All Stories

  1. Degradation of 1.3 μm Quantum Dot Laser Diodes for Silicon Photonics: Dependence on the Number of Dot-in-a-Well Layers
  2. Impact of the Oxide Aperture Width on the Degradation of 845 Nm VCSELs for Silicon Photonics
  3. Quality Assessment of Perovskite Solar Cells: An Industrial Point of View
  4. Investigation and modeling of the role of interface defects in the optical degradation of InGaN/GaN LEDs
  5. Advanced defect spectroscopy in wide-bandgap semiconductors: review and recent results
  6. Origin and Recovery of Negative VTH Shift on 4H–SiC MOS Capacitors: An Analysis Based on Inverse Laplace Transform and Temperature-Dependent Measurements
  7. Investigation of degradation dynamics of 265 nm LEDs assisted by EL measurements and numerical simulations
  8. Positive VTH Shift in Schottky p-GaN Gate Power HEMTs: Dependence on Temperature, Bias and Gate Leakage
  9. Charge Trapping in SiC MOSFETs under Constant Gate Current Stress: Analysis Based on Charge Pumping Measurements
  10. Deep Level Effects in N-Polar AlGaN/GaN High Electron Mobility Transistors: Toward Zero Dispersion Effects
  11. On-Wafer Dynamic Operation of Power GaN-HEMTs: Degradation Processes Investigated by a Novel Experimental Approach
  12. $\mathrm{R}_{\text{ON}}$ and $\mathrm{V}_{\text{TH}}$ Extraction in Hard-Switched E-mode GaN HEMTs: Impact of Passivation and Layout
  13. Role of Gate Hole Injection in Minimizing Substrate Coupling and Electron Trapping in AlGaN/GaN Power HEMTs
  14. Threshold Voltage Drift and Recovery of SiC Trench MOSFETs During TDDB Stress
  15. Modeling of the gate leakage in MOSFETs with Al2O3/β-Ga2O3 gate stack
  16. Defects, performance, and reliability in UVC LEDs
  17. Robustness and reliability of high-power white LEDs under high-temperature, high-current stress
  18. Undestanding commercial UVC LEDs reliability to boost disinfection efficacy
  19. Semitransparent perovskite solar cells for Si tandem and agrivoltaic integration
  20. Antimony selenide solar cells: non-ideal deep level response and study of trap-filling transients
  21. Influence of V-pits on the electro-optical properties of high-periodicity InGaN MQWs
  22. Lifetime-limiting mechanisms of integrated IR sources for silicon photonics
  23. Physical insights into trapping effects on vertical GaN-on-Si trench MOSFETs from TCAD
  24. Modeling the Electrical Degradation of Micro-Transfer Printed 845 nm VCSILs for Silicon Photonics
  25. Review and Outlook on GaN and SiC Power Devices: Industrial State-of-the-Art, Applications, and Perspectives
  26. Modeling of the electrical characteristics and degradation mechanisms of UV-C LEDs
  27. V-Pits and Trench-Like Defects in High Periodicity MQWs GaN-Based Solar Cells: Extensive Electro-Optical Analysis
  28. TCAD Modeling and Simulation of Dark Current-Voltage Characteristics in High-Periodicity InGaN/GaN Multiple-Quantum-Wells (MQWs) Solar Cells
  29. Fast Characterization of Power LEDs: Circuit Design and Experimental Results
  30. Experimental and Numerical Analysis of OFFState Bias Induced Instabilities in Vertical GaNon-Si Trench MOSFETs
  31. Negative Activation Energy of Gate Reliability in Schottky-Gate p-GaN HEMTs: Combined Gate Leakage Current Modeling and Spectral Electroluminescence Investigation
  32. Addressing the Optical Degradation of 1.3 μm Quantum Dot Lasers through Subthreshold Characterization
  33. A novel in-situ approach to monitor the variations in the on-resistance of power transistors during switching operation
  34. Early failure of high-power white LEDs for outdoor applications under extreme electrical stress: Role of silicone encapsulant
  35. Impact of high-temperature operating lifetime tests on the stability of 0.15 μm AlGaN/GaN HEMTs: A temperature-dependent analysis
