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This page is a summary of: Elementary Screw and Mixed-Type Dislocations in 4H-SiC Characterized by X-Ray Topography Taken with Six Equivalent 11-28 g-Vectors and a Comparison to Etch Pit Evaluation, Materials Science Forum, May 2017, Trans Tech Publications,
DOI: 10.4028/www.scientific.net/msf.897.185.
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