All Stories

  1. Degradation of 1.3 μm Quantum Dot Laser Diodes for Silicon Photonics: Dependence on the Number of Dot-in-a-Well Layers
  2. Impact of the Oxide Aperture Width on the Degradation of 845 Nm VCSELs for Silicon Photonics
  3. Recovery of drain-induced threshold voltage shift by positive gate bias in GaN power HEMTs with p-GaN gate
  4. Quality Assessment of Perovskite Solar Cells: An Industrial Point of View
  5. Investigation and modeling of the role of interface defects in the optical degradation of InGaN/GaN LEDs
  6. Advanced defect spectroscopy in wide-bandgap semiconductors: review and recent results
  7. Origin and Recovery of Negative VTH Shift on 4H–SiC MOS Capacitors: An Analysis Based on Inverse Laplace Transform and Temperature-Dependent Measurements
  8. Investigation of degradation dynamics of 265 nm LEDs assisted by EL measurements and numerical simulations
  9. Positive VTH Shift in Schottky p-GaN Gate Power HEMTs: Dependence on Temperature, Bias and Gate Leakage
  10. Charge Trapping in SiC MOSFETs under Constant Gate Current Stress: Analysis Based on Charge Pumping Measurements
  11. Deep Level Effects in N-Polar AlGaN/GaN High Electron Mobility Transistors: Toward Zero Dispersion Effects
  12. On-Wafer Dynamic Operation of Power GaN-HEMTs: Degradation Processes Investigated by a Novel Experimental Approach
  13. $\mathrm{R}_{\text{ON}}$ and $\mathrm{V}_{\text{TH}}$ Extraction in Hard-Switched E-mode GaN HEMTs: Impact of Passivation and Layout
  14. Role of Gate Hole Injection in Minimizing Substrate Coupling and Electron Trapping in AlGaN/GaN Power HEMTs
  15. Threshold Voltage Drift and Recovery of SiC Trench MOSFETs During TDDB Stress
  16. Modeling of the gate leakage in MOSFETs with Al2O3/β-Ga2O3 gate stack
  17. Defects, performance, and reliability in UVC LEDs
  18. Robustness and reliability of high-power white LEDs under high-temperature, high-current stress
  19. Undestanding commercial UVC LEDs reliability to boost disinfection efficacy
  20. Semitransparent perovskite solar cells for Si tandem and agrivoltaic integration
  21. Antimony selenide solar cells: non-ideal deep level response and study of trap-filling transients
  22. Influence of V-pits on the electro-optical properties of high-periodicity InGaN MQWs
  23. Lifetime-limiting mechanisms of integrated IR sources for silicon photonics
  24. Physical insights into trapping effects on vertical GaN-on-Si trench MOSFETs from TCAD
  25. Modeling the Electrical Degradation of Micro-Transfer Printed 845 nm VCSILs for Silicon Photonics
  26. Review and Outlook on GaN and SiC Power Devices: Industrial State-of-the-Art, Applications, and Perspectives
  27. Modeling of the electrical characteristics and degradation mechanisms of UV-C LEDs
  28. V-Pits and Trench-Like Defects in High Periodicity MQWs GaN-Based Solar Cells: Extensive Electro-Optical Analysis
  29. TCAD Modeling and Simulation of Dark Current-Voltage Characteristics in High-Periodicity InGaN/GaN Multiple-Quantum-Wells (MQWs) Solar Cells
  30. Fast Characterization of Power LEDs: Circuit Design and Experimental Results
  31. Experimental and Numerical Analysis of OFFState Bias Induced Instabilities in Vertical GaNon-Si Trench MOSFETs
  32. Negative Activation Energy of Gate Reliability in Schottky-Gate p-GaN HEMTs: Combined Gate Leakage Current Modeling and Spectral Electroluminescence Investigation
  33. Addressing the Optical Degradation of 1.3 μm Quantum Dot Lasers through Subthreshold Characterization
  34. A novel in-situ approach to monitor the variations in the on-resistance of power transistors during switching operation
  35. Early failure of high-power white LEDs for outdoor applications under extreme electrical stress: Role of silicone encapsulant
  36. Impact of high-temperature operating lifetime tests on the stability of 0.15 μm AlGaN/GaN HEMTs: A temperature-dependent analysis