  36. Threshold voltage instability in SiO2-gate semi-vertical GaN trench MOSFETs grown on silicon substrate
  37. Trade-off between gate leakage current and threshold voltage stability in power HEMTs during ON-state and OFF-state stress
  38. Bias-dependent degradation of single quantum well on InGaN-based light emitting diode
  39. Scaling of E-mode power GaN-HEMTs for low voltage/low Ron applications: Implications on robustness
  40. On the importance of Fast and Accurate LED Optical and Thermal Characterization: from visible use cases to UV technologies
  41. Addressing the electrical degradation of 845 nm micro-transfer printed VCSILs through TCAD simulations
  42. Modeling the electrical characteristic and degradation mechanisms of UV-C LEDs
  43. Gate leakage modeling in lateral β -Ga2O3 MOSFETs with Al2O3 gate dielectric
  44. Solid State Lighting for horticolture: impact of LED reliability on light spectrum and intensity
  45. Performance and Degradation of Commercial Ultraviolet‐C Light‐Emitting Diodes for Disinfection Purposes
  46. Degradation of AlGaN-based UV-C SQW LEDs analyzed by means of capacitance deep-level transient spectroscopy and numerical simulations
  47. Modeling the electrical degradation of AlGaN-based UV-C LEDs by combined deep-level optical spectroscopy and TCAD simulations
  48. Influence of Mg-doping on UV-C LEDs and model of optical power degradation
  49. Dynamical properties and performances of ß-Ga2O3 UVC photodetectors of extreme solar blindness
  50. Analysis of defect-related optical degradation of VCSILs for photonic integrated circuits
  51. Degradation of AlGaN-based SQW UV-C LEDs investigated by capacitance deep level transient spectroscopy
  52. Degradation of GaN-based InGaN-GaN MQWs solar cells caused by thermally-activated diffusion
  53. Experimental analysis of degradation of multi-quantum well GaN based solar cells under current stress
  54. Improving the reliability of InAs quantum-dot laser diodes for silicon photonics: the role of trapping layers and misfit-dislocation density
  55. Degradation mechanisms of laser diodes for silicon photonics applications
  56. III-N optoelectronic devices: understanding the physics of electro-optical degradation
  57. Injection-limited efficiency of InGaN LEDs and impact on electro-optical performance and ageing: a case study
  58. UVC LED reliability and its effect on disinfection systems design
  59. Trapping in $\text{Al}_{2}\mathrm{O}_{3}/\text{GaN}$ MOScaps investigated by fast capacitive techniques
  60. High- Temperature PBTI in Trench-Gate Vertical GaN Power MOSFETs: Role of Border and Semiconductor Traps
  61. Thermally-activated failure mechanisms of 0.25 \ \mu \mathrm{m}$ RF AIGaN/GaN HEMTs submitted to long-term life tests
  62. Optically Induced Degradation Due to Thermally Activated Diffusion in GaN-Based InGaN/GaN MQW Solar Cells
  63. Transconductance Overshoot, a New Trap-Related Effect in AlGaN/GaN HEMTs
  64. Degradation of GaN-Based Multiple Quantum Wells Solar Cells Under Forward Bias: Investigation Based on Optical Measurements and Steady-State Photocapacitance
  65. Understanding the optical degradation of 845nm micro-transfer-printed VCSILs for photonic integrated circuits
  66. On the CET-Map Ill-Posed Inversion Problem: Theory and Application to GaN HEMTs
  67. Mechanisms of Step-Stress Degradation In Carbon-Doped 0.15 μm Algan/Gan Hemts for Power RF Applications
  68. Status of Performance and Reliability of 265 nm Commercial UV-C LEDs in 2023
  69. Influence of V-Pits on the Turn-On Voltage of GaN-Based High Periodicity Multiple Quantum Well Solar Cells
  70. Microwave and Millimeter-Wave GaN HEMTs: Impact of Epitaxial Structure on Short-Channel Effects, Electron Trapping, and Reliability
  71. Dynamic Behavior of Threshold Voltage and $\textit{I}_{\text{D}}$–$\textit{V}_{\text{DS}}$ Kink in AlGaN/GaN HEMTs Due to Poole–Frenkel Effect
