All Stories

  1. Spatial correlation of defect-selective etching and dark luminescence spots in Al x Ga1−x N

    Article • Semiconductor Science and Technology, June 2024, Institute of Physics Publishing

    Prof. Dr. Markus Weyers

  2. 226 nm Far‐Ultraviolet‐C Light Emitting Diodes with an Emission Power over 2 mW

    Article • physica status solidi (RRL) - Rapid Research Letters, May 2024, Wiley

    Prof. Dr. Markus Weyers

  3. Origin of the parasitic luminescence of 235 nm UVC LEDs grown on different AlN templates

    Article • Applied Physics Letters, February 2024, American Institute of Physics

    Prof. Dr. Markus Weyers

  4. Strain induced power enhancement of far-UVC LEDs on high temperature annealed AlN templates

    Article • Applied Physics Letters, January 2023, American Institute of Physics

    Prof. Dr. Markus Weyers

  5. The optimal threading dislocation density of AlN template for micrometer-thick Al0.63Ga0.37N heteroepitaxy

    Article • Journal of Crystal Growth, December 2022, Elsevier

    Prof. Dr. Markus Weyers

  6. Fingerprints of carbon defects in vibrational spectra of GaN considering the isotope effect

    Article • November 2022, American Physical Society (APS)

    Prof. Dr. Markus Weyers

  7. In situ control of indium incorporation in (AlGa)1−xInxP layers

    Article • Journal of Crystal Growth, July 2022, Elsevier

    Prof. Dr. Markus Weyers

  8. Enhanced light extraction efficiency of UV LEDs by encapsulation with UV-transparent silicone resin

    Article • Semiconductor Science and Technology, May 2022, Institute of Physics Publishing

    Prof. Dr. Markus Weyers

  9. Passively Q-switched microchip laser based picosecond light source in the visible-red to near-infrared band for semiconductor excitation

    Article • Optics Express, April 2022, Optical Society of America (OSA)

    Prof. Dr. Markus Weyers

  10. High-quality AlGaN epitaxy on lattice-engineerable AlN template for high-power UVC light-emitting diodes

    Article • Acta Materialia, March 2022, Elsevier

    Prof. Dr. Markus Weyers

  11. Molten Barium Hydroxide as Defect Selective Drop Etchant for Dislocation Analysis on Aluminum Nitride Layers

    Article • physica status solidi (a), February 2022, Wiley

    Prof. Dr. Markus Weyers

  12. Impact of Si doping on dislocation behavior in MOVPE-grown AlN on high-temperature annealed AlN buffer layers

    Article • Journal of Applied Physics, January 2022, American Institute of Physics

    Prof. Dr. Markus Weyers

  13. Impact of operation parameters on the degradation of 233 nm AlGaN-based far-UVC LEDs

    Article • Journal of Applied Physics, January 2022, American Institute of Physics

    Prof. Dr. Markus Weyers

  14. Comparative Study of Monolithic Integrated MMI-Coupler-Based Dual-Wavelength Lasers

    Article • IEEE Journal of Selected Topics in Quantum Electronics, January 2022, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr. Markus Weyers

  15. Role of oxygen diffusion in the dislocation reduction of epitaxial AlN on sapphire during high-temperature annealing

    Article • Journal of Applied Physics, November 2021, American Institute of Physics

    Prof. Dr. Markus Weyers

  16. Internally wavelength stabilized GaAs-based diode lasers with epitaxially-stacked multiple active regions and tunnel junctions for LiDAR applications

    Article • October 2021, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr. Markus Weyers

  17. 16.3 W Peak-Power Pulsed All-Diode Laser Based Multi-Wavelength Master-Oscillator Power-Amplifier System at 964 nm

    Article • Applied Sciences, September 2021, MDPI AG

    Prof. Dr. Markus Weyers

  18. Temperature Dependence of Dark Spot Diameters in GaN and AlGaN

    Article • physica status solidi (b), September 2021, Wiley

    Prof. Dr. Markus Weyers

  19. A carbon-doping related luminescence band in GaN revealed by below bandgap excitation

    Article • Journal of Applied Physics, August 2021, American Institute of Physics

    Prof. Dr. Markus Weyers

  20. High‐Temperature Annealing and Patterned AlN/Sapphire Interfaces

    Article • physica status solidi (b), July 2021, Wiley

    Prof. Dr. Markus Weyers

  21. Direct observation of resonant tunneling in heterostructure with a single quantum well

    Article • Applied Physics Letters, July 2021, American Institute of Physics

    Prof. Dr. Markus Weyers

  22. Skin tolerant inactivation of multiresistant pathogens using far-UVC LEDs

    Article • Scientific Reports, July 2021, Springer Science + Business Media

    Prof. Dr. Markus Weyers

  23. Advances towards deep-UV light emitting diode technologies

    Article • June 2021, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr. Markus Weyers

  24. 783 nm wavelength stabilized DBR tapered diode lasers with a 7 W output power

    Article • Applied Optics, June 2021, Optical Society of America (OSA)

    Prof. Dr. Markus Weyers

  25. Wedged Nd:YVO4 crystal for wavelength tuning of monolithic passively Q-switched picosecond microchip lasers

    Article • Optics Express, June 2021, Optical Society of America (OSA)

    Prof. Dr. Markus Weyers

  26. Comparison of Ultraviolet B Light‐Emitting Diodes with Single or Triple Quantum Wells

    Article • physica status solidi (a), May 2021, Wiley

    Prof. Dr. Markus Weyers

  27. Origin of defect luminescence in ultraviolet emitting AlGaN diode structures

    Article • Applied Physics Letters, May 2021, American Institute of Physics

    Martin Feneberg, Prof. Dr. Markus Weyers

  28. Novel 900 nm diode lasers with epitaxially stacked multiple active regions and tunnel junctions

    Article • Electronics Letters, April 2021, the Institution of Engineering and Technology (the IET)

    Prof. Dr. Markus Weyers

  29. Narrow spectral line-width 785 nm DBR tapered lasers with 7 W output power

    Article • March 2021, SPIE

    Prof. Dr. Markus Weyers

  30. Single mode 660 nm master-oscillator power-amplifier with 500 mW optical output power

    Article • March 2021, SPIE

    Prof. Dr. Markus Weyers

  31. Single-pass tapered semiconductor optical amplifiers and modules for efficient coherent beam combining

    Article • March 2021, SPIE

    Prof. Dr. Markus Weyers

  32. Spatial filtering of a six-wavelength DBR-RW laser in a MOPA system

    Article • Applied Optics, February 2021, Optical Society of America (OSA)

    Prof. Dr. Markus Weyers

  33. Reliability of UVC LEDs fabricated on AlN/sapphire templates with different threading dislocation densities

    Article • Applied Physics Letters, December 2020, American Institute of Physics

    Prof. Dr. Markus Weyers

  34. High-temperature annealing of AlN films grown on 4H–SiC

    Article • AIP Advances, December 2020, American Institute of Physics

    Prof. Dr. Markus Weyers

  35. Non-uniform longitudinal current density induced power saturation in GaAs-based high power diode lasers

    Article • Applied Physics Letters, November 2020, American Institute of Physics

    Prof. Dr. Markus Weyers

  36. High‐Temperature Annealing of AlGaN

    Article • physica status solidi (a), October 2020, Wiley

    Prof. Dr. Markus Weyers

  37. The 2020 UV emitter roadmap

    Article • Journal of Physics D Applied Physics, September 2020, Institute of Physics Publishing

    Carlo De Santi, Prof. Dr. Markus Weyers

  38. Improved Efficiency of Ultraviolet B Light‐Emitting Diodes with Optimized p‐Side

    Article • physica status solidi (a), September 2020, Wiley

    Prof. Dr. Markus Weyers

  39. Longitudinal Current Crowding as Power Limit in High Power 975 nm Diode Lasers

    Article • September 2020, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr. Markus Weyers

  40. Impact of High‐Temperature Annealing on Boron Containing AlN Layers Grown by Metal Organic Vapor Phase Epitaxy

    Article • physica status solidi (a), July 2020, Wiley

    Prof. Dr. Markus Weyers

  41. Bulk photovoltaic effect in carbon-doped gallium nitride revealed by anomalous surface photovoltage spectroscopy

    Article • June 2020, American Physical Society (APS)

    Prof. Dr. Markus Weyers

  42. Overcoming the excessive compressive strain in AlGaN epitaxy by introducing high Si-doping in AlN templates

    Article • Japanese Journal of Applied Physics, June 2020, Institute of Physics Publishing

    Prof. Dr. Markus Weyers

  43. Carbon doping of GaN: Proof of the formation of electrically active tri-carbon defects

    Article • Journal of Applied Physics, May 2020, American Institute of Physics

    Prof. Dr. Markus Weyers

  44. The Impact of AlN Templates on Strain Relaxation Mechanisms during the MOVPE Growth of UVB‐LED Structures

    Article • Crystal Research and Technology, May 2020, Wiley

    Prof. Dr. Markus Weyers

  45. Low-index quantum-barrier single-pass tapered semiconductor optical amplifiers for efficient coherent beam combining

    Article • Semiconductor Science and Technology, May 2020, Institute of Physics Publishing

    Prof. Dr. Markus Weyers

  46. Wavelength stabilized high pulse power 48 emitter laser bars for automotive light detection and ranging application

    Article • Semiconductor Science and Technology, May 2020, Institute of Physics Publishing

    Prof. Dr. Markus Weyers

  47. Optimization of the Epitaxial Growth of Undoped GaN Waveguides in GaN-Based Laser Diodes Evaluated by Photoluminescence

    Article • Journal of Electronic Materials, May 2020, Springer Science + Business Media

    Prof. Dr. Markus Weyers

  48. Structural and electrical properties of Pd/p-GaN contacts for GaN-based laser diodes

    Article • Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena, May 2020, American Vacuum Society

    Prof. Dr. Markus Weyers

  49. Temperature‐Dependent Charge Carrier Diffusion in [0001¯] Direction of GaN Determined by Luminescence Evaluation of Buried InGaN Quantum Wells

    Article • physica status solidi (b), April 2020, Wiley

    Prof. Dr. Markus Weyers

  50. Highly Efficient High-Brightness 970-nm Ridge Waveguide Lasers

    Article • IEEE Photonics Technology Letters, April 2020, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr. Markus Weyers

  51. Improved performance of UVC-LEDs by combination of high-temperature annealing and epitaxially laterally overgrown AlN/sapphire

    Article • Photonics Research, April 2020, Optical Society of America (OSA)

    Prof. Dr. Markus Weyers

  52. Structural and luminescence imaging and characterisation of semiconductors in the scanning electron microscope

    Article • Semiconductor Science and Technology, March 2020, Institute of Physics Publishing

    Prof. Dr. Markus Weyers

  53. Status and Prospects of AlN Templates on Sapphire for Ultraviolet Light‐Emitting Diodes

    Article • physica status solidi (a), March 2020, Wiley

    Prof. Dr. Markus Weyers

  54. Surface Bragg gratings for high brightness lasers

    Article • March 2020, SPIE

    Prof. Dr. Markus Weyers

  55. Designing sapphire surface patterns to promote AlGaN overgrowth in hydride vapor phase epitaxy

    Article • Semiconductor Science and Technology, February 2020, Institute of Physics Publishing

    Prof. Dr. Markus Weyers

  56. Continuous-wave operation of DFB laser diodes based on GaN using 10$^{\rm th}$th-order laterally coupled surface gratings

    Article • Optics Letters, February 2020, Optical Society of America (OSA)

    Prof. Dr. Markus Weyers

  57. AlN overgrowth of nano-pillar-patterned sapphire with different offcut angle by metalorganic vapor phase epitaxy

    Article • Journal of Crystal Growth, February 2020, Elsevier

    Prof. Dr. Markus Weyers

  58. Improving AlN Crystal Quality and Strain Management on Nanopatterned Sapphire Substrates by High‐Temperature Annealing for UVC Light‐Emitting Diodes

    Article • physica status solidi (a), January 2020, Wiley

    Prof. Dr. Markus Weyers

  59. Monolithic Master Oscillator Tilted Tapered Power Amplifier Emitting 9.5 W at 1060 nm

    Article • IEEE Photonics Technology Letters, January 2020, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr. Markus Weyers

  60. Enhanced wall plug efficiency of AlGaN-based deep-UV LEDs using Mo/Al as p-contact

    Article • IEEE Photonics Technology Letters, January 2020, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr. Markus Weyers

  61. Determination of Sapphire Off‐Cut and Its Influence on the Morphology and Local Defect Distribution in Epitaxially Laterally Overgrown AlN for Optically Pumped UVC Lasers

    Article • physica status solidi (a), December 2019, Wiley

    Prof. Dr. Markus Weyers

  62. Displacement Talbot lithography for nano-engineering of III-nitride materials

    Article • Microsystems & Nanoengineering, December 2019, Springer Science + Business Media

    Prof. Dr. Markus Weyers

  63. Determination of Sapphire Off‐Cut and Its Influence on the Morphology and Local Defect Distribution in Epitaxially Laterally Overgrown AlN for Optically Pumped UVC Lasers

    Article • physica status solidi (a), November 2019, Wiley

    Prof. Dr. Markus Weyers

  64. Broadband Semiconductor Light Sources Operating at 1060 nm Based on InAs:Sb/GaAs Submonolayer Quantum Dots

    Article • IEEE Journal of Selected Topics in Quantum Electronics, November 2019, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr. Markus Weyers

  65. Scanning electron microscopy as a flexible technique for investigating the properties of UV-emitting nitride semiconductor thin films

    Article • Photonics Research, October 2019, Optical Society of America (OSA)

    Prof. Dr. Markus Weyers

  66. Growth and Properties of Intentionally Carbon‐Doped GaN Layers

    Article • Crystal Research and Technology, October 2019, Wiley

    Prof. Dr. Markus Weyers

  67. Approaches for higher power in GaAs-based broad area diode lasers

    Article • October 2019, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr. Markus Weyers

  68. High pulse power wavelength stabilized 905 nm laser bars for automotive LiDAR

    Article • October 2019, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr. Markus Weyers

  69. High power broad-area lasers with buried implantation for current confinement

    Article • Semiconductor Science and Technology, September 2019, Institute of Physics Publishing

    Prof. Dr. Markus Weyers

  70. Influence of substrate off-cut angle on the performance of 310 nm light emitting diodes

    Article • Journal of Crystal Growth, September 2019, Elsevier

    Prof. Dr. Markus Weyers

  71. Extra half-plane shortening of dislocations as an origin of tensile strain in Si-doped (Al)GaN

    Article • Journal of Applied Physics, August 2019, American Institute of Physics

    Prof. Dr. Markus Weyers

  72. Current-induced degradation and lifetime prediction of 310  nm ultraviolet light-emitting diodes

    Article • Photonics Research, June 2019, Optical Society of America (OSA)

    Prof. Dr. Markus Weyers

  73. Continuous Wave THz Source Based on an Electrically Tunable Monolithic Two-Color Semiconductor Diode Laser

    Article • June 2019, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr. Markus Weyers

  74. Dual-Wavelength Y-Branch DBR-RW Diode Laser at 785 nm with Adjustable Spectral Distance from 0 up to 1.6 nm

    Article • June 2019, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr. Markus Weyers

  75. Efficient Narrow Stripe Ridge Waveguide Lasers for Single-Spatial Mode Operation up to 2.5 W

    Article • June 2019, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr. Markus Weyers

  76. Optimization of 808 nm DBR RW Laser Bars for Operation at Low Noise and High Reliability

    Article • June 2019, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr. Markus Weyers

  77. Polarisation-Resolved Investigations of the Pico- and Nanosecond Dynamics of Broad Area Distributed Bragg Reflector Lasers under Very High-Current Pulse Excitation

    Article • June 2019, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr. Markus Weyers

  78. Wavelength Stabilized 905 nm Diode Lasers in the 100 W Class for Automotive LiDAR

    Article • June 2019, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr. Markus Weyers

  79. Widely Tunable Watt-Level MOPA Systems Emitting at 976 nm

    Article • June 2019, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr. Markus Weyers

  80. Time-resolved photoluminescence from n-doped GaN/Al0.18Ga0.82N short-period superlattices probes carrier kinetics and long-term structural stability

    Article • Journal of Applied Physics, May 2019, American Institute of Physics

    Prof. Dr. Markus Weyers, Thomas Elsaesser, Jens W. Tomm

  81. MOVPE-grown AlGaN-based tunnel heterojunctions enabling fully transparent UVC LEDs

    Article • Photonics Research, April 2019, Optical Society of America (OSA)

    Prof. Dr. Markus Weyers

  82. High power UVB light emitting diodes with optimized n-AlGaN contact layers

    Article • Japanese Journal of Applied Physics, April 2019, Institute of Physics Publishing

