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Tin dioxide (SnO2) thin films, as a candidate for realizing next-generation power and optical devices, were grown on 2-inch diameter m-plane sapphire substrates by mist chemical vapor deposition at atmospheric pressure. The SnO2 thin films were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD) in θ-2θ and ø scanning modes, and electron backscatter diffraction (EBSD). Although the SEM images showed the rough surface morphology, it was found from the XRD and EBSD measurements that SnO2 films were epitaxially grown on the substrates under optimized growth condition. The XRD and EBSD results confirm epitaxial SnO2 thin film growth at three typical areas on the substrate. It is likely that the single crystalline SnO2 (001) thin film was formed across the 2-inch sapphire substrate.
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This page is a summary of: SnO2 thin films grown on m-plane sapphire substrate by mist chemical vapor deposition, June 2016, Institute of Electrical & Electronics Engineers (IEEE),
DOI: 10.1109/iciprm.2016.7528687.
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