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  1. Numerical analysis and comparison of PTAA and PEDOT: PSS emitter for SiGe solar photovoltaic

    Article • January 2025, American Institute of Physics

    Dr Bablu K Ghosh

  2. Net zero emission and sustainable development in electricity: emerging Asia’s Bangladesh context in global perspective

    Article • Progress in Energy, July 2024, Institute of Physics Publishing

    Dr Bablu K Ghosh

  3. Organic-inorganic PTAA-SiGe transparent optical materials performance analysis for photo device applications

    Article • Optical Materials, January 2024, Elsevier

    Dr Bablu K Ghosh

  4. Composition Dependence Structural and Optical Properties of Silicon Germanium (SiχGe1−χ) Thin Films

    Article • Crystals, May 2023, MDPI AG

    Dr Bablu K Ghosh

  5. Photovoltaic technologies photo-thermal challenges: Thin active layer solar cells significance

    Article • Optik, March 2023, Elsevier

    Dr Bablu K Ghosh

  6. Organic solar cells pros and cons: Outlooks toward semitransparent cell efficiency and stability

    Article • AIP Advances, February 2023, American Institute of Physics

    Dr Bablu K Ghosh

  7. Thin film microstructure materials greater absorption enhances current density and efficiency

    Article • Optical Materials, July 2022, Elsevier

    Dr Bablu K Ghosh

  8. This article illustrated the Si photovoltaic cell industrial development pathways.

    Article • Nano Energy, May 2022, Elsevier

    Dr Bablu K Ghosh

  9. A Review on Global Emissions by E-Products Based Waste: Technical Management for Reduced Effects and Achieving Sustainable Development Goals

    Article • Sustainability, March 2022, MDPI AG

    Dr Bablu K Ghosh

  10. Pathways of simple configuration CdTe solar cell efficiency progression

    Article • Materials Research Express, November 2021, Institute of Physics Publishing

    Dr Bablu K Ghosh

  11. Morphological, structural and electrical properties of pentacene thin films grown via thermal evaporation technique

    Article • Bulletin of Electrical Engineering and Informatics, June 2021, Institute of Advanced Engineering and Science

    Dr Bablu K Ghosh

  12. TCO and back contact buffer significance to achieve highest open circuit voltage and efficiency of CdTe solar cells

    Article • March 2021, Research Square

    Dr Bablu K Ghosh

  13. Enhanced Performance of Electrospun PVP:PC71BM Nanofiber for Organic Solar Cells

    Article • September 2020, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Bablu K Ghosh

  14. How organic-inorganic heterostructure is suitable for modern device applications?

    Article • Electronic Materials Letters, July 2020, Springer Science + Business Media

    Dr Bablu K Ghosh

  15. High Performance Vertically Aligned Electrospun PVP:PC71BM Nanofiber for Organic Solar Cells

    Article • July 2020, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Bablu K Ghosh

  16. Breakdown Voltage Reduction Analysis with Adopting Dual Channel Vertical Strained SiGe Impact Ionization MOSFET (VESIMOS)

    Article • International Journal of Simulation Systems Science & Technology, April 2020, UK Simulation Society

    Dr Bablu K Ghosh

  17. Doping Concentrations Analysis on The Performance of Vertical Strained-SiGe Impact Ionization MOSFET Incorporating Dielectric Pocket (VESIMOS-DP)

    Article • International Journal of Simulation Systems Science & Technology, April 2020, UK Simulation Society

    Dr Bablu K Ghosh

  18. An Effective Simulation Analysis of Transient Electromagnetic Multiple Faults

    Article • Sensors, April 2020, MDPI AG

    Dr Bablu K Ghosh

  19. Polycrystalline materials solar cells inherited loss lessening direction is reported

    Article • Optik, March 2020, Elsevier

    Dr Bablu K Ghosh

  20. Correlation Study of Structural and Optical Properties of ZnO/PTAA Hybrid Heterojunction Layer

    Article • Journal of Physics Conference Series, November 2019, Institute of Physics Publishing

