All Stories

  1. Quartz crystal microbalance for real-time monitoring chlorosilane gas transport in slim vertical cold wall chemical vapor deposition reactor

    Article • Materials Science in Semiconductor Processing, February 2020, Elsevier

    Yuuki Ishida

  2. Real time evaluation of silicon epitaxial growth process by exhaust gas measurement using quartz crystal microbalance

    Article • Materials Science in Semiconductor Processing, December 2018, Elsevier

    Yuuki Ishida

  3. Advantages of a slim vertical gas channel at high SiHCl3 concentrations for atmospheric pressure silicon epitaxial growth

    Article • Materials Science in Semiconductor Processing, November 2018, Elsevier

    Yuuki Ishida

  4. Transport phenomena in a slim vertical atmospheric pressure chemical vapor deposition reactor utilizing natural convection

    Article • Materials Science in Semiconductor Processing, November 2017, Elsevier

    Yuuki Ishida

  5. Proposal of the mechanism for inclination growth on a mesa top during the 4H-SiC trench filling epitaxy

    Article • Japanese Journal of Applied Physics, June 2017, Japan Society of Applied Physics

    Yuuki Ishida

  6. Investigation of the giant step bunching induced by the etching of 4H-SiC in Ar–H2mix gases

    Article • Japanese Journal of Applied Physics, July 2016, Japan Society of Applied Physics

    Yuuki Ishida

  7. In Situ Cleaning Process of Silicon Carbide Epitaxial Reactor for Removing Film-Type Deposition Formed on Susceptor

    Article • Materials Science Forum, May 2016, Trans Tech Publications

    Professor HITOSHI HABUKA, Yuuki Ishida

  8. Reflector Influence on Rapid Heating of Minimal Manufacturing Chemical Vapor Deposition Reactor

    Article • ECS Journal of Solid State Science and Technology, January 2016, The Electrochemical Society

    Yuuki Ishida

  9. Hopping conduction range of heavily Al-doped 4H-SiC thick epilayers grown by CVD

    Article • Applied Physics Express, November 2015, Japan Society of Applied Physics

    Yuuki Ishida

  10. Repetition of In Situ Cleaning Using Chlorine Trifluoride Gas for Silicon Carbide Epitaxial Reactor

    Article • ECS Journal of Solid State Science and Technology, November 2015, The Electrochemical Society

    Yuuki Ishida

  11. Epitaxial growth and characterization of thick multi-layer 4H-SiC for very high-voltage insulated gate bipolar transistors

    Article • Journal of Applied Physics, August 2015, American Institute of Physics

    Yuuki Ishida

  12. Cleaning Process for Using Chlorine Trifluoride Gas Silicon Carbide Chemical Vapor Deposition Reactor

    Article • Materials Science Forum, June 2015, Trans Tech Publications

    Professor HITOSHI HABUKA, Yuuki Ishida

  13. Growth and Characterization of Thick Multi-Layer 4H-SiC Epiwafer for Very High-Voltage p-Channel IGBTs

    Article • Materials Science Forum, June 2015, Trans Tech Publications

    Yuuki Ishida

  14. Investigation of giant step bunching in 4H-SiC homoepitaxial growth: Proposal of cluster effect model

    Article • Japanese Journal of Applied Physics, May 2015, Japan Society of Applied Physics

    Yuuki Ishida

  15. Practical Thermal Condition of Silicon CVD Reactor for Minimal Manufacturing

    Article • March 2015, World Scientific Pub Co Pte Lt

    Yuuki Ishida

  16. Experiment on alleviating the bending of CVD-grown heavily Al-doped 4H-SiC epiwafer by codoping of N

    Article • Japanese Journal of Applied Physics, February 2015, Japan Society of Applied Physics

    Yuuki Ishida

  17. In Situ Cleaning Process of Silicon Carbide Epitaxial Reactor

    Article • ECS Journal of Solid State Science and Technology, January 2015, The Electrochemical Society

    Yuuki Ishida

  18. Proposal of quasi thermal equilibrium model for etching phenomenon by gases: Example of the etching of 4H-SiC by H2

    Article • Japanese Journal of Applied Physics, March 2014, Institute of Physics Publishing

