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  1. Photoluminescence intensity change of GaP1−xNx alloys by laser irradiation

    Article • AIP Advances, September 2020, American Institute of Physics

    Professor Hiroyuki Yaguchi

  2. Detection of Nonradiative Recombination Centers in GaPN (N:0.105%) by Below‐Gap Excitation Light

    Article • physica status solidi (b), October 2019, Wiley

    Professor Hiroyuki Yaguchi

  3. Growth temperature dependence of cubic GaN step structures and cubic InN dot arrays grown on MgO (001) vicinal substrates

    Article • Japanese Journal of Applied Physics, May 2019, Institute of Physics Publishing

    Professor Hiroyuki Yaguchi

  4. Evolution of morphology and crystalline quality of DC-sputtered AlN films with high-temperature annealing

    Article • Japanese Journal of Applied Physics, May 2019, Institute of Physics Publishing

    Professor Hiroyuki Yaguchi

  5. Photoluminescence characterization of nonradiative recombination centers in MOVPE grown GaAs:N δ-doped superlattice structure

    Article • Optical Materials, March 2019, Elsevier

    Professor Hiroyuki Yaguchi

  6. Effects of solvent vapor annealing on organic photovoltaics with a new type of solution-processable oligothiophene-based electronic donor material

    Article • Japanese Journal of Applied Physics, July 2018, Institute of Physics Publishing

    Professor Hiroyuki Yaguchi

  7. Growth of InGaAs:Nδ-doped superlattices for multi-junction solar cells

    Article • June 2018, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Hiroyuki Yaguchi

  8. Nonradiative recombination centers in GaAs:N δ-doped superlattice revealed by two-wavelength-excited photoluminescence

    Article • Journal of Applied Physics, April 2018, American Institute of Physics

    Professor Hiroyuki Yaguchi

  9. Biexciton Emission From Single Quantum-Confined Structures in N-Polar (000-1) InGaN/GaN Multiple Quantum Wells

    Article • physica status solidi (b), December 2017, Wiley

    Professor Hiroyuki Yaguchi

  10. Growth of InN/GaN dots on 4H-SiC(0001) 4° off vicinal substrates by molecular beam epitaxy

    Article • Journal of Crystal Growth, November 2017, Elsevier

    Professor Hiroyuki Yaguchi

  11. Photoluminescence Characterization of Carrier Recombination Centers in 4H-SiC Substrates by Utilizing below Gap Excitation

    Article • Materials Science Forum, May 2017, Trans Tech Publications

    Professor Hiroyuki Yaguchi

  12. Spectral change of intermediate band luminescence in GaP:N due to below-gap excitation: Discrimination from thermal activation

    Article • physica status solidi (b), November 2016, Wiley

    Professor Hiroyuki Yaguchi

  13. Self-organized growth of cubic InN dot arrays on cubic GaN using MgO (001) vicinal substrates

    Article • physica status solidi (b), November 2016, Wiley

    Professor Hiroyuki Yaguchi

  14. Optical characterization of carrier recombination processes in GaPN by two-wavelength excited photoluminescence

    Article • June 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Hiroyuki Yaguchi

  15. Self-organized growth of cubic InN dot arrays on MgO (001) vicinal substrates

    Article • June 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Hiroyuki Yaguchi

  16. Two-wavelength excited photoluminescence in 4H-SiC substrate -dependence on BGE power density-

    Article • June 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Hiroyuki Yaguchi

  17. Photoluminescence study of oxidation-induced faults in 4H-SiC epilayers

    Article • AIP Advances, December 2015, American Institute of Physics

    Prof. Yasuto YH Hijikata, Professor Hiroyuki Yaguchi

  18. Investigation of SiC/Oxide Interface Structures by Spectroscopic Ellipsometry

    Article • September 2015, IntechOpen

    Professor Hiroyuki Yaguchi

  19. Microstructures of InN film on 4H-SiC (0001) substrate grown by RF-MBE

    Article • Journal of Semiconductors, August 2015, Institute of Physics Publishing

    Professor Hiroyuki Yaguchi

  20. Molecular beam epitaxial growth of intermediate-band materials based on GaAs:N δ-doped superlattices

    Article • Japanese Journal of Applied Physics, July 2015, Japan Society of Applied Physics

    Prof. Yasuto YH Hijikata, Professor Hiroyuki Yaguchi

  21. Control of intermediate-band configuration in GaAs:N δ-doped superlattice

    Article • Japanese Journal of Applied Physics, July 2015, Japan Society of Applied Physics

    Prof. Yasuto YH Hijikata, Professor Hiroyuki Yaguchi

  22. Photoluminescence Study of Oxidation-Induced Stacking Faults in 4H-SiC Epilayers

    Article • Materials Science Forum, June 2015, Trans Tech Publications

    Prof. Yasuto YH Hijikata, Professor Hiroyuki Yaguchi

  23. Surface Orientation Dependence of SiC Oxidation Process Studied by In Situ Spectroscopic Ellipsometry

    Article • Materials Science Forum, June 2015, Trans Tech Publications

    Prof. Yasuto YH Hijikata, Professor Hiroyuki Yaguchi

  24. Growth temperature dependence of the surface segregation of Er atoms in GaAs during molecular beam epitaxy

    Article • Japanese Journal of Applied Physics, April 2015, Japan Society of Applied Physics

    Prof. Yasuto YH Hijikata, Professor Hiroyuki Yaguchi

  25. Differences in SiC thermal oxidation process between crystalline surface orientations observed by in-situ spectroscopic ellipsometry

    Article • Journal of Applied Physics, March 2015, American Institute of Physics

    Prof. Yasuto YH Hijikata, Professor Hiroyuki Yaguchi

  26. Enhanced optical absorption due to E + -related band transition in GaAs:N δ-doped superlattices

    Article • Applied Physics Express, September 2014, Japan Society of Applied Physics

