What is it about?
The effect of variation of the number of highly strained InGaAs quantum wells embedded in GaAs layers on the crystal quality of the epitaxial layers and AlGaAs/GaAs laser diodes was investigated.
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Why is it important?
. Laser diodes processed from MQW structures allow a drastic reduction of the vertical far field due to the high internal efficiency and show very high output powers of 20 W from 200 µm aperture with no noticeable degradation during 10,000 h aging time at 5 W from 100 µm aperture.
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This page is a summary of: Laser diodes with highly strained InGaAs MQWs and very narrow vertical far fields, physica status solidi c, March 2006, Wiley,
DOI: 10.1002/pssc.200564120.
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