What is it about?
The research is based on organic -inorganic hetero-junction that shows I-V characteristic and it show lower leakage current for low annealing temperature followed by p type organic structure formed at room temperature on sputtered ZnO nanostructure deposition on glass/ITO substrate.
Featured Image
Photo by Adrien Converse on Unsplash
Why is it important?
For low temperature or low carbon footprint advancement of opto-electronic device device design and fabrication is potential. The junction formed in this structure is simply Shockley junction. However, the limiting of leakage current is very essential for advancement of inorganic materials contact to low cost organic contact design. It has been successfully done in this research.
Perspectives
It is good approach to develop new nanostructure optical detection device. The junction formed in this structure is simply Shockley junction. However, the limiting of leakage current is very essential for advancement of inorganic materials contact to low cost organic contact design. It has been successfully done in this research.
Dr Bablu K Ghosh
University Malaysia Sabah
Read the Original
This page is a summary of: Low Leakage Current by Solution Processed PTAA-ZnO Transparent Hybrid Hetero-Junction Device, Electronic Materials Letters, July 2020, Springer Science + Business Media,
DOI: 10.1007/s13391-020-00235-y.
You can read the full text:
Contributors
The following have contributed to this page