    Prof. Yasuto YH Hijikata, Professor Hiroyuki Yaguchi

  27. Photoreflectance study of the temperature dependence of excitonic transitions in dilute GaAsN alloys

    Article • phys stat sol (a), March 2014, Wiley

    Prof. Yasuto YH Hijikata, Professor Hiroyuki Yaguchi

  28. Si Emission into the Oxide Layer during Oxidation of Silicon Carbide

    Article • Materials Science Forum, February 2014, Trans Tech Publications

    Prof. Yasuto YH Hijikata, Professor Hiroyuki Yaguchi

  29. First-principles study on the conduction band electron states of GaAsN alloys

    Article • physica status solidi c, February 2014, Wiley

    Professor Hiroyuki Yaguchi

  30. Analysis of Electronic Structures of Nitrogen δ-Doped GaAs Superlattices for High Efficiency Intermediate Band Solar Cells

    Article • IEEE Journal of Photovoltaics, October 2013, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Yasuto YH Hijikata, Professor Hiroyuki Yaguchi

  31. Conversion Efficiency of Intermediate Band Solar Cells with GaAs:N δ-Doped Superlattices

    Article • Japanese Journal of Applied Physics, October 2013, Institute of Physics Publishing

    Prof. Yasuto YH Hijikata, Professor Hiroyuki Yaguchi

  32. Stacked structure of self-organized cubic InN nano-dots grown by molecular beam epitaxy

    Article • physica status solidi c, September 2013, Wiley

    Prof. Yasuto YH Hijikata, Professor Hiroyuki Yaguchi

  33. Molecular beam epitaxy of ErGaAs alloys on GaAs (001) substrates

    Article • Journal of Crystal Growth, September 2013, Elsevier

    Prof. Yasuto YH Hijikata, Professor Hiroyuki Yaguchi

  34. RF-MBE growth of cubic InN nano-scale dots on cubic GaN

    Article • Journal of Crystal Growth, September 2013, Elsevier

    Prof. Yasuto YH Hijikata, Professor Hiroyuki Yaguchi

  35. Direct Evidence of Carrier Excitation from Intermediate Band States in GaPN by Two-Wavelength Excited Photoluminescence

    Article • Applied Physics Express, September 2013, Institute of Physics Publishing

    Professor Hiroyuki Yaguchi

  36. RF-MBE growth of cubic AlN on MgO (001) substrates via 2-step c-GaN buffer layer

    Article • Journal of Crystal Growth, September 2013, Elsevier

    Professor Hiroyuki Yaguchi

  37. Observation of optical spin injection into Ge-based structures at room temperature

    Article • Frontiers in Human Neuroscience, June 2013, American Institute of Physics

    Professor Hiroyuki Yaguchi

  38. Optical absorption by E+ miniband of GaAs:N δ-doped superlattices

    Article • June 2013, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Yasuto YH Hijikata, Professor Hiroyuki Yaguchi

  39. OPTICAL PROPERTIES AND CARRIER DYNAMICS IN ASYMMETRIC COUPLED InGaN MULTIPLE QUANTUM WELLS

    Article • Functional Materials Letters, April 2013, World Scientific Pub Co Pte Lt

    Professor Hiroyuki Yaguchi

  40. Biexciton emission from single isoelectronic traps formed by nitrogen-nitrogen pairs in GaAs

    Article • January 2013, American Institute of Physics

    Prof. Yasuto YH Hijikata, Professor Hiroyuki Yaguchi

  41. Model Calculations of SiC Oxide Growth Rates at Sub-Atmospheric Pressures Using the Si and C Emission Model

    Article • Materials Science Forum, January 2013, Trans Tech Publications

    Prof. Yasuto YH Hijikata, Professor Hiroyuki Yaguchi

  42. TEM Analysis of Structural Phase Transition in MBE Grown Cubic InN on MgO (001) by MBE: Effect of Hexagonal Phase Inclusion in an C-Gan Nucleation Layer

    Article • Applied Mechanics and Materials, November 2012, Trans Tech Publications

    Professor Hiroyuki Yaguchi

  43. Biexciton Luminescence from Individual Isoelectronic Traps in Nitrogen $\delta$-Doped GaAs

    Article • Applied Physics Express, October 2012, Institute of Physics Publishing

    Prof. Yasuto YH Hijikata, Professor Hiroyuki Yaguchi

  44. Nondestructive and Contactless Characterization Method for Spatial Mapping of the Thickness and Electrical Properties in Homo-Epitaxially Grown SiC Epilayers Using Infrared Reflectance Spectroscopy

    Article • October 2012, IntechOpen

    Prof. Yasuto YH Hijikata, Professor Hiroyuki Yaguchi

  45. Thermal Oxidation Mechanism of Silicon Carbide

    Article • October 2012, IntechOpen

    Prof. Yasuto YH Hijikata, Professor Hiroyuki Yaguchi

  46. Oxygen partial pressure dependence of the SiC oxidation process studied by in-situ spectroscopic ellipsometry

    Article • Journal of Applied Physics, July 2012, American Institute of Physics

    Prof. Yasuto YH Hijikata, Professor Hiroyuki Yaguchi

  47. Analysis of the energy structure of nitrogen δ-doped GaAs superlattices for high efficiency intermediate band solar cells

    Article • June 2012, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Yasuto YH Hijikata, Professor Hiroyuki Yaguchi

  48. Micro-Photoluminescence Study on the Influence of Oxidation on Stacking Faults in 4H-SiC Epilayers

    Article • Applied Physics Express, May 2012, Institute of Physics Publishing

    Prof. Yasuto YH Hijikata, Professor Hiroyuki Yaguchi

  49. RF-MBE growth of semipolar InN(10-13) and InGaN(10-13) on GaAs(110)

    Article • physica status solidi c, February 2012, Wiley

    Prof. Yasuto YH Hijikata, Professor Hiroyuki Yaguchi

  50. Single Photon Generation from Nitrogen Atomic-Layer Doped Gallium Arsenide

    Article • Materials Science Forum, January 2012, Trans Tech Publications

    Prof. Yasuto YH Hijikata, Professor Hiroyuki Yaguchi

  51. Influence of off-cut angle of (0001) 4H-SiC on the crystal quality of InN grown by RF-MBE

    Article • Procedia Engineering, January 2012, Elsevier

    Professor Hiroyuki Yaguchi

  52. Quantum well double barrier resonant tunneling structures for selective contacts of hot carrier solar cells

    Article • June 2011, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Yasuto YH Hijikata, Professor Hiroyuki Yaguchi

