All Stories

  1. In-situ reflectance analysis of Si-doped β-Ga2O3 films grown by MOVPE: The influence of doping concentration and substrate conductivity
  2. Impurity-induced step pinning and recovery in MOVPE-grown (100) β-Ga2O3 film
  3. Exploring miscut angle influence on (100) β-Ga2O3 homoepitaxial films growth: Comparing MOVPE growth with MBE approaches
  4. Ge-ion implantation and activation in (100) β-Ga2O3 for ohmic contact improvement using pulsed rapid thermal annealing
  5. Enhancement-mode vertical (100) β-Ga2O3 FinFETs with an average breakdown strength of 2.7 MV cm−1
  6. High-mobility 4 μm MOVPE-grown (100) β-Ga2O3 film by parasitic particles suppression
  7. Homoepitaxial growth rate measurement and surface morphology monitoring of MOVPE-grown Si-doped (1 0 0) β-Ga2O3 thin films using in-situ reflectance spectroscopy
  8. Suppression of particle formation by gas-phase pre-reactions in (100) MOVPE-grown β-Ga2O3 films for vertical device application
  9. Bulk single crystals and physical properties of β-(AlxGa1−x)2O3 (x = 0–0.35) grown by the Czochralski method
  10. Perspectives on MOVPE-grown (100) β-Ga2O3 thin films and its Al-alloy for power electronics application
  11. Cobalt as a promising dopant for producing semi-insulating β-Ga2O3 crystals: Charge state transition levels from experiment and theory
  12. Effect of post-metallization anneal on (100) Ga2O3/Ti–Au ohmic contact performance and interfacial degradation
  13. Exploiting the Nanostructural Anisotropy of β-Ga2O3 to Demonstrate Giant Improvement in Titanium/Gold Ohmic Contacts
  14. Machine learning supported analysis of MOVPE grown β-Ga2O3 thin films on sapphire
  15. Si doping mechanism in MOVPE-grown (100) β-Ga2O3 films
  16. Refractory metal-based ohmic contacts on β-Ga2O3 using TiW
  17. Two inch diameter, highly conducting bulk β-Ga2O3 single crystals grown by the Czochralski method
  18. SnO/β-Ga2O3 heterojunction field-effect transistors and vertical p–n diodes
  19. Toward Precise n-Type Doping Control in MOVPE-Grown β-Ga2O3 Thin Films by Deep-Learning Approach
  20. Fast homoepitaxial growth of (100) β-Ga2O3 thin films via MOVPE
  21. Impact of chamber pressure and Si-doping on the surface morphology and electrical properties of homoepitaxial (100) β-Ga2O3thin films grown by MOVPE
  22. Self-Selecting Resistive Switching Scheme Using TiO2 Nanorod Arrays
  23. Direct formation of large-scale multi-layered germanene on Si substrate