    Dr Bablu K Ghosh

  21. Dual-band polarization convertor based on electromagnetically induced transparency (EIT) effect in all-dielectric metamaterial

    Article • Optics Express, April 2019, Optical Society of America (OSA)

    Dr Bablu K Ghosh

  22. How interface and buffer design is important for emerging solar cell is reported

    Article • International Journal of Energy Research, November 2018, Wiley

    Dr Bablu K Ghosh

  23. Recent progress in Si hetero-junction solar cell: A comprehensive review

    Article • Renewable and Sustainable Energy Reviews, February 2018, Elsevier

    Dr Bablu K Ghosh

  24. Low Voltage Wireless Power Transfer (WPT) Using Resonant Inductive Coupling Charging for Short-Range Operation

    Article • Advanced Science Letters, November 2017, American Scientific Publishers

    Dr Khairul Anuar Mohamad, Dr Bablu K Ghosh

  25. Enhanced Reliability of Vertical Strained Impact Ionization MOSFET Incorporating Dielectric Pocket for Ultra-Sensitive Biosensor Applications

    Article • Advanced Science Letters, November 2017, American Scientific Publishers

    Dr Bablu K Ghosh

  26. Conductance and Capacitance Responses of Metal-Organic-Metal Structure Based Organic Semiconductor Thin Film

    Article • Solid State Phenomena, October 2017, Trans Tech Publications

    Dr Khairul Anuar Mohamad, Dr Bablu K Ghosh

  27. Enhancing efficiency of organic solar cells by interfacial materials modification

    Article • August 2017, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Bablu K Ghosh

  28. Electrical responses of poly(triarylamine) thin film

    Article • EPJ Web of Conferences, January 2017, EDP Sciences

    Dr Khairul Anuar Mohamad, Dr Bablu K Ghosh

  29. Does magnetic nano-materials in plane impedance vital for RF loss assessment?

    Article • January 2017, American Institute of Physics

    Dr Bablu K Ghosh

  30. InGaN top solar cell on Si as double junction tandem cell greater conversion efficiency is reported

    Article • International Journal of Energy Research, March 2016, Wiley

    Dr Bablu K Ghosh, Dr Khairul Anuar Mohamad

  31. Novel magnetic core materials impact modelling and analysis for minimization of RF heating loss

    Article • January 2016, American Institute of Physics

    Dr Khairul Anuar Mohamad, Dr Bablu K Ghosh

  32. Path Planning Algorithm for Manipulators Based on an Improved Backtracking Search Algorithm

    Article • August 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Dr. Jaime Gallardo-Alvarado, Dr Bablu K Ghosh

  33. Structural properties 3,16-bis triisopropylsilylethynyl (pentacene) (TIPS-pentacene) thin films onto organic dielectric layer using slide coating method

    Article • January 2015, American Institute of Physics

    Dr Khairul Anuar Mohamad, Dr Bablu K Ghosh

  34. Characterization of vertical strained SiGe impact ionization MOSFET for ultra-sensitive biosensor application

    Article • August 2014, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Khairul Anuar Mohamad, Dr Bablu K Ghosh

  35. Impact of strained SiGe on the performance of Vertical Strained SiGe Impact Ionization MOSFET incorporating Dielectric Pocket (VESIMOS-DP)

    Article • April 2014, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Khairul Anuar Mohamad, Dr Bablu K Ghosh

  36. Performance Analysis Based on Different Indium Content for InGaN/Si Hetero-Junction Solar Cell

    Article • January 2014, the Institution of Engineering and Technology (the IET)

    Dr Khairul Anuar Mohamad, Dr Bablu K Ghosh

  37. Performance analysis of single and dual channel vertical strained SiGe impact ionization MOSFET (VESIMOS)

    Article • December 2013, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Bablu K Ghosh

  38. Effects of S/D Doping Concentrations on Vertical Strained-SiGe Impact Ionization MOSFET Incorporating Dielectric Pocket (VESIMOS-DP)

    Article • December 2013, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Bablu K Ghosh