  53. Growth Rate Enhancement of Silicon-Carbide Oxidation in Thin Oxide Regime

    Article • April 2011, IntechOpen

    Prof. Yasuto YH Hijikata, Professor Hiroyuki Yaguchi

  54. Theoretical Studies for Si and C Emission into SiC Layer during Oxidation

    Article • Materials Science Forum, March 2011, Trans Tech Publications

    Prof. Yasuto YH Hijikata, Professor Hiroyuki Yaguchi

  55. Single photon emission from nitrogen delta-doped semiconductors

    Article • January 2011, SPIE

    Professor Hiroyuki Yaguchi

  56. High Cubic-Phase Purity InN on MgO (001) Using Cubic-Phase GaN as a Buffer Layer

    Article • January 2011, American Institute of Physics

    Prof. Yasuto YH Hijikata, Professor Hiroyuki Yaguchi

  57. Photoluminescence from single isoelectronic traps in nitrogen delta-doped GaAs grown on GaAs(111)A

    Article • Physica E Low-dimensional Systems and Nanostructures, September 2010, Elsevier

    Prof. Yasuto YH Hijikata, Professor Hiroyuki Yaguchi

  58. RF-MBE growth of InN on 4H-SiC (0001) with off-angles

    Article • physica status solidi c, May 2010, Wiley

    Prof. Yasuto YH Hijikata, Yuuki Ishida, Professor Hiroyuki Yaguchi

  59. In Situ Spectroscopic Ellipsometry Study of SiC Oxidation at Low Oxygen-Partial-Pressures

    Article • Materials Science Forum, April 2010, Trans Tech Publications

    Prof. Yasuto YH Hijikata, Professor Hiroyuki Yaguchi

  60. Model Calculations of SiC Oxide Growth Rate at Various Oxidation Temperatures Based on the Silicon and Carbon Emission Model

    Article • Materials Science Forum, April 2010, Trans Tech Publications

    Prof. Yasuto YH Hijikata, Professor Hiroyuki Yaguchi

  61. Optical and electrical characterizations of 4H-SiC–oxide interfaces by spectroscopic ellipsometry and capacitance–voltage measurements

    Article • Applied Surface Science, July 2009, Elsevier

    Prof. Yasuto YH Hijikata, Professor Hiroyuki Yaguchi

  62. Model Calculation of SiC Oxide Growth Rate Based on the Silicon and Carbon Emission Model

    Article • Materials Science Forum, March 2009, Trans Tech Publications

    Prof. Yasuto YH Hijikata, Professor Hiroyuki Yaguchi

  63. Observation of SiC Oxidation in Ultra-Thin Oxide Regime by In Situ Spectroscopic Ellipsometry

    Article • Materials Science Forum, March 2009, Trans Tech Publications

    Prof. Yasuto YH Hijikata, Professor Hiroyuki Yaguchi

  64. Characterization of 4H-SiC–SiO2 Interfaces by a Deep Ultraviolet Spectroscopic Ellipsometer

    Article • Materials Science Forum, March 2009, Trans Tech Publications

    Professor Hiroyuki Yaguchi

  65. A Kinetic Model of Silicon Carbide Oxidation Based on the Interfacial Silicon and Carbon Emission Phenomenon

    Article • Applied Physics Express, February 2009, Institute of Physics Publishing

    Prof. Yasuto YH Hijikata, Professor Hiroyuki Yaguchi

  66. Oxide Growth Rate Enhancement of Silicon Carbide (0001) Si-Faces in Thin Oxide Regime

    Article • Japanese Journal of Applied Physics, October 2008, Japan Society of Applied Physics

    Prof. Yasuto YH Hijikata, Professor Hiroyuki Yaguchi

  67. Model Calculation of SiC Oxidation Rates in the Thin Oxide Regime

    Article • Materials Science Forum, September 2008, Trans Tech Publications

    Professor Hiroyuki Yaguchi

  68. Oxygen-Partial-Pressure Dependence of SiC Oxidation Rate Studied by In Situ Spectroscopic Ellipsometry

    Article • Materials Science Forum, September 2008, Trans Tech Publications

    Professor Hiroyuki Yaguchi

  69. High Resolution X-Ray Diffraction and Raman Scattering Studies of Cubic-Phase InN Films Grown by MBE

    Article • Advanced Materials Research, August 2008, Trans Tech Publications

    Professor Hiroyuki Yaguchi

  70. Improvement of the surface morphology ofa -plane InN using low-temperature InN buffer layers

    Article • physica status solidi c, May 2008, Wiley

    Prof. Yasuto YH Hijikata, Professor Hiroyuki Yaguchi

  71. Photoluminescence of cubic InN films on MgO (001) substrates

    Article • physica status solidi c, May 2008, Wiley

    Prof. Yasuto YH Hijikata, Professor Hiroyuki Yaguchi

  72. Photoluminescence study of hexagonal InN/InGaN quantum well structures grown on 3C-SiC (001) substrates by molecular beam epitaxy

    Article • physica status solidi c, May 2008, Wiley

    Prof. Yasuto YH Hijikata, Professor Hiroyuki Yaguchi

  73. Twin photoluminescence peaks from single isoelectronic traps in nitrogen δ-doped GaAs

    Article • Physica E Low-dimensional Systems and Nanostructures, April 2008, Elsevier

    Prof. Yasuto YH Hijikata, Professor Hiroyuki Yaguchi

  74. Simultaneous Determination of the Carrier Concentration, Mobility and Thickness of SiC Homo-Epilayers Using Terahertz Reflectance Spectroscopy

    Article • Materials Science Forum, September 2007, Trans Tech Publications

    Professor Hiroyuki Yaguchi

  75. Growth Rate Enhancement of (000\bar1)-Face Silicon–Carbide Oxidation in Thin Oxide Regime

    Article • Japanese Journal of Applied Physics, August 2007, Japan Society of Applied Physics

