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Crystal quality of ZnO films grown by mist-CVD were improved by introducing ZnO buffer layers on sapphire substrates. The ZnO films were grown by high-speed rotation-type mist-CVD with ZnCl2 aqueous solution, which provided uniform epitaxial layers over 2-inch wafers. As a buffer layer, it is necessary to form small grains of crystal. Therefore, we attempted to grow the ZnO buffer layers using Zn(CH3COO)2 aqueous solution, which provide a small grain size of about 100 nm. By using of this buffer layer, full width at half maximum of an X-ray ω-rocking curve for ZnO film was reduced from 0.69° to 0.38°, showing improvement of the crystal quality.
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This page is a summary of: Improvement of m-plane ZnO films formed on buffer layers on sapphire substrates by mist chemical vapor deposition, June 2016, Institute of Electrical & Electronics Engineers (IEEE),
DOI: 10.1109/iciprm.2016.7528689.
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