What is it about?
ZnS is attractive as a material for low-cost light-emitting diodes. In this study, a non-polar ZnS layer was epitaxially grown on a sapphire substrate by inserting a ZnO buffer layer between ZnS and sapphire. The ZnS and ZnO layers were grown by a mist chemical vapor deposition system with a simple setup operated under atmospheric pressure. The sample was characterized by high-resolution X-ray diffraction measurements including 2θ/ω scans, rocking curves, and reciprocal space mapping. The results showed that an m-plane wurtzite ZnS layer grew epitaxially on an m-plane wurtzite ZnO buffer layer formed on the m-plane sapphire substrate to provide a ZnS/ZnO/sapphire structure.
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This page is a summary of: Structural characteristics of a non-polar ZnS layer on a ZnO buffer layer formed on a sapphire substrate by mist chemical vapor deposition, Japanese Journal of Applied Physics, May 2018, Japan Society of Applied Physics,
DOI: 10.7567/jjap.57.065503.
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