All Stories

  1. Quartz crystal microbalance for real-time monitoring chlorosilane gas transport in slim vertical cold wall chemical vapor deposition reactor
  2. Real time evaluation of silicon epitaxial growth process by exhaust gas measurement using quartz crystal microbalance
  3. Advantages of a slim vertical gas channel at high SiHCl3 concentrations for atmospheric pressure silicon epitaxial growth
  4. Transport phenomena in a slim vertical atmospheric pressure chemical vapor deposition reactor utilizing natural convection
  5. Proposal of the mechanism for inclination growth on a mesa top during the 4H-SiC trench filling epitaxy
  6. Investigation of the giant step bunching induced by the etching of 4H-SiC in Ar–H2mix gases
  7. In Situ Cleaning Process of Silicon Carbide Epitaxial Reactor for Removing Film-Type Deposition Formed on Susceptor
  8. Reflector Influence on Rapid Heating of Minimal Manufacturing Chemical Vapor Deposition Reactor
  9. Hopping conduction range of heavily Al-doped 4H-SiC thick epilayers grown by CVD
  10. Repetition of In Situ Cleaning Using Chlorine Trifluoride Gas for Silicon Carbide Epitaxial Reactor
  11. Epitaxial growth and characterization of thick multi-layer 4H-SiC for very high-voltage insulated gate bipolar transistors
  12. Cleaning Process for Using Chlorine Trifluoride Gas Silicon Carbide Chemical Vapor Deposition Reactor
  13. Growth and Characterization of Thick Multi-Layer 4H-SiC Epiwafer for Very High-Voltage p-Channel IGBTs
  14. Investigation of giant step bunching in 4H-SiC homoepitaxial growth: Proposal of cluster effect model
  15. Practical Thermal Condition of Silicon CVD Reactor for Minimal Manufacturing
  16. Experiment on alleviating the bending of CVD-grown heavily Al-doped 4H-SiC epiwafer by codoping of N
  17. In Situ Cleaning Process of Silicon Carbide Epitaxial Reactor
  18. Proposal of quasi thermal equilibrium model for etching phenomenon by gases: Example of the etching of 4H-SiC by H2
  19. Characterization of the Defect Evolution in Thick Heavily Al-Doped 4H-SiC Epilayers
  20. Epitaxial Growth of Thick Multi-Layer 4H-SiC for the Fabrication of Very High-Voltage C-Face n-Channel IGBT
  21. Simulation Studies on Giant Step Bunching Accompanying Trapezoid-Shape Defects in 4H-SiC Epitaxial Layer
  22. Simulation Studies on Giant Step Bunching in 4H-SiC Epitaxial Growth: Cluster Effect
  23. Suppressing Al memory effect on CVD growth of 4H-SiC epilayers by adding hydrogen chloride gas
  24. Cleaning Process Applicable to Silicon Carbide Chemical Vapor Deposition Reactor
  25. The growth of low resistivity, heavily Al-doped 4H–SiC thick epilayers by hot-wall chemical vapor deposition
  26. Suppression of Al Memory-Effect on Growing 4H-SiC Epilayers by Hot-Wall Chemical Vapor Deposition
  27. Low Resistivity, Thick Heavily Al-Doped 4H-SiC Epilayers Grown by Hot-Wall Chemical Vapor Deposition
  28. Two-Dimensional Roughness Growth at Surface and Interface of SiO2 Films during Thermal Oxidation of 4H-SiC(0001)
  29. RF-MBE growth of InN on 4H-SiC (0001) with off-angles
  30. Experimental Verification of the Cluster Effect on Giant Step Bunching on 4H-SiC (0001) Surfaces
  31. Shape Transformation of 4H-SiC Microtrenches by Hydrogen Annealing
  32. Development of a Practical High-Rate CVD System
  33. Origin of Giant Step Bunching on 4H-SiC (0001) Surfaces
