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Tin oxide (SnO2) is an n-type wide band-gap semiconductor with excellent properties such as optical, electrical and chemical properties. In this research, SnO2 thin films were grown on m-plane sapphire substrates by mist chemical vapor deposition. However, it was difficult to deposit high quality SnO2 films because of the large lattice mismatch and the large difference in the thermal expansion coefficient between the SnO2 film and the sapphire substrate. To improve the quality of SnO2 films, we inserted a SnO2 buffer layer to solve the lattice mismatch problem between the substrate and the film. We found that the surface morphologies of SnO2 films with the buffer layers were smoother than the films without the buffer layers. Furthermore, the full width at half maximum (FWHM) of an X-ray ω-rocking curve for the SnO2 thin film was reduced obviously. Thus, the crystal quality of SnO2 films was much improved by introducing the buffer layers between the substrate and the thin films.
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This page is a summary of: Effect of Buffer Layer on Improvement of SnO2 Thin Film on Sapphire Substrate Formed by Mist Chemical Vapor Deposition, May 2019, Institute of Electrical & Electronics Engineers (IEEE),
DOI: 10.1109/iciprm.2019.8819187.
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