  72. Correlating Interface and Border Traps With Distinctive Features of C–V Curves in Vertical Al$_{\text{2}}$O$_{\text{3}}$/GaN MOS Capacitors
  73. Failure Physics and Reliability of GaN‐Based HEMTs for Microwave and Millimeter‐Wave Applications: A Review of Consolidated Data and Recent Results
  74. GaN-Based Lateral and Vertical Devices
  75. Capture and emission time map to investigate the positive VTH shift in p-GaN power HEMTs
  76. Cryogenic-temperature investigation of negative bias stress inducing threshold voltage instabilities on 4H-SiC MOSFETs
  77. Impact of a defect trapping layer on the reliability of 1.3 μm quantum dot laser diodes grown on silicon
  78. Role of p-GaN layer thickness in the degradation of InGaN-GaN MQW solar cells under 405 nm laser excitation
  79. Comparison between Cu(In,Ga)Se2 solar cells with different back contacts submitted to current stress
  80. Impact of doping and geometry on breakdown voltage of semi-vertical GaN-on-Si MOS capacitors
  81. Isolation properties and failure mechanisms of vertical Pt / n-GaN SBDs
  82. Modeling the electrical characteristic of InGaN/GaN blue-violet LED structure under electrical stress
  83. Study of the influence of gate etching and passivation on current dispersion, trapping and reliability in RF 0.15 μm AlGaN/GaN HEMTs
  84. Impact of Generation and Relocation of Defects on Optical Degradation of Multi-Quantum-Well InGaN/GaN-Based Light-Emitting Diode
  85. Quantum efficiency of InGaN–GaN multi-quantum well solar cells: Experimental characterization and modeling
  86. Cryogenic Ultra-Fast Bias Temperature Instability Trap Profiling of SiC MOSFETs
  87. Logarithmic trapping and detrapping in β-Ga2O3 MOSFETs: Experimental analysis and modeling
  88. Study and characterization of GaN MOS capacitors: Planar vs trench topographies
  89. Time-dependent degradation of hydrogen-terminated diamond MESFETs
  90. Conduction properties and threshold voltage instability in β-Ga2O3 MOSFETs
  91. Deep levels and conduction processes in nitrogen-implanted Ga2O3 Schottky barrier diodes
  92. Role of carbon in dynamic effects and reliability of 0.15-um AlGaN/GaN HEMTs for RF power amplifiers
  93. Deep defects in InGaN LEDs: modeling the impact on the electrical characteristics
  94. GaN-based solar cells degradation kinetics investigated at high temperature under high-intensity 405nm optical stress
  95. On the performance and reliability of state-of-the-art commercial UV-C LEDs for disinfection purposes
  96. UV LED reliability: degradation mechanisms and challenges
  97. Investigation of deep level defects in n-type GaAsBi
  98. Analysis of dislocation-related and point-defects in III-As layers by extensive DLTS study
  99. Defects in III-N LEDs: experimental identification and impact on electro-optical characteristics
  100. Modeling the effect of spatial position and concentration of defects on optical degradation of InGaN/GaN multi quantum well light emitting diodes
  101. Optical degradation of InAs quantum-dot lasers on silicon: dependence on temperature and on diffusion processes
  102. Optical temperature measurement across IR opaque Iayers by means of visible excitation and photoluminescence
  103. Analysis and Modeling of Vth Shift in 4H-SiC MOSFETs at Room and Cryogenic-Temperature
  104. Deep level effects and degradation of 0.15 μm RF AlGaN/GaN HEMTs with Mono-layer and Bi-layer AlGaN backbarrier
  105. GaN RF HEMT Reliability: Impact of Device Processing on I-V Curve Stability and Current Collapse
  106. Influence of Drain and Gate Potential on Gate Failure in Semi-Vertical GaN-on-Si Trench MOSFETs
  107. Modeling Hot-Electron Trapping in GaN-based HEMTs
  108. Reliability of Commercial UVC LEDs: 2022 State-of-the-Art
  109. Defects and Reliability of GaN‐Based LEDs: Review and Perspectives