  37. Threshold voltage instability in SiO2-gate semi-vertical GaN trench MOSFETs grown on silicon substrate
  38. Trade-off between gate leakage current and threshold voltage stability in power HEMTs during ON-state and OFF-state stress
  39. Bias-dependent degradation of single quantum well on InGaN-based light emitting diode
  40. Scaling of E-mode power GaN-HEMTs for low voltage/low Ron applications: Implications on robustness
  41. On the importance of Fast and Accurate LED Optical and Thermal Characterization: from visible use cases to UV technologies
  42. Addressing the electrical degradation of 845 nm micro-transfer printed VCSILs through TCAD simulations
  43. Modeling the electrical characteristic and degradation mechanisms of UV-C LEDs
  44. Gate leakage modeling in lateral β -Ga2O3 MOSFETs with Al2O3 gate dielectric
  45. Solid State Lighting for horticolture: impact of LED reliability on light spectrum and intensity
  46. Performance and Degradation of Commercial Ultraviolet‐C Light‐Emitting Diodes for Disinfection Purposes
  47. Degradation of AlGaN-based UV-C SQW LEDs analyzed by means of capacitance deep-level transient spectroscopy and numerical simulations
  48. Modeling the electrical degradation of AlGaN-based UV-C LEDs by combined deep-level optical spectroscopy and TCAD simulations
  49. Influence of Mg-doping on UV-C LEDs and model of optical power degradation
  50. Dynamical properties and performances of ß-Ga2O3 UVC photodetectors of extreme solar blindness
  51. Analysis of defect-related optical degradation of VCSILs for photonic integrated circuits
  52. Degradation of AlGaN-based SQW UV-C LEDs investigated by capacitance deep level transient spectroscopy
  53. Degradation of GaN-based InGaN-GaN MQWs solar cells caused by thermally-activated diffusion
  54. Experimental analysis of degradation of multi-quantum well GaN based solar cells under current stress
  55. Improving the reliability of InAs quantum-dot laser diodes for silicon photonics: the role of trapping layers and misfit-dislocation density
  56. Degradation mechanisms of laser diodes for silicon photonics applications
  57. III-N optoelectronic devices: understanding the physics of electro-optical degradation
  58. Injection-limited efficiency of InGaN LEDs and impact on electro-optical performance and ageing: a case study
  59. UVC LED reliability and its effect on disinfection systems design
  60. Trapping in $\text{Al}_{2}\mathrm{O}_{3}/\text{GaN}$ MOScaps investigated by fast capacitive techniques
  61. High- Temperature PBTI in Trench-Gate Vertical GaN Power MOSFETs: Role of Border and Semiconductor Traps
  62. Thermally-activated failure mechanisms of 0.25 \ \mu \mathrm{m}$ RF AIGaN/GaN HEMTs submitted to long-term life tests
  63. Optically Induced Degradation Due to Thermally Activated Diffusion in GaN-Based InGaN/GaN MQW Solar Cells
  64. Transconductance Overshoot, a New Trap-Related Effect in AlGaN/GaN HEMTs
  65. Degradation of GaN-Based Multiple Quantum Wells Solar Cells Under Forward Bias: Investigation Based on Optical Measurements and Steady-State Photocapacitance
  66. Understanding the optical degradation of 845nm micro-transfer-printed VCSILs for photonic integrated circuits
  67. On the CET-Map Ill-Posed Inversion Problem: Theory and Application to GaN HEMTs
  68. Mechanisms of Step-Stress Degradation In Carbon-Doped 0.15 μm Algan/Gan Hemts for Power RF Applications
  69. Status of Performance and Reliability of 265 nm Commercial UV-C LEDs in 2023
  70. Influence of V-Pits on the Turn-On Voltage of GaN-Based High Periodicity Multiple Quantum Well Solar Cells
  71. Microwave and Millimeter-Wave GaN HEMTs: Impact of Epitaxial Structure on Short-Channel Effects, Electron Trapping, and Reliability