    Yuuki Ishida

  19. Characterization of the Defect Evolution in Thick Heavily Al-Doped 4H-SiC Epilayers

    Article • Materials Science Forum, February 2014, Trans Tech Publications

    Yuuki Ishida

  20. Epitaxial Growth of Thick Multi-Layer 4H-SiC for the Fabrication of Very High-Voltage C-Face n-Channel IGBT

    Article • Materials Science Forum, February 2014, Trans Tech Publications

    Yuuki Ishida

  21. Simulation Studies on Giant Step Bunching Accompanying Trapezoid-Shape Defects in 4H-SiC Epitaxial Layer

    Article • Materials Science Forum, February 2014, Trans Tech Publications

    Yuuki Ishida

  22. Simulation Studies on Giant Step Bunching in 4H-SiC Epitaxial Growth: Cluster Effect

    Article • Materials Science Forum, February 2014, Trans Tech Publications

    Yuuki Ishida

  23. Suppressing Al memory effect on CVD growth of 4H-SiC epilayers by adding hydrogen chloride gas

    Article • Japanese Journal of Applied Physics, January 2014, Institute of Physics Publishing

    Yuuki Ishida

  24. Cleaning Process Applicable to Silicon Carbide Chemical Vapor Deposition Reactor

    Article • ECS Journal of Solid State Science and Technology, October 2013, The Electrochemical Society

    Professor HITOSHI HABUKA, Yuuki Ishida

  25. The growth of low resistivity, heavily Al-doped 4H–SiC thick epilayers by hot-wall chemical vapor deposition

    Article • Journal of Crystal Growth, October 2013, Elsevier

    Yuuki Ishida

  26. Suppression of Al Memory-Effect on Growing 4H-SiC Epilayers by Hot-Wall Chemical Vapor Deposition

    Article • Japanese Journal of Applied Physics, April 2013, Institute of Physics Publishing

    Yuuki Ishida

  27. Low Resistivity, Thick Heavily Al-Doped 4H-SiC Epilayers Grown by Hot-Wall Chemical Vapor Deposition

    Article • Materials Science Forum, January 2013, Trans Tech Publications

    Yuuki Ishida

  28. Two-Dimensional Roughness Growth at Surface and Interface of SiO2 Films during Thermal Oxidation of 4H-SiC(0001)

    Article • Materials Science Forum, May 2012, Trans Tech Publications

    Yuuki Ishida

  29. RF-MBE growth of InN on 4H-SiC (0001) with off-angles

    Article • physica status solidi c, May 2010, Wiley

    Prof. Yasuto YH Hijikata, Yuuki Ishida, Professor Hiroyuki Yaguchi

  30. Experimental Verification of the Cluster Effect on Giant Step Bunching on 4H-SiC (0001) Surfaces

    Article • Materials Science Forum, April 2010, Trans Tech Publications

    Yuuki Ishida

  31. Shape Transformation of 4H-SiC Microtrenches by Hydrogen Annealing

    Article • Japanese Journal of Applied Physics, April 2009, Japan Society of Applied Physics

    Yuuki Ishida

  32. Development of a Practical High-Rate CVD System

    Article • Materials Science Forum, September 2008, Trans Tech Publications

    Yuuki Ishida

  33. Origin of Giant Step Bunching on 4H-SiC (0001) Surfaces

    Article • Materials Science Forum, September 2008, Trans Tech Publications

    Yuuki Ishida

  34. Influence of Growth Conditions and Substrate Properties on Formation of Interfacial Dislocations and Dislocation Half-loop Arrays in 4H-SiC(0001) and (000-1) Epitaxy

    Article • MRS Proceedings, January 2008, Cambridge University Press

    Yuuki Ishida

  35. Reduction of defects propagating into 3C-SiC homoepilayers by reactive ion etching of 3C-SiC heteroepilayer substrates

    Article • Journal of Crystal Growth, October 2007, Elsevier

    Yuuki Ishida

  36. Proposal of the Thermal Equilibrium Model for SiC Hydrogen Etching Phenomena

    Article • Materials Science Forum, October 2006, Trans Tech Publications

    Yuuki Ishida

  37. Effect of Reduced Pressure on 3C-SiC Heteroepitaxial Growth on Si by CVD

    Article • Chemical Vapor Deposition, September 2006, Wiley

    Yuuki Ishida

  38. Dependence of stacking fault and twin densities on deposition conditions during 3C-SiC heteroepitaxial growth on on-axis Si(001) substrates

    Article • Journal of Crystal Growth, May 2006, Elsevier

    Yuuki Ishida

  39. Reductions of twin and protrusion in 3C-SiC heteroepitaxial growth on Si(100)

    Article • Journal of Crystal Growth, May 2006, Elsevier

    Yuuki Ishida

  40. Effect of Ar post-oxidation annealing on oxide–4H-SiC interfaces studied by capacitance to voltage measurements and photoemission spectroscopy

    Article • Journal of Vacuum Science & Technology A Vacuum Surfaces and Films, March 2005, American Vacuum Society

