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The crystal quality of ZnO films grown by mist chemical vapor deposition (mist-CVD) was improved by introducing ZnO buffer layers on sapphire substrates. The ZnO films were grown by high-speed rotation-type mist-CVD with a ZnCl2 aqueous solution, which provided uniform epitaxial layers over 2-inch wafers. To grow the ZnO buffer layers, it is necessary to form small grains of polycrystal. Therefore, we attempted to grow the ZnO buffer layers using a Zn(CH3COO)2 aqueous solution, which provides a small grain size of about 100 nm. By using the buffer layers, the full width at half-maximum of an X-ray ω-rocking curve for the ZnO film was reduced from 0.69° to 0.38°, showing improvement of the crystal quality.
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This page is a summary of: Improvement of m
-plane ZnO films formed on buffer layers on sapphire substrates by mist chemical vapor deposition, physica status solidi (a), January 2017, Wiley,
DOI: 10.1002/pssa.201600603.
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