All Stories

  1. Cation vacancies and electrical compensation in Sb-doped thin-film SnO2and ZnO

    Article • Semiconductor Science and Technology, January 2015, Institute of Physics Publishing

    Professor Filip Tuomisto

  2. Effect of growth temperature on the epitaxial growth of ZnO on GaN by ALD

    Article • Journal of Crystal Growth, July 2014, Elsevier

    Professor Filip Tuomisto

  3. Vacancy defects in UV‐transparent HVPE‐AlN

    Article • physica status solidi c, February 2014, Wiley

    Professor Filip Tuomisto

  4. Vacancy defect formation in PA‐MBE grown C‐doped InN

    Article • physica status solidi c, February 2014, Wiley

    Professor Filip Tuomisto

  5. Modeling Bi-induced changes in the electronic structure of GaAs 1 − x Bi x alloys

    Article • Physical Review B, December 2013, American Physical Society (APS)

    Professor Filip Tuomisto

  6. Defect identification in semiconductors with positron annihilation: Experiment and theory

    Article • Reviews of Modern Physics, November 2013, American Physical Society (APS)

    Professor Filip Tuomisto

  7. Band-Edge Luminescence Degradation by Low Energy Electron Beam Irradiation in GaN Grown by Metal–Organic Vapor Phase Epitaxy in H2 and N2 Ambients

    Article • Japanese Journal of Applied Physics, November 2013, Institute of Physics Publishing

    Professor Filip Tuomisto

  8. Nitrogen and vacancy clusters in ZnO

    Article • Journal of Materials Research, July 2013, Springer Science + Business Media

    Professor Filip Tuomisto

  9. Origin of band gap bowing in dilute GaAs 1 − x N x and GaP 1 − x N x alloys: A real-space view

    Article • Physical Review B, July 2013, American Physical Society (APS)

    Professor Filip Tuomisto

  10. Defects in nitrides, positron annihilation spectroscopy

    Article • February 2013, SPIE

    Professor Filip Tuomisto

  11. Thermally assisted recovery of low energy electron beam irradiation induced optical degradation of GaN

    Article • physica status solidi c, January 2013, Wiley

    Professor Filip Tuomisto

  12. Open Volume Defects

    Article • January 2013, Elsevier

    Professor Filip Tuomisto

  13. Advances in positron annihilation spectroscopy of Si, Ge and their alloys

    Article • Materials Science in Semiconductor Processing, December 2012, Elsevier

    Professor Filip Tuomisto

  14. Tailoring the Chain Packing in Ultrathin Polyelectrolyte Films Formed by Sequential Adsorption: Nanoscale Probing by Positron Annihilation Spectroscopy

    Article • Journal of the American Chemical Society, November 2012, American Chemical Society (ACS)

    Professor Filip Tuomisto

  15. Study of Unbound HePs Using Exact Diagonalization Technique

    Article • Materials Science Forum, November 2012, Trans Tech Publications

    Professor Filip Tuomisto, Dr Asier Zubiaga

  16. Positron Annihilation Measurements Performed on Oxide-Dispersion Strengthened Steels

    Article • Materials Science Forum, November 2012, Trans Tech Publications

    Professor Filip Tuomisto

  17. Native point defect energetics in GaSb: Enabling p -type conductivity of undoped GaSb

    Article • Physical Review B, October 2012, American Physical Society (APS)

    Professor Filip Tuomisto

  18. Non-destructive examination of helium implanted HTRs construction materials

    Article • Nuclear Engineering and Design, October 2012, Elsevier

    Professor Filip Tuomisto

  19. Study of Defects Generated by Standard- and Plasma-Implantation of Nitrogen Atoms in 4H-SiC Epitaxial Layers

    Article • Materials Science Forum, July 2012, Trans Tech Publications

    Professor Filip Tuomisto

  20. Hybrid functional study of band structures of GaAs 1 − x N x and GaSb 1 − x N x alloys

    Article • Physical Review B, February 2012, American Physical Society (APS)

    Professor Filip Tuomisto

  21. Defect evolution and interplay in n-type InN

    Article • Applied Physics Letters, February 2012, American Institute of Physics

    Professor Filip Tuomisto

  22. Ga-vacancy Activation Under Low Energy Electron Irradiation in GaN-based Materials – ERRATUM

    Article • MRS Proceedings, January 2012, Springer Science + Business Media

    Professor Filip Tuomisto

  23. Ga-vacancy activation under low energy electron irradiation in GaN-based materials

    Article • MRS Proceedings, January 2012, Springer Science + Business Media

    Professor Filip Tuomisto

  24. Interplay of native point defects with ZnO Schottky barriers and doping

    Article • Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena, January 2012, American Vacuum Society

    Professor Filip Tuomisto

  25. Point defect evolution in low‐temperature MOCVD growth of InN

    Article • physica status solidi (a), November 2011, Wiley

    Professor Filip Tuomisto

  26. Defect evolution and impurity migration in Na-implanted ZnO

    Article • Physical Review B, November 2011, American Physical Society (APS)

    Professor Filip Tuomisto, Dr Asier Zubiaga

  27. Identifying vacancy complexes in compound semiconductors with positron annihilation spectroscopy: A case study of InN