    Prof. Yasuto YH Hijikata, Yuuki Ishida, Professor Hiroyuki Yaguchi

  41. In situObservation of Clusters in Gas Phase during 4H-SiC Epitaxial Growth by Chemical Vapor Deposition Method

    Article • Japanese Journal of Applied Physics, August 2004, Japan Society of Applied Physics

    Yuuki Ishida

  42. 4H-SiC Carbon-Face Epitaxial Layers Grown by Low-Pressure Hot-Wall Chemical Vapor Deposition

    Article • Materials Science Forum, June 2004, Trans Tech Publications

    Yuuki Ishida

  43. Influence of C/Si Ratio on the 4H-SiC (0001) Epitaxial Growth and a Keynote for High-Rate Growth

    Article • Materials Science Forum, June 2004, Trans Tech Publications

    Yuuki Ishida

  44. Photoemission Spectroscopic Studies on Oxide/SiC Interfaces Formed by Dry and Pyrogenic Oxidation

    Article • Materials Science Forum, June 2004, Trans Tech Publications

    Yuuki Ishida, Professor Hiroyuki Yaguchi

  45. Relationship between the Current Direction in the Inversion Layer and the Electrical Characteristics of Metal-Oxide-Semiconductor Field Effect Transistors on 3C-SiC

    Article • Materials Science Forum, June 2004, Trans Tech Publications

    Yuuki Ishida

  46. Anomalous pressure dependence of light emission in cubic InGaN

    Article • physica status solidi c, December 2003, Wiley

    Yuuki Ishida

  47. Investigation of antiphase domain annihilation mechanism in 3C–SiC on Si substrates

    Article • Journal of Applied Physics, October 2003, American Institute of Physics

    Yuuki Ishida

  48. Uniformity of 4H–SiC epitaxial layers grown on 3-in diameter substrates

    Article • Journal of Crystal Growth, October 2003, Elsevier

    Yuuki Ishida

  49. N-channel MOSFETs fabricated on homoepitaxy-grown 3C-SiC films

    Article • IEEE Electron Device Letters, July 2003, Institute of Electrical & Electronics Engineers (IEEE)

    Yuuki Ishida

  50. The Electrical Characteristics of Metal-Oxide-Semiconductor Field Effect Transistors Fabricated on Cubic Silicon Carbide

    Article • Japanese Journal of Applied Physics, June 2003, Japan Society of Applied Physics

    Yuuki Ishida

  51. Influence of InN mole fraction on the recombination processes of localized excitons in strained cubic InxGa1−xN/GaN multiple quantum wells

    Article • Journal of Applied Physics, February 2003, American Institute of Physics

    Yuuki Ishida

  52. Light emission versus energy gap in group-III nitrides: hydrostatic pressure studies

    Article • physica status solidi (b), February 2003, Wiley

    Yuuki Ishida

  53. Recombination dynamics of localized excitons in cubic In[sub x]Ga[sub 1−x]N/GaN multiple quantum wells grown by radio frequency molecular beam epitaxy on 3C–SiC substrate

    Article • Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena, January 2003, American Vacuum Society

    Yuuki Ishida

  54. Pressure Coefficients of the Light Emission in Cubic InGaN Epilayers and Cubic InGaN/GaN Quantum Wells

    Article • physica status solidi (b), December 2002, Wiley

    Yuuki Ishida

  55. Influence of stacking faults on the performance of 4H–SiC Schottky barrier diodes fabricated on (112̄0) face

    Article • Frontiers in Human Neuroscience, October 2002, American Institute of Physics

    Yuuki Ishida

  56. Different pressure coefficients of the light emission in cubic and hexagonal InGaN/GaN quantum wells

    Article • Frontiers in Human Neuroscience, July 2002, American Institute of Physics

    Yuuki Ishida

  57. Characterization of the Interfaces between SiC and Oxide Films by Spectroscopic Ellipsometry

    Article • Materials Science Forum, April 2002, Trans Tech Publications

    Prof. Yasuto YH Hijikata, Yuuki Ishida, Professor Hiroyuki Yaguchi

  58. The Investigation of 4H-SiC/SiO2 Interfaces by Optical and Electrical Measurements

    Article • Materials Science Forum, April 2002, Trans Tech Publications

    Prof. Yasuto YH Hijikata, Yuuki Ishida

  59. 3C-SiC(100) Homoepitaxial Growth by Chemical Vapor Deposition and Schottky Barrier Junction Characteristics

