Interface state density in mist chemical vapor deposited Al2O3/AlGaN/GaN structure

What is it about?

Uniform thickness Al2O3 thin films have been deposited by eco-friendly mist CVD. The obtained Al2O3 film has an optical band gap value of more than 6.5 eV and a refractive index of 1.64 at 633 nm. The combination of capacitance–voltage (C–V) fitting method with non-linear least-squares algorithm, frequency dispersion, photo-assisted, and proposed reverse bias-assisted C–V methods revealed interface state densities ranging from 1 × 1012 to 3 × 1013 cm−2eV−1 along the mist-Al2O3/AlGaN interface. These values are comparable to those reported for atomic layer deposited Al2O3 thin films.

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