What is it about?
PbSe is A4B6 group narrow gap material with energy gap about 0.3 eV. InSe is A3B6 group with energy gap 1.3 eV and layered structure. In the layers, covalent bonds are present, while Van Der Waals force acts between layers. When Pb ratio is high and the In ratio is low we have PbSe, but with nanostructure in present work. Hence better electrical properties are expected. In the case of higher indium ratio and lower Pb ratio, we obtain really a mixture of PbSe and InSe, with expected lower conductivity. Authors revised all patents relating to the effect of In addition to PbSe thin films.
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Why is it important?
The aim of the present work is to study the effect of In substitution on the structural, electrical and optical properties of PbSe nanocrystalline films.
Perspectives
XRD of Pb32.54In29.55Se38.01 and Pb55.03In6.58Se38.39 films showed polycrystalline cubic structure. The optical band gap for Pb55.03In6.58Se38.39 and Pb32.54In29.55Se38.01 films is determined as 1.77 and 1.67 eV, respectively.
Dr a m mansour
national research center
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This page is a summary of: Structural, Optical and Electrical Properties of Nanocrystalline PbSe: In Films, Recent Patents on Materials Science, December 2018, Bentham Science Publishers,
DOI: 10.2174/1874464811666181005100615.
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