  110. Trap-state mapping to model GaN transistors dynamic performance
  111. Photon-induced degradation of InGaN-based LED in open-circuit conditions investigated by steady-state photocapacitance and photoluminescence
  112. Laser-induced activation of Mg-doped GaN: quantitative characterization and analysis
  113. Origin of the Diffusion-Related Optical Degradation of 1.3 μm Inas QD-LDs Epitaxially Grown on Silicon Substrate
  114. Compact Modeling of Nonideal Trapping/Detrapping Processes in GaN Power Devices
  115. Analysis of current transport layer localized resistivity increase after high stress on InGaN LEDs
  116. Impact of thermal annealing on deep levels in nitrogen-implanted β-Ga2O3 Schottky barrier diodes
  117. Charge Trapping in GaN Power Transistors: Challenges and Perspectives
  118. GaN-based power devices: Physics, reliability, and perspectives
  119. A Review of the Reliability of Integrated IR Laser Diodes for Silicon Photonics
  120. Dynamic and Capacitive Characterization of 3D GaN n-p-n Vertical Fin-FETs
  121. Detrapping Kinetics in N-polar AlGaN/GaN MIS-HEMTs
  122. Microstructural Degradation Investigations of OFF-State Stressed 0.15 μm RF AlGaN/GaN HEMTs: Failure Mode related Breakdown
  123. Review on the degradation of GaN-based lateral power transistors
  124. Degradation mechanisms of 1.3 μm C-doped quantum dot lasers grown on native substrate
  125. Effect of indium content and carrier distribution on the efficiency and reliability of InGaN/GaN-based multi quantum well light emitting diode
  126. Positive and negative charge trapping GaN HEMTs: Interplay between thermal emission and transport-limited processes
  127. Vertical GaN devices: Process and reliability
  128. Charge trapping in 0.1 μm AlGaN/GaN RF HEMTs: Dependence on barrier properties, voltage and temperature
  129. Electrical, optical characterization and degradation of Cu(InGa)Se2 devices with fluorine-doped tin oxide back contact
  130. Impact of an AlGaN spike in the buffer in 0.15 μm AlGaN/GaN HEMTs during step stress
  131. Nonequilibrium Green’s Function Modeling of Trap-Assisted Tunneling in InxGa1−xN /GaN Light-Emitting Diodes
  132. Non-monotonic threshold voltage variation in 4H-SiC metal–oxide–semiconductor field-effect transistor: Investigation and modeling
  133. Current crowding as a major cause for InGaN LED degradation at extreme high current density
  134. Effects of quantum-well indium content on deep defects and reliability of InGaN/GaN light-emitting diodes with under layer
  135. Failure mechanisms of GaN HEMTs for microwave and millimeter-wave applications: from interdiffusion effects to hot-electrons degradation
  136. Dynamic Performance Characterization Techniques in Gallium Nitride-Based Electronic Devices
  137. Modeling the electrical characteristics of InGaN/GaN LED structures based on experimentally-measured defect characteristics
  138. Short term reliability and robustness of ultra-thin barrier, 110 nm-gate AlN/GaN HEMTs
  139. UV-Based Technologies for SARS-CoV2 Inactivation: Status and Perspectives
  140. Glass-ceramic composites for high-power white-light-emitting diodes
  141. Deep levels and carrier capture kinetics in n-GaAsBi alloys investigated by deep level transient spectroscopy
  142. Identification of dislocation-related and point-defects in III-As layers for silicon photonics applications
  143. A Physics-Based Approach to Model Hot-Electron Trapping Kinetics in p-GaN HEMTs
  144. Challenges and Perspectives for Vertical GaN-on-Si Trench MOS Reliability: From Leakage Current Analysis to Gate Stack Optimization
  145. Understanding the Leakage Mechanisms and Breakdown Limits of Vertical GaN-on-Si p+n−n Diodes: The Road to Reliable Vertical MOSFETs