  34. Influence of Growth Conditions and Substrate Properties on Formation of Interfacial Dislocations and Dislocation Half-loop Arrays in 4H-SiC(0001) and (000-1) Epitaxy
  35. Reduction of defects propagating into 3C-SiC homoepilayers by reactive ion etching of 3C-SiC heteroepilayer substrates
  36. Proposal of the Thermal Equilibrium Model for SiC Hydrogen Etching Phenomena
  37. Effect of Reduced Pressure on 3C-SiC Heteroepitaxial Growth on Si by CVD
  38. Dependence of stacking fault and twin densities on deposition conditions during 3C-SiC heteroepitaxial growth on on-axis Si(001) substrates
  39. Reductions of twin and protrusion in 3C-SiC heteroepitaxial growth on Si(100)
  40. Effect of Ar post-oxidation annealing on oxide–4H-SiC interfaces studied by capacitance to voltage measurements and photoemission spectroscopy
  41. In situObservation of Clusters in Gas Phase during 4H-SiC Epitaxial Growth by Chemical Vapor Deposition Method
  42. 4H-SiC Carbon-Face Epitaxial Layers Grown by Low-Pressure Hot-Wall Chemical Vapor Deposition
  43. Influence of C/Si Ratio on the 4H-SiC (0001) Epitaxial Growth and a Keynote for High-Rate Growth
  44. Photoemission Spectroscopic Studies on Oxide/SiC Interfaces Formed by Dry and Pyrogenic Oxidation
  45. Relationship between the Current Direction in the Inversion Layer and the Electrical Characteristics of Metal-Oxide-Semiconductor Field Effect Transistors on 3C-SiC
  46. Anomalous pressure dependence of light emission in cubic InGaN
  47. Investigation of antiphase domain annihilation mechanism in 3C–SiC on Si substrates
  48. Uniformity of 4H–SiC epitaxial layers grown on 3-in diameter substrates
  49. N-channel MOSFETs fabricated on homoepitaxy-grown 3C-SiC films
  50. The Electrical Characteristics of Metal-Oxide-Semiconductor Field Effect Transistors Fabricated on Cubic Silicon Carbide
  51. Influence of InN mole fraction on the recombination processes of localized excitons in strained cubic InxGa1−xN/GaN multiple quantum wells
  52. Light emission versus energy gap in group-III nitrides: hydrostatic pressure studies
  53. Recombination dynamics of localized excitons in cubic In[sub x]Ga[sub 1−x]N/GaN multiple quantum wells grown by radio frequency molecular beam epitaxy on 3C–SiC substrate
  54. Pressure Coefficients of the Light Emission in Cubic InGaN Epilayers and Cubic InGaN/GaN Quantum Wells
  55. Influence of stacking faults on the performance of 4H–SiC Schottky barrier diodes fabricated on (112̄0) face
  56. Different pressure coefficients of the light emission in cubic and hexagonal InGaN/GaN quantum wells
  57. Characterization of the Interfaces between SiC and Oxide Films by Spectroscopic Ellipsometry
  58. The Investigation of 4H-SiC/SiO2 Interfaces by Optical and Electrical Measurements
  59. 3C-SiC(100) Homoepitaxial Growth by Chemical Vapor Deposition and Schottky Barrier Junction Characteristics
  60. Comparative Study of Heteroepitaxially and Homoepitaxially Grown 3C-SiC Films
  61. Epitaxial Growth of (11-20) 4H-SiC Using Substrate Grown in the [11-20] Direction
  62. High-Rate Epitaxial Growth of 4H-SiC Using a Vertical-Type, Quasi-Hot-Wall CVD Reactor
  63. Influence of the Crystalline Quality of Epitaxial Layers on Inversion Channel Mobility in 4H-SiC MOSFETs
  64. Investigation of Residual Impurities in 4H-SiC Epitaxial Layers Grown by Hot-Wall Chemical Vapor Deposition
  65. Investigation of the Relationship between Defects and Electrical Properties of 3C-SiC Epilayers
