All Stories

  1. Generation of optical picosecond pulses with monolithic colliding-pulse mode-locked (CPM) lasers containing a chirped double quantum well active region

    Article • IET Optoelectronics, December 2016, the Institution of Engineering and Technology (the IET)

    Dr Frank Bugge, Prof. Dr. Markus Weyers

  2. Freely Triggerable Picosecond Pulses From a DBR Ridge Waveguide Diode Laser Near 1120 nm

    Article • IEEE Photonics Technology Letters, April 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Frank Bugge, Prof. Dr. Markus Weyers

  3. DBR tapered diode laser at 1030 nm with nearly diffraction-limited narrowband emission and 12.7 W of optical output power

    Article • March 2016, SPIE

    Dr Frank Bugge, Dr Olaf Brox, Prof. Dr. Markus Weyers

  4. 940nm QCW diode laser bars with 70% efficiency at 1 kW output power at 203K: analysis of remaining limits and path to higher efficiency and power at 200K and 300K

    Article • March 2016, SPIE

    Dr Frank Bugge

  5. MOVPE growth of laser structures for high-power applications at different ambient temperatures

    Article • Journal of Crystal Growth, January 2016, Elsevier

    Dr Frank Bugge, Prof. Dr. Markus Weyers

  6. Watt-level continuous-wave diode lasers at 1180 nm with high spectral brightness

    Article • April 2015, SPIE

    Dr Olaf Brox, Dr Frank Bugge, Prof. Dr. Markus Weyers

  7. Progress in high-energy-class diode laser pump sources

    Article • March 2015, SPIE

    Dr Frank Bugge

  8. Generation of spectrally-stable continuous-wave emission and ns pulses at 800 nm and 975 nm with a peak power of 4 W using a distributed Bragg reflector laser and a ridge-waveguide power amplifier

    Article • March 2015, SPIE

    Dr Frank Bugge, Prof. Dr. Markus Weyers

  9. Shifted excitation Raman difference spectroscopy using a dual-wavelength DBR diode laser at 785 nm

    Article • March 2015, SPIE

    Dr Frank Bugge, Prof. Dr. Markus Weyers

  10. Combined Mg/Zn p-type doping for AlGaInP laser diodes

    Article • Journal of Crystal Growth, March 2015, Elsevier

    Dr Frank Bugge, Prof. Dr. Markus Weyers

  11. Growth of laser diode structures with emission wavelength beyond 1100nm for yellow–green emission by frequency conversion

    Article • Journal of Crystal Growth, March 2015, Elsevier

    Dr Frank Bugge, Prof. Dr. Markus Weyers

  12. Low-temperature Optimized 940 nm Diode Laser Bars with 1.98 kW Peak Power at 203 K

    Article • January 2015, Optical Society of America (OSA)

    Dr Frank Bugge

  13. Progress In The Development Of Kilowatt-class Diode Laser Bars For Pump Applications

    Article • January 2015, Optical Society of America (OSA)

    Dr Frank Bugge

  14. Generation of spectrally stable continuous-wave emission and ns pulses with a peak power of 4 W using a distributed Bragg reflector laser and a ridge-waveguide power amplifier

    Article • Optics Express, September 2014, Optical Society of America (OSA)

    Dr Frank Bugge, Prof. Dr. Markus Weyers

  15. Dual-Wavelength Y-Branch Distributed Bragg Reflector Diode Laser at 785 Nanometers for Shifted Excitation Raman Difference Spectroscopy

    Article • Applied Spectroscopy, August 2014, SAGE Publications

    Dr Frank Bugge

  16. Small linewidths 76× nm DFB-laser diodes with optimised two-step epitaxial gratings

    Article • May 2014, SPIE

    Dr Olaf Brox, Dr Frank Bugge

  17. Watt-level continuous-wave diode lasers at 1180 nm with InGaAs quantum wells

    Article • March 2014, SPIE

    Dr Frank Bugge

  18. Study of waveguide designs for high-power 9xx-nm diode lasers operating at 200 K

    Article • March 2014, SPIE

    Dr Frank Bugge

  19. Second harmonic pico-second pulse generation with mode-locked 1064nm DBR laser diodes

    Article • February 2014, SPIE

    Dr Olaf Brox, Dr Frank Bugge

  20. Cryogenic ultra-high power infrared diode laser bars

    Article • February 2014, SPIE

    Dr Frank Bugge

  21. Corrections to “Efficient High-Power Laser Diodes” [Jul/Aug 13 1501211]

    Article • IEEE Journal of Selected Topics in Quantum Electronics, January 2014, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Frank Bugge