  72. Dynamic Behavior of Threshold Voltage and $\textit{I}_{\text{D}}$–$\textit{V}_{\text{DS}}$ Kink in AlGaN/GaN HEMTs Due to Poole–Frenkel Effect
  73. Correlating Interface and Border Traps With Distinctive Features of C–V Curves in Vertical Al$_{\text{2}}$O$_{\text{3}}$/GaN MOS Capacitors
  74. Failure Physics and Reliability of GaN‐Based HEMTs for Microwave and Millimeter‐Wave Applications: A Review of Consolidated Data and Recent Results
  75. GaN-Based Lateral and Vertical Devices
  76. Capture and emission time map to investigate the positive VTH shift in p-GaN power HEMTs
  77. Cryogenic-temperature investigation of negative bias stress inducing threshold voltage instabilities on 4H-SiC MOSFETs
  78. Impact of a defect trapping layer on the reliability of 1.3 μm quantum dot laser diodes grown on silicon
  79. Role of p-GaN layer thickness in the degradation of InGaN-GaN MQW solar cells under 405 nm laser excitation
  80. Comparison between Cu(In,Ga)Se2 solar cells with different back contacts submitted to current stress
  81. Impact of doping and geometry on breakdown voltage of semi-vertical GaN-on-Si MOS capacitors
  82. Isolation properties and failure mechanisms of vertical Pt / n-GaN SBDs
  83. Modeling the electrical characteristic of InGaN/GaN blue-violet LED structure under electrical stress
  84. Study of the influence of gate etching and passivation on current dispersion, trapping and reliability in RF 0.15 μm AlGaN/GaN HEMTs
  85. Impact of Generation and Relocation of Defects on Optical Degradation of Multi-Quantum-Well InGaN/GaN-Based Light-Emitting Diode
  86. Quantum efficiency of InGaN–GaN multi-quantum well solar cells: Experimental characterization and modeling
  87. Cryogenic Ultra-Fast Bias Temperature Instability Trap Profiling of SiC MOSFETs
  88. Logarithmic trapping and detrapping in β-Ga2O3 MOSFETs: Experimental analysis and modeling
  89. Study and characterization of GaN MOS capacitors: Planar vs trench topographies
  90. Time-dependent degradation of hydrogen-terminated diamond MESFETs
  91. Conduction properties and threshold voltage instability in β-Ga2O3 MOSFETs
  92. Deep levels and conduction processes in nitrogen-implanted Ga2O3 Schottky barrier diodes
  93. Role of carbon in dynamic effects and reliability of 0.15-um AlGaN/GaN HEMTs for RF power amplifiers
  94. Deep defects in InGaN LEDs: modeling the impact on the electrical characteristics
  95. GaN-based solar cells degradation kinetics investigated at high temperature under high-intensity 405nm optical stress
  96. On the performance and reliability of state-of-the-art commercial UV-C LEDs for disinfection purposes
  97. UV LED reliability: degradation mechanisms and challenges
  98. Investigation of deep level defects in n-type GaAsBi
  99. Analysis of dislocation-related and point-defects in III-As layers by extensive DLTS study
  100. Defects in III-N LEDs: experimental identification and impact on electro-optical characteristics
  101. Modeling the effect of spatial position and concentration of defects on optical degradation of InGaN/GaN multi quantum well light emitting diodes
  102. Optical degradation of InAs quantum-dot lasers on silicon: dependence on temperature and on diffusion processes
  103. Optical temperature measurement across IR opaque Iayers by means of visible excitation and photoluminescence
  104. Analysis and Modeling of Vth Shift in 4H-SiC MOSFETs at Room and Cryogenic-Temperature
  105. Deep level effects and degradation of 0.15 μm RF AlGaN/GaN HEMTs with Mono-layer and Bi-layer AlGaN backbarrier
  106. GaN RF HEMT Reliability: Impact of Device Processing on I-V Curve Stability and Current Collapse
  107. Influence of Drain and Gate Potential on Gate Failure in Semi-Vertical GaN-on-Si Trench MOSFETs
  108. Modeling Hot-Electron Trapping in GaN-based HEMTs
