This shareable PDF can be hosted on any platform or network and is fully compliant with publisher copyright.
This publication has not yet been explained in plain language by the author(s). However, you can still read the publication.
If you are one of the authors, claim this publication so you can create a plain language summary to help more people find, understand and use it.
This page is a summary of: Cumulative Hot-Electron Trapping in GaN-Based Power HEMTs Observed by an Ultra-Fast (10V/ns) on-Wafer Methodology, IEEE Journal of Emerging and Selected Topics in Power Electronics, January 2021, Institute of Electrical & Electronics Engineers (IEEE),
DOI: 10.1109/jestpe.2021.3077127.
You can read the full text:
The following have contributed to this page
