This shareable PDF can be hosted on any platform or network and is fully compliant with publisher copyright.
This publication has not yet been explained in plain language by the author(s). However, you can still read the publication.
If you are one of the authors, claim this publication so you can create a plain language summary to help more people find, understand and use it.
This page is a summary of: A study of the influence of the annealing processes and interfaces with deposited SiO2 from tetra-ethoxy-silane for reducing the thermal budget in the gate definition of 4H–SiC devices, Thin Solid Films, August 2006, Elsevier,
DOI: 10.1016/j.tsf.2005.12.308.
You can read the full text:
The following have contributed to this page
