All Stories

  1. Exploring miscut angle influence on (100) β-Ga2O3 homoepitaxial films growth: Comparing MOVPE growth with MBE approaches

    Article • Journal of Applied Physics, November 2023, American Institute of Physics

    Ta-Shun Chou

  2. Ge-ion implantation and activation in (100) β-Ga2O3 for ohmic contact improvement using pulsed rapid thermal annealing

    Article • Journal of Vacuum Science & Technology A Vacuum Surfaces and Films, May 2023, American Vacuum Society

    Ta-Shun Chou

  3. Enhancement-mode vertical (100) β-Ga2O3 FinFETs with an average breakdown strength of 2.7 MV cm−1

    Article • Japanese Journal of Applied Physics, March 2023, Institute of Physics Publishing

    Ta-Shun Chou

  4. High-mobility 4 μm MOVPE-grown (100) β-Ga2O3 film by parasitic particles suppression

    Article • Japanese Journal of Applied Physics, February 2023, Institute of Physics Publishing

    Ta-Shun Chou

  5. Homoepitaxial growth rate measurement and surface morphology monitoring of MOVPE-grown Si-doped (1 0 0) β-Ga2O3 thin films using in-situ reflectance spectroscopy

    Article • Journal of Crystal Growth, February 2023, Elsevier

    Ta-Shun Chou

  6. Suppression of particle formation by gas-phase pre-reactions in (100) MOVPE-grown β-Ga2O3 films for vertical device application

    Article • Applied Physics Letters, January 2023, American Institute of Physics

    Ta-Shun Chou

  7. Bulk single crystals and physical properties of β-(AlxGa1−x)2O3 (x = 0–0.35) grown by the Czochralski method

    Article • Journal of Applied Physics, January 2023, American Institute of Physics

    Zbigniew Galazka, Ta-Shun Chou

  8. Perspectives on MOVPE-grown (100) β-Ga2O3 thin films and its Al-alloy for power electronics application

    Article • Applied Physics Letters, December 2022, American Institute of Physics

    Ta-Shun Chou

  9. Cobalt as a promising dopant for producing semi-insulating β-Ga2O3 crystals: Charge state transition levels from experiment and theory

    Article • APL Materials, November 2022, American Institute of Physics

    Palvan Seyidov, Ta-Shun Chou

  10. Effect of post-metallization anneal on (100) Ga2O3/Ti–Au ohmic contact performance and interfacial degradation

    Article • APL Materials, September 2022, American Institute of Physics

    Ta-Shun Chou

  11. Exploiting the Nanostructural Anisotropy of β-Ga2O3 to Demonstrate Giant Improvement in Titanium/Gold Ohmic Contacts

    Article • ACS Nano, August 2022, American Chemical Society (ACS)

    Ta-Shun Chou

  12. Machine learning supported analysis of MOVPE grown β-Ga2O3 thin films on sapphire

    Article • Journal of Crystal Growth, August 2022, Elsevier

    Ta-Shun Chou

  13. Si doping mechanism in MOVPE-grown (100) β-Ga2O3 films

    Article • Applied Physics Letters, July 2022, American Institute of Physics

    Ta-Shun Chou, Ta-Shun Chou

  14. Refractory metal-based ohmic contacts on β-Ga2O3 using TiW

    Article • APL Materials, July 2022, American Institute of Physics

    Kornelius Tetzner, Ta-Shun Chou

  15. Two inch diameter, highly conducting bulk β-Ga2O3 single crystals grown by the Czochralski method

    Article • Applied Physics Letters, April 2022, American Institute of Physics

    Zbigniew Galazka, Ta-Shun Chou

  16. SnO/β-Ga2O3 heterojunction field-effect transistors and vertical p–n diodes

    Article • Applied Physics Letters, March 2022, American Institute of Physics

    Kornelius Tetzner, Ta-Shun Chou

  17. Toward Precise n-Type Doping Control in MOVPE-Grown β-Ga2O3 Thin Films by Deep-Learning Approach

    Article • Crystals, December 2021, MDPI AG

    Ta-Shun Chou

  18. Fast homoepitaxial growth of (100) β-Ga2O3 thin films via MOVPE

    Article • AIP Advances, November 2021, American Institute of Physics

    Ta-Shun Chou

  19. Impact of chamber pressure and Si-doping on the surface morphology and electrical properties of homoepitaxial (100) β-Ga2O3thin films grown by MOVPE

    Article • Journal of Physics D Applied Physics, October 2020, Institute of Physics Publishing

    Ta-Shun Chou

  20. Self-Selecting Resistive Switching Scheme Using TiO2 Nanorod Arrays

    Article • Scientific Reports, May 2017, Springer Science + Business Media

    Ta-Shun Chou

  21. Direct formation of large-scale multi-layered germanene on Si substrate

    Article • Physical Chemistry Chemical Physics, January 2015, Royal Society of Chemistry

    Ta-Shun Chou