What is it about?
This data is of paramount importance for the defect engineering in the semiconductor technology. In this work we present data for point radiation phosphorus-vacancy complexes which have been elusive from observation for more than four dacades in silicon single crystals.
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Why is it important?
The data demonstrate a wide variety of opportunities for using non-destructive/non-contac methods of the positron annihilation in the defect engineering of silicon and othe semiconductor materilas.
Perspectives
The data obtained open a new way for studying the radiation damages in silicon and other materials of microelectronics
Dr. Nikolay Arutyunov
Martin-Luther-Universitat Halle-Wittenberg
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This page is a summary of: Similarity of Atomic Configurations of Thermally Stable Positron-Sensitive Complexes Produced with 0.9-MeV Electrons and 15-MeV Protons in <i>n–</i>FZ<i>–</i>Si:P Crystals, Solid State Phenomena, October 2015, Trans Tech Publications,
DOI: 10.4028/www.scientific.net/ssp.242.296.
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