All Stories

  1. Bulk single crystals and physical properties of β-(AlxGa1−x)2O3 (x = 0–0.35) grown by the Czochralski method

    Article • Journal of Applied Physics, January 2023, American Institute of Physics

    Zbigniew Galazka, Ta-Shun Chou

  2. Two inch diameter, highly conducting bulk β-Ga2O3 single crystals grown by the Czochralski method

    Article • Applied Physics Letters, April 2022, American Institute of Physics

    Zbigniew Galazka, Ta-Shun Chou

  3. Growth of bulk β-Ga2O3 single crystals by the Czochralski method

    Article • Journal of Applied Physics, January 2022, American Institute of Physics

    Zbigniew Galazka

  4. Deep-level noise characterization of MOVPE-grown β-Ga2O3

    Article • Applied Physics Letters, September 2019, American Institute of Physics

    Zbigniew Galazka

  5. Role of interface quality for the spin Hall magnetoresistance in nickel ferrite thin films with bulk-like magnetic properties

    Article • Applied Physics Letters, August 2019, American Institute of Physics

    Arun Gupta, Zbigniew Galazka

  6. Vectorial observation of the spin Seebeck effect in epitaxial NiFe2O4 thin films with various magnetic anisotropy contributions

    Article • Applied Physics Letters, June 2019, American Institute of Physics

    Arun Gupta, Zbigniew Galazka

  7. Indium incorporation in homoepitaxial β-Ga2O3 thin films grown by metal organic vapor phase epitaxy

    Article • Journal of Applied Physics, May 2019, American Institute of Physics

    Zbigniew Galazka

  8. High field-emission current density from β-Ga2O3 nanopillars

    Article • Applied Physics Letters, May 2019, American Institute of Physics

    Antonio Di Bartolomeo, Zbigniew Galazka

  9. Longitudinal phonon plasmon mode coupling in β-Ga2O3

    Article • Applied Physics Letters, March 2019, American Institute of Physics

    Zbigniew Galazka

  10. Ultra-wide bandgap, conductive, high mobility, and high quality melt-grown bulk ZnGa2O4 single crystals

    Article • APL Materials, February 2019, American Institute of Physics

    Zbigniew Galazka

  11. Anisotropic optical properties of highly doped rutile SnO2: Valence band contributions to the Burstein-Moss shift

    Article • APL Materials, February 2019, American Institute of Physics

    Martin Feneberg, Zbigniew Galazka

  12. Step-flow growth in homoepitaxy of β-Ga2O3 (100)—The influence of the miscut direction and faceting

    Article • APL Materials, February 2019, American Institute of Physics

    Zbigniew Galazka

  13. Temperature dependence of the Seebeck coefficient of epitaxial β-Ga2O3 thin films

    Article • APL Materials, February 2019, American Institute of Physics

    Zbigniew Galazka