All Stories

  1. Electromigration-driven weak resistance switching in high-temperature superconducting devices
  2. Tuning of Antiferromagnetic Phase in La1–xSrxMnO3 Epitaxial Thin Films by Polymer-Assisted Deposition Synthesis
  3. Impact of Twin's Landscape on the Magnetic Damping of La2/3Sr1/3MnO3 Thin Films
  4. Spin-to-Charge Conversion in All-Oxide La2/3Sr1/3MnO3/SrIrO3 Heterostructures
  5. Tunable Perpendicular Magnetoresistive Sensor Driven by Shape and Substrate Induced Magnetic Anisotropy
  6. From Electric Doping Control to Thermal Defect Nucleation in Perovskites
  7. Influence of growth temperature on the pinning landscape of YBa2Cu3O7− δ films grown from Ba-deficient solutions
  8. Electrically‐Driven Oxygen Vacancy Aggregation and Displacement in YBa 2 Cu 3 O 7−δ Films
  9. Interplay of Multiple Sediment Routing Systems Revealed by Combined Sandstone Petrography and Heavy Mineral Analysis (HMA) in the South Pyrenean Foreland Basin
  10. Spin to charge conversion in chemically deposited epitaxial La0.9MnO3 thin films capped with Pt
  11. Luminescent and Magnetic Tb-MOF Flakes Deposited on Silicon
  12. Low-Fluorine Ba-Deficient Solutions for High-Performance Superconducting YBCO Films
  13. Crystal engineering and ferroelectricity at the nanoscale in epitaxial 1D manganese oxide on silicon
  14. Heavy-mineral provenance signatures during the infill and uplift of a foreland basin: An example from the Jaca basin (southern Pyrenees, Spain)
  15. Rapid Thermal Annealing of Double Perovskite Thin Films Formed by Polymer Assisted Deposition
  16. Direct Visualization of Current-Stimulated Oxygen Migration in YBa2Cu3O7−δ Thin Films
  17. Spectroscopic study of partially oxidized BN nanoscrolls induced by low frequency ultrasonic irradiation
  18. Aqueous Chemical Solution Deposition of Functional Double Perovskite Epitaxial Thin Films
  19. Multi-Terminal Transistor-Like Devices Based on Strongly Correlated Metallic Oxides for Neuromorphic Applications
  20. Spontaneous cationic ordering in chemical-solution-grown La2CoMnO6 double perovskite thin films
  21. Electromigration in the dissipative state of high-temperature superconducting bridges
  22. Dynamic magnetic properties and spin pumping in polymer-assisted-deposited La0.92MnO3 thin films
  23. Spontaneous in-flight assembly of magnetic nanoparticles into macroscopic chains
  24. 2D organic molecular metallic soft material derived from BEDO-TTF with electrochromic and rectifying properties
  25. Electrochemical Tuning of Metal Insulator Transition and Nonvolatile Resistive Switching in Superconducting Films
  26. Improved 4H-SiC N-MOSFET Interface Passivation by Combining N2O Oxidation with Boron Diffusion
  27. Petrographic and geochemical evidence for multiphase formation of carbonates in the Martian orthopyroxenite Allan Hills 84001
  28. E-MRS spring meeting 2016 symposium AA: solution processing and properties of functional oxide thin films and nanostructures II
  29. Chelyabinsk Meteorite as a Proxy for Studying the Properties of Potentially Hazardous Asteroids and Impact Deflection Strategies
  30. One-Step Route to Iron Oxide Hollow Nanocuboids by Cluster Condensation: Implementation in Water Remediation Technology
  31. Formation of Self-Organized Mn3O4 Nanoinclusions in LaMnO3 Films
  32. Multiwavelength excitation Raman scattering analysis of bulk and two-dimensional MoS 2 : vibrational properties of atomically thin MoS 2 layers
  33. Integration of functional complex oxide nanomaterials on silicon
  34. Tuning the Terrace and Step Stability of 6H-SiC (0001) for Graphene Film Deposition
  35. The European Materials Research Society (EMRS) Spring Meeting 2014 Symposium I
  36. Chemical solution growth of La0.7Sr0.3MnO3 nanotubes in confined geometries
  37. Fabrication of highly regular suspended graphene nanoribbons through a one-step electron beam lithography process
  38. The Ardón L6 ordinary chondrite: A long‐hidden Spanish meteorite fall
