All Stories

  1. Net zero emission and sustainable development in electricity: emerging Asia’s Bangladesh context in global perspective
  2. Organic-inorganic PTAA-SiGe transparent optical materials performance analysis for photo device applications
  3. Composition Dependence Structural and Optical Properties of Silicon Germanium (SiχGe1−χ) Thin Films
  4. Photovoltaic technologies photo-thermal challenges: Thin active layer solar cells significance
  5. Organic solar cells pros and cons: Outlooks toward semitransparent cell efficiency and stability
  6. Thin film microstructure materials greater absorption enhances current density and efficiency
  7. This article illustrated the Si photovoltaic cell industrial development pathways.
  8. A Review on Global Emissions by E-Products Based Waste: Technical Management for Reduced Effects and Achieving Sustainable Development Goals
  9. Pathways of simple configuration CdTe solar cell efficiency progression
  10. Morphological, structural and electrical properties of pentacene thin films grown via thermal evaporation technique
  11. TCO and back contact buffer significance to achieve highest open circuit voltage and efficiency of CdTe solar cells
  12. Enhanced Performance of Electrospun PVP:PC71BM Nanofiber for Organic Solar Cells
  13. How organic-inorganic heterostructure is suitable for modern device applications?
  14. High Performance Vertically Aligned Electrospun PVP:PC71BM Nanofiber for Organic Solar Cells
  15. Breakdown Voltage Reduction Analysis with Adopting Dual Channel Vertical Strained SiGe Impact Ionization MOSFET (VESIMOS)
  16. Doping Concentrations Analysis on The Performance of Vertical Strained-SiGe Impact Ionization MOSFET Incorporating Dielectric Pocket (VESIMOS-DP)
  17. An Effective Simulation Analysis of Transient Electromagnetic Multiple Faults
  18. Polycrystalline materials solar cells inherited loss lessening direction is reported
  19. Correlation Study of Structural and Optical Properties of ZnO/PTAA Hybrid Heterojunction Layer
  20. Dual-band polarization convertor based on electromagnetically induced transparency (EIT) effect in all-dielectric metamaterial
  21. How interface and buffer design is important for emerging solar cell is reported
  22. Recent progress in Si hetero-junction solar cell: A comprehensive review
  23. Low Voltage Wireless Power Transfer (WPT) Using Resonant Inductive Coupling Charging for Short-Range Operation
  24. Enhanced Reliability of Vertical Strained Impact Ionization MOSFET Incorporating Dielectric Pocket for Ultra-Sensitive Biosensor Applications
  25. Conductance and Capacitance Responses of Metal-Organic-Metal Structure Based Organic Semiconductor Thin Film
  26. Enhancing efficiency of organic solar cells by interfacial materials modification
  27. Electrical responses of poly(triarylamine) thin film
  28. Does magnetic nano-materials in plane impedance vital for RF loss assessment?
  29. InGaN top solar cell on Si as double junction tandem cell greater conversion efficiency is reported
  30. Novel magnetic core materials impact modelling and analysis for minimization of RF heating loss
  31. Path Planning Algorithm for Manipulators Based on an Improved Backtracking Search Algorithm
  32. Structural properties 3,16-bis triisopropylsilylethynyl (pentacene) (TIPS-pentacene) thin films onto organic dielectric layer using slide coating method
  33. Characterization of vertical strained SiGe impact ionization MOSFET for ultra-sensitive biosensor application
  34. Impact of strained SiGe on the performance of Vertical Strained SiGe Impact Ionization MOSFET incorporating Dielectric Pocket (VESIMOS-DP)
  35. Performance Analysis Based on Different Indium Content for InGaN/Si Hetero-Junction Solar Cell
  36. Performance analysis of single and dual channel vertical strained SiGe impact ionization MOSFET (VESIMOS)
  37. Effects of S/D Doping Concentrations on Vertical Strained-SiGe Impact Ionization MOSFET Incorporating Dielectric Pocket (VESIMOS-DP)
  38. Mitigating Breakdown Voltage with Dual Channel Vertical Strained SiGe Impact Ionization MOSFET (VESIMOS)
  39. Different materials coating effect on responsivity of Si UV photo detector
  40. INTENSE UV ENRICHED PHOTO DETECTION BY HIGHER ENERGY EDGE ATTUNED COATING ON CSI DETECTOR
  41. Optoelectronic properties of improved GaN semiconductor on Si (111) using growth approaches and different interlayer's
  42. Mobility enhancement on Vertical Strained-SiGe Impact Ionization MOSFET incorporating Dielectric Pocket (VESIMOS-DP)
  43. Impact of strain and DP position on the performance of Vertical Strained-SiGe Impact Ionization MOSFET incorporating dielectric pocket (VESIMOS-DP)
  44. Performance Analysis of Vertical Strained-SiGe Impact Ionization MOSFET Incorporating Dielectric Pocket (VESIMOS-DP)
  45. Body doping analysis of vertical strained-SiGe Impact Ionization MOSFET incorporating dielectric pocket (VESIMOS-DP)
  46. Single and dual strained channel analysis of vertical strained — SiGe impact ionization MOSFET (VESIMOS)
  47. Optoelectronic Properties of Improved GaN Semiconductor on Si(111) Using Growth Approaches And Different Interlayer′s
  48. Photo detector junction properties and dynamic aptness analysis — Computational study
  49. Compatibility issues of Si technology with higher band gap materials for RF applications
  50. Enhanced performance analysis of vertical strained-sigeimpact Ionization MOSFET (VESIMOS)
  51. Investigation of incorporating dielectric pocket (DP) on Vertical Strained-SiGe Impact Ionization MOSFET (VESIMOS-DP)
  52. High luminescence efficient Ga polarity domain GaN realized on Si(111) by MOVPE
  53. Organometallic vapor phase epitaxial growth of GaN on a 3c-SiC/Si(111) template formed by C+-ion implantation into Si(111) substrate
  54. A comparative study on In-doping effects for MOVPE GaN films on Si(111) and sapphire substrates
  55. Improvement of the optical properties of GaN epilayers on Si(111): Impact of GaAs layer thickness on Si and pre-growth strategy
  56. Formation of“air-gap” structure at a GaN epilayer/substrate interface by using an InN interlayer
  57. Reduced-stress GaN epitaxial layers grown on Si(111) by using a porous GaN interlayer converted from GaAs