  22. Efficient High-Power Laser Diodes

    Article • IEEE Journal of Selected Topics in Quantum Electronics, July 2013, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Frank Bugge

  23. Influence of the length of the absorber section on the mode locking behaviour of a 1064nm DBR laser determined on a single device

    Article • May 2013, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Olaf Brox, Dr Frank Bugge

  24. MOVPE growth of Al0.85Ga0.15As for high power laser diodes emitting at 808nm

    Article • Journal of Crystal Growth, May 2013, Elsevier

    Dr Frank Bugge, Prof. Dr. Markus Weyers

  25. Tunable and highly brilliant laser sources at 1120 nm

    Article • May 2013, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Frank Bugge, Prof. Dr. Markus Weyers

  26. 1120nm highly brilliant laser sources for SHG-modules in bio-analytics and spectroscopy

    Article • March 2013, SPIE

    Dr Frank Bugge, Prof. Dr. Markus Weyers

  27. Low-loss smile-insensitive external frequency-stabilization of high power diode lasers enabled by vertical designs with extremely low divergence angle and high efficiency

    Article • February 2013, SPIE

    Dr Frank Bugge

  28. 96 mW longitudinal single mode red-emitting distributed Bragg reflector ridge waveguide laser with tenth order surface gratings

    Article • Optics Letters, May 2012, Optical Society of America (OSA)

    Dr Frank Bugge, Prof. Dr. Markus Weyers

  29. 10-W reliable 90-μm-wide broad area lasers with internal grating stabilization

    Article • February 2012, SPIE

    Dr Olaf Brox, Dr Frank Bugge, Prof. Dr. Markus Weyers

  30. All-semiconductor-based narrow linewidth high-power laser system for laser communication applications in space at 1060 nm

    Article • February 2012, SPIE

    Dr Frank Bugge, Prof. Dr. Markus Weyers

  31. High-power, spectrally stabilized, near-diffraction-limited 970 nm laser light source based on truncated-tapered semiconductor optical amplifiers with low confinement factors

    Article • Semiconductor Science and Technology, December 2011, Institute of Physics Publishing

    Dr Frank Bugge, Prof. Dr. Markus Weyers

  32. Characterization and optimization of 2-step MOVPE growth for single-mode DFB or DBR laser diodes

    Article • Journal of Crystal Growth, January 2011, Elsevier

    Dr Olaf Brox, Dr Frank Bugge, Prof. Dr. Markus Weyers

  33. High-power edge-emitting laser diode with narrow vertical beam divergence

    Article • Electronics Letters, January 2011, the Institution of Engineering and Technology (the IET)

    Dr Frank Bugge, Prof. Dr. Markus Weyers

  34. Broad-area lasers with internal surface Bragg gratings for wavelength stabilization at 980nm

    Article • September 2010, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Frank Bugge, Prof. Dr. Markus Weyers

  35. 975-nm high-power broad area diode lasers optimized for narrow spectral linewidth applications

    Article • February 2010, SPIE

    Dr Olaf Brox, Dr Frank Bugge

  36. High-power distributed-feedback tapered master-oscillator power amplifiers emitting at 1064 nm

    Article • February 2010, SPIE

    Dr Olaf Brox, Dr Frank Bugge, Prof. Dr. Markus Weyers

  37. Reliability of diode lasers for space applications

    Article • February 2009, SPIE

    Dr Frank Bugge

  38. 20W continuous wave reliable operation of 980nm broad-area single emitter diode lasers with an aperture of 96μm

    Article • February 2009, SPIE

    Dr Frank Bugge

  39. Assessment of the limits to peak power of 1100nm broad area single emitter diode lasers under short pulse conditions

    Article • February 2009, SPIE

    Dr Frank Bugge

  40. MOVPE growth of InGaAs/GaAsP-MQWs for high-power laser diodes studied by reflectance anisotropy spectroscopy

    Article • Journal of Crystal Growth, February 2009, Elsevier

    Dr Frank Bugge, Prof. Dr. Markus Weyers

  41. Passively Cooled TM Polarized 808-nm Laser Bars With 70% Power Conversion at 80-W and 55-W Peak Power per 100- $\mu$m Stripe Width

    Article • IEEE Photonics Technology Letters, August 2008, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Frank Bugge

  42. Brilliant high power laser bars for industrial applications

    Article • February 2008, SPIE

    Dr Frank Bugge

  43. Five-hundred-milliwatts distributed-feedback diode laser emitting at 940nm

    Article • Optics & Laser Technology, March 2007, Elsevier

    Dr Frank Bugge, Prof. Dr. Markus Weyers

  44. High-power 894 nm monolithic distributed-feedback laser

    Article • Optics Express, January 2007, Optical Society of America (OSA)