  39. Ampacity and electrical properties of thermally treated ultrathin carbon membranes grown by focused ion beam induced deposition of phenanthrane
  40. Magnetic vortex evolution in self-assembled La0.7Sr0.3MnO3 nanoislands under in-plane magnetic field
  41. Thickness–concentration–viscosity relationships in spin-coated metalorganic ceria films containing polyvinylpyrrolidone
  42. Electronic and Magnetic Structure of LaSr-2×4 Manganese Oxide Molecular Sieve Nanowires
  43. Enabling electromechanical transduction in silicon nanowire mechanical resonators fabricated by focused ion beam implantation
  44. Formation of Graphene onto Atomically Flat 6H-SiC
  45. Focused ion beam as a tool for graphene technology: Structural study of processing sequence by electron microscopy
  46. Ferromagnetic 1D oxide nanostructures grown from chemical solutions in confined geometries
  47. Chemical solution route to self-assembled epitaxial oxide nanostructures
  48. Direct Monolithic Integration of Vertical Single Crystalline Octahedral Molecular Sieve Nanowires on Silicon
  49. Functional oxide nanostructures written by EBL on insulating single crystal substrates
  50. Thermal Analysis for Low Temperature Synthesis of Oxide Thin Films from Chemical Solutions
  51. Photoemission electron microscopy study of sub-200 nm self-assembled La0.7Sr0.3MnO3 epitaxial islands
  52. Dual Function Polyvinyl Alcohol Based Oxide Precursors for Nanoimprinting and Electron Beam Lithography
  53. Nucleation and mesostrain influence on percolating critical currents of solution derived YBa2Cu3O7 superconducting thin films
  54. Synthesis of patterned nanographene on insulators from focused ion beam induced deposition of carbon
  55. Interface structure governed by plastic and structural dissimilarity in perovskite La0.7Sr0.3MnO3 nanodots on rock-salt MgO substrates
  56. Nanoscale magnetic structure and properties of solution-derived self-assembled La0.7Sr0.3MnO3 islands
  57. Chemical synthesis of oriented ferromagnetic LaSr-2 × 4 manganese oxide molecular sieve nanowires
  58. Applicability and Results of Maastricht Type 2 Donation After Cardiac Death Liver Transplantation
  59. Nanobaguettes Single Epitaxial Graphene Layers on SiC(11-20)
  60. Characterisation of HfO<sub>2</sub>/Si/SiC MOS Capacitors
  61. Single Crystalline La0.7Sr0.3MnO3Molecular Sieve Nanowires with High Temperature Ferromagnetism
  62. High temperature transformation of electrospun BaZrO3 nanotubes into nanoparticle chains
  63. 3C-SiC films on insulated substrates for high-temperature electrostatic-based resonators
  64. Current status of self-organized epitaxial graphene ribbons on the C face of 6H–SiC substrates
  65. Growth of monolayer graphene on 8° off-axis 4H–SiC (000–1) substrates with application to quantum transport devices
  66. Location of hot spots in integrated circuits by monitoring the substrate thermal-phase lag with the mirage effect
  67. Integration of HfO2 on Si/SiC heterojunctions for the gate architecture of SiC power devices
  68. Differences between Graphene Grown on Si-Face and C-Face
  69. SiC on SOI Resonators: A Route for Electrically Driven MEMS in Harsh Environment
  70. Vertical (La,Sr)MnO3 Nanorods from Track‐Etched Polymers Directly Buffering Substrates
  71. Analysis of Excess Carrier Concentration Control in Fast-Recovery High Power Bipolar Diodes at Low Current Densities
  72. Deposited Thin SiO[sub 2] for Gate Oxide on n-Type and p-Type GaN
  73. Interfacial properties of AlN and oxidized AlN on Si
  74. Orientational ordering of solution derived epitaxial Gd-doped ceria nanowires induced by nanoscratching
  75. Anisotropic growth of long isolated graphene ribbons on the C face of graphite-capped6H-SiC
  76. Effects of cap layer on ohmic Ti/Al contacts to Si+ implanted GaN
  77. Rich Phase Behavior in a Supramolecular Conducting Material Derived from an Organogelator
  78. Growth of Few Graphene Layers on 6H, 4H and 3C-SiC Substrates
  79. Highly sensitive strained AlN on Si(111) resonators