    Prof. Dr. Markus Weyers

  83. Impact of intermediate high temperature annealing on the properties of AlN/sapphire templates grown by metalorganic vapor phase epitaxy

    Article • Japanese Journal of Applied Physics, April 2019, Institute of Physics Publishing

    Prof. Dr. Markus Weyers

  84. Degradation of (In)AlGaN-Based UVB LEDs and Migration of Hydrogen

    Article • IEEE Photonics Technology Letters, April 2019, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr. Markus Weyers

  85. Current spreading suppression by O- and Si-implantation in high power broad area diode lasers

    Article • March 2019, SPIE

    Prof. Dr. Markus Weyers

  86. High-power-class QCW red laser bars and stacks for pump and direct application

    Article • March 2019, SPIE

    Prof. Dr. Markus Weyers

  87. Highly reliable low noise pump sources for solid state lasers in laser communication terminals

    Article • March 2019, SPIE

    Prof. Dr. Markus Weyers

  88. AlN and AlN/Al2O3 seed layers from atomic layer deposition for epitaxial growth of AlN on sapphire

    Article • Journal of Vacuum Science & Technology A Vacuum Surfaces and Films, March 2019, American Vacuum Society

    Prof. Dr. Markus Weyers

  89. Tunable Y-branch dual-wavelength diode lasers in the VIS and NIR range for sensor applications

    Article • March 2019, SPIE

    Prof. Dr. Markus Weyers

  90. Characterization and comparison between two coupling concepts of four-wavelength monolithic DBR ridge waveguide diode laser at 970 nm

    Article • Applied Physics B Photophysics and Laser Chemistry, February 2019, Springer Science + Business Media

    Prof. Dr. Markus Weyers

  91. Stabilization of sputtered AlN/sapphire templates during high temperature annealing

    Article • Journal of Crystal Growth, February 2019, Elsevier

    Prof. Dr. Markus Weyers

  92. Crystal defect analysis in AlN layers grown by MOVPE on bulk AlN

    Article • Journal of Crystal Growth, January 2019, Elsevier

    Prof. Dr. Markus Weyers

  93. Tri-carbon defects in carbon doped GaN

    Article • Applied Physics Letters, December 2018, American Institute of Physics

    Prof. Dr. Markus Weyers

  94. Crystal damage analysis of implanted AlxGa1-xN (0 ≤ x ≤ 1) by ion beam techniques

    Article • Surface and Coatings Technology, December 2018, Elsevier

    Prof. Dr. Markus Weyers

  95. Optical investigations of europium ion implanted in nitride-based diode structures

    Article • Surface and Coatings Technology, December 2018, Elsevier

    Prof. Dr. Markus Weyers

  96. Influence of silicon doping on internal quantum efficiency and threshold of optically pumped deep UV AlGaN quantum well lasers

    Article • Semiconductor Science and Technology, November 2018, Institute of Physics Publishing

    Prof. Dr. Markus Weyers

  97. Influence of quartz on silicon incorporation in HVPE grown AlN

    Article • Journal of Crystal Growth, November 2018, Elsevier

    Prof. Dr. Markus Weyers

  98. Bow Reduction of AlInGaN-Based Deep UV LED Wafers Using Focused Laser Patterning

    Article • IEEE Photonics Technology Letters, October 2018, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr. Markus Weyers

  99. High-power sampled-grating-based master oscillator power amplifier system with 235  nm wavelength tuning around 970  nm

    Article • Applied Optics, October 2018, Optical Society of America (OSA)

    Prof. Dr. Markus Weyers

  100. Efficient iron doping of HVPE GaN

    Article • Journal of Crystal Growth, October 2018, Elsevier

    Prof. Dr. Markus Weyers

  101. Characterisation and comparison between different S-bend shaped GaAs Y-branch distributed Bragg reflector lasers emitting at 976 nm

    Article • Semiconductor Science and Technology, October 2018, Institute of Physics Publishing

    Prof. Dr. Markus Weyers

  102. Near Infrared Diode Laser THz Systems

    Article • Advances in Radio Science, September 2018, Copernicus GmbH

    Prof. Dr. Markus Weyers

  103. Influence of waveguide strain and surface morphology on AlGaN-based deep UV laser characteristics

    Article • Journal of Physics D Applied Physics, September 2018, Institute of Physics Publishing

    Prof. Dr. Markus Weyers

  104. High Pulse Power Wavelength Stabilized Laser Diodes for Automotive LiDAR

    Article • September 2018, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr. Markus Weyers

  105. Localization of current-induced degradation effects in (InAlGa)N-based UV-B LEDs

    Article • Journal of Applied Physics, August 2018, American Institute of Physics

    Prof. Dr. Markus Weyers

  106. Degradation behavior of AlGaN-based 233 nm deep-ultraviolet light emitting diodes

    Article • Semiconductor Science and Technology, August 2018, Institute of Physics Publishing

    Prof. Dr. Markus Weyers

  107. Reduction of absorption losses in MOVPE-grown AlGaAs Bragg mirrors

    Article • Optics Letters, July 2018, Optical Society of America (OSA)

    Prof. Dr. Markus Weyers

  108. Eu-Doped AlGaN/GaN Superlattice-Based Diode Structure for Red Lighting: Excitation Mechanisms and Active Sites

    Article • ACS Applied Nano Materials, July 2018, American Chemical Society (ACS)

    Prof. Dr. Markus Weyers

  109. Lifetime behavior of laser diodes with highly strained InGaAs QWs and emission wavelength between 1120 nm and 1180 nm

    Article • Journal of Crystal Growth, June 2018, Elsevier

    Prof. Dr. Markus Weyers

  110. Compact continuous wave THz source based on monolithic two-color laser diode

    Article • May 2018, SPIE

    Prof. Dr. Markus Weyers

  111. Impact of open-core threading dislocations on the performance of AlGaN metal-semiconductor-metal photodetectors

    Article • Journal of Applied Physics, April 2018, American Institute of Physics

    Prof. Dr. Markus Weyers

  112. Ultrafast carrier dynamics in a GaN/Al0.18Ga0.82N superlattice

    Article • April 2018, American Physical Society (APS)

    Prof. Dr. Markus Weyers

  113. Advanced in-situ control for III-nitride RF power device epitaxy

    Article • Semiconductor Science and Technology, March 2018, Institute of Physics Publishing

    Prof. Dr. Markus Weyers

  114. Wavelength stabilized high pulse power laser diodes for automotive LIDAR

    Article • March 2018, SPIE

    Prof. Dr. Markus Weyers

  115. High-Efficiency Broad-Ridge Waveguide Lasers

    Article • IEEE Photonics Technology Letters, March 2018, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr. Markus Weyers

  116. Degradation effects of the active region in UV-C light-emitting diodes

    Article • Journal of Applied Physics, March 2018, American Institute of Physics

    Prof. Dr. Markus Weyers

  117. GaN-Based Vertical n -Channel MISFETs on Free Standing Ammonothermal GaN Substrates

    Article • physica status solidi (a), March 2018, Wiley

    Prof. Dr. Markus Weyers

  118. Red-emitting distributed-feedback ridge-waveguide laser based on high-order surface grating

    Article • Electronics Letters, March 2018, the Institution of Engineering and Technology (the IET)

    Dr Olaf Brox, Prof. Dr. Markus Weyers

  119. Diffraction limited 1064nm monolithic DBR-master oscillator power amplifier with more than 7W output power

    Article • February 2018, SPIE

    Prof. Dr. Markus Weyers

  120. Influence of template properties and quantum well number on stimulated emission from Al0.7Ga0.3N/Al0.8Ga0.2N quantum wells

    Article • Semiconductor Science and Technology, February 2018, Institute of Physics Publishing

    Prof. Dr. Markus Weyers

  121. Influence of different approaches for dynamical performance optimization of monolithic passive colliding-pulse mode-locked laser diodes emitting around 850 nm

    Article • February 2018, SPIE

    Prof. Dr. Markus Weyers

  122. Reflectors and tuning elements for widely-tunable GaAs-based sampled grating DBR lasers

    Article • February 2018, SPIE

    Prof. Dr. Markus Weyers

  123. 5.5nm wavelength-tunable high-power MOPA diode laser system at 971 nm

    Article • February 2018, SPIE

    Prof. Dr. Markus Weyers

  124. 970-nm ridge waveguide diode laser bars for high power DWBC systems

    Article • February 2018, SPIE

    Prof. Dr. Markus Weyers

  125. Comparison for 1030nm DBR-tapered diode lasers with 10W central lobe output power and different grating layouts for wavelength stabilization and lateral spatial mode filtering

    Article • February 2018, SPIE

    Prof. Dr. Markus Weyers

  126. Pico- and nanosecond investigations of the lateral nearfield of broad area lasers under pulsed high-current excitation

    Article • February 2018, SPIE

    Prof. Dr. Markus Weyers

  127. Si impurity concentration in nominally undoped Al 0.7 Ga 0.3 N grown in a planetary MOVPE reactor

    Article • Journal of Crystal Growth, February 2018, Elsevier

    Prof. Dr. Markus Weyers

  128. AlGaN-based deep UV LEDs grown on sputtered and high temperature annealed AlN/sapphire

    Article • Applied Physics Letters, January 2018, American Institute of Physics

    Prof. Dr. Markus Weyers

  129. AFM characterization of AlGaAs/AlAs distributed Bragg reflectors

    Article • January 2018, Taylor & Francis

    Prof. Dr. Markus Weyers

  130. TEM investigations of oxidation phenomena in (Al,Ga)As/AlAs

    Article • January 2018, Taylor & Francis

    Prof. Dr. Markus Weyers

  131. Wavelength-Stabilized High-Pulse-Power Laser Diodes for Automotive LiDAR

    Article • physica status solidi (a), January 2018, Wiley

    Prof. Dr. Markus Weyers

  132. Analysis of strain and composition distributions in laterally strain-modulated InGaAs nanostructures after overgrowth with GaAs or InGaP

    Article • January 2018, Taylor & Francis

    Prof. Dr. Markus Weyers

  133. High power Y-branch MOPA-system with 9.7 nm wavelength tunability for IR up-conversion detection

    Article • January 2018, Optical Society of America (OSA)

    Prof. Dr. Markus Weyers

  134. Highly Reflective p-Contacts Made of Pd-Al on Deep Ultraviolet Light-Emitting Diodes

    Article • IEEE Photonics Technology Letters, December 2017, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr. Markus Weyers

  135. Effect of the GaN:Mg Contact Layer on the Light-Output and Current-Voltage Characteristic of UVB LEDs

    Article • physica status solidi (a), December 2017, Wiley

    Prof. Dr. Markus Weyers

  136. Effect of Electron Blocking Layer Doping and Composition on the Performance of 310 nm Light Emitting Diodes

    Article • Materials, December 2017, MDPI AG

    Prof. Dr. Markus Weyers

  137. High-quality AlN grown on a thermally decomposed sapphire surface

    Article • Journal of Crystal Growth, December 2017, Elsevier

    Prof. Dr. Markus Weyers

  138. Orientation dependent indium incorporation in MOVPE grown InGaAs/GaAs quantum wells

    Article • November 2017, Taylor & Francis

    Prof. Dr. Markus Weyers

  139. Compact High Power Diode Laser MOPA System With 5.5 nm Wavelength Tunability

    Article • IEEE Photonics Technology Letters, November 2017, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr. Markus Weyers

  140. On the EQE-bias characteristics of bottom-illuminated AlGaN-based metal-semiconductor-metal photodetectors with asymmetric electrode geometry

    Article • Journal of Applied Physics, November 2017, American Institute of Physics

    Prof. Dr. Markus Weyers

  141. Chip design for thin-film deep ultraviolet LEDs fabricated by laser lift-off of the sapphire substrate

    Article • Semiconductor Science and Technology, November 2017, Institute of Physics Publishing

    Prof. Dr. Markus Weyers

  142. MOVPE growth of violet GaN LEDs on β -Ga 2 O 3 substrates

    Article • Journal of Crystal Growth, November 2017, Elsevier

    Prof. Dr. Markus Weyers

  143. Efficient, High Brightness 1030 nm DBR Tapered Diode Lasers With Optimized Lateral Layout

    Article • IEEE Journal of Selected Topics in Quantum Electronics, November 2017, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr. Markus Weyers

  144. Extended 97  nm tuning range in a MOPA system with a tunable dual grating Y-branch laser

    Article • Optics Letters, October 2017, Optical Society of America (OSA)

    Prof. Dr. Markus Weyers

  145. 10.5 W central lobe output power obtained with an efficient 1030 nm DBR tapered diode laser

    Article • October 2017, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr. Markus Weyers

  146. Monolithically wavelength-stabilized high power diode lasers

    Article • October 2017, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr. Markus Weyers

  147. Reduction of Optical Feedback Originating From Ferroelectric Domains of Periodically Poled Crystals

    Article • IEEE Journal of Quantum Electronics, October 2017, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr. Markus Weyers

  148. Effect of Cl2 plasma treatment and annealing on vanadium based metal contacts to Si-doped Al0.75Ga0.25N

    Article • Journal of Applied Physics, September 2017, American Institute of Physics

    Prof. Dr. Markus Weyers

  149. Comparison of symmetric and asymmetric double quantum well extended-cavity diode lasers for broadband passive mode-locking at 780  nm

    Article • Applied Optics, June 2017, Optical Society of America (OSA)

    Prof. Dr. Markus Weyers

  150. DFB lasers with apodized surface gratings for wavelength stabilization and high efficiency

    Article • Semiconductor Science and Technology, June 2017, Institute of Physics Publishing

    Prof. Dr. Markus Weyers

  151. Avoidance of instable photoluminescence intensity from AlGaN bulk layers

    Article • physica status solidi (b), June 2017, Wiley

    Prof. Dr. Markus Weyers

  152. Design and realization of a widely tunable sampled-grating distributed-Bragg reflector (SG DBR) laser emitting at 976 nm

    Article • June 2017, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Olaf Brox, Prof. Dr. Markus Weyers

  153. Development of a compact mode-locked ECDL for precision frequency comparison experiments at 780 nm

    Article • June 2017, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr. Markus Weyers

  154. Realisation of a widely tuneable sampled grating DBR laser emitting around 970 nm

    Article • Electronics Letters, May 2017, the Institution of Engineering and Technology (the IET)

    Dr Olaf Brox, Prof. Dr. Markus Weyers, Pietro Della Casa

  155. High-power broad-area buried-mesa lasers

    Article • Semiconductor Science and Technology, May 2017, Institute of Physics Publishing

    Prof. Dr. Markus Weyers

  156. Metamorphic Al 0.5 Ga 0.5 N:Si on AlN/sapphire for the growth of UVB LEDs

    Article • Journal of Crystal Growth, April 2017, Elsevier

    Prof. Dr. Markus Weyers

  157. Design considerations for AlGaN-based UV LEDs emitting near 235 nm with uniform emission pattern

    Article • Semiconductor Science and Technology, March 2017, Institute of Physics Publishing

    Prof. Dr. Markus Weyers

  158. Gas Sensing of Nitrogen Oxide Utilizing Spectrally Pure Deep UV LEDs

    Article • IEEE Journal of Selected Topics in Quantum Electronics, March 2017, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr. Markus Weyers

  159. Silicon induced defect reduction in AlN template layers for epitaxial lateral overgrowth

    Article • Journal of Crystal Growth, March 2017, Elsevier

    Prof. Dr. Markus Weyers

  160. Non-uniform DFB-surface-etched gratings for enhanced performance high power, high brightness broad area lasers

    Article • February 2017, SPIE

    Prof. Dr. Markus Weyers

  161. 1030-nm diode-laser-based light source delivering pulses with nanojoule energies and picosecond duration adjustable by mode locking or pulse gating operation

    Article • February 2017, SPIE

    Prof. Dr. Markus Weyers

  162. 1030nm DBR tapered diode laser with up to 16 W of optical output power

    Article • February 2017, SPIE

    Prof. Dr. Markus Weyers

  163. 785nm dual-wavelength Y-branch DBR-RW diode laser with electrically adjustable wavelength distance between 0 nm and 2 nm

    Article • February 2017, SPIE

    Prof. Dr. Markus Weyers

  164. Influence of AlN buffer layer on growth of AlGaN by HVPE

    Article • physica status solidi (b), February 2017, Wiley

    Prof. Dr. Markus Weyers

  165. The effects of magnesium doping on the modal loss in AlGaN-based deep UV lasers

    Article • Applied Physics Letters, February 2017, American Institute of Physics

    Prof. Dr. Markus Weyers

  166. Picosecond pulsed micro-module emitting near 560 nm using a frequency doubled gain-switched DBR ridge waveguide semiconductor laser