    Dr Olaf Brox, Dr Frank Bugge

  45. MOVPE growth optimization for laser diodes with highly strained InGaAs MQWs

    Article • Journal of Crystal Growth, January 2007, Elsevier

    Dr Frank Bugge, Prof. Dr. Markus Weyers

  46. Diode-cladding-pumped singly Ho3+-doped silica fibre laser

    Article • Electronics Letters, January 2007, the Institution of Engineering and Technology (the IET)

    Dr Frank Bugge

  47. Laser diodes with narrow vertical far firlds

    Article • physica status solidi c, March 2006, Wiley

    Dr Frank Bugge, Prof. Dr. Markus Weyers

  48. Highly reliable 75W InGaAs/AlGaAs laser bars with over 70% conversion efficiency

    Article • February 2006, SPIE

    Dr Frank Bugge

  49. High-power high-efficiency 1150-nm quantum-well laser

    Article • IEEE Journal of Selected Topics in Quantum Electronics, September 2005, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Frank Bugge, Prof. Dr. Markus Weyers

  50. High-performance laser diodes with emission wavelengths above 1100 nm and very small vertical divergence of the far field

    Article • IEEE Photonics Technology Letters, June 2005, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Frank Bugge, Prof. Dr. Markus Weyers

  51. Comprehensive characterization of MOVPE-grown AlGaAs/AlAs distributed Bragg reflector structures by optical reflectance, X-ray diffraction and atomic force microscopy

    Article • Journal of Crystal Growth, February 2005, Elsevier

    Dr Frank Bugge, Prof. Dr. Markus Weyers

  52. Interdiffusion in highly strained InGaAs-QWs for high power laser diode applications

    Article • Journal of Crystal Growth, December 2004, Elsevier

    Dr Frank Bugge, Prof. Dr. Markus Weyers

  53. High-power 783 nm distributed-feedback laser

    Article • Electronics Letters, January 2004, the Institution of Engineering and Technology (the IET)

    Dr Frank Bugge, Prof. Dr. Markus Weyers

  54. Fabricating and testing of Bragg gratings for 1060-nm α-DFB lasers

    Article • March 2003, SPIE

    Dr Frank Bugge

  55. Highly strained very high-power laser diodes with InGaAs QWs

    Article • Journal of Crystal Growth, February 2003, Elsevier

    Dr Frank Bugge, Prof. Dr. Markus Weyers

  56. 1.6 W hybrid master oscillator power amplifier with -DFB-laser as master oscillator at 1057 nm

    Article • Electronics Letters, January 2002, the Institution of Engineering and Technology (the IET)

    Dr Frank Bugge

  57. Performance of 3-W/100-μm stripe diode laser at 950 and 810 nm

    Article • June 2001, SPIE

    Dr Frank Bugge, Prof. Dr. Markus Weyers

  58. Mounting of high power laser diodes on boron nitride heat sinks using an optimized Au/Sn metallurgy

    Article • IEEE Transactions on Advanced Packaging, January 2001, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Frank Bugge

  59. Interdiffusion-induced degradation of 1017nm ridge waveguide laser diodes

    Article • Journal of Crystal Growth, March 2000, Elsevier

    Dr Frank Bugge

  60. MOVPE growth of AlGaAs/GaInP diode lasers

    Article • Journal of Electronic Materials, January 2000, Springer Science + Business Media

    Dr Frank Bugge, Prof. Dr. Markus Weyers

  61. Optimization of GaAsP/AlGaAs-based QW laser structures for high power 800 nm operation

    Article • Journal of Electronic Materials, January 2000, Springer Science + Business Media

    Dr Frank Bugge, Prof. Dr. Markus Weyers

  62. Gain spectra measurement of strained and strain-compensated InGaAsP-AlGaAs laser structures for λ≅800 nm

    Article • IEEE Journal of Selected Topics in Quantum Electronics, January 1999, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Frank Bugge

  63. MOVPE growth of tunable DBR laser diode emitting at 1060nm

    Article • Journal of Crystal Growth, December 1998, Elsevier

    Dr Frank Bugge, Prof. Dr. Markus Weyers

  64. MOVPE growth of highly strained InGaAs/GaAs quantum wells

    Article • Journal of Crystal Growth, February 1998, Elsevier

    Dr Frank Bugge, Prof. Dr. Markus Weyers

  65. Monomode emission at 350 mW and high reliability with InGaAs/AlGaAs ( = 1020 nm) ridge waveguide laser diodes

    Article • Electronics Letters, January 1998, the Institution of Engineering and Technology (the IET)