    Prof. Yasuto YH Hijikata, Professor Hiroyuki Yaguchi

  76. Modulation spectroscopic investigation on lattice polarity of gallium nitride

    Article • Frontiers in Human Neuroscience, August 2007, American Institute of Physics

    Professor Hiroyuki Yaguchi

  77. Photoluminescence study of isoelectronic traps in dilute GaAsN alloys

    Article • physica status solidi c, June 2007, Wiley

    Prof. Yasuto YH Hijikata, Professor Hiroyuki Yaguchi

  78. Structural and optical characterization of high In content cubic InGaN on GaAs(001) substrates by RF-MBE

    Article • physica status solidi c, June 2007, Wiley

    Professor Hiroyuki Yaguchi

  79. RF-MBE growth of InN/InGaN quantum well structures on 3C–SiC substrates

    Article • Journal of Crystal Growth, April 2007, Elsevier

    Prof. Yasuto YH Hijikata, Professor Hiroyuki Yaguchi

  80. RF-MBE growth of a-plane InN on r-plane sapphire with a GaN underlayer

    Article • Journal of Crystal Growth, April 2007, Elsevier

    Prof. Yasuto YH Hijikata, Professor Hiroyuki Yaguchi

  81. Micro-Raman study on the improvement of luminescence efficiency of GaAsN alloys

    Article • Journal of Crystal Growth, January 2007, Elsevier

    Prof. Yasuto YH Hijikata, Professor Hiroyuki Yaguchi

  82. Micro-photoluminescence study of nitrogen delta-doped GaAs grown by metalorganic vapor phase epitaxy

    Article • Journal of Crystal Growth, January 2007, Elsevier

    Prof. Yasuto YH Hijikata, Professor Hiroyuki Yaguchi

  83. Simultaneous Determination of Carrier Concentration, Mobility, and Thickness of SiC Homoepilayers by Infrared Reflectance Spectroscopy

    Article • Japanese Journal of Applied Physics, November 2006, Japan Society of Applied Physics

    Prof. Yasuto YH Hijikata, Professor Hiroyuki Yaguchi

  84. Off-Angle Dependence of Characteristics of 4H-SiC-Oxide Interfaces

    Article • Materials Science Forum, October 2006, Trans Tech Publications

    Professor Hiroyuki Yaguchi

  85. Real Time Observation of SiC Oxidation Using an In Situ Ellipsometer

    Article • Materials Science Forum, October 2006, Trans Tech Publications

    Professor Hiroyuki Yaguchi

  86. Characterization of oxide films on 4H-SiC epitaxial (0001¯) faces by high-energy-resolution photoemission spectroscopy: Comparison between wet and dry oxidation

    Article • Journal of Applied Physics, September 2006, American Institute of Physics

    Prof. Yasuto YH Hijikata, Professor Hiroyuki Yaguchi

  87. Photo-induced improvement of radiative efficiency and structural changes in GaAsN alloys

    Article • physica status solidi c, June 2006, Wiley

    Prof. Yasuto YH Hijikata, Professor Hiroyuki Yaguchi

  88. RF-MBE growth of cubic InN films on MgO (001) substrates

    Article • physica status solidi c, June 2006, Wiley

    Prof. Yasuto YH Hijikata, Professor Hiroyuki Yaguchi

  89. Characterization of Oxide Films on SiC Epitaxial (000-1) Faces by Angle-Resolved Photoemission Spectroscopy Measurements Using Synchrotron Radiation

    Article • May 2005, CrossRef Test Account

    Professor Hiroyuki Yaguchi

  90. Growth of high-quality hexagonal InN on 3C-SiC (001) by molecular beam epitaxy

    Article • physica status solidi c, May 2005, Wiley

    Prof. Yasuto YH Hijikata, Professor Hiroyuki Yaguchi

  91. Characterization of Oxide Films on SiC Epitaxial (000-1) Faces by Angle-Resolved Photoemission Spectroscopy Measurements Using Synchrotron Radiation

    Article • Materials Science Forum, May 2005, Trans Tech Publications

    Professor Hiroyuki Yaguchi

  92. Effect of Ar post-oxidation annealing on oxide–4H-SiC interfaces studied by capacitance to voltage measurements and photoemission spectroscopy

    Article • Journal of Vacuum Science & Technology A Vacuum Surfaces and Films, March 2005, American Vacuum Society

    Prof. Yasuto YH Hijikata, Yuuki Ishida, Professor Hiroyuki Yaguchi

  93. Epitaxial growth of hexagonal and cubic InN films

    Article • physica status solidi (b), October 2004, Wiley

    Prof. Yasuto YH Hijikata, Professor Hiroyuki Yaguchi

  94. Characterization of Carrier Concentration and Mobility in n-type SiC Wafers Using Infrared Reflectance Spectroscopy

    Article • Japanese Journal of Applied Physics, August 2004, Japan Society of Applied Physics

    Prof. Yasuto YH Hijikata, Professor Hiroyuki Yaguchi

  95. Photoemission Spectroscopic Studies on Oxide/SiC Interfaces Formed by Dry and Pyrogenic Oxidation

    Article • Materials Science Forum, June 2004, Trans Tech Publications

    Yuuki Ishida, Professor Hiroyuki Yaguchi

  96. Improvement in the luminescence efficiency of GaAsN alloys by photoexcitation

    Article • physica status solidi c, December 2003, Wiley

    Prof. Yasuto YH Hijikata, Professor Hiroyuki Yaguchi

  97. Spectroscopic ellipsometry study on the dielectric functions of GaPN alloys

    Article • physica status solidi c, December 2003, Wiley

    Prof. Yasuto YH Hijikata, Professor Hiroyuki Yaguchi

  98. Characterization of the Interfaces between SiC and Oxide Films by Spectroscopic Ellipsometry

    Article • Materials Science Forum, April 2002, Trans Tech Publications

    Prof. Yasuto YH Hijikata, Yuuki Ishida, Professor Hiroyuki Yaguchi

  99. X-Ray Photoelectron Spectroscopy Studies of Post-Oxidation Process Effects on Oxide/SiC Interfaces

    Article • Materials Science Forum, April 2002, Trans Tech Publications

    Prof. Yasuto YH Hijikata, Professor Hiroyuki Yaguchi

  100. Spatial Mapping of the Carrier Concentration and Mobility in SiC Wafers by Micro Fourier-Transform Infrared Spectroscopy