  109. Reliability of Commercial UVC LEDs: 2022 State-of-the-Art
  110. Defects and Reliability of GaN‐Based LEDs: Review and Perspectives
  111. Trap-state mapping to model GaN transistors dynamic performance
  112. Photon-induced degradation of InGaN-based LED in open-circuit conditions investigated by steady-state photocapacitance and photoluminescence
  113. Laser-induced activation of Mg-doped GaN: quantitative characterization and analysis
  114. Origin of the Diffusion-Related Optical Degradation of 1.3 μm Inas QD-LDs Epitaxially Grown on Silicon Substrate
  115. Compact Modeling of Nonideal Trapping/Detrapping Processes in GaN Power Devices
  116. Analysis of current transport layer localized resistivity increase after high stress on InGaN LEDs
  117. Impact of thermal annealing on deep levels in nitrogen-implanted β-Ga2O3 Schottky barrier diodes
  118. Charge Trapping in GaN Power Transistors: Challenges and Perspectives
  119. GaN-based power devices: Physics, reliability, and perspectives
  120. A Review of the Reliability of Integrated IR Laser Diodes for Silicon Photonics
  121. Dynamic and Capacitive Characterization of 3D GaN n-p-n Vertical Fin-FETs
  122. Detrapping Kinetics in N-polar AlGaN/GaN MIS-HEMTs
  123. Microstructural Degradation Investigations of OFF-State Stressed 0.15 μm RF AlGaN/GaN HEMTs: Failure Mode related Breakdown
  124. Review on the degradation of GaN-based lateral power transistors
  125. Degradation mechanisms of 1.3 μm C-doped quantum dot lasers grown on native substrate
  126. Effect of indium content and carrier distribution on the efficiency and reliability of InGaN/GaN-based multi quantum well light emitting diode
  127. Positive and negative charge trapping GaN HEMTs: Interplay between thermal emission and transport-limited processes
  128. Vertical GaN devices: Process and reliability
  129. Charge trapping in 0.1 μm AlGaN/GaN RF HEMTs: Dependence on barrier properties, voltage and temperature
  130. Electrical, optical characterization and degradation of Cu(InGa)Se2 devices with fluorine-doped tin oxide back contact
  131. Impact of an AlGaN spike in the buffer in 0.15 μm AlGaN/GaN HEMTs during step stress
  132. Nonequilibrium Green’s Function Modeling of Trap-Assisted Tunneling in InxGa1−xN /GaN Light-Emitting Diodes
  133. Non-monotonic threshold voltage variation in 4H-SiC metal–oxide–semiconductor field-effect transistor: Investigation and modeling
  134. Current crowding as a major cause for InGaN LED degradation at extreme high current density
  135. Effects of quantum-well indium content on deep defects and reliability of InGaN/GaN light-emitting diodes with under layer
  136. Failure mechanisms of GaN HEMTs for microwave and millimeter-wave applications: from interdiffusion effects to hot-electrons degradation
  137. Dynamic Performance Characterization Techniques in Gallium Nitride-Based Electronic Devices
  138. Modeling the electrical characteristics of InGaN/GaN LED structures based on experimentally-measured defect characteristics
  139. Short term reliability and robustness of ultra-thin barrier, 110 nm-gate AlN/GaN HEMTs
  140. UV-Based Technologies for SARS-CoV2 Inactivation: Status and Perspectives
  141. Glass-ceramic composites for high-power white-light-emitting diodes
  142. Deep levels and carrier capture kinetics in n-GaAsBi alloys investigated by deep level transient spectroscopy
  143. Identification of dislocation-related and point-defects in III-As layers for silicon photonics applications
  144. A Physics-Based Approach to Model Hot-Electron Trapping Kinetics in p-GaN HEMTs
  145. Challenges and Perspectives for Vertical GaN-on-Si Trench MOS Reliability: From Leakage Current Analysis to Gate Stack Optimization
  146. Understanding the Leakage Mechanisms and Breakdown Limits of Vertical GaN-on-Si p+n−n Diodes: The Road to Reliable Vertical MOSFETs
