All Stories

  1. Optically Active Defects at the SiC/SiO2 Interface
  2. Thermal evolution of the indentation-induced phases of silicon
  3. Activation and electron spin resonance of near-surface implanted bismuth donors in silicon
  4. Two-dimensional defect mapping of the SiO2/4H−SiC interface
  5. Single Rare-Earth Ions as Atomic-Scale Probes in Ultrascaled Transistors
  6. Microscopic Imaging of the Stress Tensor in Diamond Using in Situ Quantum Sensors
  7. Electron spin relaxation of single phosphorus donors in metal-oxide-semiconductor nanoscale devices
  8. Giant, Anomalous Piezoimpedance in Silicon-on-insulator
  9. Formation of an r8-Dominant Si Material
  10. Photoluminescence in hexagonal silicon carbide by direct femtosecond laser writing
  11. Irradiation-Induced Modification of the Superconducting Properties of Heavily-Boron-Doped Diamond
  12. Deep level transient spectroscopy study of heavy ion implantation induced defects in silicon
  13. Spatial mapping of band bending in semiconductor devices using in situ quantum sensors
  14. Impact of Surface Functionalization on the Quantum Coherence of Nitrogen-Vacancy Centers in Nanodiamonds
  15. Magnetically sensitive nanodiamond-doped tellurite glass fibers
  16. Thermal stability of simple tetragonal and hexagonal diamond germanium
  17. Silicon vacancy creation in SiC by proton beam writing
  18. Deterministic doping
  19. Fluorescent color centers in laser ablated 4H-SiC nanoparticles
  20. Integration of Single-Photon Emitters into 3C-SiC Microdisk Resonators
  21. A review on single photon sources in silicon carbide
  22. Stimulated emission from nitrogen-vacancy centres in diamond
  23. Nanoscale mapping of the three-dimensional deformation field within commercial nanodiamonds
  24. Deterministic Atom Placement by Ion Implantation: Few and Single Atom Devices for Quantum Computer Technology
  25. Optimisation of sample preparation and analysis conditions for atom probe tomography characterisation of low concentration surface species
  26. Optical and electronic properties of sub-surface conducting layers in diamond created by MeV B-implantation at elevated temperatures
  27. Engineering Single Defects in Silicon Carbide Bulk, Nanostructures and Devices
  28. Hydrogen diffusion and segregation during solid phase epitaxial regrowth of preamorphized Si
  29. Activation and control of visible single defects in 4H-, 6H-, and 3C-SiC by oxidation
  30. Silicon Carbide for Novel Quantum Technology Devices
  31. Atomic transport during solid-phase epitaxial recrystallization of amorphous germanium
  32. Single-photon emitting diode in silicon carbide
  33. Atom–Photon Coupling from Nitrogen-vacancy Centres Embedded in Tellurite Microspheres
  34. Erbium-doped slot waveguides containing size-controlled silicon nanocrystals
  35. Single crystalline SiGe layers on Si by solid phase epitaxy
  36. Single atom devices by ion implantation
  37. Evidence for global teleconnections in a late Pleistocene speleothem record of water balance and vegetation change at Sudwala Cave, South Africa
  38. Atom-Photon Coupling from Nitrogen-vacancy Centers Embedded in Tellurite Microspheres
  39. Low-Loss Tellurite Fibers With Embedded Nanodiamonds
  40. Solid-Phase Epitaxy
  41. Nanodiamond in tellurite glass Part II: practical nanodiamond-doped fibers
  42. Development Of nanowire devices with quantum functionalities
  43. Optical spectroscopy of erbium doped monocrystalline vanadium dioxide
  44. (Invited) Solid Phase Epitaxy of GeSn Alloys on Silicon and Integration in MOSFET Devices
  45. Characterisation of nickel germanide formed on amorphous and crystalline germanium
  46. Room Temperature Quantum Emission from Cubic Silicon Carbide Nanoparticles
  47. Single photon emission from ZnO nanoparticles
  48. The Study of Morphological Structure and Raman Spectra of 3C-SiC Membranes
  49. In vivo imaging and tracking of individual nanodiamonds in drosophila melanogaster embryos
  50. Optical switching and photoluminescence in erbium-implanted vanadium dioxide thin films
  51. dLow Temperature of formation of Nickel Germanide by reaction of Nickel and Crystalline Germanium
  52. Investigation of amorphisation of germanium using modeling and experimental processes