  146. Decrease in the injection efficiency and generation of midgap states in UV-C LEDs: a model based on rate equations
  147. How does an In-containing underlayer prevent the propagation of defects in InGaN QW LEDs?: identification of SRH centers and modeling of trap profile
  148. Hydrogen-terminated diamond MESFETs: operating principles, static and dynamic performance, and reliability
  149. Impact of dislocation density on performance and reliability of 1.3 μm InAs quantum dot lasers epitaxially grown on silicon
  150. Trapping processes and band discontinuities in Ga2O3 FinFETs investigated by dynamic characterization and optically-assisted measurements
  151. A Generalized Approach to Determine the Switching Reliability of GaN HEMTs on-Wafer Level
  152. Role of the AlGaN Cap Layer on the Trapping Behaviour of N-Polar GaN MISHEMTs
  153. Gradual Degradation of InGaAs LEDs: Impact on Non-Radiative Lifetime and Extraction of Defect Characteristics
  154. Degradation of 1.3 μm InAs Quantum-Dot Laser Diodes: Impact of Dislocation Density and Number of Quantum Dot Layers
  155. Full Optical Contactless Thermometry Based on LED Photoluminescence
  156. Cumulative Hot-Electron Trapping in GaN-Based Power HEMTs Observed by an Ultra-Fast (10V/ns) on-Wafer Methodology
  157. Degradation mechanisms of InGaN visible LEDs and AlGaN UV LEDs
  158. Carrier capture kinetics, deep levels, and isolation properties of β-Ga2O3 Schottky-barrier diodes damaged by nitrogen implantation
  159. Highly stable threshold voltage in GaN nanowire FETs: The advantages of p-GaN channel/Al2O3 gate insulator
  160. Understanding the effects of off-state and hard-switching stress in gallium nitride-based power transistors
  161. Excitation Intensity and Temperature-Dependent Performance of InGaN/GaN Multiple Quantum Wells Photodetectors
  162. A novel on-wafer approach to test the stability of GaN-based devices in hard switching conditions: Study of hot-electron effects
  163. Degradation mechanism of 0.15 μm AlGaN/GaN HEMTs: effects of hot electrons
  164. Degradation mechanisms in high power InGaN semiconductor lasers investigated by electrical, optical, spectral and C-DLTS measurements
  165. Exploration of gate trench module for vertical GaN devices
  166. GaN-based high-periodicity multiple quantum well solar cells: Degradation under optical and electrical stress
  167. Non thermally-activated transients and buffer traps in GaN transistors with p-type gate: A new method for extracting the activation energy
  168. OFF-state trapping phenomena in GaN HEMTs: Interplay between gate trapping, acceptor ionization and positive charge redistribution
  169. Reliability of H-terminated diamond MESFETs in high power dissipation operating condition
  170. Modeling the degradation mechanisms of AlGaN-based UV-C LEDs: from injection efficiency to mid-gap state generation
  171. Use of Bilayer Gate Insulator in GaN-on-Si Vertical Trench MOSFETs: Impact on Performance and Reliability
  172. Defect incorporation in In-containing layers and quantum wells: experimental analysis via deep level profiling and optical spectroscopy
  173. Root cause analysis of gate shorts in semi-vertical GaN MOSFET devices
  174. The 2020 UV emitter roadmap
  175. GaN Vertical p–i–n Diodes in Avalanche Regime: Time-Dependent Behavior and Degradation
  176. Short Term Reliability and Robustness of ultra-thin barrier, 110 nrn-gate AlN/GaN HEMTs
  177. Thermal droop in III-nitride based light-emitting diodes: Physical origin and perspectives
  178. Efficiency and Catastrophic Failure of High-Power Blue GaN LEDs During Extremely High Temperature and Current Stress
  179. Storage and release of buffer charge in GaN-on-Si HEMTs investigated by transient measurements
  180. Degradation of InGaN-based LEDs: Demonstration of a recombination-dependent defect-generation process
