This shareable PDF can be hosted on any platform or network and is fully compliant with publisher copyright.
This publication has not yet been explained in plain language by the author(s). However, you can still read the publication.
If you are one of the authors, claim this publication so you can create a plain language summary to help more people find, understand and use it.
This page is a summary of: Effect of Ar post-oxidation annealing on oxide–4H-SiC interfaces studied by capacitance to voltage measurements and photoemission spectroscopy, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films, March 2005, American Vacuum Society,
DOI: 10.1116/1.1865153.
You can read the full text:
The following have contributed to this page
