All Stories

  1. Multiband strain balanced superlattice material system for third generation infrared detectors
  2. Accelerating discovery of tunable optical materials (ATOM)
  3. Infrared focal plane arrays based on two-dimensional materials: possibilities and challenges
  4. Performance enhancement of a triple band SWIR-MWIR-LWIR photodetector
  5. Effect of DNA serial dilution on the highly precise broadband plasmonic signature of a BALB/c rat’s dried DNA deposited on gold thin film
  6. Associated Factors of Worrying About Loneliness Before Death
  7. Comparative Study on Planar Type-II Strained-Layer Superlattice Infrared Photodetectors Fabricated by Ion-Implantation
  8. Planar strained layer superlattice infrared photodetector using ion implantation
  9. Planar Strained Layer Superlattice Infrared Photodetectors Fabricated by Ion-Implantation
  10. Students’ negative emotions and their rational and irrational behaviors during COVID-19 outbreak
  11. Low Noise Short Wavelength Infrared Avalanche Photodetector Using SB-Based Strained Layer Superlattice
  12. Mid-wavelength infrared avalanche photodetector with AlAsSb/GaSb superlattice
  13. Performance analysis of infrared heterojunction phototransistors based on Type-II superlattices
  14. Band-structure-engineered high-gain LWIR photodetector based on a type-II superlattice
  15. Multi-band SWIR-MWIR-LWIR Type-II superlattice based infrared photodetector
  16. Avalanche Photodetector Based on InAs/InSb Superlattice
  17. Resonant cavity enhanced heterojunction phototransistors based on type-II superlattices
  18. Demonstration of Planar Type-II Superlattice-Based Photodetectors Using Silicon Ion-Implantation
  19. High performance InAs/InAsSb Type-II superlattice mid-wavelength infrared photodetectors with double barrier
  20. Type-II superlattice-based heterojunction phototransistors for high speed applications
  21. Planar nBn type-II superlattice mid-wavelength infrared photodetectors using zinc ion-implantation
  22. Double-stadium Si-MZI racetrack microring resonator circuits: way to generate optical digital patterns
  23. High performance Zn-diffused planar mid-wavelength infrared type-II InAs/InAs1−xSbx superlattice photodetector by MOCVD
  24. Transport Modelling of Multi-Phase Fluid Flow in Porous Media for Enhanced Oil Recovery
  25. Mid-wavelength infrared high operating temperature pBn photodetectors based on type-II InAs/InAsSb superlattice
  26. High-speed short wavelength infrared heterojunction phototransistors based on type II superlattices
  27. High speed antimony-based superlattice photodetectors transferred on sapphire
  28. MOCVD grown β-Ga2O3 metal-oxide-semiconductor field effect transistors on sapphire
  29. Demonstration of mid-wavelength infrared nBn photodetectors based on type-II InAs/InAs1-xSbx superlattice grown by metal-organic chemical vapor deposition
  30. Silicon racetrack resonator based on nonlinear material
  31. Investigation of surface leakage reduction for small pitch shortwave infrared photodetectors
  32. Extended short wavelength infrared heterojunction phototransistors based on type II superlattices
  33. Effect of lateral Gate Design on the Performance of Junctionless Lateral Gate Transistors
  34. Antimonite-based gap-engineered type-II superlattice materials grown by MBE and MOCVD for the third generation of infrared imagers
  35. Half panda waveguide structure in the generation of four-wave mixing
  36. Type–II superlattices base visible/extended short–wavelength infrared photodetectors with a bandstructure–engineered photo–generated carrier extractor
  37. Fabrication of 12 µm pixel-pitch 1280 × 1024 extended short wavelength infrared focal plane array using heterojunction type-II superlattice-based photodetectors
  38. Suppressing Spectral Crosstalk in Dual-Band Long- Wavelength Infrared Photodetectors With Monolithically Integrated Air-Gapped Distributed Bragg Reflectors
  39. High quantum efficiency mid-wavelength infrared type-II InAs/InAs1−xSbx superlattice photodiodes grown by metal-organic chemical vapor deposition
  40. High Frequency Extended Short-Wavelength Infrared Heterojunction Photodetectors Based on InAs/GaSb/AlSb Type-II Superlattices
  41. On comparison of the temperature sensitivity of SU-8-based triple-arm MZI against straight rib optical waveguides patterned on silicon wafer
  42. Demonstration of long wavelength infrared type-II InAs/InAs1-xSbx superlattices photodiodes on GaSb substrate grown by metalorganic chemical vapor deposition
  43. Thin-Film Antimonide-Based Photodetectors Integrated on Si
  44. nBn extended short-wavelength infrared focal plane array
  45. Type-II InAs/GaSb/AlSb superlattice-based heterojunction phototransistors: back to the future
  46. Type-II superlattice-based extended short-wavelength infrared focal plane array with an AlAsSb/GaSb superlattice etch-stop layer to allow near-visible light detection
  47. Effect of Channel Width Variation on Electrical Characteristics of Double Lateral Gate Junctionless Transistors; A Numerical Study
