All Stories

  1. Fabrication and Characterization of Ohmic Contacts to 3C-SiC Layers Grown on Silicon
  2. Vapor Growth of 3C-SiC Using the Transition Layer of 3C-SiC on Si CVD Templates
  3. High Resolution Investigation of Stacking Fault Density by HRXRD and STEM
  4. Thermal Annealing of High Dose P Implantation in 4H-SiC
  5. High Quality 4H-SiC Epitaxial Layer by Tuning CVD Process
  6. Electrical Properties of Thermal Oxide on 3C-SiC Layers Grown on Silicon
  7. Electrical Characterisation of Thick 3C-SiC Layers Grown on Off-Axis 4H-SiC Substrates
  8. Growth of 4H-SiC Epitaxial Layer through Optimization of Buffer Layer
  9. Stress Relaxation Mechanism after Thinning Process on 4H-SiC Substrate
  10. Stacking Faults Defects on 3C-SiC Homo-Epitaxial Films
  11. 3C-SiС Hetero-Epitaxially Grown on Silicon Compliance Substrates and New 3C-SiС Substrates for Sustainable Wide-Band-Gap Power Devices (CHALLENGE)
  12. Double Step Annealing for the Recovering of Ion Implantation Defectiveness in 4H-SiC DIMOSFET
  13. 4H-SiC Defects Evolution by Thermal Processes
  14. Detection of Crystallographic Defects in 3C-SiC by Micro-Raman and Micro-PL Analysis
  15. 3C-SiC Bulk Sublimation Growth on CVD Hetero-Epitaxial Seeding Layers
  16. Hydrogen Flux Influence on Homo-Epitaxial 4H-SiC Doping Concentration Profile for High Power Application
  17. Voids-Free 3C-SiC/Si Interface for High Quality Epitaxial Layer
  18. Electrical Properties of Defects in 4H-SiC Investigated by Photo-Induced-Currents Measurements
  19. Physical Vapor Growth of Double Position Boundary Free, Quasi-Bulk 3C-SiC on High Quality 3C-SiC on Si CVD Templates
  20. Stacking Fault Analysis of Epitaxial 3C-SiC on Si(001) Ridges
  21. 3C-SiC Epitaxy on Deeply Patterned Si(111) Substrates
  22. Ion Implantation Defects in 4H-SiC DIMOSFET
  23. Advanced Silicon Carbide Devices and Processing
  24. Epitaxial Growth on 150 mm 2° off Wafers
  25. 3C-SiC Polycrystalline Films on Si for Photovoltaic Applications
  26. Defect Reduction in Epitaxial 3C-SiC on Si(001) and Si(111) by Deep Substrate Patterning
  27. Monte Carlo Study of the early Growth Stages of 3C-SiC on Misoriented <11-20> and <1-100> 6H-SiC Substrates: Role of Step-Island Interaction
  28. Correlations between Crystal Quality and Electrical Properties by Means of Simultaneous Photoluminescence and Photocurrent Analysis
  29. 4H-SiC Defects Analysis by Micro Raman Spectroscopy
  30. Electrical Properties Evaluation on High Quality Hetero-Epitaxial 3C-SiC(001) for MOSFET Applications
  31. Hetero-Epitaxial Single Crystal 3C-SiC Opto-Mechanical Pressure Sensor
  32. Strain Evaluation and Fracture Properties of Hetero-Epitaxial Single Crystal 3C-SiC Squared Membrane
  33. Analysis on 3C-SiC Layer Grown on Pseudomorphic-Si/Si1-xGex/Si(001) Heterostructures
  34. Micro-Raman Characterization of 4H-SiC Stacking Faults
  35. Structural Characterization of Heteroepitaxial 3C-SiC
  36. (Invited) High Quality 3C-SiC for MOS Applications
  37. High Power Density UV Optical Stress for Quality Evaluation of 4H-SiC Epitaxial Layers
  38. Single Shockley Faults Enlargement during Micro-Photoluminescence Defects Mapping
  39. Single Shockley Faults Evolution Under UV Optical Pumping
  40. Comparison between Different Schottky Diode Edge Termination Structures: Simulations and Experimental Results
  41. Investigation on C54 nucleation and growth by micro-Raman imaging