    Article • February 2017, SPIE

    Prof. Dr. Markus Weyers

  167. AlGaN-based metal-semiconductor-metal photodetectors with high external quantum efficiency at low operating voltage

    Article • February 2017, SPIE

    Prof. Dr. Markus Weyers

  168. Terahertz frequency generation

    Article • IET Optoelectronics, January 2017, the Institution of Engineering and Technology (the IET)

    mr Jared Ombiro Gwaro, Prof. Dr. Markus Weyers

  169. In-situ photoluminescence measurements during MOVPE of GaN and InGaN in a CCS reactor

    Article • tm - Technisches Messen, January 2017, De Gruyter

    Prof. Dr. Markus Weyers

  170. Astigmatism-free high-brightness 1060 nm edge-emitting lasers with narrow circular beam profile

    Article • Optics Express, December 2016, Optical Society of America (OSA)

    Prof. Dr. Markus Weyers

  171. Triangular-shaped sapphire patterning for HVPE grown AlGaN layers

    Article • physica status solidi (a), December 2016, Wiley

    Prof. Dr. Markus Weyers

  172. Generation of optical picosecond pulses with monolithic colliding-pulse mode-locked (CPM) lasers containing a chirped double quantum well active region

    Article • IET Optoelectronics, December 2016, the Institution of Engineering and Technology (the IET)

    Dr Frank Bugge, Prof. Dr. Markus Weyers

  173. Fe-doping in hydride vapor-phase epitaxy for semi-insulating gallium nitride

    Article • Journal of Crystal Growth, December 2016, Elsevier

    Prof. Dr. Markus Weyers

  174. Strong amplitude-phase coupling in submonolayer quantum dots

    Article • Applied Physics Letters, November 2016, American Institute of Physics

    Prof. Dr. Markus Weyers

  175. Increased diffraction efficiencies of DBR gratings in diode lasers with adiabatic ridge waveguides

    Article • Semiconductor Science and Technology, November 2016, Institute of Physics Publishing

    Dr Olaf Brox, Prof. Dr. Markus Weyers

  176. Near-field microscopy of waveguide architectures of InGaN/GaN diode lasers

    Article • Semiconductor Science and Technology, October 2016, Institute of Physics Publishing

    Prof. Dr. Markus Weyers

  177. Role of substrate quality on the performance of semipolar (112¯2) InGaN light-emitting diodes

    Article • Journal of Applied Physics, October 2016, American Institute of Physics

    Prof. Dr. Markus Weyers

  178. In-situ control of large area (11–22)-GaN growth on patterned r -plane sapphire

    Article • Journal of Crystal Growth, October 2016, Elsevier

    Prof. Dr. Markus Weyers

  179. Temperature and doping dependent changes in surface recombination during UV illumination of (Al)GaN bulk layers

    Article • Journal of Applied Physics, September 2016, American Institute of Physics

    Prof. Dr. Markus Weyers

  180. Exciton localization in semipolar ( 112¯2) InGaN multiple quantum wells

    Article • Journal of Applied Physics, August 2016, American Institute of Physics

    Prof. Dr. Markus Weyers

  181. Dual-wavelength diode laser with electrically adjustable wavelength distance at 785  nm

    Article • Optics Letters, August 2016, Optical Society of America (OSA)

    Prof. Dr. Markus Weyers

  182. AlN growth on nano-patterned sapphire: A route for cost efficient pseudo substrates for deep UV LEDs

    Article • physica status solidi (a), August 2016, Wiley

    Prof. Dr. Markus Weyers

  183. Structural and optical properties of (112̅2) InGaN quantum wells compared to (0001) and (112̅0)

    Article • Semiconductor Science and Technology, July 2016, Institute of Physics Publishing

    Prof. Dr. Markus Weyers

  184. Study of damage formation and annealing of implanted III-nitride semiconductors for optoelectronic devices

    Article • Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms, July 2016, Elsevier

    Prof. Dr. Markus Weyers

  185. Correlation of sapphire off-cut and reduction of defect density in MOVPE grown AlN [Phys. Status Solidi B253, 809-813 (2016)]

    Article • physica status solidi (b), May 2016, Wiley

    Prof. Dr. Markus Weyers

  186. Quantification of matrix and impurity elements in AlxGa1−xN compounds by secondary ion mass spectrometry

    Article • Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena, May 2016, American Vacuum Society

    Prof. Dr. Markus Weyers

  187. Kinetics of AlGaN metal–organic vapor phase epitaxy for deep-UV applications

    Article • Japanese Journal of Applied Physics, April 2016, Japan Society of Applied Physics

    Prof. Dr. Markus Weyers

  188. Freely Triggerable Picosecond Pulses From a DBR Ridge Waveguide Diode Laser Near 1120 nm

    Article • IEEE Photonics Technology Letters, April 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Frank Bugge, Prof. Dr. Markus Weyers

  189. Correlation of sapphire off-cut and reduction of defect density in MOVPE grown AlN

    Article • physica status solidi (b), April 2016, Wiley

    Prof. Dr. Markus Weyers

  190. Low absorption loss p-AlGaN superlattice cladding layer for current-injection deep ultraviolet laser diodes

    Article • Applied Physics Letters, April 2016, American Institute of Physics

    Prof. Dr. Markus Weyers

  191. DBR tapered diode laser with 12.7 W output power and nearly diffraction-limited, narrowband emission at 1030 nm

    Article • Applied Physics B Photophysics and Laser Chemistry, April 2016, Springer Science + Business Media

    Dr Olaf Brox, Prof. Dr. Markus Weyers

  192. Mechanisms of Implantation Damage Formation in AlxGa1–xN Compounds

    Article • The Journal of Physical Chemistry C, March 2016, American Chemical Society (ACS)

    Prof. Dr. Markus Weyers

  193. Development of semipolar (11-22) LEDs on GaN templates

    Article • March 2016, SPIE

    Prof. Dr. Markus Weyers

  194. Process control of MOCVD growth for LEDs by in-situ photoluminescence

    Article • March 2016, SPIE

    Prof. Dr. Markus Weyers

  195. DBR tapered diode laser at 1030 nm with nearly diffraction-limited narrowband emission and 12.7 W of optical output power

    Article • March 2016, SPIE

    Dr Frank Bugge, Dr Olaf Brox, Prof. Dr. Markus Weyers

  196. Generation of 7W nanosecond pulses with 670nm ridge-waveguide lasers

    Article • March 2016, SPIE

    Prof. Dr. Markus Weyers

  197. Determination of polarization fields in group III-nitride heterostructures by capacitance-voltage-measurements

    Article • Journal of Applied Physics, March 2016, American Institute of Physics

    Prof. Dr. Markus Weyers

  198. Novel approaches to increasing the brightness of broad area lasers

    Article • March 2016, SPIE

    Prof. Dr. Markus Weyers

  199. Terahertz wave generation from dual wavelength monolithic integrated distributed Bragg reflector semiconductor laser diode

    Article • March 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr. Markus Weyers

  200. Influence of the LED heterostructure on the degradation behavior of (InAlGa)N-based UV-B LEDs

    Article • February 2016, SPIE

    Prof. Dr. Markus Weyers

  201. MOVPE growth of laser structures for high-power applications at different ambient temperatures

    Article • Journal of Crystal Growth, January 2016, Elsevier

    Dr Frank Bugge, Prof. Dr. Markus Weyers

  202. CBr 4 -based in-situ etching of GaAs, assisted with TMAl and TMGa

    Article • Journal of Crystal Growth, January 2016, Elsevier

    Prof. Dr. Markus Weyers

  203. High power surface-grating stabilized narrow-stripe broad area lasers with beam parameter product < 2 mm×mrad

    Article • January 2016, Optical Society of America (OSA)

    Prof. Dr. Markus Weyers

  204. Measurement and simulation of top- and bottom-illuminated solar-blind AlGaN metal-semiconductor-metal photodetectors with high external quantum efficiencies

    Article • Journal of Applied Physics, December 2015, American Institute of Physics

    Prof. Dr. Markus Weyers

  205. Defect distribution and compositional inhomogeneities in Al0.5Ga0.5N layers grown on stepped surfaces

    Article • Semiconductor Science and Technology, December 2015, Institute of Physics Publishing

    Prof. Dr. Markus Weyers

  206. Solar- and Visible-Blind AlGaN Photodetectors

    Article • November 2015, Springer Science + Business Media

    Prof. Dr. Markus Weyers

  207. Vapor Phase Epitaxy of AlGaN Base Layers on Sapphire Substrates for Nitride-Based UV-Light Emitters

    Article • November 2015, Springer Science + Business Media

    Prof. Dr. Markus Weyers

  208. Efficient carrier-injection and electron-confinement in UV-B light-emitting diodes

    Article • physica status solidi (a), November 2015, Wiley

    Prof. Dr. Markus Weyers

  209. High Temperature Operation of 1060-nm High-Brightness Photonic Band Crystal Lasers With Very Low Astigmatism

    Article • IEEE Journal of Selected Topics in Quantum Electronics, November 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr. Markus Weyers

  210. High-Power Distributed Feedback Lasers With Surface Gratings: Theory and Experiment

    Article • IEEE Journal of Selected Topics in Quantum Electronics, November 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr. Markus Weyers

  211. Femtosecond Mode-Locked Semiconductor Disk Lasers

    Article • October 2015, Springer Science + Business Media

    Prof. Dr. Markus Weyers

  212. Spatial inhomogeneities in AlxGa1−xN quantum wells induced by the surface morphology of AlN/sapphire templates

    Article • Semiconductor Science and Technology, October 2015, Institute of Physics Publishing

    Prof. Dr. Markus Weyers

  213. V-pit to truncated pyramid transition in AlGaN-based heterostructures

    Article • Semiconductor Science and Technology, October 2015, Institute of Physics Publishing

    Prof. Dr. Markus Weyers

  214. Impact of acceptor concentration on the resistivity of Ni/Au p-contacts on semipolar (20-21) GaN:Mg

    Article • physica status solidi (b), October 2015, Wiley

    Prof. Dr. Markus Weyers

  215. Strongly transverse-electric-polarized emission from deep ultraviolet AlGaN quantum well light emitting diodes

    Article • Applied Physics Letters, October 2015, American Institute of Physics

    Prof. Dr. Markus Weyers

  216. Solar-blind AlGaN MSM photodetectors with 24% external quantum efficiency at 0 V

    Article • Electronics Letters, October 2015, the Institution of Engineering and Technology (the IET)

    Mr Moritz Brendel, Prof. Dr. Markus Weyers

  217. High power picosecond and nanosecond diode laser sources in the wavelength range 650 nm to 1100 nm

    Article • October 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr. Markus Weyers

  218. Study of lateral brightness in 20 μm to 50 μm wide narrow stripe broad area lasers

    Article • October 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr. Markus Weyers

  219. Limitations to brightness in high power laser diodes

    Article • October 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr. Markus Weyers

  220. UV-C Lasing From AlGaN Multiple Quantum Wells on Different Types of AlN/Sapphire Templates

    Article • IEEE Photonics Technology Letters, September 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr. Markus Weyers

  221. On optical polarization and charge carrier statistics of nonpolar InGaN quantum wells

    Article • physica status solidi (b), September 2015, Wiley

    Prof. Dr. Markus Weyers

  222. Degradation of (InAlGa)N-based UV-B light emitting diodes stressed by current and temperature

    Article • Journal of Applied Physics, September 2015, American Institute of Physics

    Prof. Dr. Markus Weyers

  223. 24-wavelength distributed Bragg reflector laser array with surface gratings

    Article • Electronics Letters, August 2015, the Institution of Engineering and Technology (the IET)

    Dr Olaf Brox, Prof. Dr. Markus Weyers

  224. Spatial clustering of defect luminescence centers in Si-doped low resistivity Al0.82Ga0.18N

    Article • Applied Physics Letters, August 2015, American Institute of Physics

    Prof. Dr. Markus Weyers

  225. 25-W Monolithic Spectrally Stabilized 975-nm Minibars for Dense Spectral Beam Combining

    Article • IEEE Photonics Technology Letters, August 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr. Markus Weyers

  226. Deep ultraviolet LEDs: From materials research to real-world applications

    Article • July 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr. Markus Weyers

  227. Semipolar (112―2) InGaN light-emitting diodes grown on chemically-mechanically polished GaN templates

    Article • physica status solidi (a), June 2015, Wiley

    Prof. Dr. Markus Weyers

  228. Comparison of two concepts for dual-wavelength DBR ridge waveguide diode lasers at 785 nm suitable for shifted excitation Raman difference spectroscopy

    Article • Applied Physics B Photophysics and Laser Chemistry, May 2015, Springer Science + Business Media

    Prof. Dr. Markus Weyers

  229. In-situ observation of InGaN quantum well decomposition during growth of laser diodes

    Article • Crystal Research and Technology, May 2015, Wiley

    Prof. Dr. Markus Weyers

  230. Watt-level continuous-wave diode lasers at 1180 nm with high spectral brightness

    Article • April 2015, SPIE

    Dr Olaf Brox, Dr Frank Bugge, Prof. Dr. Markus Weyers

  231. In-situ photoluminescence measurements during MOVPE growth of GaN and InGaN MQW structures

    Article • Journal of Crystal Growth, April 2015, Elsevier

    Prof. Dr. Markus Weyers

  232. Effect of carrier gas in hydride vapor phase epitaxy on optical and structural properties of GaN

    Article • physica status solidi (b), March 2015, Wiley

    Prof. Dr. Markus Weyers

  233. Semi-polar (112¯2)-GaN templates grown on 100 mm trench-patternedr-plane sapphire

    Article • physica status solidi (b), March 2015, Wiley

    Prof. Dr. Markus Weyers

  234. Current spreading in UV-C LEDs emitting at 235 nm

    Article • March 2015, SPIE

    Prof. Dr. Markus Weyers

  235. High-power UV-B LEDs with long lifetime

    Article • March 2015, SPIE

    Prof. Dr. Markus Weyers

  236. Development of high-power diode lasers with beam parameter product below 2 mm×mrad within the BRIDLE project

    Article • March 2015, SPIE

    Prof. Dr. Markus Weyers

  237. Generation of spectrally-stable continuous-wave emission and ns pulses at 800 nm and 975 nm with a peak power of 4 W using a distributed Bragg reflector laser and a ridge-waveguide power amplifier

    Article • March 2015, SPIE

    Dr Frank Bugge, Prof. Dr. Markus Weyers

  238. 785-nm dual wavelength DBR diode lasers and MOPA systems with output powers up to 750 mW

    Article • March 2015, SPIE

    Prof. Dr. Markus Weyers

  239. Shifted excitation Raman difference spectroscopy using a dual-wavelength DBR diode laser at 785 nm

    Article • March 2015, SPIE

    Dr Frank Bugge, Prof. Dr. Markus Weyers

  240. Combined Mg/Zn p-type doping for AlGaInP laser diodes

    Article • Journal of Crystal Growth, March 2015, Elsevier

    Dr Frank Bugge, Prof. Dr. Markus Weyers

  241. Growth of laser diode structures with emission wavelength beyond 1100nm for yellow–green emission by frequency conversion

    Article • Journal of Crystal Growth, March 2015, Elsevier

    Dr Frank Bugge, Prof. Dr. Markus Weyers

  242. AlAsP-based strain-balancing in MOVPE-grown distributed Bragg reflectors

    Article • Journal of Crystal Growth, March 2015, Elsevier

    Prof. Dr. Markus Weyers

  243. Analysis of HVPE grown AlGaN layers on honeycomb patterned sapphire

    Article • Journal of Crystal Growth, March 2015, Elsevier

    Prof. Dr. Markus Weyers

  244. Top- and bottom-illumination of solar-blind AlGaN metal-semiconductor-metal photodetectors

    Article • physica status solidi (a), January 2015, Wiley

    Prof. Dr. Markus Weyers

  245. High peak power pulse generation from PBC lasers

    Article • December 2014, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr. Markus Weyers

  246. Enhanced quantum efficiency of AlGaN photodetectors by patterned growth

    Article • physica status solidi (a), November 2014, Wiley

    Prof. Dr. Markus Weyers

  247. Effect of quantum well non-uniformities on lasing threshold, linewidth, and lateral near field filamentation in violet (Al,In)GaN laser diodes

    Article • Applied Physics Letters, October 2014, American Institute of Physics

    Prof. Dr. Markus Weyers

  248. High brightness photonic band crystal semiconductor lasers in the passive mode locking regime

    Article • Applied Physics Letters, October 2014, American Institute of Physics

    Prof. Dr. Markus Weyers

  249. 1.9 W continuous-wave single transverse mode emission from 1060 nm edge-emitting lasers with vertically extended lasing area

    Article • Applied Physics Letters, October 2014, American Institute of Physics

    Prof. Dr. Markus Weyers

  250. Generation of spectrally stable continuous-wave emission and ns pulses with a peak power of 4 W using a distributed Bragg reflector laser and a ridge-waveguide power amplifier

    Article • Optics Express, September 2014, Optical Society of America (OSA)