  147. Decrease in the injection efficiency and generation of midgap states in UV-C LEDs: a model based on rate equations
  148. How does an In-containing underlayer prevent the propagation of defects in InGaN QW LEDs?: identification of SRH centers and modeling of trap profile
  149. Hydrogen-terminated diamond MESFETs: operating principles, static and dynamic performance, and reliability
  150. Impact of dislocation density on performance and reliability of 1.3 μm InAs quantum dot lasers epitaxially grown on silicon
  151. Trapping processes and band discontinuities in Ga2O3 FinFETs investigated by dynamic characterization and optically-assisted measurements
  152. A Generalized Approach to Determine the Switching Reliability of GaN HEMTs on-Wafer Level
  153. Role of the AlGaN Cap Layer on the Trapping Behaviour of N-Polar GaN MISHEMTs
  154. Gradual Degradation of InGaAs LEDs: Impact on Non-Radiative Lifetime and Extraction of Defect Characteristics
  155. Degradation of 1.3 μm InAs Quantum-Dot Laser Diodes: Impact of Dislocation Density and Number of Quantum Dot Layers
  156. Full Optical Contactless Thermometry Based on LED Photoluminescence
  157. Cumulative Hot-Electron Trapping in GaN-Based Power HEMTs Observed by an Ultra-Fast (10V/ns) on-Wafer Methodology
  158. Degradation mechanisms of InGaN visible LEDs and AlGaN UV LEDs
  159. Carrier capture kinetics, deep levels, and isolation properties of β-Ga2O3 Schottky-barrier diodes damaged by nitrogen implantation
  160. Highly stable threshold voltage in GaN nanowire FETs: The advantages of p-GaN channel/Al2O3 gate insulator
  161. Understanding the effects of off-state and hard-switching stress in gallium nitride-based power transistors
  162. Excitation Intensity and Temperature-Dependent Performance of InGaN/GaN Multiple Quantum Wells Photodetectors
  163. A novel on-wafer approach to test the stability of GaN-based devices in hard switching conditions: Study of hot-electron effects
  164. Degradation mechanism of 0.15 μm AlGaN/GaN HEMTs: effects of hot electrons
  165. Degradation mechanisms in high power InGaN semiconductor lasers investigated by electrical, optical, spectral and C-DLTS measurements
  166. Exploration of gate trench module for vertical GaN devices
  167. GaN-based high-periodicity multiple quantum well solar cells: Degradation under optical and electrical stress
  168. Non thermally-activated transients and buffer traps in GaN transistors with p-type gate: A new method for extracting the activation energy
  169. OFF-state trapping phenomena in GaN HEMTs: Interplay between gate trapping, acceptor ionization and positive charge redistribution
  170. Reliability of H-terminated diamond MESFETs in high power dissipation operating condition
  171. Modeling the degradation mechanisms of AlGaN-based UV-C LEDs: from injection efficiency to mid-gap state generation
  172. Use of Bilayer Gate Insulator in GaN-on-Si Vertical Trench MOSFETs: Impact on Performance and Reliability
  173. Defect incorporation in In-containing layers and quantum wells: experimental analysis via deep level profiling and optical spectroscopy
  174. Root cause analysis of gate shorts in semi-vertical GaN MOSFET devices
  175. The 2020 UV emitter roadmap
  176. GaN Vertical p–i–n Diodes in Avalanche Regime: Time-Dependent Behavior and Degradation
  177. Short Term Reliability and Robustness of ultra-thin barrier, 110 nrn-gate AlN/GaN HEMTs
  178. Thermal droop in III-nitride based light-emitting diodes: Physical origin and perspectives
  179. Efficiency and Catastrophic Failure of High-Power Blue GaN LEDs During Extremely High Temperature and Current Stress
  180. Storage and release of buffer charge in GaN-on-Si HEMTs investigated by transient measurements
  181. Degradation of InGaN-based LEDs: Demonstration of a recombination-dependent defect-generation process
