This shareable PDF can be hosted on any platform or network and is fully compliant with publisher copyright.
This publication has not yet been explained in plain language by the author(s). However, you can still read the publication.
If you are one of the authors, claim this publication so you can create a plain language summary to help more people find, understand and use it.
This page is a summary of: The Impact of Oxygen Flow Rate on the Oxide Thickness and Interface Trap Density in 4H-SiC MOS Capacitors, Materials Science Forum, October 2014, Trans Tech Publications,
DOI: 10.4028/www.scientific.net/msf.806.149.
You can read the full text:
The following have contributed to this page