  181. Charge Trapping and Stability of E-Mode p-gate GaN HEMTs Under Soft- and Hard- Switching Conditions
  182. Demonstration of Bilayer Gate Insulator for Improved Reliability in GaN-on-Si Vertical Transistors
  183. Charge trapping and degradation of Ga2O3 isolation structures for power electronics
  184. Degradation effects and origin in H-terminated diamond MESFETs
  185. Observation of ID-VD Kink in N-Polar GaN MIS-HEMTs at Cryogenic Temperatures
  186. Investigation of Current-Driven Degradation of 1.3 μm Quantum-Dot Lasers Epitaxially Grown on Silicon
  187. Dependence of degradation on InGaN quantum well position: a study based on color coded structures
  188. Demonstration of current-dependent degradation of quantum-dot lasers grown on silicon: role of defect diffusion processes
  189. Degradation and recovery of high-periodicity InGaN/GaN MQWs under optical stress in short-circuit condition
  190. Degradation mechanisms of 1.6 W blue semiconductor lasers: effect on subthreshold optical power and power spectral density
  191. Role of defects in the mid-term degradation of UV-B LEDs investigated by optical and DLTS measurements
  192. Modeling of the Vertical Leakage Current in AlN/Si Heterojunctions for GaN Power Applications
  193. Modeling of gate capacitance of GaN-based trench-gate vertical metal-oxide-semiconductor devices
  194. Analysis of threshold voltage instabilities in semi-vertical GaN-on-Si FETs
  195. Degradation Mechanisms of GaN‐Based Vertical Devices: A Review
  196. Vertical Leakage in GaN-on-Si Stacks Investigated by a Buffer Decomposition Experiment
  197. Impact of Residual Carbon on Avalanche Voltage and Stability of Polarization-Induced Vertical GaN p-n Junction
  198. Trapping and Detrapping Mechanisms in β-Ga₂O₃ Vertical FinFETs Investigated by Electro-Optical Measurements
  199. A Novel Physics-Based Approach to Analyze and Model E-Mode p-GaN Power HEMTs
  200. Cause and Effects of off-State Degradation in Hydrogen-Terminated Diamond MESFETs
  201. Geometric Modeling of Thermal Resistance in GaN HEMTs on Silicon
  202. Characterization of charge trapping mechanisms in GaN vertical Fin FETs under positive gate bias
  203. Investigation into trapping modes and threshold instabilities of state-of-art commercial GaN HEMTs
  204. Linearity and robustness evaluation of 150-nm AlN/GaN HEMTs
  205. Reliability comparison of AlGaN/GaN HEMTs with different carbon doping concentration
  206. Stability and degradation of AlGaN-based UV-B LEDs: Role of doping and semiconductor defects
  207. Stability and degradation of isolation and surface in Ga2O3 devices
  208. Positive temperature dependence of time-dependent breakdown of GaN-on-Si E-mode HEMTs under positive gate stress
  209. Enhanced semiclassical simulation of InGaN/GaN multi-quantum-well solar cells
  210. Physical Origin of the Optical Degradation of InAs Quantum Dot Lasers
  211. Degradation processes of 280 nm high power DUV LEDs: impact on parasitic luminescence
  212. Evidence for defect-assisted tunneling and recombination at extremely low current in InGaN/GaN-based LEDs
  213. Sintered glass ceramics for high-power white-light-emitting diodes (Conference Presentation)
  214. Challenges for highly-reliable GaN-based LEDs
  215. Degradation mechanisms of InAs quantum dot 1.3 um laser diodes epitaxially grown on silicon
  216. Degradation physics of GaN-based lateral and vertical devices
  217. Evidence for avalanche generation in reverse-biased InGaN LEDs
  218. GaN-based lateral and vertical devices: physical mechanisms limiting stability and reliability
  219. Hot-Electron Effects in GaN GITs and HD-GITs: A Comprehensive Analysis
  220. Origin of the low-forward leakage current in InGaN-based LEDs
  221. Gate Reliability of p-GaN gate AlGaN/GaN High Electron Mobility Transistors