  182. Charge Trapping and Stability of E-Mode p-gate GaN HEMTs Under Soft- and Hard- Switching Conditions
  183. Demonstration of Bilayer Gate Insulator for Improved Reliability in GaN-on-Si Vertical Transistors
  184. Charge trapping and degradation of Ga2O3 isolation structures for power electronics
  185. Degradation effects and origin in H-terminated diamond MESFETs
  186. Observation of ID-VD Kink in N-Polar GaN MIS-HEMTs at Cryogenic Temperatures
  187. Investigation of Current-Driven Degradation of 1.3 μm Quantum-Dot Lasers Epitaxially Grown on Silicon
  188. Dependence of degradation on InGaN quantum well position: a study based on color coded structures
  189. Demonstration of current-dependent degradation of quantum-dot lasers grown on silicon: role of defect diffusion processes
  190. Degradation and recovery of high-periodicity InGaN/GaN MQWs under optical stress in short-circuit condition
  191. Degradation mechanisms of 1.6 W blue semiconductor lasers: effect on subthreshold optical power and power spectral density
  192. Role of defects in the mid-term degradation of UV-B LEDs investigated by optical and DLTS measurements
  193. Modeling of the Vertical Leakage Current in AlN/Si Heterojunctions for GaN Power Applications
  194. Modeling of gate capacitance of GaN-based trench-gate vertical metal-oxide-semiconductor devices
  195. Analysis of threshold voltage instabilities in semi-vertical GaN-on-Si FETs
  196. Degradation Mechanisms of GaN‐Based Vertical Devices: A Review
  197. Vertical Leakage in GaN-on-Si Stacks Investigated by a Buffer Decomposition Experiment
  198. Impact of Residual Carbon on Avalanche Voltage and Stability of Polarization-Induced Vertical GaN p-n Junction
  199. Trapping and Detrapping Mechanisms in β-Ga₂O₃ Vertical FinFETs Investigated by Electro-Optical Measurements
  200. A Novel Physics-Based Approach to Analyze and Model E-Mode p-GaN Power HEMTs
  201. Cause and Effects of off-State Degradation in Hydrogen-Terminated Diamond MESFETs
  202. Geometric Modeling of Thermal Resistance in GaN HEMTs on Silicon
  203. Characterization of charge trapping mechanisms in GaN vertical Fin FETs under positive gate bias
  204. Investigation into trapping modes and threshold instabilities of state-of-art commercial GaN HEMTs
  205. Linearity and robustness evaluation of 150-nm AlN/GaN HEMTs
  206. Reliability comparison of AlGaN/GaN HEMTs with different carbon doping concentration
  207. Stability and degradation of AlGaN-based UV-B LEDs: Role of doping and semiconductor defects
  208. Stability and degradation of isolation and surface in Ga2O3 devices
  209. Positive temperature dependence of time-dependent breakdown of GaN-on-Si E-mode HEMTs under positive gate stress
  210. Enhanced semiclassical simulation of InGaN/GaN multi-quantum-well solar cells
  211. Physical Origin of the Optical Degradation of InAs Quantum Dot Lasers
  212. Degradation processes of 280 nm high power DUV LEDs: impact on parasitic luminescence
  213. Evidence for defect-assisted tunneling and recombination at extremely low current in InGaN/GaN-based LEDs
  214. Sintered glass ceramics for high-power white-light-emitting diodes (Conference Presentation)
  215. Challenges for highly-reliable GaN-based LEDs
  216. Degradation mechanisms of InAs quantum dot 1.3 um laser diodes epitaxially grown on silicon
  217. Degradation physics of GaN-based lateral and vertical devices
  218. Evidence for avalanche generation in reverse-biased InGaN LEDs
  219. GaN-based lateral and vertical devices: physical mechanisms limiting stability and reliability
  220. Hot-Electron Effects in GaN GITs and HD-GITs: A Comprehensive Analysis
  221. Origin of the low-forward leakage current in InGaN-based LEDs
  222. Gate Reliability of p-GaN gate AlGaN/GaN High Electron Mobility Transistors