  66. Replication of Defects from 4H-SiC Wafer to Epitaxial Layer
  67. Sensitive Detection of Defects in α and β SiC by Raman Scattering
  68. Simulation of High-Temperature SiC Epitaxial Growth Using Vertical, Quasi-Hot-Wall CVD Reactor
  69. Measurements of the Depth Profile of the Refractive Indices in Oxide Films on SiC by Spectroscopic Ellipsometry
  70. Localized exciton dynamics in strained cubic In0.1Ga0.9N/GaN multiple quantum wells
  71. Detection of defects in SiC crystalline films by Raman scattering
  72. Optical Properties of Cubic InGaN/GaN Multiple Quantum Wells on 3C-SiC Substrates by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy
  73. Band gap bowing and exciton localization in strained cubic InxGa1−xN films grown on 3C-SiC (001) by rf molecular-beam epitaxy
  74. Electrical Characterization at Cubic AlN/GaN Heterointerface Grown by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy
  75. Growth and characterization of cubic InGaN epilayers on 3C-SiC by RF MBE
  76. Piezoelectric Field and its Influence on the Pressure Behavior of the Light Emission from InGaN/GaN and GaN/AlGaN Quantum Wells
  77. Similarities in the Optical Properties of Hexagonal and Cubic InGaN Quantum Wells
  78. Control of Surface Morphologies for Epitaxial Growth on Low Off-Angle 4H-SiC (0001) Substrates
  79. Optical and structural studies in InGaN quantum well structure laser diodes
  80. Characterization of Oxide Films on SiC by Spectroscopic Ellipsometry
  81. Optical Constants of Cubic GaN, AlN, and AlGaN Alloys
  82. Coimplantation Effects of (C and Si)/Ga in 6H-SiC
  83. Competitive Growth between Deposition and Etching in 4H-SiC CVD Epitaxy Using Quasi-Hot Wall Reactor
  84. Effects of Steam Annealing on Electrical Characteristics of 3C-SiC Metal-Oxide-Semiconductor Structures
  85. Observation of Cubic GaN/AlN Heterointerface Formation by RHEED in Plasma-Assisted Molecular Beam Epitaxy
  86. Pre-Growth Treatment of 4H-SiC Substrates by Hydrogen Etching at Low Pressure
  87. Schottky Barrier Characteristics of 3C-SiC Epilayers Grown by Low Pressure Chemical Vapor Deposition
  88. The APD Annihilation Mechanism of 3C-SiC Hetero-Epilayer on Si(001) Substrate
  89. Optical Characterization of Cubic AlGaN Epilayers by Cathodoluminescence and Spectroscopic Ellipsometry
  90. Elongated shaped Si Island Formation on 3C-SiC by Chemical Vapor Deposition and Its Application to Antiphase Domain Observation
  91. Growth and characterization of cubic AlGaN and AlN epilayers by RF-plasma assisted MBE
  92. Raman studies on phonon modes in cubic AlGaN alloy
  93. Investigation of Positron Moderator Materials for Electron-Linac-Based Slow Positron Beamlines
  94. Arsenic surfactant effects and arsenic mediated molecular beam epitaxial growth for cubic GaN
  95. Growth of cubic III-nitrides by gas source MBE using atomic nitrogen plasma: GaN, AlGaN and AlN
  96. Raman scattering characterization of group III-nitride epitaxial layers including cubic phase
  97. CVD Growth Mechanism of 3C-SiC on Si Substrates
  98. Surface Morphology of 3C-SiC Heteroepitaxial Layers Grown by LPCVD on Si Substrates
  99. Surface Reconstruction and As Surfactant Effects on MBE-Grown GaN Epilayers
  100. The Characterization of SiC Hot-Implanted with Ga +
  101. Atomically Flat 3C-SiC Epilayers by Low Pressure Chemical Vapor Deposition
  102. Positron Lifetime Study on Semiconductor Thin Films