    Article • Materials Science Forum, April 2002, Trans Tech Publications

    Professor Hiroyuki Yaguchi

  101. Measurements of the Depth Profile of the Refractive Indices in Oxide Films on SiC by Spectroscopic Ellipsometry

    Article • Japanese Journal of Applied Physics, February 2002, Japan Society of Applied Physics

    Prof. Yasuto YH Hijikata, Yuuki Ishida, Professor Hiroyuki Yaguchi

  102. Control of Macroscopic Absorption Coefficient of Multicrystalline SiGe by Microscopic Compositional Distribution

    Article • Japanese Journal of Applied Physics, January 2002, Institute of Physics Publishing

    Professor Hiroyuki Yaguchi

  103. Composition analysis of SiO2/SiC interfaces by electron spectroscopic measurements using slope-shaped oxide films

    Article • Applied Surface Science, December 2001, Elsevier

    Prof. Yasuto YH Hijikata, Professor Hiroyuki Yaguchi

  104. Photoluminescence Study on Temperature Dependence of Band Gap Energy of GaAsN Alloys

    Article • physica status solidi (b), November 2001, Wiley

    Prof. Yasuto YH Hijikata, Professor Hiroyuki Yaguchi

  105. Spectroscopic Ellipsometry Study on the Electronic Structure near the Absorption Edge of GaAsN Alloys

    Article • physica status solidi (b), November 2001, Wiley

    Prof. Yasuto YH Hijikata, Professor Hiroyuki Yaguchi

  106. Temperature Dependence of Excitonic Γc–ΓvTransition Energies of GaxIn1-xP Crystals

    Article • Japanese Journal of Applied Physics, March 2001, Institute of Physics Publishing

    Professor Hiroyuki Yaguchi

  107. Optical characterization of metalorganic vapor-phase epitaxy-grown GaAs1−xNx alloys using spectroscopic ellipsometry

    Article • Journal of Crystal Growth, December 2000, Elsevier

    Professor Hiroyuki Yaguchi

  108. Characterization of Oxide Films on SiC by Spectroscopic Ellipsometry

    Article • Japanese Journal of Applied Physics, October 2000, Japan Society of Applied Physics

    Prof. Yasuto YH Hijikata, Yuuki Ishida, Professor Hiroyuki Yaguchi

  109. Optical Constants of Cubic GaN, AlN, and AlGaN Alloys

    Article • Japanese Journal of Applied Physics, June 2000, Japan Society of Applied Physics

    Yuuki Ishida, Professor Hiroyuki Yaguchi

  110. Fabrication and optical properties of GaAs/AlGaAs quantum dot grown in tetrahedral-shaped recesses on GaAs B substrates by MOVPE

    Article • Physica E Low-dimensional Systems and Nanostructures, May 2000, Elsevier

    Professor Hiroyuki Yaguchi

  111. Second-Harmonic Generation from GaP/AlP Multilayers on GaP (111) Substrates Based on Quasi-Phase Matching for the Fundamental Standing Wave

    Article • Japanese Journal of Applied Physics, April 2000, Institute of Physics Publishing

    Professor Hiroyuki Yaguchi

  112. Optical Characterization of Cubic AlGaN Epilayers by Cathodoluminescence and Spectroscopic Ellipsometry

    Article • physica status solidi (b), November 1999, Wiley

    Yuuki Ishida, Professor Hiroyuki Yaguchi

  113. Quantum Size Effect of Lead Iodide Nanoparticles Formed by a Langmuir-Blodgett Technique

    Article • Molecular Crystals and Liquid Crystals Science and Technology Section A Molecular Crystals and Liquid Crystals, November 1999, Taylor & Francis

    Professor Hiroyuki Yaguchi

  114. Stimulated emission from optically pumped cubic GaN/AlGaN double heterostructures

    Article • Journal of Crystal Growth, February 1999, Elsevier

    Professor Hiroyuki Yaguchi

  115. High-Temperature Metalorganic Vapor Phase Epitaxial Growth of GaAs/AlGaAs Quantum Structures in Tetrahedral-Shaped Recesses on GaAs (111)B Substrates

    Article • Japanese Journal of Applied Physics, January 1999, Institute of Physics Publishing

    Professor Hiroyuki Yaguchi

  116. Arsenic Surfactant and Incorporation Effects on Cubic GaN Grown by Metalorganic Vapor Phase Epitaxy

    Article • January 1999, Japan Society of Applied Physics

    Professor Hiroyuki Yaguchi

  117. Sublattice Reversal in GaAs/Si/GaAs (100) Heterostructures by Molecular Beam Epitaxy

    Article • Japanese Journal of Applied Physics, December 1998, Institute of Physics Publishing

    Professor Hiroyuki Yaguchi

  118. Micro Raman and micro photoluminescence study of cubic GaN grown on 3C-SiC(001) substrates by metalorganic vapor phase epitaxy

    Article • Journal of Crystal Growth, December 1998, Elsevier

    Professor Hiroyuki Yaguchi

  119. Photoluminescence and photoluminescence-excitation spectroscopy of GaPAsN/GaP lattice-matched multiple quantum well structures

    Article • Journal of Crystal Growth, December 1998, Elsevier

    Professor Hiroyuki Yaguchi

  120. Cleaved cavity stimulated emission from an optically pumped cubic GaN/AlGaN heterostructure grown on GaAs (100) substrate

    Article • Frontiers in Human Neuroscience, October 1998, American Institute of Physics

    Professor Hiroyuki Yaguchi

  121. Polarization Characteristics of Crescent-Shaped Tensile-Strained GaAsP/AlGaAs Quantum Wire-Like Lasers

    Article • Japanese Journal of Applied Physics, July 1998, Institute of Physics Publishing

    Professor Hiroyuki Yaguchi

  122. Metalorganic vapor phase epitaxy growth and photoluminescence properties of cubic AlxGa1−xN

    Article • Frontiers in Human Neuroscience, July 1998, American Institute of Physics