    Dr Frank Bugge, Prof. Dr. Markus Weyers

  251. Nano-optical analysis of GaN-based diode lasers

    Article • Semiconductor Science and Technology, September 2014, Institute of Physics Publishing

    Prof. Dr. Markus Weyers

  252. Defect analysis in AlGaN layers on AlN templates obtained by epitaxial lateral overgrowth

    Article • Journal of Crystal Growth, September 2014, Elsevier

    Prof. Dr. Markus Weyers

  253. Impact of electron irradiation on electron holographic potentiometry

    Article • Applied Physics Letters, September 2014, American Institute of Physics

    Prof. Dr. Markus Weyers

  254. Efficient charge carrier injection into sub-250 nm AlGaN multiple quantum well light emitting diodes

    Article • Applied Physics Letters, August 2014, American Institute of Physics

    Prof. Dr. Markus Weyers

  255. Analysis of crystal orientation in AlN layers grown on m-plane sapphire

    Article • Journal of Crystal Growth, August 2014, Elsevier

    Prof. Dr. Markus Weyers

  256. Factors influencing brightness and beam quality of conventional and distributed Bragg reflector tapered laser diodes in absence of self-heating

    Article • IET Optoelectronics, April 2014, the Institution of Engineering and Technology (the IET)

    Prof. Dr. Markus Weyers

  257. Influence of barrier growth schemes on the structural properties and thresholds of InGaN quantum well laser diodes

    Article • Journal of Crystal Growth, April 2014, Elsevier

    Prof. Dr. Markus Weyers

  258. Narrow Stripe Broad Area Lasers With High Order Distributed Feedback Surface Gratings

    Article • IEEE Photonics Technology Letters, April 2014, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr. Markus Weyers

  259. Narrow-stripe broad-area lasers with distributed-feedback surface gratings as brilliant sources for high power spectral beam combining systems

    Article • March 2014, SPIE

    Prof. Dr. Markus Weyers

  260. Wavelength stabilized 785 nm DBR-ridge waveguide lasers with an output power of up to 215 mW

    Article • Semiconductor Science and Technology, March 2014, Institute of Physics Publishing

    Prof. Dr. Markus Weyers

  261. Red emitting monolithic dual wavelength DBR diode lasers for shifted excitation Raman difference spectroscopy

    Article • February 2014, SPIE

    Prof. Dr. Markus Weyers

  262. Shifted excitation Raman difference spectroscopy using a dual-wavelength DBR diode laser at 671 nm

    Article • February 2014, SPIE

    Prof. Dr. Markus Weyers

  263. Surface topology caused by dislocations in polar, semipolar, and nonpolar InGaN/GaN heterostructures

    Article • physica status solidi (a), February 2014, Wiley

    Prof. Dr. Markus Weyers

  264. Polarization of photoluminescence emission from semi-polar (11–22) AlGaN layers

    Article • Applied Physics Letters, February 2014, American Institute of Physics

    Prof. Dr. Markus Weyers

  265. Solar-blind AlxGa1-xN MSM photodetectors on patterned AlN/sapphire templates with 0.4 < x < 1

    Article • physica status solidi c, February 2014, Wiley

    Prof. Dr. Markus Weyers

  266. Performance Characteristics of UV-C AlGaN-Based Lasers Grown on Sapphire and Bulk AlN Substrates

    Article • IEEE Photonics Technology Letters, February 2014, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr. Markus Weyers

  267. MOVPE growth of AlxGa1-xN with x ∼ 0.5 on epitaxial laterally overgrown AlN/sapphire templates for UV-LEDs

    Article • physica status solidi c, January 2014, Wiley

    Prof. Dr. Markus Weyers

  268. Double Heterostructure AlGaAs/GaAs W-shaped Waveguide Mach-Zehnder Intensity Modulator for 780 nm Lasers

    Article • January 2014, Optical Society of America (OSA)

    Dr Olaf Brox, Prof. Dr. Markus Weyers

  269. Anisotropic Responsivity of AlGaN Metal–Semiconductor–Metal Photodetectors on Epitaxial Laterally Overgrown AlN/Sapphire Templates

    Article • Journal of Electronic Materials, January 2014, Springer Science + Business Media

    Prof. Dr. Markus Weyers

  270. Hydride Vapor-Phase Epitaxy of c-Plane AlGaN Layers on Patterned Sapphire Substrates

    Article • Journal of Electronic Materials, December 2013, Springer Science + Business Media

    Prof. Dr. Markus Weyers

  271. Techniques towards GaN power transistors with improved high voltage dynamic switching properties

    Article • December 2013, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr. Markus Weyers

  272. Suppression of Higher-Order Lateral Modes in Broad-Area Diode Lasers by Resonant Anti-Guiding

    Article • IEEE Journal of Quantum Electronics, December 2013, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr. Markus Weyers

  273. Cathodoluminescence and TEM investigations of structural and optical properties of AlGaN on epitaxial laterally overgrown AlN/sapphire templates

    Article • Journal of Physics Conference Series, November 2013, Institute of Physics Publishing

    Prof. Dr. Markus Weyers

  274. Origin of a-plane (Al,Ga)N formation on patterned c-plane AIN/sapphire templates

    Article • Journal of Physics Conference Series, November 2013, Institute of Physics Publishing

    Prof. Dr. Markus Weyers

  275. Excitonic recombination in epitaxial lateral overgrown AlN on sapphire

    Article • Applied Physics Letters, November 2013, American Institute of Physics

    Prof. Dr. Markus Weyers

  276. Highly conductive n-AlxGa1−xN layers with aluminum mole fractions above 80%

    Article • Applied Physics Letters, November 2013, American Institute of Physics

    Prof. Dr. Markus Weyers

  277. Investigation of the temperature dependent efficiency droop in UV LEDs

    Article • Semiconductor Science and Technology, November 2013, Institute of Physics Publishing

    Prof. Dr. Markus Weyers

  278. Electrical properties and microstructure of vanadium-based contacts on ICP plasma etched n-type AlGaN:Si and GaN:Si surfaces

    Article • Semiconductor Science and Technology, November 2013, Institute of Physics Publishing

    Prof. Dr. Markus Weyers

  279. Double-heterostructure ridge-waveguide GaAs/AlGaAs phase modulator for 780 nm lasers

    Article • Applied Physics B Photophysics and Laser Chemistry, October 2013, Springer Science + Business Media

    Dr Olaf Brox, Prof. Dr. Markus Weyers

  280. Degradation processes in high-power diode lasers under external optical feedback

    Article • October 2013, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr. Markus Weyers

  281. Optical pulse generation in photonic band crystal mode locked lasers

    Article • October 2013, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr. Markus Weyers

  282. High Brightness, Narrow Bandwidth DBR Diode Lasers at 1120 nm

    Article • IEEE Photonics Technology Letters, October 2013, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr. Markus Weyers

  283. High-brilliance diode lasers with monolithically-integrated surface gratings as sources for spectral beam combining

    Article • October 2013, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr. Markus Weyers

  284. Breakdown and dynamic effects in GaN power switching devices

    Article • physica status solidi c, September 2013, Wiley

    Prof. Dr. Markus Weyers

  285. Stress evolution during AlxGa1−xN/AlN growth on sapphire

    Article • Journal of Crystal Growth, August 2013, Elsevier

    Prof. Dr. Markus Weyers

  286. High quality AlGaN grown on ELO AlN/sapphire templates

    Article • Journal of Crystal Growth, August 2013, Elsevier

    Prof. Dr. Markus Weyers

  287. Quantum Efficiency Analysis of Near-Ultraviolet Emitting AlGaN and AlInGaN Structures

    Article • Japanese Journal of Applied Physics, August 2013, Institute of Physics Publishing

    Prof. Dr. Markus Weyers

  288. Influence of Carrier Lifetime, Transit Time, and Operation Voltages on the Photoresponse of Visible-Blind AlGaN Metal–Semiconductor–Metal Photodetectors

    Article • Japanese Journal of Applied Physics, August 2013, Institute of Physics Publishing

    Prof. Dr. Markus Weyers

  289. AlGaN Metal–Semiconductor–Metal Photodetectors on Planar and Epitaxial Laterally Overgrown AlN/Sapphire Templates for the Ultraviolet C Spectral Region

    Article • Japanese Journal of Applied Physics, August 2013, Institute of Physics Publishing

    Prof. Dr. Markus Weyers

  290. Waveguide Optimization for Semipolar (In,Al,Ga)N Lasers

    Article • Japanese Journal of Applied Physics, August 2013, Institute of Physics Publishing

    Prof. Dr. Markus Weyers

  291. Linear thermal expansion coefficient determination using in situ curvature and temperature dependent X-ray diffraction measurements applied to metalorganic vapor phase epitaxy-grown AlGaAs

    Article • Journal of Applied Physics, July 2013, American Institute of Physics

    Prof. Dr. Markus Weyers

  292. Characterization of semiconductor devices and wafer materials via sub-nanosecond time-correlated single-photon counting

    Article • Journal of Applied Spectroscopy, July 2013, Springer Science + Business Media

    Prof. Dr. Markus Weyers

  293. Monolithic Y-branch dual wavelength DBR diode laser at 671nm for shifted excitation Raman difference spectroscopy

    Article • May 2013, SPIE

    Prof. Dr. Markus Weyers

  294. Dual-wavelength monolithic Y-branch distributed Bragg reflection diode laser at 671 nm suitable for shifted excitation Raman difference spectroscopy

    Article • Laser & Photonics Review, May 2013, Wiley

    Prof. Dr. Markus Weyers

  295. MOVPE growth of Al0.85Ga0.15As for high power laser diodes emitting at 808nm

    Article • Journal of Crystal Growth, May 2013, Elsevier

    Dr Frank Bugge, Prof. Dr. Markus Weyers

  296. Tunable and highly brilliant laser sources at 1120 nm

    Article • May 2013, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Frank Bugge, Prof. Dr. Markus Weyers

  297. MOVPE-grown AlxGa1−xAsyP1−y strain compensating layers on GaAs

    Article • Journal of Crystal Growth, May 2013, Elsevier

    Prof. Dr. Markus Weyers

  298. Phase control of semi-polar and non-polar GaN on cone shaped r-plane patterned sapphire substrates

    Article • Journal of Crystal Growth, May 2013, Elsevier

    Prof. Dr. Markus Weyers

  299. In-situ etching of patterned GaAs/InGaP surfaces for highly efficient 975nm DFB-BA diode lasers

    Article • Journal of Crystal Growth, May 2013, Elsevier

    Prof. Dr. Markus Weyers

  300. Impact of AlN nucleation layer on strain in GaN grown on 4H-SiC substrates

    Article • Journal of Crystal Growth, May 2013, Elsevier

    Prof. Dr. Markus Weyers

  301. Monolithic Y-branch dual wavelength DBR diode laser at 671 nm for shifted excitation Raman difference spectroscopy

    Article • May 2013, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr. Markus Weyers

  302. Controlled coalescence of MOVPE grown AlN during lateral overgrowth

    Article • Journal of Crystal Growth, April 2013, Elsevier

    Prof. Dr. Markus Weyers

  303. Device Breakdown and Dynamic effects in GaN Power Switching Devices: Dependencies on Material Properties and Device Design

    Article • ECS Transactions, March 2013, The Electrochemical Society

    Prof. Dr. Markus Weyers

  304. (Invited) Technological Approaches Towards High Voltage, Fast Switching GaN Power Transistors

    Article • ECS Transactions, March 2013, The Electrochemical Society

    Prof. Dr. Markus Weyers

  305. Predominant growth of non-polar a-plane (Al,Ga)N on patterned c-plane sapphire by hydride vapor phase epitaxy

    Article • Journal of Applied Physics, March 2013, American Institute of Physics

    Prof. Dr. Markus Weyers

  306. 1120nm highly brilliant laser sources for SHG-modules in bio-analytics and spectroscopy

    Article • March 2013, SPIE

    Dr Frank Bugge, Prof. Dr. Markus Weyers

  307. The impact of external optical feedback on the degradation behavior of high-power diode lasers

    Article • February 2013, SPIE

    Prof. Dr. Markus Weyers

  308. Y-branch coupled DFB-lasers based on high-order Bragg gratings for wavelength stabilization

    Article • Semiconductor Science and Technology, February 2013, Institute of Physics Publishing

    Prof. Dr. Markus Weyers

  309. Effective Thermal Management in Ultraviolet Light-Emitting Diodes With Micro-LED Arrays

    Article • IEEE Transactions on Electron Devices, February 2013, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr. Markus Weyers

  310. Optimization of GaN wafer bow grown on cone shaped patterned sapphire substrates

    Article • Journal of Crystal Growth, January 2013, Elsevier

    Prof. Dr. Markus Weyers

  311. AlGaN photodetectors for the UV-C spectral region on planar and epitaxial laterally overgrown AlN/sapphire templates

    Article • physica status solidi c, December 2012, Wiley

    Prof. Dr. Markus Weyers

  312. HVPE growth of thick Al0.45Ga0.55N layers on trench patterned sapphire substrates

    Article • physica status solidi c, December 2012, Wiley

    Prof. Dr. Markus Weyers

  313. Diode laser based light sources for biomedical applications

    Article • Laser & Photonics Review, December 2012, Wiley

    Prof. Dr. Markus Weyers

  314. Si Doping of GaN in Hydride Vapor-Phase Epitaxy

    Article • Journal of Electronic Materials, December 2012, Springer Science + Business Media

    Prof. Dr. Markus Weyers

  315. AlGaN layer structures for deep UV emitters on laterally overgrown AlN/sapphire templates

    Article • physica status solidi (a), December 2012, Wiley

    Prof. Dr. Markus Weyers

  316. Impact of light polarization on photoluminescence intensity and quantum efficiency in AlGaN and AlInGaN layers

    Article • Applied Physics Letters, December 2012, American Institute of Physics

    Prof. Dr. Markus Weyers

  317. Indium incorporation efficiency and critical layer thickness of (202¯1) InGaN layers on GaN

    Article • Applied Physics Letters, November 2012, American Institute of Physics

    Prof. Dr. Markus Weyers

  318. Watt-class green-emitting laser modules using direct second harmonic generation of diode laser radiation

    Article • Optical Review, November 2012, Springer Science + Business Media

    Prof. Dr. Markus Weyers

  319. Effect of TMGa preflow on the properties of high temperature AlN layers grown on sapphire

    Article • physica status solidi (a), October 2012, Wiley

    Prof. Dr. Markus Weyers

  320. Topography of AlGaN, GaN and InGaN layers grown by metal-organic vapor phase epitaxy

    Article • Journal of Crystal Growth, October 2012, Elsevier

    Prof. Dr. Markus Weyers

  321. Modulated Epitaxial Lateral Overgrowth of AlN for Efficient UV LEDs

    Article • IEEE Photonics Technology Letters, September 2012, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr. Markus Weyers

  322. Analysis of doping induced wafer bow during GaN:Si growth on sapphire

    Article • Journal of Applied Physics, August 2012, American Institute of Physics

    Prof. Dr. Markus Weyers

  323. Spacer and well pumping of InGaN vertical cavity semiconductor lasers with varying number of quantum wells

    Article • Journal of Applied Physics, August 2012, American Institute of Physics

    Prof. Dr. Markus Weyers

  324. High-Power Distributed Feedback Lasers With Surface Gratings

    Article • IEEE Photonics Technology Letters, August 2012, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Olaf Brox, Prof. Dr. Markus Weyers

  325. HVPE of AlxGa1−xN layers on planar and trench patterned sapphire

    Article • Journal of Crystal Growth, August 2012, Elsevier

    Prof. Dr. Markus Weyers

  326. Investigation of GaAs based MOVPE-grown AlxGa1−xAsyP1−y strain compensating layers

    Article • August 2012, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr. Markus Weyers

  327. Experimental and theoretical study of finite-aperture tapered unstable resonator lasers

    Article • Semiconductor Science and Technology, August 2012, Institute of Physics Publishing

    Prof. Dr. Markus Weyers

  328. Buried DFB gratings floating in AlGaAs with low oxygen contamination enable high power and efficiency DFB lasers

    Article • July 2012, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Olaf Brox, Prof. Dr. Markus Weyers

  329. Growth of GaN boules via vertical HVPE

    Article • Journal of Crystal Growth, July 2012, Elsevier

    Prof. Dr. Markus Weyers

  330. Factors influencing the brightness and beam quality of tapered laser diodes and bars

    Article • July 2012, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr. Markus Weyers

  331. In situ etched gratings embedded in AlGaAs for efficient high power 970 nm distributed feedback broad-area lasers

    Article • Applied Physics Letters, May 2012, American Institute of Physics

    Dr Olaf Brox, Prof. Dr. Markus Weyers

  332. 96 mW longitudinal single mode red-emitting distributed Bragg reflector ridge waveguide laser with tenth order surface gratings

