All Stories

  1. A 4H-SiC UV Phototransistor With Excellent Optical Gain Based on Controlled Potential Barrier
  2. A Bit-Line Voltage Sensing Circuit With Fused Offset Compensation and Cancellation Scheme
  3. Performance of 4H-SiC Bipolar Diodes as Temperature Sensor at Low Temperatures
  4. First Experimental Test on Bipolar Mode Field Effect Transistor Prototype in 4H-SiC: A Proof of Concept
  5. Feasibility of 4H-SiC p-i-n Diode for Sensitive Temperature Measurements Between 20.5 K and 802 K
  6. Design of a Gabor Filter HW Accelerator for Applications in Medical Imaging
  7. Low-power Design of a Gravity Rotation Module for HAR Systems Based on Inertial Sensors
  8. Design Criteria for Real-time Processing of HW Gabor Filters in Visual Search
  9. V2O5/4H-SiC Schottky Diode Temperature Sensor: Experiments and Model
  10. Multiplier-Less Stream Processor for 2D Filtering in Visual Search Applications
  11. A V2O5/4H-SiC Schottky diode-based PTAT sensor operating in a wide range of bias currents
  12. An FPGA oprimization of a multiple resolution architecture for LDR to HDR image conversion
  13. Hardware accelerator using Gabor filters for image recognition applications
  14. Hardware architecture for 2D Gaussian filtering of HD images on resource constrained platforms
  15. Analysis of the performances of a fully 4H-SiC insultated DC/AC converters
  16. Dynamic range enhancement for medical image processing
  17. Evaluation of NB-PLC in railway environments
  18. Experimental results on lateral 4H-SiC UV photodiodes
  19. Losses of 4H-SiC DMOFET in high voltage power converters
  20. Optimal design of a Gabor filter for medical imaging applications
  21. Design of a Convolutional Two-Dimensional Filter in FPGA for Image Processing Applications
  22. Novel Advanced Analytical Design Tool for 4H-SiC VDMOSFET Devices
  23. Insights Into Interface Treatments in p-Channel Organic Thin-Film Transistors Based on a Novel Molecular Semiconductor
  24. Weighted Partitioning for Fast Multiplierless Multiple-Constant Convolution Circuit
  25. Application specific image processor for the extension of the dynamic range of images with multiple resolutions
  26. Analysis and modelling of the electric field in the Gate oxide of 4H-SiC DMOSFET
  27. Modelling the I-V-T characteristics of 4H-SiC DMOSFET in presence of SiO2/SiC interface traps and fixed oxide
  28. SiO2/4H-SiC interface traps effects on the input capacitance of DMOSFET
  29. Optimized Design for 4H-SiC Power DMOSFET
  30. Design and FPGA implementation of a real-time processor for the HDR conversion of images and videos
  31. FPGA optimization of convolution-based 2D filtering processor for image processing
  32. A Model of Electric Field Distribution in Gate Oxide and JFET-Region of 4H-SiC DMOSFETs
  33. Design of an offset-tolerant voltage sense amplifier bit-line sensing circuit for SRAM memories
  34. Frame buffer-less stream processor for accurate real-time interest point detection
  35. Analytical Model and Design of 4H-SiC Planar and Trenched JBS Diodes
  36. On the analogy of the potential barrier of trenched JFET and JBS devices
  37. Analytical Description of the Input Capacitance of 4H-SiC DMOSFET’s in Presence of Oxide-Semiconductor Interface Traps
  38. Modeling of the SiO2/SiC Interface-Trapped Charge as a Function of the Surface Potential in 4H-SiC Vertical-DMOSFET
  39. Divanadium Pentoxide/4H-silicon Carbide: A Schottky Contact for Highly Linear Temperature Sensors
  40. Stream Processor for Real-Time Inverse Tone Mapping of Full-HD Images
  41. Analytical Model of the Forward Operation of 4H-SiC Vertical DMOSFET in the Safe Operating Temperature Range
  42. Photovoltaic Behavior of V2O5/4H-SiC Schottky Diodes for Cryogenic Applications
  43. A model of the off-behaviour of 4H–SiC power JFETs
  44. Analytical Prediction of the Cross-Over Point in the Temperature Coefficient of the Forward Characteristics of 4H−SiC p+−i−n Diodes
  45. A Circuital Model of Switching Behaviour of 4H-SiC p+-n-n+ Diodes Valid at any Current and Temperature
  46. On the Crossing-Point of 4H-SiC Power Diodes Characteristics
  47. A Quasi-One-Dimensional Model of the Potential Barrier and Carrier Density in the Channel of Si and 4H-SiC BSITs
  48. An Analytical Model of the Switching Behavior of 4H-SiC p$^{\bm +}$ -n-n$^{\bm +}$ Diodes from Arbitrary Injection Conditions
  49. Design of a context-adaptive variable length encoder for real-time video compression on reconfigurable platforms
  50. Extension of the TPA method for the exact analysis of feedback circuits in terms of the return ratio
  51. A self-consistent model of the static and switching behaviour of 4H-SiC diodes
  52. An area reduced design of the Context-Adaptive Variable-Length encoder suitable for embedded systems
  53. A Self-Consistent Model of the OCVD Behavior of Si and 4H-SiC $\hbox{p}^{+}\hbox{-n-n}^{+}$ Diodes
  54. Limitations of the Open-Circuit Voltage Decay technique applied to 4H-SiC diodes
  55. An Analog Circuit for Accurate OCVD Measurements
  56. Physical model, measurement setup and experiments of a measurement technique of the carrier lifetime profile in power devices
  57. The effect of ITO surface energy on OLED electrical properties
  58. An Analytical Model of an OCVD-Based Measurement Technique of the Local Carrier Lifetime
  59. An H.264 Encoder for Real Time Video Processing Designed for SPEAr Customizable System-on-Chip Family
  60. Erratum to “Investigation of the damage as induced by 1.7 MeV protons in an amorphous/crystalline silicon heterojunction solar cell” [Solar Energy Materials & Solar Cells 83 (2004) 435–446]
  61. Test structure design for measuring electron and hole mobilities at very high injection levels
  62. Experimental measurements of majority and minority carrier lifetime profile in SI epilayers by the use of an improved OCVD method
  63. Investigation of the damage as induced by 1.7MeV protons in an amorphous/crystalline silicon heterojunction solar cell
  64. Modelling and characterisation of the OCVD response at an arbitrary time and injection level