Forum, January 2007, Trans Tech Publications

    dr Roberta Nipoti

  44. Effects of Very High Neutron Fluence Irradiation on p+n Junction 4H-SiC Diodes

    Article • Materials Science Forum, January 2007, Trans Tech Publications

    dr Roberta Nipoti

  45. Correlation between Current Transport and Defects in n+/p 6H-SiC Diodes

    Article • Materials Science Forum, January 2006, Trans Tech Publications

    dr Roberta Nipoti

  46. Current Analysis of Ion Implanted p+/n 4H-SiC Junctions: Post-Implantation Annealing in Ar Ambient

    Article • Materials Science Forum, January 2006, Trans Tech Publications

    dr Roberta Nipoti

  47. Post-Implantation Annealing in a Silane Ambient Using Hot-Wall CVD

    Article • Materials Science Forum, January 2006, Trans Tech Publications

    dr Roberta Nipoti

  48. Minimum Ionizing Particle Detector Based on p+n Junction SiC Diode

    Article • Materials Science Forum, January 2006, Trans Tech Publications

    dr Roberta Nipoti

  49. Competition between Oxidation and Recrystallization in Ion Amorphized (0001) 6H-SiC

    Article • Materials Science Forum, January 2005, Trans Tech Publications

    dr Roberta Nipoti

  50. Contact Resistivity and Barrier Height of Al/Ti Ohmic Contacts on p-Type Ion Implanted 4H- and 6H-SiC

    Article • Materials Science Forum, June 2004, Trans Tech Publications

    dr Roberta Nipoti

  51. SILICON CARBIDE PARTICLE DETECTORS: ANALYSIS AND SIMULATION

    Article • February 2004, World Scientific Pub Co Pte Lt

    dr Roberta Nipoti

  52. Structural Characterization of Alloyed Al/Ti and Ti Contacts on SiC

    Article • Materials Science Forum, January 2004, Trans Tech Publications

    dr Roberta Nipoti

  53. Extraction of the Schottky Barrier Height for Ti/Al Contacts on 4H-SiC from I-V and C-V Measurements

    Article • Materials Science Forum, January 2004, Trans Tech Publications

    dr Roberta Nipoti

  54. A Highly Effective Edge Termination Design for SiC Planar High Power Devices

    Article • Materials Science Forum, January 2004, Trans Tech Publications

    dr Roberta Nipoti, Dr. Narcís Mestres

  55. Characterization of a Thermal Oxidation Process on SiC Preamorphized by Ar Ion Implantation

    Article • Materials Science Forum, January 2004, Trans Tech Publications

    dr Roberta Nipoti

  56. He+ ion damage in 4H-SiC studied by charge collection efficiency measurements.

    Article • MRS Proceedings, January 2003, Cambridge University Press

    dr Roberta Nipoti

  57. Electrical Characterization of Ion-Implanted n+/p 6H-SiC Diodes

    Article • Materials Science Forum, January 2003, Trans Tech Publications

    dr Roberta Nipoti

  58. Al/Ti Ohmic Contacts to p-Type Ion-Implanted 6H-SiC: Mono- and Two- Dimensional Analysis of TLM Data

    Article • Materials Science Forum, January 2003, Trans Tech Publications

    dr Roberta Nipoti

  59. Low-Temperature Thermal Oxidation of Ion-Amorphized 6H-SiC

    Article • Materials Science Forum, January 2002, Trans Tech Publications

    dr Roberta Nipoti

  60. channeling stopping power of MeV He+ ions in 4H- and 6H-SiC.

    Article • MRS Proceedings, January 2002, Cambridge University Press

    dr Roberta Nipoti

  61. Comparison between Chemical and Electrical Profiles in Al+ or N+ Implanted and Annealed 6H-SiC

    Article • Materials Science Forum, January 2002, Trans Tech Publications

    dr Roberta Nipoti

  62. Highly-Doped Implanted pn Junction for SiC Zener Diode Fabrication

    Article • Materials Science Forum, January 2002, Trans Tech Publications

    dr Roberta Nipoti, Dr. Narcís Mestres

  63. 4H- and 6H-SiC Rutherford Back Scattering-Channeling Spectrometry: Polytype Finger Printing

    Article • Materials Science Forum, January 2001, Trans Tech Publications

    dr Roberta Nipoti