    Article • Physical Review B, September 2011, American Physical Society (APS)

    Professor Filip Tuomisto

  28. Tracking defect-induced ferromagnetism in GaN:Gd

    Article • Physical Review B, August 2011, American Physical Society (APS)

    Professor Filip Tuomisto

  29. Back Cover: Towards experimental identification of vacancy complexes in InN (Phys. Status Solidi A 7/2011)

    Article • physica status solidi (a), July 2011, Wiley

    Professor Filip Tuomisto

  30. Towards experimental identification of vacancy complexes in InN

    Article • physica status solidi (a), June 2011, Wiley

    Professor Filip Tuomisto

  31. Vacancy defects in III-nitrides: what does positron annihilation spectroscopy reveal?

    Article • Journal of Physics Conference Series, January 2011, Institute of Physics Publishing

    Professor Filip Tuomisto

  32. In vacancies in InN grown by plasma-assisted molecular beam epitaxy

    Article • Applied Physics Letters, December 2010, American Institute of Physics

    Professor Filip Tuomisto

  33. Defect redistribution in postirradiation rapid-thermal-annealed InN

    Article • Physical Review B, October 2010, American Physical Society (APS)

    Professor Filip Tuomisto

  34. Changing vacancy balance in ZnO by tuning synthesis between zinc/oxygen lean conditions

    Article • Journal of Applied Physics, August 2010, American Institute of Physics

    Professor Filip Tuomisto, Dr Asier Zubiaga

  35. Irradiation‐induced defects in InN and GaN studied with positron annihilation

    Article • physica status solidi (a), May 2010, Wiley

    Professor Filip Tuomisto

  36. Temperature-induced structural transition in-situ in porcine lens — Changes observed in void size distribution

    Article • Biochimica et Biophysica Acta (BBA) - Biomembranes, May 2010, Elsevier

    Professor Filip Tuomisto, Susanne Kristina Wiedmer

  37. Defect studies with positrons: What could we learn on III-nitride heterostructures?

    Article • Journal of Physics Conference Series, April 2010, Institute of Physics Publishing

    Professor Filip Tuomisto

  38. Defect Characterization in Semiconductors with Positron Annihilation Spectroscopy

    Article • January 2010, Springer Science + Business Media

    Professor Filip Tuomisto

  39. Point Defects and Impurities in Bulk GaN Studied by Positron Annihilation Spectroscopy

    Article • January 2010, Springer Science + Business Media

    Professor Filip Tuomisto

  40. Revealing the Microstructural Changes in Tissues In-Situ with Positron Annihilation Spectroscopy

    Article • Biophysical Journal, January 2010, Elsevier

    Professor Filip Tuomisto

  41. Interaction between Na and Li in ZnO

    Article • Applied Physics Letters, December 2009, American Institute of Physics

    Professor Filip Tuomisto

  42. Defect characterization of heavily As and P doped Si epilayers

    Article • physica status solidi c, November 2009, Wiley

    Professor Filip Tuomisto

  43. Vacancy defects probed with positron annihilation spectroscopy in In‐polar InN grown by plasma‐assisted molecular beam epitaxy: Effects of growth conditions

    Article • physica status solidi c, May 2009, Wiley

    Professor Filip Tuomisto

  44. Probing The Microstructure Of Biomaterials With Positrons

    Article • Biophysical Journal, February 2009, Elsevier

    Professor Filip Tuomisto

  45. Probing Biomembranes with Positrons

    Article • The Journal of Physical Chemistry B, January 2009, American Chemical Society (ACS)

    Professor Filip Tuomisto

  46. Evidence of PPII-like Helical Conformation and Glass Transition in a Self-Assembled Solid-State Polypeptide−Surfactant Complex: Poly(l-histidine)/Docylbenzenesulfonic Acid

    Article • Biomacromolecules, April 2008, American Chemical Society (ACS)

    Professor Filip Tuomisto

  47. MONO AND BIMODAL POROSITY BY PYROLYSIS OF BLOCK COPOLYMER-PHENOLIC RESIN COMPLEXES

    Article • March 2008, World Scientific Pub Co Pte Lt

    Professor Filip Tuomisto

  48. Vacancy clustering and acceptor activation in nitrogen-implanted ZnO

    Article • Physical Review B, January 2008, American Physical Society (APS)

    Professor Filip Tuomisto

  49. Stabiliser distribution and efficiency examined by depth profiling polypropylene using a positron beam

    Article • Surface Science, December 2007, Elsevier

    Professor Filip Tuomisto

  50. Defect studies in HVPE GaN by positron annihilation spectroscopy

    Article • February 2007, SPIE

    Professor Filip Tuomisto

  51. Vacancy defect distributions in bulk ZnO crystals

    Article • February 2007, SPIE

    Professor Filip Tuomisto

  52. Hydrothermally Grown Single-Crystalline Zinc Oxide; Characterization and Modification

    Article • MRS Proceedings, January 2007, Springer Science + Business Media

    Professor Filip Tuomisto

  53. Optical and Structural Characteristics of Virtually Unstrained Bulk-Like GaN

    Article • Japanese Journal of Applied Physics, April 2004, Japan Society of Applied Physics

    Professor Filip Tuomisto