    Professor Hiroyuki Yaguchi

  123. Metalorganic vapor-phase epitaxy of GaP1−x−yAsyNx quaternary alloys on GaP

    Article • Journal of Crystal Growth, June 1998, Elsevier

    Professor Hiroyuki Yaguchi

  124. Fabrication of Pb(Zr,Ti)O3/MgO/GaN/GaAs structure for optoelectronic device applications

    Article • Journal of Crystal Growth, June 1998, Elsevier

    Professor Hiroyuki Yaguchi

  125. Investigation of luminescence properties of GaN single crystals grown on 3C-SiC substrates

    Article • Journal of Crystal Growth, June 1998, Elsevier

    Professor Hiroyuki Yaguchi

  126. Optical transitions in cubic GaN grown on GaAs(100) substrates by metalorganic vapor-phase epitaxy

    Article • Journal of Crystal Growth, June 1998, Elsevier

    Professor Hiroyuki Yaguchi

  127. Temperature dependence of photoluminescence of GaP1−xNx alloys

    Article • Journal of Crystal Growth, June 1998, Elsevier

    Professor Hiroyuki Yaguchi

  128. Theoretical study of conduction band edge formation in GaP1−xNx alloys using a tight-binding approximation

    Article • Journal of Crystal Growth, June 1998, Elsevier

    Professor Hiroyuki Yaguchi

  129. Characterization of SiGe strained heterostructures grown by molecular beam epitaxy using a Si effusion cell

    Article • Thin Solid Films, May 1998, Elsevier

    Professor Hiroyuki Yaguchi

  130. GaAs/AlGaAs Quantum Structures Grown in Tetrahedral-Shaped Recesses on GaAs (111)B Substrates by Metalorganic Vapor Phase Epitaxy

    Article • Japanese Journal of Applied Physics, March 1998, Institute of Physics Publishing

    Professor Hiroyuki Yaguchi

  131. Metalorganic Vapor Phase Epitaxy Growth of High Quality Cubic GaN on GaAs (100) Substrates

    Article • Japanese Journal of Applied Physics, March 1998, Institute of Physics Publishing

    Professor Hiroyuki Yaguchi

  132. Polarization Characteristics of Crescent-Shaped Tensile-Strained GaAsP/AlGaAs Quantum Wire-Like Lasers

    Article • Japanese Journal of Applied Physics, March 1998, Institute of Physics Publishing

    Professor Hiroyuki Yaguchi

  133. A new approach to ZnCdSe quantum dots

    Article • Materials Science and Engineering B, February 1998, Elsevier

    Professor Hiroyuki Yaguchi

  134. Exciton diffusion dynamics in quantum nanostructures on V-groove patterned substrates

    Article • Superlattices and Microstructures, February 1998, Elsevier

    Professor Hiroyuki Yaguchi

  135. Molecular beam epitaxy of SiGe heterostructures using a newly designed Si effusion cell

    Article • Materials Science and Engineering B, February 1998, Elsevier

    Professor Hiroyuki Yaguchi

  136. Self-assembled, very long II–VI semiconductor quantum wires

    Article • Materials Science and Engineering B, February 1998, Elsevier

    Professor Hiroyuki Yaguchi

  137. Growth Mechanism in the Metalorganic Vapor Phase Epitaxy of MetastableGaP1-xNxAlloys: A Growth Interruption Study

    Article • Japanese Journal of Applied Physics, December 1997, Institute of Physics Publishing

    Professor Hiroyuki Yaguchi

  138. Erratum: “The optical process in AlInP/GaInP/AlInP quantum wells” [J. Appl. Phys. 80, 4592 (1996)]

    Article • Journal of Applied Physics, December 1997, American Institute of Physics

    Professor Hiroyuki Yaguchi

  139. Self Formation and Optical Properties of II-VI Semiconductor Wire Structures

    Article • Japanese Journal of Applied Physics, November 1997, Institute of Physics Publishing

    Professor Hiroyuki Yaguchi

  140. The Γc–ΓvTransition Energies ofAlxIn1-xPAlloys

    Article • Japanese Journal of Applied Physics, November 1997, Institute of Physics Publishing

    Professor Hiroyuki Yaguchi

  141. Photoluminescence properties of cubic GaN grown on GaAs(100) substrates by metalorganic vapor phase epitaxy

    Article • Frontiers in Human Neuroscience, October 1997, American Institute of Physics

    Professor Hiroyuki Yaguchi

  142. Electronic structure of strained-layer quantum wells

    Article • Surface Science, October 1997, Elsevier

    Professor Hiroyuki Yaguchi

  143. Crystal Structure of GaN Grown on 3C-SiC Substrates by Metalorganic Vapor Phase Epitaxy

    Article • Japanese Journal of Applied Physics, July 1997, Institute of Physics Publishing

    Professor Hiroyuki Yaguchi

  144. Metalorganic Vapor Phase Eitaxy Growth Features of AlGaAs in Tetrahedral-Shaped Recesses on GaAs (111)B Substrates

    Article • Japanese Journal of Applied Physics, June 1997, Institute of Physics Publishing

    Professor Hiroyuki Yaguchi

  145. Naturally formed ZnCdSe quantum dots on ZnSe (110) surfaces

    Article • Frontiers in Human Neuroscience, May 1997, American Institute of Physics

    Professor Hiroyuki Yaguchi

  146. Nitrogen concentration dependence of photoluminescence decay time in GaP1−xNx alloys

    Article • Solid-State Electronics, February 1997, Elsevier

    Professor Hiroyuki Yaguchi

  147. MOVPE Growth of GaPAsN Quaternary Alloys Lattice-Matched to GaP

    Article • MRS Proceedings, January 1997, Cambridge University Press

    Professor Hiroyuki Yaguchi

  148. A highly luminescent crescent-shaped tensile-strained quantum wire laser structure

    Article • Journal of Crystal Growth, January 1997, Elsevier

    Professor Hiroyuki Yaguchi

  149. High Quality Cubic GaN Growth on GaAs (100) Substrates by Metalorganic Vapor Phase Epitaxy

    Article • January 1997, Japan Society of Applied Physics

    Professor Hiroyuki Yaguchi

  150. Photoluminescence excitation spectroscopy of GaP1−N alloys: conduction-band-edge formation by nitrogen incorporation