  80. Ohmic Contacts to implanted GaN
  81. Fabrication of complementary metal-oxide-semiconductor integrated nanomechanical devices by ion beam patterning
  82. Nanostructuring of epitaxial graphene layers on SiC by means of field-induced atomic force microscopy modification
  83. Early stage formation of graphene on the C face of 6H-SiC
  84. Laser beam deflection-based perimeter scanning of integrated circuits for local overheating location
  85. Hot-Spot Detection in Integrated Circuits by Substrate Heat-Flux Sensing
  86. Single‐Crystalline La0.7Sr0.3MnO3 Nanowires by Polymer‐Template‐Directed Chemical Solution Synthesis
  87. Selective epitaxial growth of graphene on SiC
  88. Steady-state sinusoidal thermal characterization at chip level by internal infrared-laser deflection
  89. Fabrication of monocrystalline 3C–SiC resonators for MHz frequency sensors applications
  90. CVD oriented growth of carbon nanotubes using AlPO4-5 and L type zeolites
  91. SiC MOSFETs with thermally oxidized Ta2Si stacked on SiO2 as high-k gate insulator
  92. Fabrication and Test of 3C-SiC Electrostatic Resonators
  93. SiC MOSFET Channel Mobility Dependence on Substrate Doping and Temperature Considering High Density of Interface Traps
  94. SiC MOSFET Channel Mobility Dependence on Substrate Doping and Temperature Considering High Density of Interface Traps
  95. Depth-Resolved Temperature Measurements on Power Devices under Transient Conditions
  96. Strong isotropic flux pinning in solution-derived YBa2Cu3O7−x nanocomposite superconductor films
  97. Fabrication and Test of 3C-SiC Electrostatic Resonators
  98. Local growth of carbon nanotubes by thermal chemical vapor deposition from iron based precursor nanoparticles
  99. Characterisation of YBa2Cu3O6+x films grown by the trifluoro-acetate metal organic decomposition route by infrared spectroscopy
  100. Precursor Evolution and Nucleation Mechanism of YBa2Cu3Ox Films by TFA Metal−Organic Decomposition
  101. Ta 2 Si short time thermal oxidized layers in N 2 O and O 2 to form high- k gate dielectric on SiC
  102. Smooth Stress Relief of Trifluoroacetate Metal-Organic Solutions for YBa2Cu3O7 Film Growth
  103. Impact of Annealing Temperature Ramps on the Electrical Activation of N<sup>+</sup> and P<sup>+</sup> Co-Implanted SiC Layers
  104. Modelling of the Anomalous Field-Effect Mobility Peak of O-Ta<sub>2</sub>Si/4H-SiC High-k MOSFETs Measured in Strong Inversion
  105. PECVD Deposited TEOS for Field-Effect Mobility Improvement in 4H-SiC MOSFETs on the (0001) and (11-20) Faces
  106. Electrosynthesis of the poly(N-vinyl carbazole)/carbon nanotubes composite for applications in the supercapacitors field
  107. Transmission Fabry–Pèrot interference thermometry for thermal characterization of microelectronic devices
  108. Interface control in all metalorganic deposited coated conductors: Influence on critical currents
  109. A study of the influence of the annealing processes and interfaces with deposited SiO2 from tetra-ethoxy-silane for reducing the thermal budget in the gate definition of 4H–SiC devices
  110. Nucleation Mechanism OF YBa 2 Cu 3 O 7 by CSD using TFA Precursors
  111. All-chemical high-Jc YBa2Cu3O7 multilayers with SrTiO3 as cap layer
  112. Analysis of 1.2 kV JBS rectifiers fabricated in 4H-SiC
  113. A field-effect electron mobility model for SiC MOSFETs including high density of traps at the interface
  114. Progress towards all-chemical superconducting YBa 2 Cu 3 O 7 -coated conductors
  115. Field-effect mobility temperature modeling of 4H-SiC metal-oxide-semiconductor transistors
  116. Combined synchrotron x-ray diffraction and micro-Raman for following in situ the growth of solution-deposited YBa2Cu3O7 thin films
  117. Planar Edge Termination Design and Technology Considerations for 1.7-kV 4H-SiC PiN Diodes
  118. Thermal calibration procedure for internal infrared laser deflection apparatus