    Article • Optics Letters, May 2012, Optical Society of America (OSA)

    Dr Frank Bugge, Prof. Dr. Markus Weyers

  333. 1060-nm Ridge Waveguide Lasers Based on Extremely Wide Waveguides for 1.3-W Continuous-Wave Emission Into a Single Mode With FWHM Divergence Angle of $9^{\circ}\times 6^{\circ}$

    Article • IEEE Journal of Quantum Electronics, May 2012, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr. Markus Weyers

  334. Properties and fabrication of high-order Bragg gratings for wavelength stabilization of diode lasers

    Article • Semiconductor Science and Technology, April 2012, Institute of Physics Publishing

    Prof. Dr. Markus Weyers

  335. 10-W reliable 90-μm-wide broad area lasers with internal grating stabilization

    Article • February 2012, SPIE

    Dr Olaf Brox, Dr Frank Bugge, Prof. Dr. Markus Weyers

  336. All-semiconductor-based narrow linewidth high-power laser system for laser communication applications in space at 1060 nm

    Article • February 2012, SPIE

    Dr Frank Bugge, Prof. Dr. Markus Weyers

  337. Harmonically and fundamentally mode-locked InGaAs-AlGaAs disk laser generating pulse repetition rates in the 100 GHz or pulse durations in the 100-fs range

    Article • February 2012, SPIE

    Prof. Dr. Markus Weyers

  338. 100,000 h estimated lifetime of 100-μm-stripe width 650 nm broad area lasers at an output power of 1.2 W

    Article • February 2012, SPIE

    Prof. Dr. Markus Weyers

  339. Generation of picosecond pulses and optical frequency combs with multi-section 1065nm ridge waveguide diode lasers

    Article • February 2012, SPIE

    Prof. Dr. Markus Weyers

  340. Red-emitting diode lasers with internal surface DBR gratings

    Article • February 2012, SPIE

    Prof. Dr. Markus Weyers

  341. Indium incorporation and emission wavelength of polar, nonpolar and semipolar InGaN quantum wells

    Article • Semiconductor Science and Technology, January 2012, Institute of Physics Publishing

    Prof. Dr. Markus Weyers

  342. Polarization of eigenmodes and the effect on the anisotropic gain in laser structures on nonpolar and semipolar GaN

    Article • January 2012, SPIE

    Prof. Dr. Markus Weyers

  343. Auger effect in nonpolar quantum wells

    Article • January 2012, SPIE

    Prof. Dr. Markus Weyers

  344. High-power low-divergence 1060 nm photonic crystal laser diodes based on quantum dots

    Article • Electronics Letters, January 2012, the Institution of Engineering and Technology (the IET)

    Prof. Dr. Markus Weyers

  345. High-Power, High-Efficiency Monolithic Edge-Emitting GaAs-Based Lasers with Narrow Spectral Widths

    Article • January 2012, Elsevier

    Prof. Dr. Markus Weyers

  346. Effect of temperature and strain on the optical polarization of (In)(Al)GaN ultraviolet light emitting diodes

    Article • Applied Physics Letters, December 2011, American Institute of Physics

    Prof. Dr. Markus Weyers

  347. Investigation of inversion domain formation in AlN grown on sapphire by MOVPE

    Article • physica status solidi c, December 2011, Wiley

    Prof. Dr. Markus Weyers

  348. High-power, spectrally stabilized, near-diffraction-limited 970 nm laser light source based on truncated-tapered semiconductor optical amplifiers with low confinement factors

    Article • Semiconductor Science and Technology, December 2011, Institute of Physics Publishing

    Dr Frank Bugge, Prof. Dr. Markus Weyers

  349. Spectral properties of polarized light from semipolar grown InGaN quantum wells at low temperatures

    Article • physica status solidi c, November 2011, Wiley

    Prof. Dr. Markus Weyers

  350. Polarization dependent study of gain anisotropy in semipolar InGaN lasers

    Article • Applied Physics Letters, October 2011, American Institute of Physics

    Prof. Dr. Markus Weyers

  351. 56W optical output power at 970nm from a truncated tapered semiconductor optical amplifier

    Article • October 2011, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr. Markus Weyers

  352. Strong charge carrier localization interacting with extensive nonradiative recombination in heteroepitaxially grown m-plane GaInN quantum wells

    Article • Semiconductor Science and Technology, September 2011, Institute of Physics Publishing

    Prof. Dr. Markus Weyers

  353. 20 000 h reliable operation of 100 µm stripe width 650 nm broad area lasers at more than 1.1 W output power

    Article • Semiconductor Science and Technology, September 2011, Institute of Physics Publishing

    Prof. Dr. Markus Weyers

  354. Enhancement of channel conductivity in AlGaN/GaN heterostructure field effect transistors by AlGaN:Si back barrier

    Article • Applied Physics Letters, September 2011, American Institute of Physics

    Prof. Dr. Markus Weyers

  355. Reliability issues of GaN based high voltage power devices

    Article • Microelectronics Reliability, September 2011, Elsevier

    Prof. Dr. Markus Weyers

  356. On the optical polarization properties of semipolar InGaN quantum wells

    Article • Applied Physics Letters, August 2011, American Institute of Physics

    Prof. Dr. Markus Weyers

  357. Tilted Wave Lasers: A Way to High Brightness Sources of Light

    Article • IEEE Journal of Quantum Electronics, July 2011, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr. Markus Weyers

  358. Comparative study of buffer designs for high breakdown voltage AlGaNGaN HFETs

    Article • physica status solidi c, June 2011, Wiley

    Prof. Dr. Markus Weyers

  359. Optimisation of 660 nm high-power tapered diode lasers

    Article • IET Optoelectronics, June 2011, the Institution of Engineering and Technology (the IET)

    Prof. Dr. Markus Weyers

  360. High gain ultraviolet photodetectors based on AlGaN/GaN heterostructures for optical switching

    Article • Applied Physics Letters, May 2011, American Institute of Physics

    Prof. Dr. Markus Weyers

  361. Study of excess carrier dynamics in polar, semi-polar, and non-polar (In,Ga)N epilayers and QWs

    Article • physica status solidi c, May 2011, Wiley

    Prof. Dr. Markus Weyers

  362. GaInN quantum well design and measurement conditions affecting the emission energy S-shape

    Article • physica status solidi c, May 2011, Wiley

    Prof. Dr. Markus Weyers

  363. (Al,Ga)N overgrowth over AlN ridges oriented in [1120] and [1100] direction

    Article • physica status solidi c, April 2011, Wiley

    Prof. Dr. Markus Weyers

  364. GaN boules grown by high rate HVPE

    Article • physica status solidi c, March 2011, Wiley

    Prof. Dr. Markus Weyers

  365. Pulse repetition rate up to 92 GHz or pulse duration shorter than 110 fs from a mode-locked semiconductor disk laser

    Article • Applied Physics Letters, February 2011, American Institute of Physics

    Prof. Dr. Markus Weyers

  366. Optical polarization of UV-A and UV-B (In)(Al)GaN multiple quantum well light-emitting diodes

    Article • February 2011, SPIE

    Prof. Dr. Markus Weyers

  367. Impact of band structure and transition matrix elements on polarization properties of the photoluminescence of semipolar and nonpolar InGaN quantum wells

    Article • physica status solidi (b), February 2011, Wiley

    Prof. Dr. Markus Weyers

  368. 1W semiconductor based laser module with a narrow linewidth emitting near 1064nm

    Article • February 2011, SPIE

    Prof. Dr. Markus Weyers

  369. Surface morphology of homoepitaxial GaN grown on non- and semipolar GaN substrates

    Article • physica status solidi (b), January 2011, Wiley

    Prof. Dr. Markus Weyers

  370. Characterization and optimization of 2-step MOVPE growth for single-mode DFB or DBR laser diodes

    Article • Journal of Crystal Growth, January 2011, Elsevier

    Dr Olaf Brox, Dr Frank Bugge, Prof. Dr. Markus Weyers

  371. High-power edge-emitting laser diode with narrow vertical beam divergence

    Article • Electronics Letters, January 2011, the Institution of Engineering and Technology (the IET)

    Dr Frank Bugge, Prof. Dr. Markus Weyers

  372. Growth of AlGaN and AlN on patterned AlN/sapphire templates

    Article • Journal of Crystal Growth, January 2011, Elsevier

    Prof. Dr. Markus Weyers

  373. Uniformity of the wafer surface temperature during MOVPE growth of GaN-based laser diode structures on GaN and sapphire substrate

    Article • Journal of Crystal Growth, January 2011, Elsevier

    Prof. Dr. Markus Weyers

  374. Growth and characterization of heavily selenium doped GaAs using MOVPE

    Article • Journal of Crystal Growth, January 2011, Elsevier

    Prof. Dr. Markus Weyers

  375. (Invited) High Voltage Normally-Off Transistors and Efficient Schottky Diodes based on GaN Technology

    Article • January 2011, The Electrochemical Society

    Prof. Dr. Markus Weyers

  376. Application of GaN-based ultraviolet-C light emitting diodes – UV LEDs – for water disinfection

    Article • Water Research, January 2011, Elsevier

    Prof. Dr. Markus Weyers

  377. AlGaN-based Ultraviolet Lasers - Applications and Materials Challenges

    Article • January 2011, Optical Society of America (OSA)

    Prof. Dr. Markus Weyers

  378. Advances in group III-nitride-based deep UV light-emitting diode technology

    Article • Semiconductor Science and Technology, December 2010, Institute of Physics Publishing

    Prof. Dr. Markus Weyers

  379. Well width study of InGaN multiple quantum wells for blue–green emitter

    Article • Journal of Crystal Growth, November 2010, Elsevier

    Prof. Dr. Markus Weyers

  380. GaN-based ultraviolet light-emitting diodes with multifinger contacts

    Article • physica status solidi (a), November 2010, Wiley

    Prof. Dr. Markus Weyers

  381. Tilted waveguide and PBC lasers: Novel cavity designs for narrow far-fields and high brightness

    Article • November 2010, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr. Markus Weyers

  382. Optical polarization characteristics of ultraviolet (In)(Al)GaN multiple quantum well light emitting diodes

    Article • Applied Physics Letters, October 2010, American Institute of Physics

    Prof. Dr. Markus Weyers

  383. Improving the modulation efficiency of high-power distributed Bragg reflector tapered diode lasers

    Article • Applied Physics B Photophysics and Laser Chemistry, September 2010, Springer Science + Business Media

    Prof. Dr. Markus Weyers

  384. Broad-area lasers with internal surface Bragg gratings for wavelength stabilization at 980nm

    Article • September 2010, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Frank Bugge, Prof. Dr. Markus Weyers

  385. Hydride vapor phase epitaxy of GaN boules using high growth rates

    Article • Journal of Crystal Growth, September 2010, Elsevier

    Prof. Dr. Markus Weyers

  386. Orientation control of GaN and grown on sapphire by metal-organic vapor phase epitaxy

    Article • Journal of Crystal Growth, July 2010, Elsevier

    Prof. Dr. Markus Weyers

  387. Effects of low charge carrier wave function overlap on internal quantum efficiency in GaInN quantum wells

    Article • physica status solidi c, June 2010, Wiley

    Prof. Dr. Markus Weyers

  388. (In)AlGaN deep ultraviolet light emitting diodes with optimized quantum well width

    Article • physica status solidi (a), June 2010, Wiley

    Prof. Dr. Markus Weyers

  389. High-Power Pulse Generation in GHz Range With 1064-nm DBR Tapered Laser

    Article • IEEE Photonics Technology Letters, June 2010, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr. Markus Weyers

  390. Facet formation for laser diodes on nonpolar and semipolar GaN

    Article • physica status solidi (a), May 2010, Wiley

    Prof. Dr. Markus Weyers

  391. InGaN–GaN Disk Laser for Blue-Violet Emission Wavelengths

    Article • IEEE Photonics Technology Letters, May 2010, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr. Markus Weyers

  392. Carrier injection in InAlGaN single and multi-quantum-well ultraviolet light emitting diodes

    Article • physica status solidi c, April 2010, Wiley

    Prof. Dr. Markus Weyers

  393. Optical and Structural Properties of In0.08GaN/In0.02GaN Multiple Quantum Wells Grown at Different Temperatures and with Different Indium Supplies

    Article • Journal of Electronic Materials, March 2010, Springer Science + Business Media

    Prof. Dr. Markus Weyers

  394. Laser Scribing for Facet Fabrication of InGaN MQW Diode Lasers on Sapphire Substrates

    Article • IEEE Photonics Technology Letters, March 2010, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr. Markus Weyers

  395. Structure investigations of nonpolar GaN layers

    Article • Journal of Microscopy, March 2010, Wiley

    Prof. Dr. Markus Weyers

  396. High-Power 980-nm Broad-Area Lasers Spectrally Stabilized by Surface Bragg Gratings

    Article • IEEE Photonics Technology Letters, March 2010, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr. Markus Weyers

  397. Enhancement of light extraction in ultraviolet light-emitting diodes using nanopixel contact design with Al reflector

    Article • Applied Physics Letters, February 2010, American Institute of Physics

    Prof. Dr. Markus Weyers

  398. High-power distributed-feedback tapered master-oscillator power amplifiers emitting at 1064 nm

    Article • February 2010, SPIE

    Dr Olaf Brox, Dr Frank Bugge, Prof. Dr. Markus Weyers

  399. High-power high-brightness semiconductor lasers based on novel waveguide concepts

    Article • February 2010, SPIE

    Prof. Dr. Markus Weyers

  400. Comparison of 650 nm tapered lasers with different lateral geometries at output powers up to 1 W

    Article • February 2010, SPIE

    Prof. Dr. Markus Weyers

  401. High-peak-power pulse generation with GHz repetition rate using a Q-switched 1060nm DBR tapered laser

    Article • February 2010, SPIE

    Prof. Dr. Markus Weyers

  402. Temperature and excitation power dependent photoluminescence intensity of GaInN quantum wells with varying charge carrier wave function overlap

    Article • Journal of Applied Physics, February 2010, American Institute of Physics

    Prof. Dr. Markus Weyers

  403. Polarization of eigenmodes in laser diode waveguides on semipolar and nonpolar GaN

    Article • physica status solidi (RRL) - Rapid Research Letters, February 2010, Wiley

    Prof. Dr. Markus Weyers

  404. Boule-like growth of GaN by HVPE

    Article • physica status solidi c, January 2010, Wiley

    Prof. Dr. Markus Weyers

  405. Megahertz monocrystalline optomechanical resonators with minimal dissipation

    Article • January 2010, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr. Markus Weyers

  406. Compositional dependence of the bowing parameter for highly strained InGaAs/GaAs quantum wells

    Article • Physical Review B, October 2009, American Physical Society (APS)

    Prof. Dr. Markus Weyers

  407. Tapered lasers emitting at 650 nm with 1 W output power with nearly diffraction-limited beam quality

    Article • Optics Letters, August 2009, Optical Society of America (OSA)

    Prof. Dr. Markus Weyers

  408. Mode-locked InGaAs-AlGaAs disk laser generating sub-200-fs pulses, pulse picking and amplification by a tapered diode amplifier

    Article • Optics Express, June 2009, Optical Society of America (OSA)

    Prof. Dr. Markus Weyers

  409. 190-fs semiconductor disk laser and tapered diode amplifier with ultrafast pulse picking

    Article • June 2009, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr. Markus Weyers

  410. 12.2 W output power from 1060 nm DBR tapered lasers with narrow spectral line width and nearly diffraction limited beam quality

    Article • June 2009, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr. Markus Weyers

  411. Limitations to peak continuous wave power in high power broad area single emitter 980 nm diode lasers

    Article • June 2009, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr. Markus Weyers

  412. High-power 808 nm ridge-waveguide diode lasers with very small divergence, wavelength-stabilized by an external volume Bragg grating

    Article • Optics Letters, May 2009, Optical Society of America (OSA)

    Prof. Dr. Markus Weyers

  413. Epitaxial lateral overgrowth on (21¯1¯0) a-plane GaN with [01¯11]-oriented stripes

    Article • Journal of Crystal Growth, May 2009, Elsevier

    Prof. Dr. Markus Weyers

  414. Strain engineering of AlGaN-GaN HFETs grown on 3 inch 4H-SiC

    Article • physica status solidi c, February 2009, Wiley

    Prof. Dr. Markus Weyers

  415. Experimental method for scanning the surface depletion region in nitride based heterostructures

    Article • physica status solidi c, February 2009, Wiley

    Prof. Dr. Markus Weyers

  416. HVPE growth of AlxGa1-xN alloy layers

    Article • physica status solidi c, February 2009, Wiley

    Prof. Dr. Markus Weyers

  417. MOVPE growth for UV-LEDs

    Article • February 2009, SPIE

    Prof. Dr. Markus Weyers

  418. 1060 nm DBR tapered lasers with 12 W output power and a nearly diffraction limited beam quality

