All Stories

  1. Effect of DNA serial dilution on the highly precise broadband plasmonic signature of a BALB/c rat’s dried DNA deposited on gold thin film
  2. Comparative Study on Planar Type-II Strained-Layer Superlattice Infrared Photodetectors Fabricated by Ion-Implantation
  3. Planar Strained Layer Superlattice Infrared Photodetectors Fabricated by Ion-Implantation
  4. Students’ negative emotions and their rational and irrational behaviors during COVID-19 outbreak
  5. Low Noise Short Wavelength Infrared Avalanche Photodetector Using SB-Based Strained Layer Superlattice
  6. Mid-wavelength infrared avalanche photodetector with AlAsSb/GaSb superlattice
  7. Performance analysis of infrared heterojunction phototransistors based on Type-II superlattices
  8. Band-structure-engineered high-gain LWIR photodetector based on a type-II superlattice
  9. Multi-band SWIR-MWIR-LWIR Type-II superlattice based infrared photodetector
  10. Avalanche Photodetector Based on InAs/InSb Superlattice
  11. Resonant cavity enhanced heterojunction phototransistors based on type-II superlattices
  12. Demonstration of Planar Type-II Superlattice-Based Photodetectors Using Silicon Ion-Implantation
  13. High performance InAs/InAsSb Type-II superlattice mid-wavelength infrared photodetectors with double barrier
  14. Type-II superlattice-based heterojunction phototransistors for high speed applications
  15. Planar nBn type-II superlattice mid-wavelength infrared photodetectors using zinc ion-implantation
  16. Double-stadium Si-MZI racetrack microring resonator circuits: way to generate optical digital patterns
  17. High performance Zn-diffused planar mid-wavelength infrared type-II InAs/InAs1−xSbx superlattice photodetector by MOCVD
  18. Transport Modelling of Multi-Phase Fluid Flow in Porous Media for Enhanced Oil Recovery
  19. Mid-wavelength infrared high operating temperature pBn photodetectors based on type-II InAs/InAsSb superlattice
  20. High-speed short wavelength infrared heterojunction phototransistors based on type II superlattices
  21. High speed antimony-based superlattice photodetectors transferred on sapphire
  22. MOCVD grown β-Ga2O3 metal-oxide-semiconductor field effect transistors on sapphire
  23. Demonstration of mid-wavelength infrared nBn photodetectors based on type-II InAs/InAs1-xSbx superlattice grown by metal-organic chemical vapor deposition
  24. Silicon racetrack resonator based on nonlinear material
  25. Investigation of surface leakage reduction for small pitch shortwave infrared photodetectors
  26. Extended short wavelength infrared heterojunction phototransistors based on type II superlattices
  27. Effect of lateral Gate Design on the Performance of Junctionless Lateral Gate Transistors
  28. Antimonite-based gap-engineered type-II superlattice materials grown by MBE and MOCVD for the third generation of infrared imagers
  29. Half panda waveguide structure in the generation of four-wave mixing
  30. Type–II superlattices base visible/extended short–wavelength infrared photodetectors with a bandstructure–engineered photo–generated carrier extractor
  31. Fabrication of 12 µm pixel-pitch 1280 × 1024 extended short wavelength infrared focal plane array using heterojunction type-II superlattice-based photodetectors
  32. Suppressing Spectral Crosstalk in Dual-Band Long- Wavelength Infrared Photodetectors With Monolithically Integrated Air-Gapped Distributed Bragg Reflectors
  33. High quantum efficiency mid-wavelength infrared type-II InAs/InAs1−xSbx superlattice photodiodes grown by metal-organic chemical vapor deposition
  34. High Frequency Extended Short-Wavelength Infrared Heterojunction Photodetectors Based on InAs/GaSb/AlSb Type-II Superlattices
  35. On comparison of the temperature sensitivity of SU-8-based triple-arm MZI against straight rib optical waveguides patterned on silicon wafer
  36. Demonstration of long wavelength infrared type-II InAs/InAs1-xSbx superlattices photodiodes on GaSb substrate grown by metalorganic chemical vapor deposition
  37. Thin-Film Antimonide-Based Photodetectors Integrated on Si
  38. nBn extended short-wavelength infrared focal plane array
  39. Type-II InAs/GaSb/AlSb superlattice-based heterojunction phototransistors: back to the future
  40. Type-II superlattice-based extended short-wavelength infrared focal plane array with an AlAsSb/GaSb superlattice etch-stop layer to allow near-visible light detection
  41. Effect of Channel Width Variation on Electrical Characteristics of Double Lateral Gate Junctionless Transistors; A Numerical Study
  42. Optically-Pumped Single-Mode Deep-Ultraviolet Microdisk Lasers With AlGaN-Based Multiple Quantum Wells on Si Substrate
  43. Bias–selectable nBn dual–band long–/very long–wavelength infrared photodetectors based on InAs/InAs1−xSbx/AlAs1−xSbx type–II superlattices
