What is it about?
The wide solar spectrum coverage purpose higher band gap InGaN nanostructure cell on Si how to improve the overall open circuit voltage and series current density is deliberated in this numerical research and analysis. Instead of Si nanostructure how InGaN better saturation drift velocity and mobility can increase current density to support Si cell as series current matching purpose is reported.
Featured Image
Why is it important?
It is too important for series circuit of matching current density. Compared to Si nanostructure, InGaN greater current density is supportive to materialize it.
Perspectives
It is really good numerical analysis of InGaN nanostructure cell how can improve current density and eventually efficiency on Si as bottom solar cell is highlighted.
Dr Bablu K Ghosh
University Malaysia Sabah
Read the Original
This page is a summary of: InGaN photocell significant efficiency enhancement on Si - an influence of interlayer physical properties, International Journal of Energy Research, March 2016, Wiley,
DOI: 10.1002/er.3520.
You can read the full text:
Contributors
The following have contributed to this page