    Dr Frank Bugge

  66. High-resolution X-ray diffraction investigation of crystal perfection and relaxation of GaAs/InGaAs/GaAs quantum wells depending on MOVPE growth conditions

    Article • Il Nuovo Cimento D, February 1997, Springer Science + Business Media

    Dr Frank Bugge, Prof. Dr. Markus Weyers

  67. Crystalline perfection in GaInAsP/GaAs laser structures with GaInP or AlGaAs cladding layers

    Article • Materials Science and Engineering B, February 1997, Elsevier

    Dr Frank Bugge, Prof. Dr. Markus Weyers

  68. Influence of the growth temperature and substrate orientation on the layer properties of MOVPE-growth

    Article • Journal of Crystal Growth, January 1997, Elsevier

    Dr Frank Bugge, Prof. Dr. Markus Weyers

  69. Stable operation of InGaAs/InGaP/AlGaAs ( = 1020 nm) laser diodes

    Article • Electronics Letters, January 1997, the Institution of Engineering and Technology (the IET)

    Dr Frank Bugge, Prof. Dr. Markus Weyers

  70. Temperature dependent EBIC and deep level transient spectroscopy investigation of different types of misfit-dislocations at MOVPE grown GaAs/InGaAs/GaAs-single-quantum wells

    Article • Materials Science and Engineering B, December 1996, Elsevier

    Dr Frank Bugge, Prof. Dr. Markus Weyers

  71. Effect of growth temperature on performance of AIGaAs/lnGaAs/GaAs QW laser diodes

    Article • Journal of Electronic Materials, February 1996, Springer Science + Business Media

    Dr Frank Bugge, Prof. Dr. Markus Weyers

  72. TEM characterization of the interface quality of MOVPE grown strained InGaAs/GaAs heterostructures

    Article • phys stat sol (a), July 1995, Wiley

    Dr Frank Bugge

  73. Potential sources of degradation in InGaAs/GaAs laser diodes

    Article • Materials Science and Engineering B, December 1994, Elsevier

    Dr Frank Bugge, Prof. Dr. Markus Weyers

  74. Metal-organic vapor phase epitaxy of (GaAl)As for 0.85-μm laser diodes

    Article • Soviet Journal of Quantum Electronics, November 1988, Turpion-Moscow Limited

    Dr Frank Bugge

  75. Epitaxy of High-Power Diode Laser Structures

    Article • Springer Science + Business Media

    Dr Frank Bugge, Prof. Dr. Markus Weyers

  76. High-power, high-efficiency 1150 nm quantum well laser

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Dr Frank Bugge, Prof. Dr. Markus Weyers

  77. Reliable High-Power InGaAs/AIGaAs Ridge Waveguide Laser Diodes

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Dr Frank Bugge

  78. Gain spectra measurement of strained and strain compensated InGaAsP/AlGaAs laser structures for λ≅800 nm using a new variable stripe length method

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Dr Frank Bugge

  79. Gain spectra measurement of InGaAsP/AlGaAs laser structures for wavelengths near 800 nm using a new variable stripe length method

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Dr Frank Bugge

  80. High power 810 nm GaAsP/AlGaAs diode lasers with narrow beam divergence

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Dr Frank Bugge, Prof. Dr. Markus Weyers

  81. High power pulse generation with a three section DBR laser with controllable saturable absorber

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Dr Frank Bugge

  82. 1W output power from a 10 μm aperture 940 nm-laser diode with a RISAS-structure

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Dr Frank Bugge

  83. A study of structures with Al-free QWs in AlGaAs waveguides for laser diodes emitting at 800 nm

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Dr Frank Bugge

  84. 100 mW fundamental mode laser for 730 nm wavelength based on tensile-strained GaAsP-AlGaAs quantum well structures

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Dr Frank Bugge

  85. Tensile-strained GaAs/sub 1-y/P/sub y/-AlGaAs quantum well diode lasers emitting between 715 nm and 790 nm

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Dr Frank Bugge

  86. Highly reliable tensile strained 810 nm QW laser diode operating at high temperatures

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Dr Frank Bugge

  87. 808 nm TM-polarized GaAsP/AlGaAs high-power Al-free-active region laser diodes with high efficiency and small divergence

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Dr Frank Bugge

  88. Mounting of high power laser diodes on boron nitride heat sinks using an optimized Au/Sn metallurgy

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Dr Frank Bugge