  222. Demonstration of UV-Induced Threshold Voltage Instabilities in Vertical GaN Nanowire Array-Based Transistors
  223. High-Current Stress of UV-B (In)AlGaN-Based LEDs: Defect-Generation and Diffusion Processes
  224. Breakdown Walkout in Polarization-Doped Vertical GaN Diodes
  225. Reliability of Ultraviolet Light-Emitting Diodes
  226. Demonstration of avalanche capability in polarization-doped vertical GaN pn diodes: study of walkout due to residual carbon concentration
  227. Power GaN HEMT degradation: from time-dependent breakdown to hot-electron effects
  228. Evidence of optically induced degradation in gallium nitride optoelectronic devices
  229. Current induced degradation study on state of the art DUV LEDs
  230. Degradation mechanisms of heterogeneous III-V/Silicon loop-mirror laser diodes for photonic integrated circuits
  231. Degradation of GaN-on-GaN vertical diodes submitted to high current stress
  232. Degradation of vertical GaN-on-GaN fin transistors: Step-stress and constant voltage experiments
  233. Failure limits and electro-optical characteristics of GaN-based LEDs under electrical overstress
  234. Impact of dislocations on DLTS spectra and degradation of InGaN-based laser diodes
  235. On-wafer RF stress and trapping kinetics of Fe-doped AlGaN/GaN HEMTs
  236. Reliability of Blue-Emitting Eu2+-Doped Phosphors for Laser-Lighting Applications
  237. Observation of Hot Electron and Impact Ionization in N-Polar GaN MIS-HEMTs
  238. Review of dynamic effects and reliability of depletion and enhancement GaN HEMTs for power switching applications
  239. The 2018 GaN power electronics roadmap
  240. Degradation of vertical GaN FETs under gate and drain stress
  241. Degradation processes and origin in InGaN-based high-power photodetectors
  242. Defect-related degradation of III-V/Silicon 1.55 µm DBR laser diodes
  243. Defect-generation and diffusion in (In)AlGaN-based UV-B LEDs submitted to constant current stress
  244. GaN-Based Laser Wireless Power Transfer System
  245. Positive and negative threshold voltage instabilities in GaN-based transistors
  246. 2DEG Retraction and Potential Distribution of GaN-on-Si HEMTs Investigated Through a Floating Gate Terminal
  247. Hot-Electron Trapping and Hole-Induced Detrapping in GaN-Based GITs and HD-GITs
  248. Physical mechanisms limiting the performance and the reliability of GaN-based LEDs
  249. Internal checkup illumination sources for METIS coronagraph on solar orbiter
  250. Laser-Based Lighting: Experimental Analysis and Perspectives
  251. Understanding the degradation processes of GaN based LEDs submitted to extremely high current density
  252. Degradation of InGaN-based MQW solar cells under 405 nm laser excitation
  253. Evidence of Hot-Electron Effects During Hard Switching of AlGaN/GaN HEMTs
  254. Long-term degradation of InGaN-based laser diodes: Role of defects
  255. Degradation Mechanisms of Heterogeneous III-V/Silicon 1.55- $\mu \text{m}$ DBR Laser Diodes
  256. Chip-Level Degradation of InGaN-Based Optoelectronic Devices
  257. Effect of Varying Three-Dimensional Strain on the Emission Properties of Light-Emitting Diodes Based on (In,Ga)N/GaN Nanowires
  258. Reliability and failure analysis in power GaN-HEMTs: An overview
  259. Degradation of GaN-HEMTs with p-GaN Gate: Dependence on temperature and on geometry
  260. Recombination mechanisms and thermal droop in AlGaN-based UV-B LEDs
  261. Failure of High Power LEDs Submitted to EOS: Dependence on Device Layout and Pulse Properties
  262. Investigation of the time-dependent failure of InGaN-based LEDs submitted to reverse-bias stress
  263. Defect generation in deep-UV AlGaN-based LEDs investigated by electrical and spectroscopic characterisation
  264. GaN HEMTs with p-GaN gate: field- and time-dependent degradation
