What is it about?
Silicon vacancy (Vsi) in SiC is known to act as a single photon source (SPS). In this study, we demonstrated that Vsi can be created at a certain location in SiC with micro meter precision using proton beam writing (PBW) technique.
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Why is it important?
SPS is regarded as an important element for quantum technologies such as quantum sensing, quantum computing etc. Creation of SPSs at a certain location in SiC is very important to develop quantum devices. As a result of this study, we can say that PBW is a useful tool to create Vsi defects in certain locations.
Perspectives
This study demonstrated usefulness of PBW as well as SiC as a promising material for quantum technologies.
Prof. Takeshi Ohshima
Kokuritsu Kenkyu Kaihatsu Hojin Ryoshi Kagaku Gijutsu Kenkyu Kaihatsu Kiko
Read the Original
This page is a summary of: Creation and Functionalization of Defects in SiC by Proton Beam Writing, Materials Science Forum, May 2017, Trans Tech Publications,
DOI: 10.4028/www.scientific.net/msf.897.233.
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