    Article • Materials Science Forum, April 2002, Trans Tech Publications

    Yuuki Ishida

  60. Comparative Study of Heteroepitaxially and Homoepitaxially Grown 3C-SiC Films

    Article • Materials Science Forum, April 2002, Trans Tech Publications

    Yuuki Ishida

  61. Epitaxial Growth of (11-20) 4H-SiC Using Substrate Grown in the [11-20] Direction

    Article • Materials Science Forum, April 2002, Trans Tech Publications

    Yuuki Ishida

  62. High-Rate Epitaxial Growth of 4H-SiC Using a Vertical-Type, Quasi-Hot-Wall CVD Reactor

    Article • Materials Science Forum, April 2002, Trans Tech Publications

    Yuuki Ishida

  63. Influence of the Crystalline Quality of Epitaxial Layers on Inversion Channel Mobility in 4H-SiC MOSFETs

    Article • Materials Science Forum, April 2002, Trans Tech Publications

    Yuuki Ishida

  64. Investigation of Residual Impurities in 4H-SiC Epitaxial Layers Grown by Hot-Wall Chemical Vapor Deposition

    Article • Materials Science Forum, April 2002, Trans Tech Publications

    Yuuki Ishida

  65. Investigation of the Relationship between Defects and Electrical Properties of 3C-SiC Epilayers

    Article • Materials Science Forum, April 2002, Trans Tech Publications

    Yuuki Ishida

  66. Replication of Defects from 4H-SiC Wafer to Epitaxial Layer

    Article • Materials Science Forum, April 2002, Trans Tech Publications

    Yuuki Ishida

  67. Sensitive Detection of Defects in α and β SiC by Raman Scattering

    Article • Materials Science Forum, April 2002, Trans Tech Publications

    Yuuki Ishida

  68. Simulation of High-Temperature SiC Epitaxial Growth Using Vertical, Quasi-Hot-Wall CVD Reactor

    Article • Materials Science Forum, April 2002, Trans Tech Publications

    Yuuki Ishida

  69. Measurements of the Depth Profile of the Refractive Indices in Oxide Films on SiC by Spectroscopic Ellipsometry

    Article • Japanese Journal of Applied Physics, February 2002, Japan Society of Applied Physics

    Prof. Yasuto YH Hijikata, Yuuki Ishida, Professor Hiroyuki Yaguchi

  70. Localized exciton dynamics in strained cubic In0.1Ga0.9N/GaN multiple quantum wells

    Article • Frontiers in Human Neuroscience, December 2001, American Institute of Physics

    Yuuki Ishida

  71. Detection of defects in SiC crystalline films by Raman scattering

    Article • Physica B Condensed Matter, December 2001, Elsevier

    Yuuki Ishida

  72. Optical Properties of Cubic InGaN/GaN Multiple Quantum Wells on 3C-SiC Substrates by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy

    Article • phys stat sol (a), December 2001, Wiley

    Yuuki Ishida

  73. Band gap bowing and exciton localization in strained cubic InxGa1−xN films grown on 3C-SiC (001) by rf molecular-beam epitaxy

    Article • Frontiers in Human Neuroscience, November 2001, American Institute of Physics

    Yuuki Ishida

  74. Electrical Characterization at Cubic AlN/GaN Heterointerface Grown by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy

    Article • physica status solidi (b), November 2001, Wiley

    Yuuki Ishida

  75. Growth and characterization of cubic InGaN epilayers on 3C-SiC by RF MBE

    Article • Journal of Crystal Growth, July 2001, Elsevier

    Yuuki Ishida

  76. Piezoelectric Field and its Influence on the Pressure Behavior of the Light Emission from InGaN/GaN and GaN/AlGaN Quantum Wells

    Article • MRS Proceedings, January 2001, Cambridge University Press

    Yuuki Ishida

  77. Similarities in the Optical Properties of Hexagonal and Cubic InGaN Quantum Wells

    Article • MRS Proceedings, January 2001, Cambridge University Press

    Yuuki Ishida

  78. Control of Surface Morphologies for Epitaxial Growth on Low Off-Angle 4H-SiC (0001) Substrates

    Article • Materials Science Forum, January 2001, Trans Tech Publications

    Yuuki Ishida

  79. Optical and structural studies in InGaN quantum well structure laser diodes

    Article • Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena, January 2001, American Vacuum Society

    Yuuki Ishida

  80. Characterization of Oxide Films on SiC by Spectroscopic Ellipsometry

    Article • Japanese Journal of Applied Physics, October 2000, Japan Society of Applied Physics

    Prof. Yasuto YH Hijikata, Yuuki Ishida, Professor Hiroyuki Yaguchi

  81. Optical Constants of Cubic GaN, AlN, and AlGaN Alloys

    Article • Japanese Journal of Applied Physics, June 2000, Japan Society of Applied Physics

