All Stories

  1. Defect energy levels in carbon implanted n-type homoepitaxial GaN

    Article • Journal of Applied Physics, September 2019, American Institute of Physics

    Giovanni Alfieri

  2. Evidence for carbon clusters present near thermal gate oxides affecting the electronic band structure in SiC-MOSFET

    Article • Frontiers in Human Neuroscience, September 2019, American Institute of Physics

    Giovanni Alfieri

  3. Activation Energy for the Post Implantation Annealing of 1019 cm-3 and 1020 cm-3 Ion Implanted Al in 4H SiC

    Article • Materials Science Forum, July 2019, Trans Tech Publications

    dr Roberta Nipoti, Sergio Sapienza, Giovanni Alfieri

  4. Electrically Active Levels Generated by Long Oxidation Times in 4H-SiC

    Article • Materials Science Forum, July 2019, Trans Tech Publications

    Giovanni Alfieri

  5. Improved SiO2/ 4H-SiC Interface Defect Density Using Forming Gas Annealing

    Article • Materials Science Forum, July 2019, Trans Tech Publications

    Giovanni Alfieri

  6. Microstructural Analysis of Ti/Ni Bilayer Ohmic Contacts on 4H-SiC Layers

    Article • Materials Science Forum, July 2019, Trans Tech Publications

    Giovanni Alfieri

  7. An Investigation into the Dynamic Behavior of 3.3kV MOSFETs Body Diode

    Article • Materials Science Forum, July 2019, Trans Tech Publications

    Giovanni Alfieri

  8. Electrically active deep levels formed by thermal oxidation of n-type 4H-SiC

    Article • Journal of Applied Physics, May 2019, American Institute of Physics

    Giovanni Alfieri

  9. Generation and metastability of deep level states in β-Ga2O3 exposed to reverse bias at elevated temperatures

    Article • Journal of Applied Physics, May 2019, American Institute of Physics

    Giovanni Alfieri

  10. Impact of proton irradiation on conductivity and deep level defects in β-Ga2O3

    Article • APL Materials, February 2019, American Institute of Physics

    Giovanni Alfieri

  11. The Effects of Illumination on Point Defects Detected in High Purity Semi-Insulating 4H-SiC

    Article • Materials Science Forum, June 2018, Trans Tech Publications

    Giovanni Alfieri

  12. Performance Evaluation of SiC JBS Diodes Rated for 6.5kV Applications

    Article • Materials Science Forum, June 2018, Trans Tech Publications

    Giovanni Alfieri

  13. Formation of Ohmic Contacts to n-Type 4H-SiC at Low Annealing Temperatures

    Article • Materials Science Forum, June 2018, Trans Tech Publications

    Giovanni Alfieri

  14. About the Electrical Activation of 1×1020 cm-3 Ion Implanted Al in 4H-SiC at Annealing Temperatures in the Range 1500 - 1950°C

    Article • Materials Science Forum, June 2018, Trans Tech Publications

    dr Roberta Nipoti, Giovanni Alfieri

  15. Bulk β-Ga2O3 with (010) and (201) Surface Orientation: Schottky Contacts and Point Defects

    Article • Materials Science Forum, May 2017, Trans Tech Publications

    Giovanni Alfieri

  16. Ni-Al-Ti Ohmic Contacts on Al Implanted 4H-SiC

    Article • Materials Science Forum, May 2017, Trans Tech Publications

    dr Roberta Nipoti, Giovanni Alfieri

  17. 1950°C Annealing of Al+ Implanted 4H-SiC: Sheet Resistance Dependence on the Annealing Time

    Article • Materials Science Forum, May 2016, Trans Tech Publications

    dr Roberta Nipoti, Prof. Antonella A. Parisini, Giovanni Alfieri

  18. High Channel Mobility 4H-SiC MOSFETs by As and P Implantation Prior to Thermal Oxidation in N2O Atmosphere

    Article • Materials Science Forum, May 2016, Trans Tech Publications

    Adolf Schöner, Giovanni Alfieri

  19. Deep Level Characterization of 5 MeV Proton Irradiated SiC PiN Diodes

    Article • Materials Science Forum, May 2016, Trans Tech Publications

    Pavel Hazdra, Giovanni Alfieri

  20. SiC Device Manufacturing: How Processing Impacts the Material and Device Properties

    Article • Materials Science Forum, June 2015, Trans Tech Publications

    dr Roberta Nipoti, Giovanni Alfieri

  21. Passivation of 4H-SiC/SiO2 Interface Traps by Oxidation of a Thin Silicon Nitride Layer

    Article • Materials Science Forum, June 2015, Trans Tech Publications

    Adolf Schöner, Giovanni Alfieri