    Article • Journal of Crystal Growth, January 1997, Elsevier

    Professor Hiroyuki Yaguchi

  151. Polarization Characteristics of Crescent-Shaped Tensile-Strained GaAsP/AlGaAs Quantum Wire Lasers

    Article • January 1997, Japan Society of Applied Physics

    Professor Hiroyuki Yaguchi

  152. The optical processes in AlInP/GaInP/AlInP quantum wells

    Article • Journal of Applied Physics, October 1996, American Institute of Physics

    Professor Hiroyuki Yaguchi

  153. Anomalous optical absorption in ZnCdSe/ZnSe single quantum wells

    Article • Solid State Communications, September 1996, Elsevier

    Professor Hiroyuki Yaguchi

  154. Characterization of modulation-doped n-AlxGa1-xAs/GaAs heterostructure using spectroscopic ellipsometry and photoreflectance

    Article • August 1996, SPIE

    Professor Hiroyuki Yaguchi

  155. Characterization of Si delta-doped GaAs using photoellipsometry and photoreflectance

    Article • August 1996, SPIE

    Professor Hiroyuki Yaguchi

  156. Time‐resolved photoluminescence study on AlxGa1−xAs spontaneous vertical quantum well structures

    Article • Frontiers in Human Neuroscience, June 1996, American Institute of Physics

    Professor Hiroyuki Yaguchi

  157. Rectangular AlGaAs/AlAs Quantum Wires Using Spontaneous Vertical Quantum Wells

    Article • Japanese Journal of Applied Physics, February 1996, Institute of Physics Publishing

    Professor Hiroyuki Yaguchi

  158. Built-in Electric Field Strength in InP/n+-InP Determined by Photoellipsometry and Photoreflectance

    Article • January 1996, Japan Society of Applied Physics

    Professor Hiroyuki Yaguchi

  159. Growth temperature dependence of AlGaAs spontaneous vertical quantum wells on V-grooved substrates by low-pressure metalorganic vapor phase epitaxy

    Article • Journal of Crystal Growth, January 1996, Elsevier

    Professor Hiroyuki Yaguchi

  160. Tensile‐strained GaAsP/AlGaAs quantum wells grown by low‐pressure metalorganic vapor phase epitaxy

    Article • Journal of Applied Physics, September 1995, American Institute of Physics

    Professor Hiroyuki Yaguchi

  161. Composition profile of an AlGaAs epilayer on a V‐grooved substrate grown by low‐pressure metalorganic vapor phase epitaxy

    Article • Frontiers in Human Neuroscience, August 1995, American Institute of Physics

    Professor Hiroyuki Yaguchi

  162. Optical property of GaAsP/AlGaAs strained‐layer quantum well grown on GaAs‐(111)B substrate

    Article • Frontiers in Human Neuroscience, January 1995, American Institute of Physics

    Professor Hiroyuki Yaguchi

  163. The in Situ Growth of Lateral Confinement Enhanced Rectangular AlGaAs/AlAs Quantum Wires by Utilizing the Spontaneous Vertical Quantum Wells

    Article • January 1995, Japan Society of Applied Physics

    Professor Hiroyuki Yaguchi

  164. Effect of growth interruption on the interface flatness in metalorganic vapor phase epitaxy-grown GaAs/GaAsP heterostructures

    Article • Journal of Crystal Growth, December 1994, Elsevier

    Professor Hiroyuki Yaguchi

  165. Intermediate range between N-doped GaP and GaP1-xNx alloys: difference in optical properties

    Article • Journal of Crystal Growth, December 1994, Elsevier

    Professor Hiroyuki Yaguchi

  166. Metalorganic vapor phase epitaxial growth and luminescence properties of GaAs/GaAsP quantum wires

    Article • Journal of Crystal Growth, December 1994, Elsevier

    Professor Hiroyuki Yaguchi

  167. Surface orientation dependence of growth rate of cubic GaN

    Article • Journal of Crystal Growth, December 1994, Elsevier

    Professor Hiroyuki Yaguchi

  168. Temperature dependence of photoluminescence linewidth in GaAs/GaAsP strained-layer quantum well structures

    Article • Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena, July 1994, American Vacuum Society

    Professor Hiroyuki Yaguchi

  169. Formation of Cubic GaN on (111)B GaAs by Metal-Organic Vapor-Phase Epitaxy with Dimethylhydrazine

    Article • Japanese Journal of Applied Physics, June 1994, Institute of Physics Publishing

    Professor Hiroyuki Yaguchi

  170. Photoreflectance Study of Interface Roughness in Ge/SiGe Strained-Layer Heterostructures

    Article • Japanese Journal of Applied Physics, April 1994, Institute of Physics Publishing

    Professor Hiroyuki Yaguchi

  171. Valence-subband level crossing in GaAs/GaAsP strained-barrier quantum well structures observed by circularly polarized photoluminescence excitation spectroscopy

    Article • Solid-State Electronics, April 1994, Elsevier

    Professor Hiroyuki Yaguchi

  172. Photoluminescence study of (111)‐oriented GaAs/GaAsP strained‐layer quantum well structure

    Article • Frontiers in Human Neuroscience, March 1994, American Institute of Physics

    Professor Hiroyuki Yaguchi

  173. Characterization of Ge/SiGe strained-barrier quantum-well structures using photoreflectance spectroscopy

    Article • March 1994, American Physical Society (APS)

    Professor Hiroyuki Yaguchi

  174. Selective Growth of Cubic GaN in Small Areas on Patterned GaAs(100) Substrates by Metalorganic Vapor Phase Epitaxy

    Article • Japanese Journal of Applied Physics, January 1994, Institute of Physics Publishing

    Professor Hiroyuki Yaguchi

  175. Transmission Electron Microscope Observation of Cubic GaN Grown by Metalorganic Vapor Phase Epitaxy with Dimethylhydrazine on (001) GaAs