    Article • February 2009, SPIE

    Prof. Dr. Markus Weyers

  419. 4.5 W hybrid integrated master-oscillator power-amplifier at 976 nm on micro-optical bench

    Article • February 2009, SPIE

    Prof. Dr. Markus Weyers

  420. MOVPE growth of InGaAs/GaAsP-MQWs for high-power laser diodes studied by reflectance anisotropy spectroscopy

    Article • Journal of Crystal Growth, February 2009, Elsevier

    Dr Frank Bugge, Prof. Dr. Markus Weyers

  421. Twin-Contact 645-nm Tapered Laser With 500-mW Output Power

    Article • IEEE Photonics Technology Letters, February 2009, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr. Markus Weyers

  422. Optimization of InGaN/(In,Al,Ga)N based near UV-LEDs by MQW strain balancing with in-situ wafer bow sensor

    Article • phys stat sol (a), February 2009, Wiley

    Prof. Dr. Markus Weyers

  423. Emission characteristics of InGaN multi quantum well light emitting diodes with differently strained InAlGaN barriers

    Article • physica status solidi c, January 2009, Wiley

    Prof. Dr. Markus Weyers

  424. High-Brightness and Ultranarrow-Beam 850-nm GaAs/AlGaAs Photonic Band Crystal Lasers and Single-Mode Arrays

    Article • IEEE Journal of Selected Topics in Quantum Electronics, January 2009, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr. Markus Weyers

  425. High-Brightness Quantum Well Tapered Lasers

    Article • IEEE Journal of Selected Topics in Quantum Electronics, January 2009, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr. Markus Weyers

  426. High-Power DBR-Tapered Laser at 980 nm for Single-Path Second Harmonic Generation

    Article • IEEE Journal of Selected Topics in Quantum Electronics, January 2009, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr. Markus Weyers

  427. Sub-200-fs Passively Mode-Locked Semiconductor Disk Laser

    Article • January 2009, Optical Society of America (OSA)

    Prof. Dr. Markus Weyers

  428. Ultrahigh-brightness 850 nm GaAs/AlGaAs photonic crystal laser diodes

    Article • Applied Physics Letters, December 2008, American Institute of Physics

    Prof. Dr. Markus Weyers

  429. TEM study of c-plane GaN layers grown on γ-LiAlO2(100)

    Article • physica status solidi c, December 2008, Wiley

    Prof. Dr. Markus Weyers

  430. In-situ etching of GaAs/AlxGa1−xAs by CBr4

    Article • Journal of Crystal Growth, November 2008, Elsevier

    Prof. Dr. Markus Weyers

  431. Growth parameter optimization of the GaInP/AlGaInP active zone of 635nm red laser diodes

    Article • Journal of Crystal Growth, November 2008, Elsevier

    Prof. Dr. Markus Weyers

  432. Semiconductor components for femtosecond semiconductor disk lasers grown by MOVPE

    Article • Journal of Crystal Growth, November 2008, Elsevier

    Prof. Dr. Markus Weyers

  433. Effect of the AIN nucleation layer growth on AlN material quality

    Article • Journal of Crystal Growth, November 2008, Elsevier

    Prof. Dr. Markus Weyers

  434. Conductively Cooled 637-nm InGaP Broad-Area Lasers and Laser Bars With Conversion Efficiencies Up to 37% and a Small Vertical Far Field of 30$^{\circ}$

    Article • IEEE Photonics Technology Letters, November 2008, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr. Markus Weyers

  435. Influence of MOVPE growth temperature on the structural and optical properties of InGaN MQW laser diodes

    Article • Journal of Crystal Growth, October 2008, Elsevier

    Prof. Dr. Markus Weyers

  436. 5-W DBR Tapered Lasers Emitting at 1060 nm With a Narrow Spectral Linewidth and a Nearly Diffraction-Limited Beam Quality

    Article • IEEE Photonics Technology Letters, October 2008, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr. Markus Weyers

  437. High brightness and ultra-narrow beam 850 nm GaAs/AlGaAs photonic band crystal lasers and first uncoupled PBC single-mode arrays

    Article • September 2008, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr. Markus Weyers

  438. High-power single-frequency operation of a DBR tapered laser

    Article • September 2008, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr. Markus Weyers

  439. Microscopic recombination kinetics in high quality, fully coalesced a-plane GaN ELO structures investigated by ps-time-resolved cathodoluminescence microscopy

    Article • August 2008, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr. Markus Weyers

  440. 2MeV ion irradiation effects on AlGaN/GaN HFET devices

    Article • Solid-State Electronics, July 2008, Elsevier

    Prof. Dr. Markus Weyers

  441. A-plane GaN epitaxial lateral overgrowth structures: Growth domains, morphological defects, and impurity incorporation directly imaged by cathodoluminescence microscopy

    Article • Applied Physics Letters, May 2008, American Institute of Physics

    Prof. Dr. Markus Weyers

  442. Effect of the barrier composition on the polarization fields in near UV InGaN light emitting diodes

    Article • Applied Physics Letters, May 2008, American Institute of Physics

    Prof. Dr. Markus Weyers

  443. Quantitative analysis of in situ wafer bowing measurements for III-nitride growth on sapphire

    Article • Journal of Crystal Growth, May 2008, Elsevier

    Prof. Dr. Markus Weyers

  444. Semipolar GaN grown on m-plane sapphire using MOVPE

    Article • physica status solidi c, May 2008, Wiley

    Prof. Dr. Markus Weyers

  445. High-temperature growth of AlN in a production scale 11 × 2′ MOVPE reactor

    Article • physica status solidi c, May 2008, Wiley

    Prof. Dr. Markus Weyers

  446. Passively mode-locked semiconductor disk laser generating sub-300-fs pulses

    Article • May 2008, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr. Markus Weyers

  447. Structural and optical properties of nonpolar GaN thin films

    Article • Applied Physics Letters, April 2008, American Institute of Physics

    Prof. Dr. Markus Weyers

  448. 290-fs pulses from a semiconductor disk laser

    Article • Optics Express, April 2008, Optical Society of America (OSA)

    Prof. Dr. Markus Weyers

  449. 5.6-W Broad-Area Lasers With a Vertical Far-Field Angle of 31$^{\circ}$ Emitting at 670 nm

    Article • IEEE Photonics Technology Letters, April 2008, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr. Markus Weyers

  450. Microstructure of a-plane ( $$2\bar{1}\bar{1}0$$ ) GaN ELOG stripe patterns with different in-plane orientation

    Article • Journal of Materials Science Materials in Electronics, March 2008, Springer Science + Business Media

    Prof. Dr. Markus Weyers

  451. Freestanding 2-in GaN layers using lateral overgrowth with HVPE

    Article • Journal of Crystal Growth, March 2008, Elsevier

    Prof. Dr. Markus Weyers

  452. High-Power Monolithic Two-Mode DFB Laser Diodes for the Generation of THz Radiation

    Article • IEEE Journal of Selected Topics in Quantum Electronics, March 2008, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr. Markus Weyers

  453. Integrated 1060nm MOPA pump source for high-power green light emitters in display technology

    Article • February 2008, SPIE

    Dr Olaf Brox, Prof. Dr. Markus Weyers

  454. 1 W reliable operation of broad area lasers and 8 W reliable operation of 5 mm wide laser bars at 650 nm

    Article • February 2008, SPIE

    Prof. Dr. Markus Weyers

  455. GaN substrates by HVPE

    Article • February 2008, SPIE

    Prof. Dr. Markus Weyers

  456. 650 nm tapered lasers with 1 W maximum output power and nearly diffraction limited beam quality at 500 mW

    Article • February 2008, SPIE

    Prof. Dr. Markus Weyers

  457. High-brightness diode lasers with very narrow vertical divergence

    Article • February 2008, SPIE

    Prof. Dr. Markus Weyers

  458. Irradiation effects on AlGaN HFET devices and GaN layers

    Article • Journal of Materials Science Materials in Electronics, February 2008, Springer Science + Business Media

    Prof. Dr. Markus Weyers

  459. Fundamental-Lateral Mode Stabilized High-Power Ridge-Waveguide Lasers With a Low Beam Divergence

    Article • IEEE Photonics Technology Letters, February 2008, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr. Markus Weyers

  460. Anisotropic strain on phonons in a-plane GaN layers studied by Raman scattering

    Article • Journal of Materials Science Materials in Electronics, January 2008, Springer Science + Business Media

    Prof. Dr. Markus Weyers

  461. Near band edge and defect emissions from epitaxial lateral overgrown a-plane GaN with different stripe orientations

    Article • Journal of Crystal Growth, January 2008, Elsevier

    Prof. Dr. Markus Weyers

  462. 12 W high-brightness single-frequency DBR tapered diode laser

    Article • Electronics Letters, January 2008, the Institution of Engineering and Technology (the IET)

    Prof. Dr. Markus Weyers

  463. Study of in-depth strain variation in ion-irradiated GaN

    Article • Journal of Materials Science Materials in Electronics, December 2007, Springer Science + Business Media

    Prof. Dr. Markus Weyers

  464. High energy irradiation effects on AlGaN/GaN HFET devices

    Article • Semiconductor Science and Technology, October 2007, Institute of Physics Publishing

    Prof. Dr. Markus Weyers

  465. Monolithic high brightness diode lasers: results and developments at FBH

    Article • October 2007, SPIE

    Prof. Dr. Markus Weyers

  466. Influence of the barrier composition on the light output of InGaN multiple-quantum-well ultraviolet light emitting diodes

    Article • September 2007, SPIE

    Prof. Dr. Markus Weyers

  467. X-ray diffraction spot mapping - a tool to study structural properties of semiconductor disk laser devices

    Article • phys stat sol (a), August 2007, Wiley

    Prof. Dr. Markus Weyers

  468. Mechanism of LiAlO2 decomposition during the GaN growth on (100) γ-LiAlO2

    Article • Journal of Applied Physics, July 2007, American Institute of Physics

    Prof. Dr. Markus Weyers

  469. Self-separation of thick two inch GaN layers grown by HVPE on sapphire using epitaxial lateral overgrowth with masks containing tungsten

    Article • physica status solidi c, June 2007, Wiley

    Prof. Dr. Markus Weyers

  470. Optimization of HVPE growth of freestanding c-plane GaN layers using (100) γ-LiAlO2 substrates

    Article • physica status solidi c, June 2007, Wiley

    Prof. Dr. Markus Weyers

  471. 5.5 W output power from 100 μm stripe width lasers at 670 nm with a vertical far-field angle of 32 degrees

    Article • June 2007, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr. Markus Weyers

  472. Optically pumped semiconductor disk laser with graded and step indices for cw and ultrashort pulse generation

    Article • June 2007, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr. Markus Weyers

  473. Fundamental-lateral mode stabilized high-power ridge-waveguide lasers

    Article • June 2007, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr. Markus Weyers

  474. High power monolithic two mode DFB laser diodes for the generation of terahertz radiation

    Article • June 2007, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr. Markus Weyers

  475. High power pulse generation from a 10mm long monolithic multi section mode locked semiconductor laser at 920nm

    Article • June 2007, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr. Markus Weyers

  476. High-power 980-nm monolithically integrated master-oscillator power-amplifier

    Article • June 2007, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr. Markus Weyers

  477. High-power hybrid integrated master-oscillator power-amplifier on micro-optical bench at 980-nm

    Article • June 2007, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr. Markus Weyers

  478. Five-hundred-milliwatts distributed-feedback diode laser emitting at 940nm

    Article • Optics & Laser Technology, March 2007, Elsevier

    Dr Frank Bugge, Prof. Dr. Markus Weyers

  479. Red luminescence from freestanding GaN grown on LiAlO2substrate by hydride vapor phase epitaxy

    Article • phys stat sol (a), March 2007, Wiley

    Prof. Dr. Markus Weyers

  480. 670 nm tapered lasers and amplifier with output powers P ⩾ 1 W and nearly diffraction limited beam quality

    Article • February 2007, SPIE

    Prof. Dr. Markus Weyers

  481. Comprehensive study of (Al)GaAs Si-doping using reflectance anisotropy spectroscopy in metal-organic vapour-phase epitaxy

    Article • Journal of Physics D Applied Physics, January 2007, Institute of Physics Publishing

    Prof. Dr. Markus Weyers

  482. 10 W continuous-wave monolithically integrated master-oscillator power-amplifier

    Article • Electronics Letters, January 2007, the Institution of Engineering and Technology (the IET)

    Dr Olaf Brox, Prof. Dr. Markus Weyers

  483. MOVPE growth optimization for laser diodes with highly strained InGaAs MQWs

    Article • Journal of Crystal Growth, January 2007, Elsevier

    Dr Frank Bugge, Prof. Dr. Markus Weyers

  484. AlGaInP growth parameter optimisation during MOVPE for opto-electronic devices

    Article • Journal of Crystal Growth, January 2007, Elsevier

    Prof. Dr. Markus Weyers

  485. Segregation and desorption of antimony in InP (001) in MOVPE

    Article • Journal of Crystal Growth, January 2007, Elsevier

    Prof. Dr. Markus Weyers

  486. Growth optimization during III-nitride multiwafer MOVPE using real-time curvature, reflectance and true temperature measurements

    Article • Journal of Crystal Growth, January 2007, Elsevier

    Prof. Dr. Markus Weyers

  487. High-power red laser diodes grown by MOVPE

    Article • Journal of Crystal Growth, January 2007, Elsevier

    Prof. Dr. Markus Weyers

  488. 650-nm InGaP Broad Area Lasers With 5000-h Reliable Operation at 600 mW

    Article • IEEE Photonics Technology Letters, January 2007, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr. Markus Weyers

  489. 3-W Broad Area Lasers and 12-W Bars With Conversion Efficiencies up to 40% at 650 nm

    Article • IEEE Journal of Selected Topics in Quantum Electronics, January 2007, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr. Markus Weyers

  490. Ultrashort pulse Yb:LaSc_3(BO_3)_4 mode-locked oscillator

    Article • Optics Express, January 2007, Optical Society of America (OSA)

    Prof. Dr. Markus Weyers

  491. 9-W Output Power From an 808-nm Tapered Diode Laser in Pulse Mode Operation With Nearly Diffraction-Limited Beam Quality

    Article • IEEE Journal of Selected Topics in Quantum Electronics, January 2007, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr. Markus Weyers

  492. Proton and Heavy Ion Irradiation Effects on AlGaN/GaN HFET Devices

    Article • IEEE Transactions on Nuclear Science, December 2006, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr. Markus Weyers

  493. Optically pumped semiconductor disk laser with graded and step indices

    Article • Applied Physics Letters, October 2006, American Institute of Physics

    Prof. Dr. Markus Weyers

  494. Exciton resonance tuning for the generation of subpicosecond pulses from a mode-locked semiconductor disk laser

    Article • Applied Physics Letters, October 2006, American Institute of Physics

    Prof. Dr. Markus Weyers

  495. 5-W Reliable Operation Over 2000 h of 5-mm-Wide 650-nm AlGaInP–GaInP–AlGaAs Laser Bars With Asymmetric Cladding Layers

    Article • IEEE Photonics Technology Letters, September 2006, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr. Markus Weyers

  496. Feedback controlled growth of strain-balanced InGaAs multiple quantum wells in metal-organic vapour phase epitaxy using an in situ curvature sensor

    Article • Semiconductor Science and Technology, July 2006, Institute of Physics Publishing

    Prof. Dr. Markus Weyers

  497. Freestanding two inch c-plane GaN layers grown on (100) γ-lithium aluminium oxide by hydride vapour phase epitaxy

    Article • physica status solidi c, June 2006, Wiley

    Prof. Dr. Markus Weyers

  498. Bowing of thick GaN layers grown by HVPE using ELOG

    Article • physica status solidi c, June 2006, Wiley

    Prof. Dr. Markus Weyers

  499. High and low energy proton irradiation effects on AlGaN/GaN HFETs

    Article • physica status solidi c, June 2006, Wiley

    Prof. Dr. Markus Weyers

  500. N-type doping of HVPE-grown GaN using dichlorosilane

    Article • phys stat sol (a), May 2006, Wiley

    Prof. Dr. Markus Weyers

  501. Characterization of free standing GaN grown by HVPE on a LiAlO2substrate

    Article • phys stat sol (a), May 2006, Wiley

    Prof. Dr. Markus Weyers

  502. High power single mode 980nm DBR tapered diode lasers with integrated sixth order surface gratings based on simplified fabrication process

    Article • April 2006, SPIE

    Prof. Dr. Markus Weyers

  503. Laser diodes with narrow vertical far firlds

    Article • physica status solidi c, March 2006, Wiley

    Dr Frank Bugge, Prof. Dr. Markus Weyers

  504. High-power 980-nm DFB RW lasers with a narrow vertical far field

    Article • IEEE Photonics Technology Letters, March 2006, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr. Markus Weyers