  53. Fluorescent emission in different silicon carbide polytypes
  54. A silicon carbide room-temperature single-photon source
  55. Silicon carbide: an advanced platform for next generation quantum devices
  56. Very bright, near-infrared single photon emitters in diamond
  57. Quantum Effects in Silicon Carbide Hold Promise for Novel Integrated Devices and Sensors
  58. Detection of atomic spin labels in a lipid bilayer using a single-spin nanodiamond probe
  59. Defect-induced performance degradation of 4H-SiC Schottky barrier diode particle detectors
  60. Hexagonal germanium formed via a pressure-induced phase transformation of amorphous germanium under controlled nanoindentation
  61. Evidence for theR8Phase of Germanium
  62. Defect levels in low-doped 4H-SiC Schottky barrier diodes detected by using alpha particles
  63. Fabrication of single photon centres in silicon carbide
  64. Raman study on the phase transformations of the meta-stable phases of Si induced by indentation
  65. Laser-beam-induced current microscopy of electric fields in natural minerals caused by impurity zonation and structural defects
  66. Fabrication and characterization of PECVD silicon nitride for RF MEMS applications
  67. Dopant effects on the photoluminescence of interstitial-related centers in ion implanted silicon
  68. Dopant effects on solid phase epitaxy in silicon and germanium
  69. Single-Ion Implantation for the Development of Si-Based MOSFET Devices with Quantum Functionalities
  70. Real-time in situ study of hydrogen diffusion in amorphous Si formed by ion implantation
  71. Temperature dependence of Raman scattering from the high-pressure phases of Si induced by indentation
  72. Towards hybrid diamond optical devices
  73. Engineering chromium-related single photon emitters in single crystal diamonds
  74. Effect of boron on formation of interstitial-related luminescence centres in ion implanted silicon
  75. Advanced germanium devices: The development of materials and processing
  76. Comparison between implanted boron and phosphorus in silicon wafers.
  77. Deep-level transient spectroscopy study of channelled boron implantation in silicon.
  78. Nickel germanide formation via solid phase epitaxial regrowth of amorphous germanium
  79. Photoluminescense of B and P doped Si nanocrystals fabricated by ion implantation
  80. Imaging and Quantum-Efficiency Measurement of Chromium Emitters in Diamond
  81. Hydrogen refinement during solid phase epitaxy of buried amorphous silicon layers
  82. Drain current modulation in a nanoscale field-effect-transistor channel by single dopant implantation
  83. Impurity mapping in sulphide minerals using Time-resolved Ion Beam Induced Current imaging
  84. Chromium single-photon emitters in diamond fabricated by ion implantation
  85. Deep level transient spectroscopy study for the development of ion-implanted silicon field-effect transistors for spin-dependent transport
  86. Deep level transient spectroscopy study of defects at Si/SiO2 and Si/Si3N4 interfaces
  87. Effect of boron on interstitial-related luminescence centers in silicon
  88. Hydrogen in amorphous Si and Ge during solid phase epitaxy
  89. Single Ion Implantation into Si-Based Devices
  90. Recent Insights In Solid Phase Epitaxy of Silicon and Germanium
  91. Modeling of Hydrogen Diffusion And Segregation in Amorphous Silicon During Solid Phase Epitaxy
  92. Intrinsic and boron-enhanced hydrogen diffusion in amorphous silicon formed by ion implantation
  93. Dopant enhanced H diffusion in amorphous silicon and its effect on the kinetics of solid phase epitaxy
  94. Intrinsic and dopant-enhanced solid-phase epitaxy in amorphous germanium
  95. Dislocation related band-edge photoluminescence in boron-implanted silicon
  96. Dopant-enhanced solid-phase epitaxy in buried amorphous silicon layers
  97. Modeling the effect of hydrogen infiltration on the asymmetry in arsenic-enhanced solid phase epitaxy in silicon
  98. Kinetics of arsenic-enhanced solid phase epitaxy in silicon
  99. Ion-channeling and Raman scattering study of damage accumulation in silicon
  100. Collapse of nanocavities studied by ion-channeling and Raman spectroscopy
  101. Ion channelling and Raman scattering study of self-implanted silicon