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High-k dielectric aluminum titanium oxide (AlTiO, an alloy of Al2O3 and TiO2 ) films were obtained by mist chemical vapor deposition (mist-CVD), utilizing Al2O3 and TiO2 precursors. By X-ray fluorescence (XRF) investigations, atomic composition ratios of Al and Ti ratios in the AlxTiyO films were verified. X-ray diffraction (XRD) revealed that the AlxTiyO films deposited at 400 °C has amorphous-phase structure. It was shown that the refractive index and mass density of the AlxTiyO films increases with increase in the Ti composition. Bandgap of the AlxTiyO films was also estimated from X-ray photoelectron spectroscopy (XPS) and ultraviolet-visible spectroscopy. It was found that the bandgap of the AlxTiyO films decrease with increase in the Ti composition. Moreover, the obtained refractive index, mass density and bandgap of Al2O3 and TiO2 films are all comparable to those reported for high-quality Al2O3 and TiO2 films deposited by ALD, thereby demonstrating the efficacy of using mist-CVD in synthesizing films having almost the same properties as those prepared by the more mature ALD.

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This page is a summary of: Synthesis and characterization of AlTiO films by mist-CVD, May 2019, Institute of Electrical & Electronics Engineers (IEEE),
DOI: 10.1109/iciprm.2019.8819248.
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