    Article • Japanese Journal of Applied Physics, January 1994, Institute of Physics Publishing

    Professor Hiroyuki Yaguchi

  176. Photoreflectance and Photoluminescence Study of Direct-and Indirect-Gap Band Lineups of GaAsP/GaP Strained Quantum Wells

    Article • January 1994, Japan Society of Applied Physics

    Professor Hiroyuki Yaguchi

  177. Metalorganic vapor phase epitaxy of GaP1−xNxalloys on GaP

    Article • Frontiers in Human Neuroscience, December 1993, American Institute of Physics

    Professor Hiroyuki Yaguchi

  178. Self-modulating Sb incorporation in Si/SiGe superlattices during molecular beam epitaxial growth

    Article • Surface Science, October 1993, Elsevier

    Professor Hiroyuki Yaguchi

  179. Observation of the valence‐subband level crossing in GaAs/GaAsP strained‐barrier quantum well structures using circularly polarized photoluminescence excitation spectroscopy

    Article • Frontiers in Human Neuroscience, August 1993, American Institute of Physics

    Professor Hiroyuki Yaguchi

  180. GaAsP Layers Grown on (111)-Oriented GaAs Substrates by Metalorganic Vapor Phase Epitaxy

    Article • Japanese Journal of Applied Physics, June 1993, Institute of Physics Publishing

    Professor Hiroyuki Yaguchi

  181. Metal-Organic Vapor Phase Epitaxy Growth and Optical Study of GaAs/GaAs1-xPxStrained-Barrier Single Quntum Well Structures

    Article • Japanese Journal of Applied Physics, March 1993, Institute of Physics Publishing

    Professor Hiroyuki Yaguchi

  182. Intersubband absorption in n-type Si⧸Si1−xGex multiple quantum well structures formed by Sb segregant-assisted growth

    Article • Journal of Crystal Growth, February 1993, Elsevier

    Professor Hiroyuki Yaguchi

  183. Is low temperature growth the solution to abrupt Si⧸Si1-xGex interface formation?

    Article • Journal of Crystal Growth, February 1993, Elsevier

    Professor Hiroyuki Yaguchi

  184. Photoreflectance Study of GaAs/GaAsP Strained-Barrier Quantum Well Structures

    Article • Japanese Journal of Applied Physics, January 1993, Institute of Physics Publishing

    Professor Hiroyuki Yaguchi

  185. Characterization of Interface Roughness in Ge/SiGe Heterostructures Using Photoreflectance Spectroscopy

    Article • January 1993, Japan Society of Applied Physics

    Professor Hiroyuki Yaguchi

  186. MOVPE Selective Growth of Cubic GaN in Small Areas on Patterned GaAs(100) Substrates

    Article • January 1993, Japan Society of Applied Physics

    Professor Hiroyuki Yaguchi

  187. Self-Modulating Incorporation of Sb in Si/SiGe Superlattices during Molecular Beam Epitaxial Growth

    Article • Materials Science Forum, January 1993, Trans Tech Publications

    Professor Hiroyuki Yaguchi

  188. MOVPE growth of cubic GaN on GaAs using dimethylhydrazine

    Article • Journal of Crystal Growth, November 1992, Elsevier

    Professor Hiroyuki Yaguchi

  189. Initial oxidation of MBE-grown Si( 100) surfaces

    Article • Surface Science, September 1992, Elsevier

    Professor Hiroyuki Yaguchi

  190. Intersubbband absorption in narrow Si/SiGe multiple quantum wells without interfacial smearing

    Article • Frontiers in Human Neuroscience, July 1992, American Institute of Physics

    Professor Hiroyuki Yaguchi

  191. Atomistic picture of interfacial mixing in the Si/Ge heterostructures

    Article • Surface Science, January 1992, Elsevier

    Professor Hiroyuki Yaguchi

  192. Photoreflectance Study of GaAs/GaAsP Strained-Barrier Quantum Well Structures

    Article • January 1992, Japan Society of Applied Physics

    Professor Hiroyuki Yaguchi

  193. Involvement of the topmost Ge layer in the Ge surface segregation during Si/Ge heterostructure formation

    Article • Frontiers in Human Neuroscience, October 1991, American Institute of Physics

    Professor Hiroyuki Yaguchi

  194. Self‐limitation in the surface segregation of Ge atoms during Si molecular beam epitaxial growth

    Article • Frontiers in Human Neuroscience, October 1991, American Institute of Physics

    Professor Hiroyuki Yaguchi

  195. Strain Relaxation in MBE-Grown Si1-xGex/Si(100) Heterostructures by Annealing

    Article • Japanese Journal of Applied Physics, August 1991, Institute of Physics Publishing

    Professor Hiroyuki Yaguchi

  196. Initial Oxidation of MBE-Grown Si Surfaces

    Article • MRS Proceedings, January 1991, Cambridge University Press

    Professor Hiroyuki Yaguchi

  197. Kinetics of Ge Segregation in the Presence of Sb During Molecular Beam Epitaxy

    Article • MRS Proceedings, January 1991, Cambridge University Press

    Professor Hiroyuki Yaguchi

  198. Suppression of Interfacial Mixing by Sb Deposition in Si/Ge Strained-Layer Superlattices

    Article • MRS Proceedings, January 1991, Cambridge University Press

    Professor Hiroyuki Yaguchi

  199. Realization of Abrupt Interfaces in Si/Ge Superlattices by Suppressing Ge Surface Segregation with Submonolayer of Sb

    Article • Japanese Journal of Applied Physics, November 1990, Institute of Physics Publishing

    Professor Hiroyuki Yaguchi

  200. Suppression of Interfacial Mixing in Si/Ge Superlattices by Sb Deposition

    Article • January 1990, Japan Society of Applied Physics

    Professor Hiroyuki Yaguchi

  201. RHEED study of superstructures of submonolayer lead films on silicon (111) surfaces

    Article • Applied Surface Science, September 1988, Elsevier

    Professor Hiroyuki Yaguchi

  202. RHEED study of Pb/Si(111) surface superstructures.

    Article • Shinku, January 1988, The Vacuum Society of Japan

    Professor Hiroyuki Yaguchi