    Yuuki Ishida, Professor Hiroyuki Yaguchi

  82. Coimplantation Effects of (C and Si)/Ga in 6H-SiC

    Article • Materials Science Forum, May 2000, Trans Tech Publications

    Yuuki Ishida

  83. Competitive Growth between Deposition and Etching in 4H-SiC CVD Epitaxy Using Quasi-Hot Wall Reactor

    Article • Materials Science Forum, May 2000, Trans Tech Publications

    Yuuki Ishida

  84. Effects of Steam Annealing on Electrical Characteristics of 3C-SiC Metal-Oxide-Semiconductor Structures

    Article • Materials Science Forum, May 2000, Trans Tech Publications

    Yuuki Ishida

  85. Observation of Cubic GaN/AlN Heterointerface Formation by RHEED in Plasma-Assisted Molecular Beam Epitaxy

    Article • Materials Science Forum, May 2000, Trans Tech Publications

    Yuuki Ishida

  86. Pre-Growth Treatment of 4H-SiC Substrates by Hydrogen Etching at Low Pressure

    Article • Materials Science Forum, May 2000, Trans Tech Publications

    Yuuki Ishida

  87. Schottky Barrier Characteristics of 3C-SiC Epilayers Grown by Low Pressure Chemical Vapor Deposition

    Article • Materials Science Forum, May 2000, Trans Tech Publications

    Yuuki Ishida

  88. The APD Annihilation Mechanism of 3C-SiC Hetero-Epilayer on Si(001) Substrate

    Article • Materials Science Forum, May 2000, Trans Tech Publications

    Yuuki Ishida

  89. Optical Characterization of Cubic AlGaN Epilayers by Cathodoluminescence and Spectroscopic Ellipsometry

    Article • physica status solidi (b), November 1999, Wiley

    Yuuki Ishida, Professor Hiroyuki Yaguchi

  90. Elongated shaped Si Island Formation on 3C-SiC by Chemical Vapor Deposition and Its Application to Antiphase Domain Observation

    Article • Japanese Journal of Applied Physics, June 1999, Japan Society of Applied Physics

    Yuuki Ishida

  91. Growth and characterization of cubic AlGaN and AlN epilayers by RF-plasma assisted MBE

    Article • Journal of Crystal Growth, May 1999, Elsevier

    Yuuki Ishida

  92. Raman studies on phonon modes in cubic AlGaN alloy

    Article • Frontiers in Human Neuroscience, January 1999, American Institute of Physics

    Yuuki Ishida

  93. Investigation of Positron Moderator Materials for Electron-Linac-Based Slow Positron Beamlines

    Article • Japanese Journal of Applied Physics, August 1998, Japan Society of Applied Physics

    Yuuki Ishida

  94. Arsenic surfactant effects and arsenic mediated molecular beam epitaxial growth for cubic GaN

    Article • Frontiers in Human Neuroscience, June 1998, American Institute of Physics

    Yuuki Ishida

  95. Growth of cubic III-nitrides by gas source MBE using atomic nitrogen plasma: GaN, AlGaN and AlN

    Article • Journal of Crystal Growth, June 1998, Elsevier

    Yuuki Ishida

  96. Raman scattering characterization of group III-nitride epitaxial layers including cubic phase

    Article • Journal of Crystal Growth, June 1998, Elsevier

    Yuuki Ishida

  97. CVD Growth Mechanism of 3C-SiC on Si Substrates

    Article • Materials Science Forum, February 1998, Trans Tech Publications

    Yuuki Ishida

  98. Surface Morphology of 3C-SiC Heteroepitaxial Layers Grown by LPCVD on Si Substrates

    Article • Materials Science Forum, February 1998, Trans Tech Publications

    Yuuki Ishida

  99. Surface Reconstruction and As Surfactant Effects on MBE-Grown GaN Epilayers

    Article • Materials Science Forum, February 1998, Trans Tech Publications

    Yuuki Ishida

  100. The Characterization of SiC Hot-Implanted with Ga +

    Article • Materials Science Forum, February 1998, Trans Tech Publications

    Yuuki Ishida

  101. Atomically Flat 3C-SiC Epilayers by Low Pressure Chemical Vapor Deposition

    Article • Japanese Journal of Applied Physics, November 1997, Japan Society of Applied Physics

    Yuuki Ishida

  102. Positron Lifetime Study on Semiconductor Thin Films

    Article • Materials Science Forum, September 1997, Trans Tech Publications

    Yuuki Ishida