  505. High-efficient 650 nm laser bars with an output power of about 10 W and a wall-plug efficiency of 30%

    Article • February 2006, SPIE

    Prof. Dr. Markus Weyers

  506. High-power broad-area 808 nm DFB lasers for pumping solid state lasers

    Article • February 2006, SPIE

    Prof. Dr. Markus Weyers

  507. High-power 808-nm tapered diode lasers with nearly diffraction-limited beam quality of M/sup 2/=1.9 at P=4.4 W

    Article • IEEE Photonics Technology Letters, February 2006, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr. Markus Weyers

  508. In situ determination and control of AlGaInP composition during MOVPE growth

    Article • Journal of Crystal Growth, January 2006, Elsevier

    Prof. Dr. Markus Weyers

  509. Avoidance of surface-related defects in MOVPE-grown InGaP layers

    Article • Journal of Crystal Growth, January 2006, Elsevier

    Prof. Dr. Markus Weyers

  510. Optically pumped surface-emitting semiconductor disk lasers with high spatial and spectral homogeneity

    Article • January 2006, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr. Markus Weyers

  511. Passively mode-locked Yb:LuVO4oscillator

    Article • Optics Express, January 2006, Optical Society of America (OSA)

    Prof. Dr. Markus Weyers

  512. 9 W Output Power from a 808 nm Tapered Diode Laser in Pulse Mode Operation with Nearly Diffraction-Limited Beam Quality

    Article • January 2006, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr. Markus Weyers

  513. Carrier dynamics in laterally strain-modulated InGaAs quantum wells

    Article • Applied Physics Letters, December 2005, American Institute of Physics

    Prof. Dr. Markus Weyers

  514. Optical in-well pumping of a semiconductor disk laser with high optical efficiency

    Article • IEEE Journal of Quantum Electronics, December 2005, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr. Markus Weyers

  515. 980-nm DBR lasers using higher order gratings defined by i-line lithography

    Article • Semiconductor Science and Technology, October 2005, Institute of Physics Publishing

    Prof. Dr. Markus Weyers

  516. Mode-locked laser operation of epitaxially grown Yb:KLu(WO_4)_2 composites

    Article • Optics Letters, September 2005, Optical Society of America (OSA)

    Prof. Dr. Markus Weyers

  517. High-power high-efficiency 1150-nm quantum-well laser

    Article • IEEE Journal of Selected Topics in Quantum Electronics, September 2005, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Frank Bugge, Prof. Dr. Markus Weyers

  518. HigHighly strained InGaAs/GaAs quantum wells emitting beyond 1.2 µm

    Article • Crystal Research and Technology, September 2005, Wiley

    Prof. Dr. Markus Weyers

  519. Optimised two layer overgrowth of a lateral strain-modulated nanostructure

    Article • Journal of Alloys and Compounds, September 2005, Elsevier

    Prof. Dr. Markus Weyers

  520. Blue 489-nm picosecond pulses generated by intracavity frequency doubling in a passively mode-locked optically pumped semiconductor disk laser

    Article • Applied Physics B Photophysics and Laser Chemistry, July 2005, Springer Science + Business Media

    Prof. Dr. Markus Weyers

  521. High-performance laser diodes with emission wavelengths above 1100 nm and very small vertical divergence of the far field

    Article • IEEE Photonics Technology Letters, June 2005, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Frank Bugge, Prof. Dr. Markus Weyers

  522. Growth optimization for thick crack-free GaN layers on sapphire with HVPE

    Article • physica status solidi c, May 2005, Wiley

    Prof. Dr. Markus Weyers

  523. High-power 808 nm lasers with a super-large optical cavity

    Article • Semiconductor Science and Technology, April 2005, Institute of Physics Publishing

    Prof. Dr. Markus Weyers

  524. Growth of strained GaAsSb layers on GaAs (001) by MOVPE

    Article • Journal of Crystal Growth, April 2005, Elsevier

    Prof. Dr. Markus Weyers

  525. Reactor and growth process optimization for growth of thick GaN layers on sapphire substrates by HVPE

    Article • Journal of Crystal Growth, April 2005, Elsevier

    Prof. Dr. Markus Weyers

  526. High-power ridge-wavequide broad-area lasers with a DFB resonator in the wavelength range 760- to 790-nm

    Article • April 2005, SPIE

    Prof. Dr. Markus Weyers

  527. Application of reflectance anisotropy spectroscopy to laser diode growth in MOVPE

    Article • Journal of Crystal Growth, March 2005, Elsevier

    Prof. Dr. Markus Weyers

  528. Comprehensive characterization of MOVPE-grown AlGaAs/AlAs distributed Bragg reflector structures by optical reflectance, X-ray diffraction and atomic force microscopy

    Article • Journal of Crystal Growth, February 2005, Elsevier

    Dr Frank Bugge, Prof. Dr. Markus Weyers

  529. Passively cooled 940 nm laser bars with 73% wall-plug efficiency at 70 W and 25°C

    Article • Electronics Letters, January 2005, the Institution of Engineering and Technology (the IET)

    Prof. Dr. Markus Weyers

  530. Passively mode-locked Yb:KLu(WO4)2 oscillators

    Article • Optics Express, January 2005, Optical Society of America (OSA)

    Prof. Dr. Markus Weyers

  531. Design and realization of high-power DFB lasers

    Article • December 2004, SPIE

    Prof. Dr. Markus Weyers

  532. Interdiffusion in highly strained InGaAs-QWs for high power laser diode applications

    Article • Journal of Crystal Growth, December 2004, Elsevier

    Dr Frank Bugge, Prof. Dr. Markus Weyers

  533. Defect study of MOVPE-grown InGaP layers on GaAs

    Article • Journal of Crystal Growth, December 2004, Elsevier

    Prof. Dr. Markus Weyers

  534. Growth monitoring of GaAsSb:C/InP heterostructures with reflectance anisotropy spectroscopy

    Article • Journal of Crystal Growth, December 2004, Elsevier

    Prof. Dr. Markus Weyers

  535. Investigation of Breakdown and DC Behavior in HBTs With (Al,Ga)As Collector Layer

    Article • IEEE Electron Device Letters, October 2004, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr. Markus Weyers

  536. Determination of band offsets in strainedInxGa1−xAs∕GaAsquantum wells by capacitance-voltage profiling and Schrödinger-Poisson self-consistent simulation

    Article • Physical Review B, August 2004, American Physical Society (APS)

    Prof. Dr. Markus Weyers

  537. Nonequilibrium carrier dynamics in heavily p-doped GaAs

    Article • The European Physical Journal Applied Physics, July 2004, EDP Sciences

    Prof. Dr. Markus Weyers

  538. Interlayer formation due to group V-hydride stabilization during interruptions of MOVPE growth of InGaP

    Article • Semiconductor Science and Technology, April 2004, Institute of Physics Publishing

    Prof. Dr. Markus Weyers

  539. Nanoengineering of lateral strain modulation in quantum well heterostructures

    Article • Physical Review B, March 2004, American Physical Society (APS)

    Prof. Dr. Markus Weyers

  540. In situ study of GaAs growth mechanisms using tri-methyl gallium and tri-ethyl gallium precursors in metal-organic vapour phase epitaxy

    Article • Journal of Crystal Growth, February 2004, Elsevier

    Prof. Dr. Markus Weyers

  541. Properties of As+-implanted and annealed GaAs and InGaAs quantum wells: Structural and band-structure modifications

    Article • Journal of Applied Physics, February 2004, American Institute of Physics

    Prof. Dr. Markus Weyers

  542. High-power 783 nm distributed-feedback laser

    Article • Electronics Letters, January 2004, the Institution of Engineering and Technology (the IET)

    Dr Frank Bugge, Prof. Dr. Markus Weyers

  543. Investigation of short-term current gain stability of GaInP/GaAs-HBTs grown by MOVPE

    Article • Microelectronics Reliability, June 2003, Elsevier

    Prof. Dr. Markus Weyers

  544. High-efficiency AlGaInP/AlGaAs vertical-cavity surface-emitting lasers with 650 nm wavelength

    Article • IEE Proceedings - Optoelectronics, April 2003, the Institution of Engineering and Technology (the IET)

    Prof. Dr. Markus Weyers

  545. In situ analysis of a vertical-cavity surface-emitting laser active layer by two-photon spectroscopy

    Article • Optical Engineering, April 2003, SPIE

    Prof. Dr. Markus Weyers

  546. Highly strained very high-power laser diodes with InGaAs QWs

    Article • Journal of Crystal Growth, February 2003, Elsevier

    Dr Frank Bugge, Prof. Dr. Markus Weyers

  547. MOVPE growth of visible vertical-cavity surface-emitting lasers (VCSELs)

    Article • Journal of Crystal Growth, February 2003, Elsevier

    Prof. Dr. Markus Weyers

  548. In-situ determination of interface roughness in MOVPE-grown visible VCSELs by reflectance spectroscopy

    Article • Journal of Crystal Growth, February 2003, Elsevier

    Prof. Dr. Markus Weyers

  549. Automated emissivity corrected wafer-temperature measurement in Aixtrons planetary reactors

    Article • Journal of Crystal Growth, February 2003, Elsevier

    Prof. Dr. Markus Weyers

  550. Preface

    Article • Journal of Crystal Growth, February 2003, Elsevier

    Prof. Dr. Markus Weyers

  551. Properties of (In,Ga)(As,P)/GaAs interfaces grown under different metalorganic vapor phase epitaxy conditions

    Article • Journal of Crystal Growth, February 2003, Elsevier

    Prof. Dr. Markus Weyers

  552. Influence of lateral patterning geometry on lateral carrier confinement in strain-modulated InGaAs-nanostructures

    Article • phys stat sol (a), January 2003, Wiley

    Prof. Dr. Markus Weyers

  553. Femtosecond excitation cavity studies and superluminescence by two-photon absorption in vertical cavity lasers at 300 K

    Article • December 2002, American Physical Society (APS)

    Prof. Dr. Markus Weyers

  554. 650-nm vertical-cavity surface-emitting lasers: laser properties and reliability investigations

    Article • IEEE Photonics Technology Letters, October 2002, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr. Markus Weyers

  555. High-power highly strained InGaAs quantum-well lasers operating at 1.2 μm

    Article • IEEE Photonics Technology Letters, July 2002, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr. Markus Weyers

  556. Behavior of the Fermi-edge singularity in the photoluminescence spectra of a high-density two-dimensional electron gas

    Article • June 2002, American Physical Society (APS)

    Prof. Dr. Markus Weyers

  557. Minority-carrier kinetics in heavily doped GaAs:C studied by transient photoluminescence

    Article • Journal of Applied Physics, April 2002, American Institute of Physics

    Prof. Dr. Markus Weyers

  558. Real-time calibration of wafer temperature, growth rate and composition by optical in-situ techniques during AlxGa1−xAs growth in MOVPE

    Article • Journal of Crystal Growth, April 2002, Elsevier

    Prof. Dr. Markus Weyers

  559. The impact of defects to minority-carrier dynamics in heavily doped GaAs:C analyzed by transient photoluminescence spectroscopy

    Article • Materials Science and Engineering B, April 2002, Elsevier

    Prof. Dr. Markus Weyers

  560. MOVPE process development for 650nm VCSELS using optical in-situ techniques

    Article • Journal of Crystal Growth, February 2002, Elsevier

    Prof. Dr. Markus Weyers

  561. High-performance vertical-cavity surface-emitting lasers with emission wavelength between 650 and 670 nm

    Article • Electronics Letters, January 2002, the Institution of Engineering and Technology (the IET)

    Prof. Dr. Markus Weyers

  562. Article • Journal of Materials Science Materials in Electronics, January 2002, Springer Science + Business Media

    Prof. Dr. Markus Weyers

  563. In-situ Determination of the Carrier Concentration of (001) GaAs by Reflectance Anisotropy Spectroscopy

    Article • phys stat sol (a), December 2001, Wiley

    Prof. Dr. Markus Weyers

  564. Direct Growth of GaN on (0001) Sapphire by Low Pressure Hydride Vapour Phase Epitaxy

    Article • phys stat sol (a), November 2001, Wiley

    Prof. Dr. Markus Weyers

  565. Influence of oxygen in AlGaAs-based laser structures with Al-Free active region on device properties

    Article • Journal of Electronic Materials, November 2001, Springer Science + Business Media

    Prof. Dr. Markus Weyers

  566. 12 W continuous-wave diode lasers at 1120 nm with InGaAs quantum wells

    Article • Applied Physics Letters, September 2001, American Institute of Physics

    Prof. Dr. Markus Weyers

  567. Evidence for strain-induced lateral carrier confinement in InGaAs quantum wells by low-temperature near-field spectroscopy

    Article • Applied Physics Letters, September 2001, American Institute of Physics

    Prof. Dr. Markus Weyers

  568. Degradation properties of MOVPE-grown GaInP/GaAs HBTs under combined temperature and current stressing

    Article • Microelectronics Reliability, August 2001, Elsevier

    Prof. Dr. Markus Weyers

  569. Performance of 3-W/100-μm stripe diode laser at 950 and 810 nm

    Article • June 2001, SPIE

    Dr Frank Bugge, Prof. Dr. Markus Weyers

  570. Continuous-wave vertical-cavity surface-emitting lasers with emission wavelengths near 650 nm

    Article • May 2001, SPIE

    Prof. Dr. Markus Weyers

  571. Investigation of strain-modulated InGaAs nanostructures by grazing-incidence x-ray diffraction and photoluminescence

    Article • Journal of Physics D Applied Physics, May 2001, Institute of Physics Publishing

    Prof. Dr. Markus Weyers

  572. Recognition and imitation of pantomimed motor acts after unilateral parietal and premotor lesions: a perspective on apraxia

    Article • Neuropsychologia, February 2001, Elsevier

    Prof. Dr. Markus Weyers

  573. (AlGa)As composition profile analysis of trenches overgrown with MOVPE

    Article • Journal of Crystal Growth, January 2001, Elsevier

    Prof. Dr. Markus Weyers

  574. High efficiency AlGaInP-based 650 nm vertical-cavity surface-emitting lasers

    Article • Electronics Letters, January 2001, the Institution of Engineering and Technology (the IET)

    Prof. Dr. Markus Weyers

  575. High-power highly reliable Al-free 940-nm diode lasers

    Article • IEEE Journal of Selected Topics in Quantum Electronics, January 2001, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr. Markus Weyers

  576. High-power 810-nm GaAsP-AlGaAs diode lasers with narrow beam divergence

    Article • IEEE Journal of Selected Topics in Quantum Electronics, January 2001, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr. Markus Weyers

  577. Optimization of MOVPE growth for 650nm-emitting VCSELs

    Article • Journal of Crystal Growth, December 2000, Elsevier

    Prof. Dr. Markus Weyers

  578. Carbon doping for the GaAs base layer of Heterojunction Bipolar Transistors in a production scale MOVPE reactor

    Article • Journal of Crystal Growth, December 2000, Elsevier

    Prof. Dr. Markus Weyers

  579. Effect of growth conditions and strain compensation on indium incorporation for diode lasers emitting above 1050nm

    Article • Journal of Crystal Growth, December 2000, Elsevier

    Prof. Dr. Markus Weyers

  580. Comparison of binary and ternary growth over trenches using MOVPE

    Article • Journal of Crystal Growth, June 2000, Elsevier

    Prof. Dr. Markus Weyers

  581. MOVPE growth of (Al,Ga)InP-based laser structures monitored by real-time reflectance anisotropy spectroscopy

    Article • Journal of Electronic Materials, April 2000, Springer Science + Business Media

    Prof. Dr. Markus Weyers

  582. Al-free 950-nm BA diode lasers with high efficiency and reliability at 50° C ambient temperature

    Article • March 2000, SPIE

    Prof. Dr. Markus Weyers

  583. Effect of high-temperature annealing on GaInP/GaAs HBT structures grown by LP-MOVPE

    Article • Journal of Electronic Materials, February 2000, Springer Science + Business Media

    Prof. Dr. Markus Weyers

  584. MOVPE growth of AlGaAs/GaInP diode lasers

    Article • Journal of Electronic Materials, January 2000, Springer Science + Business Media

    Dr Frank Bugge, Prof. Dr. Markus Weyers

  585. Optimization of GaAsP/AlGaAs-based QW laser structures for high power 800 nm operation

    Article • Journal of Electronic Materials, January 2000, Springer Science + Business Media

    Dr Frank Bugge, Prof. Dr. Markus Weyers

  586. Modeling and experimental verification of transport and deposition behavior during MOVPE of Ga1-xInxP in the Planetary Reactor