  119. The influence of growth conditions on the microstructure and critical currents of TFA-MOD YBa 2 Cu 3 O 7 films
  120. High<tex>$rm J_rm c$</tex>YBCO Thin Films and Multilayers Grown by Chemical Solution Deposition
  121. 4H-SiC MOS Structures Fabricated from RTCVD Si Layers Oxidized in Diluted N<sub>2</sub>O
  122. 4H-SiC MOSFETs Using Thermal Oxidized Ta<sub>2</sub>Si Films as High-k Gate Dielectric
  123. Epitaxial SiC Formation at the SiO<sub>2</sub>/Si Interface by C<sup>+</sup> Implantation into SiO<sub>2</sub> and Subsequent Annealing
  124. Homogeneity of Nitrogen and Phosphorus Co-Implants in 4H-SiC: Full Wafer Scale Investigation
  125. Temperature Dependence of 4H-SiC JBS and Schottky Diodes after High Temperature Treatment of Contact Metal
  126. Composite structure of wood cells in petrified wood
  127. Barrier inhomogeneities and electrical characteristics of Ni/Ti bilayer Schottky contacts on 4H-SiC after high temperature treatments
  128. Full wafer size investigation of N+and P+co-implanted layers in 4H-SiC
  129. Ni/Ti ohmic and Schottky contacts on 4H-SiC formed with a single thermal treatment
  130. Development of an analog processing circuit for IR-radiation power and noncontact position measurements
  131. Characterization of High-k Ta[sub 2]Si Oxidized Films on 4H-SiC and Si Substrates as Gate Insulator
  132. Experimental determination of lifetime engineering effects on free-carrier concentration
  133. Growth Mechanism and Opmization of MOD CeO2 Buffer Layers for TFA YBa2Cu3O7/CeO2 Multilayers
  134. Interface Control in All MOD Coated Conductors: Influence on Critical Currents
  135. Self-heating experimental study of 600V PT-IGBTs under low dissipation energies
  136. Biaxial texture analysis ofYBa2
  137. Chemical solution growth of superconductors: a new path towards high critical current coated conductors
  138. Chemical solution deposition: a path towards low cost coated conductors
  139. Flash Lamp Supported Deposition of 3C-SiC (FLASiC) – a Promising Technique to Produce High Quality Cubic SiC Layers
  140. Room Temperature Implantation and Activation Kinetics of Nitrogen and Phosphorus in 4H-SiC Crystals
  141. SiC Base Micro-Probe for Myocardial Ischemia Monitoring
  142. Visible Light Laser Irradiation: a Tool for Implantation Damage Reduction
  143. Internal infrared laser deflection system: a tool for power device characterization
  144. Chemical solution techniques for epitaxial growth of oxide buffer and YBa2Cu3O7 films
  145. A Highly Effective Edge Termination Design for SiC Planar High Power Devices
  146. 4H-SiC MIS structures using oxidized Ta2Si as high-k dielectric
  147. Sic Power Diodes Improvement by Fine Surface Polishing
  148. Ta[sub 2]Si Thermal Oxidation: A Simple Route to a High-k Gate Dielectric on 4H-SiC
  149. Theoretical and experimental investigations of single- and multilayer structures with SiGe nanoislands
  150. Aging of Sr2FeMoO6 and related oxides
  151. Influence of porosity on the critical currents of trifluoroacetate-MOD YBa/sub 2/Cu/sub 3/O/sub 7/ films
  152. Optimisation of junction termination extension for the development of a 2000 V planar 4H?SiC diode
  153. Comparative evaluation of implantation damage produced by N and P ions in 6H‐SiC
  154. High quality YBa 2 Cu 3 O 7 thin films grown by trifluoroacetates metalorganic deposition
  155. Epitaxial nucleation and growth of buffer layers and Y123 coated conductors deposited by metal-organic decomposition
  156. Infrared Investigation of Implantation Damage in 6H-SiC
  157. Strain-driven alloying: effect on sizes, shape and photoluminescence of GeSi/Si(001) self-assembled islands
  158. Optical investigation of CdSe/ZnSe quantum nanostructures
  159. Microscopic and optical investigation of Ge nanoislands on silicon substrates
  160. Highly-Doped Implanted pn Junction for SiC Zener Diode Fabrication
  161. Structural and Superconducting Properties of Hg0.75Re0.25Ba2−xSrxCa2Cu3O8+δ Superconductors Grown by Sol–Gel and Sealed Quartz Tube Synthesis