  223. Demonstration of UV-Induced Threshold Voltage Instabilities in Vertical GaN Nanowire Array-Based Transistors
  224. High-Current Stress of UV-B (In)AlGaN-Based LEDs: Defect-Generation and Diffusion Processes
  225. Breakdown Walkout in Polarization-Doped Vertical GaN Diodes
  226. Reliability of Ultraviolet Light-Emitting Diodes
  227. Demonstration of avalanche capability in polarization-doped vertical GaN pn diodes: study of walkout due to residual carbon concentration
  228. Power GaN HEMT degradation: from time-dependent breakdown to hot-electron effects
  229. Evidence of optically induced degradation in gallium nitride optoelectronic devices
  230. Current induced degradation study on state of the art DUV LEDs
  231. Degradation mechanisms of heterogeneous III-V/Silicon loop-mirror laser diodes for photonic integrated circuits
  232. Degradation of GaN-on-GaN vertical diodes submitted to high current stress
  233. Degradation of vertical GaN-on-GaN fin transistors: Step-stress and constant voltage experiments
  234. Failure limits and electro-optical characteristics of GaN-based LEDs under electrical overstress
  235. Impact of dislocations on DLTS spectra and degradation of InGaN-based laser diodes
  236. On-wafer RF stress and trapping kinetics of Fe-doped AlGaN/GaN HEMTs
  237. Reliability of Blue-Emitting Eu2+-Doped Phosphors for Laser-Lighting Applications
  238. Observation of Hot Electron and Impact Ionization in N-Polar GaN MIS-HEMTs
  239. Review of dynamic effects and reliability of depletion and enhancement GaN HEMTs for power switching applications
  240. The 2018 GaN power electronics roadmap
  241. Degradation of vertical GaN FETs under gate and drain stress
  242. Degradation processes and origin in InGaN-based high-power photodetectors
  243. Defect-related degradation of III-V/Silicon 1.55 µm DBR laser diodes
  244. Defect-generation and diffusion in (In)AlGaN-based UV-B LEDs submitted to constant current stress
  245. GaN-Based Laser Wireless Power Transfer System
  246. Positive and negative threshold voltage instabilities in GaN-based transistors
  247. 2DEG Retraction and Potential Distribution of GaN-on-Si HEMTs Investigated Through a Floating Gate Terminal
  248. Hot-Electron Trapping and Hole-Induced Detrapping in GaN-Based GITs and HD-GITs
  249. Physical mechanisms limiting the performance and the reliability of GaN-based LEDs
  250. Internal checkup illumination sources for METIS coronagraph on solar orbiter
  251. Laser-Based Lighting: Experimental Analysis and Perspectives
  252. Understanding the degradation processes of GaN based LEDs submitted to extremely high current density
  253. Degradation of InGaN-based MQW solar cells under 405 nm laser excitation
  254. Evidence of Hot-Electron Effects During Hard Switching of AlGaN/GaN HEMTs
  255. Long-term degradation of InGaN-based laser diodes: Role of defects
  256. Degradation Mechanisms of Heterogeneous III-V/Silicon 1.55- $\mu \text{m}$ DBR Laser Diodes
  257. Chip-Level Degradation of InGaN-Based Optoelectronic Devices
  258. Effect of Varying Three-Dimensional Strain on the Emission Properties of Light-Emitting Diodes Based on (In,Ga)N/GaN Nanowires
  259. Reliability and failure analysis in power GaN-HEMTs: An overview
  260. Degradation of GaN-HEMTs with p-GaN Gate: Dependence on temperature and on geometry
  261. Recombination mechanisms and thermal droop in AlGaN-based UV-B LEDs
  262. Failure of High Power LEDs Submitted to EOS: Dependence on Device Layout and Pulse Properties
  263. Investigation of the time-dependent failure of InGaN-based LEDs submitted to reverse-bias stress
  264. Defect generation in deep-UV AlGaN-based LEDs investigated by electrical and spectroscopic characterisation
  265. GaN HEMTs with p-GaN gate: field- and time-dependent degradation