    Article • Journal of Crystal Growth, January 2000, Elsevier

    Prof. Dr. Markus Weyers

  587. MOVPE growth of (Al, Ga)InP-based laser structures monitored by real-time reflectance anisotropy spectroscopy

    Article • Journal of Electronic Materials, January 2000, Springer Science + Business Media

    Prof. Dr. Markus Weyers

  588. Assessment of layer structures for GaInP/GaAs-heterojunction bipolar transistors

    Article • Materials Science and Engineering B, December 1999, Elsevier

    Prof. Dr. Markus Weyers

  589. Patterned growth of (AlGa)As using metalorganic vapor-phase epitaxy

    Article • Journal of Crystal Growth, November 1999, Elsevier

    Prof. Dr. Markus Weyers

  590. Correlation of InGaP(001) surface structure during growth and bulk ordering

    Article • September 1999, American Physical Society (APS)

    Prof. Dr. Markus Weyers

  591. Diode lasers with Al-free quantum wells embedded in LOC AlGaAs waveguides between 715 nm and 840 nm

    Article • April 1999, SPIE

    Prof. Dr. Markus Weyers

  592. High-power tensile-strained GaAsP-AlGaAs quantum-well lasers emitting between 715 and 790 nm

    Article • IEEE Journal of Selected Topics in Quantum Electronics, January 1999, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr. Markus Weyers

  593. MOVPE growth of tunable DBR laser diode emitting at 1060nm

    Article • Journal of Crystal Growth, December 1998, Elsevier

    Dr Frank Bugge, Prof. Dr. Markus Weyers

  594. Ordering in GaxIn1−xAsyP1−y grown on GaAs by metalorganic vapour-phase epitaxy

    Article • Journal of Crystal Growth, December 1998, Elsevier

    Prof. Dr. Markus Weyers

  595. Analysis of Bragg reflectors by lateral photoluminescence spectroscopy

    Article • Materials Science and Technology, December 1998, Taylor & Francis

    Prof. Dr. Markus Weyers

  596. Growth monitoring of GaInP/GaAs heterojunction bipolar transistors by reflectance anisotropy spectroscopy

    Article • Journal of Crystal Growth, December 1998, Elsevier

    Prof. Dr. Markus Weyers

  597. In situ monitoring and control of InGaP growth on GaAs in MOVPE

    Article • Journal of Crystal Growth, December 1998, Elsevier

    Prof. Dr. Markus Weyers

  598. Overgrowth of trenches with (AlGa)As using metalorganic vapor-phase epitaxy (MOVPE)

    Article • Journal of Crystal Growth, December 1998, Elsevier

    Prof. Dr. Markus Weyers

  599. Real-time monitoring of MOVPE device growth by reflectance anisotropy spectroscopy and related optical techniques

    Article • Journal of Crystal Growth, December 1998, Elsevier

    Prof. Dr. Markus Weyers

  600. Photoluminescence on ordered GaxIn1−xAsyP1−y

    Article • Journal of Applied Physics, August 1998, American Institute of Physics

    Prof. Dr. Markus Weyers

  601. MOVPE growth of highly strained InGaAs/GaAs quantum wells

    Article • Journal of Crystal Growth, February 1998, Elsevier

    Dr Frank Bugge, Prof. Dr. Markus Weyers

  602. Real-time growth monitoring of InGaAs/InP-HBT structures with reflectance anisotropy spectroscopy

    Article • Thin Solid Films, February 1998, Elsevier

    Prof. Dr. Markus Weyers

  603. Formation of GaAsP interface layers monitored by reflectance anisotropy spectroscopy

    Article • Journal of Electronic Materials, October 1997, Springer Science + Business Media

    Prof. Dr. Markus Weyers

  604. On-line growth monitoring of InP-based device structures by reflectance anisotropy spectroscopy

    Article • Journal of Electronic Materials, October 1997, Springer Science + Business Media

    Prof. Dr. Markus Weyers

  605. Evaluation of strained InGaAs/GaAs quantum wells by atomic force microscopy

    Article • Applied Physics Letters, March 1997, American Institute of Physics

    Prof. Dr. Markus Weyers

  606. High-resolution X-ray diffraction investigation of crystal perfection and relaxation of GaAs/InGaAs/GaAs quantum wells depending on MOVPE growth conditions

    Article • Il Nuovo Cimento D, February 1997, Springer Science + Business Media

    Dr Frank Bugge, Prof. Dr. Markus Weyers

  607. Crystalline perfection in GaInAsP/GaAs laser structures with GaInP or AlGaAs cladding layers

    Article • Materials Science and Engineering B, February 1997, Elsevier

    Dr Frank Bugge, Prof. Dr. Markus Weyers

  608. Assessment of compensation ratio in high-purity GaAs using photoluminescence

    Article • Materials Science and Engineering B, February 1997, Elsevier

    Prof. Dr. Markus Weyers

  609. Hydrogen in carbon-doped GaAs base layer of GaInP/GaAs heterojunction bipolar transistors

    Article • Materials Science and Engineering B, February 1997, Elsevier

    Prof. Dr. Markus Weyers

  610. Interdiffusion in InGaAs/GaAs and InGaAs/GaAsP quantum wells

    Article • Materials Science and Engineering B, February 1997, Elsevier

    Prof. Dr. Markus Weyers

  611. Influence of the growth temperature and substrate orientation on the layer properties of MOVPE-growth

    Article • Journal of Crystal Growth, January 1997, Elsevier

    Dr Frank Bugge, Prof. Dr. Markus Weyers

  612. Stable operation of InGaAs/InGaP/AlGaAs ( = 1020 nm) laser diodes

    Article • Electronics Letters, January 1997, the Institution of Engineering and Technology (the IET)

    Dr Frank Bugge, Prof. Dr. Markus Weyers

  613. MOVPE growth of hetero-bipolar-transistors using CBr4 as carbon dopant source

    Article • Journal of Crystal Growth, January 1997, Elsevier

    Prof. Dr. Markus Weyers

  614. Growth monitoring by reflectance anisotropy spectroscopy in MOVPE reactors for device fabrication

    Article • Journal of Crystal Growth, January 1997, Elsevier

    Prof. Dr. Markus Weyers

  615. Heat transfer and mass transport in a multiwafer MOVPE reactor: modelling and experimental studies

    Article • Journal of Crystal Growth, January 1997, Elsevier

    Prof. Dr. Markus Weyers

  616. Introduction

    Article • Progress in Crystal Growth and Characterization of Materials, January 1997, Elsevier

    Prof. Dr. Markus Weyers

  617. Temperature dependent EBIC and deep level transient spectroscopy investigation of different types of misfit-dislocations at MOVPE grown GaAs/InGaAs/GaAs-single-quantum wells

    Article • Materials Science and Engineering B, December 1996, Elsevier

    Dr Frank Bugge, Prof. Dr. Markus Weyers

  618. Stability of sulfur-passivated facets of InGaAs-AlGaAs laser diodes

    Article • IEEE Photonics Technology Letters, September 1996, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr. Markus Weyers

  619. Simple method for examining sulphur passivation of facets in InGaAs–AlGaAs (λ=0.98 μm) laser diodes

    Article • Applied Physics Letters, April 1996, American Institute of Physics

    Prof. Dr. Markus Weyers

  620. High-power diode lasers based on InGaAsP spacer and waveguide layers with AlGaAs cladding layers

    Article • April 1996, SPIE

    Prof. Dr. Markus Weyers

  621. Effect of growth temperature on performance of AIGaAs/lnGaAs/GaAs QW laser diodes

    Article • Journal of Electronic Materials, February 1996, Springer Science + Business Media

    Dr Frank Bugge, Prof. Dr. Markus Weyers

  622. In-plane photoluminescence of vertical cavity surface-emitting laser structures

    Article • phys stat sol (a), November 1995, Wiley

    Prof. Dr. Markus Weyers

  623. Carbon doped GaAs grown in low pressure-metalorganic vapor phase epitaxy using carbon tetrabromide

    Article • Journal of Electronic Materials, November 1995, Springer Science + Business Media

    Prof. Dr. Markus Weyers

  624. Metalorganic vapor phase epitaxial growth of GaInAsP/GaAs

    Article • Journal of Electronic Materials, November 1995, Springer Science + Business Media

    Prof. Dr. Markus Weyers

  625. A Comparison of the Growth of GaAs and GaP from Trimethyl-Gallium

    Article • Japanese Journal of Applied Physics, February 1995, Japan Society of Applied Physics

    Prof. Dr. Markus Weyers

  626. Effects of storage time of epi-ready InP:Fe substrates on the quality of metalorganic vapour phase epitaxial grown InP

    Article • Journal of Crystal Growth, January 1995, Elsevier

    Prof. Dr. Markus Weyers

  627. Transport and reaction behaviour in Aix-2000 planetary metalorganic vapour phase epitaxy reactor

    Article • Journal of Crystal Growth, January 1995, Elsevier

    Prof. Dr. Markus Weyers

  628. Potential sources of degradation in InGaAs/GaAs laser diodes

    Article • Materials Science and Engineering B, December 1994, Elsevier

    Dr Frank Bugge, Prof. Dr. Markus Weyers

  629. Effect of growth interruption on performance of AlGaAs/InGaAs/GaAs quantum well lasers

    Article • Journal of Crystal Growth, December 1994, Elsevier

    Prof. Dr. Markus Weyers

  630. Modelling of growth in a 5 X 3 inch multiwafer metalorganic vapour phase epitaxy reactor

    Article • Journal of Crystal Growth, December 1994, Elsevier

    Prof. Dr. Markus Weyers

  631. Growth of GaAsN alloys by low‐pressure metalorganic chemical vapor deposition using plasma‐cracked NH3

    Article • Applied Physics Letters, March 1993, American Institute of Physics

    Prof. Dr. Markus Weyers

  632. Surface chemistry of new As precursors for MOVPE and MOMBE: phenylarsine and tertiarybutylarsine on GaAs(100)

    Article • Journal of Crystal Growth, October 1992, Elsevier

    Prof. Dr. Markus Weyers

  633. Localized deposition of In and Ga in MOMBRE

    Article • Journal of Crystal Growth, September 1992, Elsevier

    Prof. Dr. Markus Weyers

  634. Carbon in III-V Compounds: A Theoretical Approach

    Article • Japanese Journal of Applied Physics, August 1992, Japan Society of Applied Physics

    Prof. Dr. Markus Weyers

  635. Red Shift of Photoluminescence and Absorption in Dilute GaAsN Alloy Layers

    Article • Japanese Journal of Applied Physics, July 1992, Japan Society of Applied Physics

    Prof. Dr. Markus Weyers

  636. Growth of GaP by MOVPE at very low pressure: kinetics and carbon incorporation

    Article • Journal of Crystal Growth, December 1991, Elsevier

    Prof. Dr. Markus Weyers

  637. Adsorption and Decomposition of Organometallics on GaAs Surfaces in Low-Pressure Metalorganic Chemical Vapor Deposition

    Article • Japanese Journal of Applied Physics, November 1991, Japan Society of Applied Physics

    Prof. Dr. Markus Weyers

  638. Epitaxy of III–V semiconductors

    Article • Canadian Journal of Physics, March 1991, Canadian Science Publishing

    Prof. Dr. Markus Weyers

  639. Composition of selectively grown InxGa1−xAs structures from locally resolved Raman spectroscopy

    Article • Journal of Crystal Growth, January 1991, Elsevier

    Prof. Dr. Markus Weyers

  640. Surface chemistry of a new III–V MOCVD reactant: PhAsH2 on GaAs(100)

    Article • Journal of Crystal Growth, January 1991, Elsevier

    Prof. Dr. Markus Weyers

  641. Correlation of carbon incorporation from TEG and effective V/III ratio on the surface in MOMBE grown GaAs

    Article • Journal of Crystal Growth, January 1991, Elsevier

    Prof. Dr. Markus Weyers

  642. Doping of GaAs and InP in MOMBE using DEZn, TESn and DETe

    Article • Journal of Crystal Growth, January 1991, Elsevier

    Prof. Dr. Markus Weyers

  643. New starting materials for MOMBE

    Article • Journal of Crystal Growth, January 1991, Elsevier

    Prof. Dr. Markus Weyers

  644. Gaseous dopant sources in MOMBE/CBE

    Article • Journal of Crystal Growth, October 1990, Elsevier

    Prof. Dr. Markus Weyers

  645. MOMBE of InAs on GaAs

    Article • Journal of Crystal Growth, October 1990, Elsevier

    Prof. Dr. Markus Weyers

  646. Substituted arsines as As sources in MOMBE

    Article • Journal of Crystal Growth, October 1990, Elsevier

    Prof. Dr. Markus Weyers

  647. Effect of doping on the thermal oxidation of GaAs

    Article • Applied Physics Letters, March 1990, American Institute of Physics

    Prof. Dr. Markus Weyers

  648. Effect of impurities on the thermal oxidation process in InP

    Article • Applied Physics Letters, March 1990, American Institute of Physics

    Prof. Dr. Markus Weyers

  649. Residual donor contamination in MOCVD, MOMBE and MBE GaAs studied by far-infrared spectroscopy

    Article • Semiconductor Science and Technology, September 1989, Institute of Physics Publishing

    Prof. Dr. Markus Weyers

  650. Carbon incorporation in MOMBE-grown Ga0.47In0.53As

    Article • Journal of Crystal Growth, February 1989, Elsevier

    Prof. Dr. Markus Weyers

  651. Mombe and Pemocvd Growth of GaAs on Si (100) Substrates

    Article • January 1989, Springer Science + Business Media

    Prof. Dr. Markus Weyers

  652. MOMBE and MOVPE—A comparison of growth techniques

    Article • Progress in Crystal Growth and Characterization, January 1989, Elsevier

    Prof. Dr. Markus Weyers

  653. Quantitative analysis of carbon concentration in MOMBEp‐GaAs by low‐temperature photoluminescence

    Article • Journal of Applied Physics, November 1988, American Institute of Physics

    Prof. Dr. Markus Weyers

  654. Arsenic passivation of MOMBE grown GaAs surfaces

    Article • Surface Science, October 1988, Elsevier

    Prof. Dr. Markus Weyers

  655. Defects in GaAs films grown by MOMBE

    Article • Journal of Crystal Growth, February 1987, Elsevier

    Prof. Dr. Markus Weyers

  656. Doping of GaAs in metalorganic MBE using gaseous sources

    Article • Journal of Crystal Growth, February 1987, Elsevier

    Prof. Dr. Markus Weyers

  657. Selective growth of GaAs in the MOMBE and MOCVD systems

    Article • Journal of Crystal Growth, September 1986, Elsevier

    Prof. Dr. Markus Weyers

  658. Intentional ρ-type doping by carbon in metalorganic MBE of GaAs

    Article • Journal of Electronic Materials, March 1986, Springer Science + Business Media

    Prof. Dr. Markus Weyers

  659. A comparative study of Ga(CH3)3 and Ga(C2H5)3 in the mombe of GaAs

    Article • Journal of Crystal Growth, February 1986, Elsevier

    Prof. Dr. Markus Weyers

  660. Epitaxy of High-Power Diode Laser Structures

    Article • Springer Science + Business Media

    Dr Frank Bugge, Prof. Dr. Markus Weyers

  661. High-power, high-efficiency 1150 nm quantum well laser

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Dr Frank Bugge, Prof. Dr. Markus Weyers

  662. High power 810 nm GaAsP/AlGaAs diode lasers with narrow beam divergence

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Dr Frank Bugge, Prof. Dr. Markus Weyers

  663. Femtosecond mode-locking of epitaxially grown Yb:KLu(WO/sub 4/)/sub 2/ composites

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr. Markus Weyers

  664. Passively cooled 940 nm laser bars with 73 % wall-plug efficiency and high reliability at 98 W quasi-cw output power

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr. Markus Weyers

  665. Sub-80 fs pulses from a mode-locked Yb:NaGd(WO/sub 4/)/sub 2/ laser

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr. Markus Weyers

  666. Investigation of short-term current gain stability of GaInP/GaAs-HBTs grown by MOVPE

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr. Markus Weyers

  667. Red VCSELs: More than 4 mW output power at 650 nm

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr. Markus Weyers

  668. 5.3 W CW high brightness 980-nm tapered diode lasers

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr. Markus Weyers

  669. 980-nm DBR lasers using higher order gratings fabricated in a single-step process

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr. Markus Weyers

  670. High-power 980-nm DFB diode lasers with a small vertical farfield divergence

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr. Markus Weyers

  671. Development of 650 nm-emitting VCSELs for cw operation

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr. Markus Weyers

  672. High power, highly reliable Al-free 940 nm diode lasers

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr. Markus Weyers

  673. Real-time monitoring of P-based semiconductor growth by linear-optical spectroscopy

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr. Markus Weyers

  674. MOVPE-overgrowth for buried InP/(In,Ga)(As,P) laser diode arrays

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr. Markus Weyers