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Aluminum titanium oxide (Al1–xTixOy, an alloy of Al2O3 and TiO2), an attractive high-κ dielectric material, was synthesized by mist chemical vapor deposition, utilizing Al2O3 and TiO2 precursors. X-ray diffraction investigations revealed that the Al1–xTixOy (0 < x < 0.72) films deposited at 400 °C have an amorphous-phase structure. It was found that the bandgap of the Al1–xTixOy films decreases with increasing Ti composition. Moreover, the obtained refractive index, mass density and bandgap of Al2O3 and TiO2 films are all comparable to those reported for high-quality Al2O3 and TiO2 films deposited by atomic layer deposition.
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This page is a summary of: Synthesis and characterization of mist chemical vapor deposited aluminum titanium oxide films, Japanese Journal of Applied Physics, June 2019, Japan Society of Applied Physics,
DOI: 10.7567/1347-4065/ab29e3.
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