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This page is a summary of: Negative Activation Energy of Gate Reliability in Schottky-Gate p-GaN HEMTs: Combined Gate Leakage Current Modeling and Spectral Electroluminescence Investigation, IEEE Journal of the Electron Devices Society, January 2024, Institute of Electrical & Electronics Engineers (IEEE),
DOI: 10.1109/jeds.2024.3454334.
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