  48. Optically-Pumped Single-Mode Deep-Ultraviolet Microdisk Lasers With AlGaN-Based Multiple Quantum Wells on Si Substrate
  49. Bias–selectable nBn dual–band long–/very long–wavelength infrared photodetectors based on InAs/InAs1−xSbx/AlAs1−xSbx type–II superlattices
  50. Extended short-wavelength infrared nBn photodetectors based on type-II InAs/AlSb/GaSb superlattices with an AlAsSb/GaSb superlattice barrier
  51. Background–limited long wavelength infrared InAs/InAs1− xSbxtype-II superlattice-based photodetectors operating at 110 K
  52. Recent advances in InAs/InAs1-xSbx/AlAs1-xSbx gap-engineered type-II superlattice-based photodetectors
  53. Impact of scaling base thickness on the performance of heterojunction phototransistors
  54. Analog/RF Study of Self-aligned In0.53Ga0.47As MOSFET with Scaled Gate Length
  55. Structure and Physical Properties of NiO/Co3O4 Nanoparticles
  56. Mid-wavelength infrared heterojunction phototransistors based on type-II InAs/AlSb/GaSb superlattices
  57. Formation and characterization of ultrafine nanophosphors of lithium tetraborate (Li2B4O7) for personnel and medical dosimetry
  58. InAs/InAs1-xSbxtype-II superlattices for high performance long wavelength infrared detection
  59. High-performance short-wavelength infrared photodetectors based on type-II InAs/InAs1-xSbx/AlAs1-xSbx superlattices
  60. Study of the side gate junctionless transistor in accumulation region
  61. High performance bias-selectable three-color Short-wave/Mid-wave/Long-wave Infrared Photodetectors based on Type-II InAs/GaSb/AlSb superlattices
  62. Single step thermal treatment synthesis and characterization of lithium tetraborate nanophosphor
  63. Fabrication of a novel chromium-iron oxide (Cr2Fe6O12) nanoparticles by thermal treatment method
  64. Nanoengineered thin films of copper for the optical monitoring of urine – a comparative study of the helical and columnar nanostructures
  65. Fabrication and simulation of single crystal p-type Si nanowire using SOI technology
  66. Atomic force microscope base nanolithography for reproducible micro and nanofabrication
  67. Dependency of electrical characteristics on nano gap variation in pinch off lateral gate transistors
  68. Silver Nanoparticle Fabrication by Laser Ablation in Polyvinyl Alcohol Solutions
  69. Growth and characterization of La0.7Na0.3MnO3 thin films prepared by pulsed laser deposition on different substrates
  70. Effect of Geometric Parameters on the Performance of P-Type Junctionless Lateral Gate Transistors
  71. Threshold voltage study of scaled self-aligned In0.53Ga0.47As metal oxide semiconductor field effect transistor for different source/drain doping concentrations
  72. A comprehensive overview on the structure and comparison of magnetic properties of nanocrystalline synthesized by a thermal treatment method
  73. Electrical properties and conduction mechanisms in La2/3Ca1/3MnO3 thin films prepared by pulsed laser deposition on different substrates
  74. Gate Length Variation Effect on Performance of Gate-First Self-Aligned In0.53Ga0.47As MOSFET
  75. Interfacial X-ray photospectrometry study of In0.53Ga0.47As under different passivation treatments for metal oxide semiconductor field effect transistor devices
  76. Numerical study of side gate junction-less transistor in on state
  77. Numerical investigation of channel width variation in junctionless transistors performance
  78. Annealing effects on structural and electrical properties of micro heater conductor element
  79. A simulation study of thickness effect in performance of double lateral gate junctionless transistors
  80. Effect of SiO2 particles on dispersion of montmorillonite (MMT) in polyimide nanocomposite during thermal imidization
  81. Simulation of transport in laterally gated junctionless transistors fabricated by local anodization with an atomic force microscope
  82. Impact of Parameter Variation in Fabrication of Nanostructure by Atomic Force Microscopy Nanolithography
  83. Optical Properties of CdS/PVA Nanocomposite Films Synthesized using the Gamma-Irradiation-Induced Method
  84. Pinch-off mechanism in double-lateral-gate junctionless transistors fabricated by scanning probe microscope based lithography
  85. Numerical investigation and comparison with experimental characterisation of side gate p-type junctionless silicon transistor in pinch-off state
  86. Electrical property comparison and charge transmission in p-type double gate and single gate junctionless accumulation transistor fabricated by AFM nanolithography
  87. Preparation, Characterization and Thermal Degradation of Polyimide (4-APS/BTDA)/SiO2 Composite Films
  88. Study the Characteristic of P-Type Junction-Less Side Gate Silicon Nanowire Transistor Fabricated by Atomic Force Microscopy Lithography
  89. Field effect in silicon nanostructure fabricated by Atomic Force Microscopy nano lithography
  90. Fold Prediction Problem: The Application of New Physical and Physicochemical- Based Features