  162. Comment on “First-principles theory of the evolution of vibrational properties with long-range order inGaInP...
  163. An improved technology of 6H-SiC power diodes
  164. Low-doped 6H-SiC n-type epilayers grown by sublimation epitaxy
  165. Micro-Raman study of high pressure induced graphite-diamond phase-structural transformation: The role of a nitrogen containing precursor
  166. Effects of re-doping on superconducting properties and formation of Hg-1223 superconductors
  167. Synthesis and characterization of c-BN films prepared by ion beam assisted deposition and triode sputtering
  168. CuPt Ordering Fingerprints of Optical Phonons in Ternary III-V Compound Semiconductors
  169. Structure investigation of BN films grown by ion-beam-assisted deposition by means of polarised IR and Raman spectroscopy
  170. Lateral spread of implanted ion distributions in 6HSiC: simulation
  171. Confocal micro-Raman scattering and Rutherford backscattering characterization of lattice damage in aluminum implanted 6H–SiC
  172. Infrared and Raman analysis of plasma CVD boron nitride thin films
  173. Confocal micro-Raman characterization of lattice damage in high energy aluminum implanted 6H-SiC
  174. Compositional characterization of a-SiC:H films by infra-red spectroscopy
  175. Optical study of boron nitride thin films prepared by plasma-enhanced chemical vapor deposition
  176. Edge-on micro-Raman assessment of trigonal modes in partially ordered GaInP2
  177. Raman scattering in single-variant spontaneously orderedGaInP2
  178. Phonon Raman scattering in quantum wires
  179. Electron localization in the disordered conductors TiNiSn and HfNiSn observed by Raman and infrared spectroscopies
  180. Magneto-optical properties of biaxially strained quantum wells
  181. Magneto-photoluminescence excitation spectroscopy in a centre Si delta -doped GaAs/Al0.33Ga0.67As double heterostructure
  182. Growth and characterization of Al1−yInyAs/Ga1−xInxAs strained multiple quantum wells
  183. Free to bound exciton relaxation in [001] and [111] GaAs/GaAlAs quantum wells
  184. Localization induced transformation of the lattice modes of MNiSn (M=Zr, Hf, Ti) compounds.
  185. Photoluminescence study of implantation-induced intermixing of In0.53Ga0.47As/InP single quantum wells by argon ions
  186. Optical control of the two-dimensional electron-gas density in modulation-doped quantum wells studied by magnetophotoluminescence
  187. Valence-band-shape modification due to band coupling in strained quantum wells
  188. ANOMALOUS LATTICE PROPERTIES OF ZrNiSn CAUSED BY ELECTRON LOCALIZATION
  189. Excitonic spectrum of [111] GaAs/Gax
  190. Nonequilibrium luminescence at theE0+Δ0gap in GaAs with Si‐δ doping
  191. Photoluminescence and Raman analysis of strain and composition in InGaAs/AlGaAs pseudomorphic heterostructures
  192. Magneto-optics of narrow GaAs/Alx
  193. Magneto-optical properties of quantum wells under biaxial tensile strain
  194. Resonance Raman scattering of In Al1−As lattice matched to InP
  195. Growth and characterization of GaAs/Al/GaAs heterostructures
  196. Charge-density domains in photoexcited quantum-well structures
  197. Epitaxial growth and characterization of GaAs/Al/GaAs heterostructures
  198. Intrawell and interwell coupling of plasmons in multilayer modulation-doped GaAs/Al
  199. Resonant Raman scattering by plasmons and LO phonons near theE1
  200. PLASMONS AND SINGLE PARTICLE EXCITATIONS IN MODULATION DOPED QUANTUM WELLS
  201. Determination of single-particle relaxation time from light scattering spectra in modulation-doped quantum wells
  202. Spin relaxation of holes in the split-hole band of InP and GaSb
  203. Coupled Plasmons and Single Particle Excitations in the Two-Dimensional Electron Gas
  204. Raman Scattering by Coupled-Layer Plasmons and In-Plane Two-Dimensional Single-Particle Excitations in Multi-Quantum-Well Structures
  205. Resonant Raman Scattering by Spin-Density Fluctuations inn-Type Germanium
  206. Light emission at the E1 and E1+Δ1 gaps in heavily doped p-type Ge and GaAs
  207. Resonant Raman Scattering by Spin-Density Fluctuations inn-type Germanium
  208. Light Scattering by Plasmons in Heavily Doped n-Type Ge and Si
  209. Light scattering by plasmons in germanium
  210. Hydrostatic-pressure dependence of bound excitons in GaP
  211. Resonant Raman scattering by plasmons in n-type Ge
  212. A study of the influence of N/sub 2/O and N/sub 2/ annealing processes on 4H-SiC MOS structures with deposited TEOS SiO/sub 2/ as gate oxide
  213. A study of the thermal oxidation of TaSi/sub 2/ and Ta/sub 2/Si silicides to form dielectric layers for mis structures on 4H-SiC
  214. Fabrication of electrostatic resonators with monocristaline 3C SiC grown on silicon