All Stories

  1. Defect energy levels in carbon implanted n-type homoepitaxial GaN
  2. Evidence for carbon clusters present near thermal gate oxides affecting the electronic band structure in SiC-MOSFET
  3. Activation Energy for the Post Implantation Annealing of 1019 cm-3 and 1020 cm-3 Ion Implanted Al in 4H SiC
  4. Electrically Active Levels Generated by Long Oxidation Times in 4H-SiC
  5. Improved SiO2/ 4H-SiC Interface Defect Density Using Forming Gas Annealing
  6. Microstructural Analysis of Ti/Ni Bilayer Ohmic Contacts on 4H-SiC Layers
  7. An Investigation into the Dynamic Behavior of 3.3kV MOSFETs Body Diode
  8. Electrically active deep levels formed by thermal oxidation of n-type 4H-SiC
  9. Generation and metastability of deep level states in β-Ga2O3 exposed to reverse bias at elevated temperatures
  10. Impact of proton irradiation on conductivity and deep level defects in β-Ga2O3
  11. The Effects of Illumination on Point Defects Detected in High Purity Semi-Insulating 4H-SiC
  12. Performance Evaluation of SiC JBS Diodes Rated for 6.5kV Applications
  13. Formation of Ohmic Contacts to n-Type 4H-SiC at Low Annealing Temperatures
  14. About the Electrical Activation of 1×1020 cm-3 Ion Implanted Al in 4H-SiC at Annealing Temperatures in the Range 1500 - 1950°C
  15. Bulk β-Ga2O3 with (010) and (201) Surface Orientation: Schottky Contacts and Point Defects
  16. Ni-Al-Ti Ohmic Contacts on Al Implanted 4H-SiC
  17. 1950°C Annealing of Al+ Implanted 4H-SiC: Sheet Resistance Dependence on the Annealing Time
  18. High Channel Mobility 4H-SiC MOSFETs by As and P Implantation Prior to Thermal Oxidation in N2O Atmosphere
  19. Deep Level Characterization of 5 MeV Proton Irradiated SiC PiN Diodes
  20. SiC Device Manufacturing: How Processing Impacts the Material and Device Properties
  21. Passivation of 4H-SiC/SiO2 Interface Traps by Oxidation of a Thin Silicon Nitride Layer