  265. Defect-Related Degradation of AlGaN-Based UV-B LEDs
  266. Performance-Limiting Traps in GaN-Based HEMTs: From Native Defects to Common Impurities
  267. Degradation of InGaN-based LEDs related to charge diffusion and build-up
  268. Experimental observation of TDDB-like behavior in reverse-biased green InGaN LEDs
  269. Degradation of InGaN laser diodes caused by temperature- and current-driven diffusion processes
  270. High-Resolution Cathodoluminescence Investigation of Degradation Processes in InGaN Green Laser Diodes
  271. Field-dependent degradation mechanisms in GaN-based HEMTs
  272. Degradation of UV-A LEDs: Physical Origin and Dependence on Stress Conditions
  273. Time-Dependent Failure of GaN-on-Si Power HEMTs With p-GaN Gate
  274. Reliability of Gallium Nitride microwave transistors
  275. Experimental Demonstration of Time-Dependent Breakdown in GaN-Based Light Emitting Diodes
  276. Thermal droop in InGaN-based LEDs: physical origin and dependence on material properties
  277. Aging behavior, reliability, and failure physics of GaN-based optoelectronic components
  278. Role of defects in the thermal droop of InGaN-based light emitting diodes
  279. Challenges towards the simulation of GaN-based LEDs beyond the semiclassical framework
  280. Nanoscale Investigation of Degradation and Wavelength Fluctuations in InGaN-Based Green Laser Diodes
  281. A physical model for the reverse leakage current in (In,Ga)N/GaN light-emitting diodes based on nanowires
  282. Reliability of mid-power LEDs for lighting applications
  283. Towards high reliability GaN LEDs: Understanding the physical origin of gradual and catastrophic failure
  284. Analysis of the mechanisms limiting the reliability of retrofit LED lamps
  285. Long-term degradation mechanisms of mid-power LEDs for lighting applications
  286. Failure causes and mechanisms of retrofit LED lamps
  287. Ageing of InGaN-based LEDs: Effects on internal quantum efficiency and role of defects
  288. Degradation mechanisms and lifetime of state-of-the-art green laser diodes
  289. Deep level transient spectroscopy on light-emitting diodes based on (In,Ga)N/GaN nanowire ensembles
  290. Trapping processes related to iron and carbon doping in AlGaN/GaN power HEMTs
  291. Defects in GaN-based LEDs: impact on internal quantum efficiency and on reliability
  292. Degradation of InGaN based green laser kinetics and driving forces diodes
  293. Recoverable degradation of blue InGaN-based light emitting diodes submitted to 3 MeV proton irradiation
  294. Physical effects limiting performance and reliability of GaN High Electron Mobility Transistors
  295. Thermally-activated degradation of InGaN-based laser diodes: Effect on threshold current and forward voltage
  296. ESD on GaN-based LEDs: An analysis based on dynamic electroluminescence measurements and current waveforms
  297. Gate frequency sweep: An effective method to evaluate the dynamic performance of AlGaN/GaN power heterojunction field effect transistors
  298. Deep-Level Characterization in GaN HEMTs-Part I: Advantages and Limitations of Drain Current Transient Measurements
  299. Degradation of AlGaN/GaN HEMT devices: Role of reverse-bias and hot electron stress
  300. Variations in junction capacitance and doping activation associated with electrical stress of InGaN/GaN laser diodes
  301. GaN-HEMTs devices with single- and double-heterostructure for power switching applications
  302. Time- and Field-Dependent Trapping in GaN-Based Enhancement-Mode Transistors With p-Gate
  303. Analysis of the deep level responsible for the degradation of InGaN-based laser diodes by DLTS
  304. Degradation of InGaN lasers: Role of non-radiative recombination and injection efficiency
  305. Investigation of the deep level involved in InGaN laser degradation by deep level transient spectroscopy