  266. Defect-Related Degradation of AlGaN-Based UV-B LEDs
  267. Performance-Limiting Traps in GaN-Based HEMTs: From Native Defects to Common Impurities
  268. Degradation of InGaN-based LEDs related to charge diffusion and build-up
  269. Experimental observation of TDDB-like behavior in reverse-biased green InGaN LEDs
  270. Degradation of InGaN laser diodes caused by temperature- and current-driven diffusion processes
  271. High-Resolution Cathodoluminescence Investigation of Degradation Processes in InGaN Green Laser Diodes
  272. Field-dependent degradation mechanisms in GaN-based HEMTs
  273. Degradation of UV-A LEDs: Physical Origin and Dependence on Stress Conditions
  274. Time-Dependent Failure of GaN-on-Si Power HEMTs With p-GaN Gate
  275. Reliability of Gallium Nitride microwave transistors
  276. Experimental Demonstration of Time-Dependent Breakdown in GaN-Based Light Emitting Diodes
  277. Thermal droop in InGaN-based LEDs: physical origin and dependence on material properties
  278. Aging behavior, reliability, and failure physics of GaN-based optoelectronic components
  279. Role of defects in the thermal droop of InGaN-based light emitting diodes
  280. Challenges towards the simulation of GaN-based LEDs beyond the semiclassical framework
  281. Nanoscale Investigation of Degradation and Wavelength Fluctuations in InGaN-Based Green Laser Diodes
  282. A physical model for the reverse leakage current in (In,Ga)N/GaN light-emitting diodes based on nanowires
  283. Reliability of mid-power LEDs for lighting applications
  284. Towards high reliability GaN LEDs: Understanding the physical origin of gradual and catastrophic failure
  285. Analysis of the mechanisms limiting the reliability of retrofit LED lamps
  286. Long-term degradation mechanisms of mid-power LEDs for lighting applications
  287. Failure causes and mechanisms of retrofit LED lamps
  288. Ageing of InGaN-based LEDs: Effects on internal quantum efficiency and role of defects
  289. Degradation mechanisms and lifetime of state-of-the-art green laser diodes
  290. Deep level transient spectroscopy on light-emitting diodes based on (In,Ga)N/GaN nanowire ensembles
  291. Trapping processes related to iron and carbon doping in AlGaN/GaN power HEMTs
  292. Defects in GaN-based LEDs: impact on internal quantum efficiency and on reliability
  293. Degradation of InGaN based green laser kinetics and driving forces diodes
  294. Recoverable degradation of blue InGaN-based light emitting diodes submitted to 3 MeV proton irradiation
  295. Physical effects limiting performance and reliability of GaN High Electron Mobility Transistors
  296. Thermally-activated degradation of InGaN-based laser diodes: Effect on threshold current and forward voltage
  297. ESD on GaN-based LEDs: An analysis based on dynamic electroluminescence measurements and current waveforms
  298. Gate frequency sweep: An effective method to evaluate the dynamic performance of AlGaN/GaN power heterojunction field effect transistors
  299. Deep-Level Characterization in GaN HEMTs-Part I: Advantages and Limitations of Drain Current Transient Measurements
  300. Degradation of AlGaN/GaN HEMT devices: Role of reverse-bias and hot electron stress
  301. Variations in junction capacitance and doping activation associated with electrical stress of InGaN/GaN laser diodes
  302. GaN-HEMTs devices with single- and double-heterostructure for power switching applications
  303. Time- and Field-Dependent Trapping in GaN-Based Enhancement-Mode Transistors With p-Gate
  304. Analysis of the deep level responsible for the degradation of InGaN-based laser diodes by DLTS
  305. Degradation of InGaN lasers: Role of non-radiative recombination and injection efficiency
  306. Investigation of the deep level involved in InGaN laser degradation by deep level transient spectroscopy