What is it about?
Coordination of developments among technology, design, and systems provides solutions for realizing new system and device features with low power consumption and high performance. Critical dimension (CD), that is, the smallest geometrical feature, has already reduced in two dimensions. A significant issue for CD control at the bottom of features such as holes is becoming to be raised in semiconductor manufacturing.
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Why is it important?
Integration of high-density circuits in a small chip demands to decrease feature sizes and increase the aspect ratios of interconnecting structures. Processor and memory technologies are continuing to scale in dimensions, being available more than 400 die and 50 trillion features on a 300-mm wafer. Manufacturers are continuing to shrink feature sizes and to scale vertically to increase the bit density and meet demand while maintaining a cost advantage over their competition.
Perspectives
Recent advances in fabrication technologies using atomic layer processing for plasma etching of high-aspect ratio (HAR) features in semiconductor manufacture are discussed. In future, feed-back and feed-forward in the cycle of computation and experiments will realize to construct a virtual experiment-environment and can afford to discovery an optimum with the artificial intelligence (AI) automation using fundamental data sets.
Dr Kenji Ishikawa
Nagoya University
Read the Original
This page is a summary of: Progress in nanoscale dry processes for fabrication of high-aspect-ratio features: How can we control critical dimension uniformity at the bottom?, Japanese Journal of Applied Physics, May 2018, Japan Society of Applied Physics,
DOI: 10.7567/jjap.57.06ja01.
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