All Stories

  1. All-implanted lateral β-Ga2O3 MOSFET devices realized on semi-insulating (-201) β-Ga2O3 substrates

    Article • Applied Physics Letters, February 2025, American Institute of Physics

    Kornelius Tetzner

  2. Refractory metal-based ohmic contacts on β-Ga2O3 using TiW

    Article • APL Materials, July 2022, American Institute of Physics

    Kornelius Tetzner, Ta-Shun Chou

  3. SnO/β-Ga2O3 heterojunction field-effect transistors and vertical p–n diodes

    Article • Applied Physics Letters, March 2022, American Institute of Physics

    Kornelius Tetzner, Ta-Shun Chou

  4. Dispersion Effects in On-state Resistance of Lateral Ga2O3 MOSFETs at 300 V Switching

    Article • Electronics Letters, May 2020, the Institution of Engineering and Technology (the IET)

    Kornelius Tetzner