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  1. Impact of 100 keV proton irradiation on electronic and optical properties of AlGaN/GaN high electron mobility transistors (HEMTs)
  2. Enhancement of electrical characteristics of a-ZTO TFTs based on channel layers produced with alternating precursor concentration
  3. Raman and X-ray Photoelectron Spectroscopy Investigation of the Effect of Gamma-Ray Irradiation on MoS2