  39. Mitigating Breakdown Voltage with Dual Channel Vertical Strained SiGe Impact Ionization MOSFET (VESIMOS)

    Article • December 2013, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Bablu K Ghosh

  40. Different materials coating effect on responsivity of Si UV photo detector

    Article • November 2013, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Bablu K Ghosh

  41. INTENSE UV ENRICHED PHOTO DETECTION BY HIGHER ENERGY EDGE ATTUNED COATING ON CSI DETECTOR

    Article • International Journal of Research in Engineering and Technology, October 2013, eSAT Publishing House

    Dr Bablu K Ghosh

  42. Optoelectronic properties of improved GaN semiconductor on Si (111) using growth approaches and different interlayer's

    Article • World Journal of Engineering, October 2013, Multi-Science Publishing Co. Ltd.

    Dr Bablu K Ghosh

  43. Mobility enhancement on Vertical Strained-SiGe Impact Ionization MOSFET incorporating Dielectric Pocket (VESIMOS-DP)

    Article • October 2013, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Bablu K Ghosh

  44. Impact of strain and DP position on the performance of Vertical Strained-SiGe Impact Ionization MOSFET incorporating dielectric pocket (VESIMOS-DP)

    Article • October 2013, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Bablu K Ghosh

  45. Performance Analysis of Vertical Strained-SiGe Impact Ionization MOSFET Incorporating Dielectric Pocket (VESIMOS-DP)

    Article • September 2013, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Khairul Anuar Mohamad, Dr Bablu K Ghosh

  46. Body doping analysis of vertical strained-SiGe Impact Ionization MOSFET incorporating dielectric pocket (VESIMOS-DP)

    Article • September 2013, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Bablu K Ghosh

  47. Single and dual strained channel analysis of vertical strained — SiGe impact ionization MOSFET (VESIMOS)

    Article • September 2013, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Bablu K Ghosh

  48. Optoelectronic Properties of Improved GaN Semiconductor on Si(111) Using Growth Approaches And Different Interlayer′s

    Article • International Journal of Materials Science and Applications, January 2013, Science Publishing Group

    Dr Bablu K Ghosh

  49. Photo detector junction properties and dynamic aptness analysis — Computational study

    Article • December 2012, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Khairul Anuar Mohamad, Dr Bablu K Ghosh

  50. Compatibility issues of Si technology with higher band gap materials for RF applications

    Article • September 2012, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Khairul Anuar Mohamad, Dr Bablu K Ghosh

  51. Enhanced performance analysis of vertical strained-sigeimpact Ionization MOSFET (VESIMOS)

    Article • September 2012, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Bablu K Ghosh

  52. Investigation of incorporating dielectric pocket (DP) on Vertical Strained-SiGe Impact Ionization MOSFET (VESIMOS-DP)

    Article • September 2012, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Bablu K Ghosh

  53. High luminescence efficient Ga polarity domain GaN realized on Si(111) by MOVPE

    Article • September 2011, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Bablu K Ghosh

  54. Organometallic vapor phase epitaxial growth of GaN on a 3c-SiC/Si(111) template formed by C+-ion implantation into Si(111) substrate

    Article • Journal of Crystal Growth, January 2004, Elsevier

    Dr Bablu K Ghosh

  55. A comparative study on In-doping effects for MOVPE GaN films on Si(111) and sapphire substrates

    Article • physica status solidi c, December 2003, Wiley

    Dr Bablu K Ghosh

  56. Improvement of the optical properties of GaN epilayers on Si(111): Impact of GaAs layer thickness on Si and pre-growth strategy

    Article • physica status solidi c, December 2003, Wiley

    Dr Bablu K Ghosh

  57. Formation of“air-gap” structure at a GaN epilayer/substrate interface by using an InN interlayer

    Article • physica status solidi c, December 2003, Wiley

    Dr Bablu K Ghosh

  58. Reduced-stress GaN epitaxial layers grown on Si(111) by using a porous GaN interlayer converted from GaAs

    Article • Journal of Crystal Growth, March 2003, Elsevier

    Dr Bablu K Ghosh