  44. Extended short-wavelength infrared nBn photodetectors based on type-II InAs/AlSb/GaSb superlattices with an AlAsSb/GaSb superlattice barrier
  45. Background–limited long wavelength infrared InAs/InAs1− xSbxtype-II superlattice-based photodetectors operating at 110 K
  46. Recent advances in InAs/InAs1-xSbx/AlAs1-xSbx gap-engineered type-II superlattice-based photodetectors
  47. Impact of scaling base thickness on the performance of heterojunction phototransistors
  48. Analog/RF Study of Self-aligned In0.53Ga0.47As MOSFET with Scaled Gate Length
  49. Structure and Physical Properties of NiO/Co3O4 Nanoparticles
  50. Mid-wavelength infrared heterojunction phototransistors based on type-II InAs/AlSb/GaSb superlattices
  51. Formation and characterization of ultrafine nanophosphors of lithium tetraborate (Li2B4O7) for personnel and medical dosimetry
  52. InAs/InAs1-xSbxtype-II superlattices for high performance long wavelength infrared detection
  53. High-performance short-wavelength infrared photodetectors based on type-II InAs/InAs1-xSbx/AlAs1-xSbx superlattices
  54. Study of the side gate junctionless transistor in accumulation region
  55. High performance bias-selectable three-color Short-wave/Mid-wave/Long-wave Infrared Photodetectors based on Type-II InAs/GaSb/AlSb superlattices
  56. Single step thermal treatment synthesis and characterization of lithium tetraborate nanophosphor
  57. Fabrication of a novel chromium-iron oxide (Cr2Fe6O12) nanoparticles by thermal treatment method
  58. Nanoengineered thin films of copper for the optical monitoring of urine – a comparative study of the helical and columnar nanostructures
  59. Fabrication and simulation of single crystal p-type Si nanowire using SOI technology
  60. Atomic force microscope base nanolithography for reproducible micro and nanofabrication
  61. Dependency of electrical characteristics on nano gap variation in pinch off lateral gate transistors
  62. Silver Nanoparticle Fabrication by Laser Ablation in Polyvinyl Alcohol Solutions
  63. Growth and characterization of La0.7Na0.3MnO3 thin films prepared by pulsed laser deposition on different substrates
  64. Effect of Geometric Parameters on the Performance of P-Type Junctionless Lateral Gate Transistors
  65. Threshold voltage study of scaled self-aligned In0.53Ga0.47As metal oxide semiconductor field effect transistor for different source/drain doping concentrations
  66. A comprehensive overview on the structure and comparison of magnetic properties of nanocrystalline synthesized by a thermal treatment method
  67. Electrical properties and conduction mechanisms in La2/3Ca1/3MnO3 thin films prepared by pulsed laser deposition on different substrates
  68. Gate Length Variation Effect on Performance of Gate-First Self-Aligned In0.53Ga0.47As MOSFET
  69. Interfacial X-ray photospectrometry study of In0.53Ga0.47As under different passivation treatments for metal oxide semiconductor field effect transistor devices
  70. Numerical study of side gate junction-less transistor in on state
  71. Numerical investigation of channel width variation in junctionless transistors performance
  72. Annealing effects on structural and electrical properties of micro heater conductor element
  73. A simulation study of thickness effect in performance of double lateral gate junctionless transistors
  74. Effect of SiO2 particles on dispersion of montmorillonite (MMT) in polyimide nanocomposite during thermal imidization
  75. Simulation of transport in laterally gated junctionless transistors fabricated by local anodization with an atomic force microscope
  76. Impact of Parameter Variation in Fabrication of Nanostructure by Atomic Force Microscopy Nanolithography
  77. Optical Properties of CdS/PVA Nanocomposite Films Synthesized using the Gamma-Irradiation-Induced Method
  78. Pinch-off mechanism in double-lateral-gate junctionless transistors fabricated by scanning probe microscope based lithography
  79. Numerical investigation and comparison with experimental characterisation of side gate p-type junctionless silicon transistor in pinch-off state
  80. Electrical property comparison and charge transmission in p-type double gate and single gate junctionless accumulation transistor fabricated by AFM nanolithography
  81. Preparation, Characterization and Thermal Degradation of Polyimide (4-APS/BTDA)/SiO2 Composite Films
  82. Study the Characteristic of P-Type Junction-Less Side Gate Silicon Nanowire Transistor Fabricated by Atomic Force Microscopy Lithography
  83. Field effect in silicon nanostructure fabricated by Atomic Force Microscopy nano lithography
  84. Fold Prediction Problem: The Application of New Physical and Physicochemical- Based Features