An Operational Transconductance Amplifiers Based Sinusoidal Oscillator Using CNTFETs

What is it about?

A new sinusoidal oscillator using Carbon Nanotube Field Effect Transistors (CNTFET) based Operational Transconductance Amplifiers (CNOTA) with grounded capacitors is presented in this paper. The proposed current-mode oscillator thus implemented and having grounded capacitor feature, fulfils the need for realizations of systems used in combination with various other systems/ subsystems - both voltage-mode and current mode. It also ensures simplicity in implementation by using a single-ended CNOTA. The analytical model is given for the circuit leading to fulfilment of the condition of oscillation at tuned frequency. The proposed sinusoidal oscillator is primarily used in the field of signal dispensation applications, telecommunication networks, communication-equipment and control modules. The benefits derived from the introduced model are validated by simulation carried out at a supply voltage of ±1.8 V in Cadence virtuoso using spectre model libraries. They are further tested with the aid of 32 nm model of Carbon Nanotube Field Effect Transistor (CNTFET) technology obtained through open source. The proposed design (and the model provided) is found to be in good agreement with the obtained results.

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Why is it important?

One novel oscillator circuit built by using three CNOTAs with grounded capacitors for sinusoidal waveform generation is proposed in this paper. The design uses CNTFET technology models with 32 nm Spectre libraries taking supply voltage to be ±1.8 V. By varying either the capacitors C1, C2 or bias current IB, the oscillator frequency can be tuned or adjusted. Tunability of grounded capacitors is an attractive feature of the design as it provides an easy option for digital control by programmable switched capacitor array (PSCA). The component’s sensitivity is very good; making it there by a candidate design for integration. A number of applications are highlighted for the proposed configuration from electronic and communication domains with special emphasis on power conversion applications, telecommunication networks and sensor modules applications. The excellent temperature sensitivity, linearity and minimization of leakage justify the use of more expensive CNTFET technology to promise a superior design of choice for the future.