A New Model for Negative Bias Temperature Instability in MOS structure

What is it about?

A physical based model for the negative bias temperature instability is proposed. The proposed model can predict the most accepted features of the degradation such as fast degradation recovery, as well as the long term recovery component. The model reconciles the two widely and experimentally proved features, which are Hydrogen diffusion in the oxide in one hand and hole trapping and detrapping by oxide defects in the other hand.

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Photo by Alexandre Debiève on Unsplash

Photo by Alexandre Debiève on Unsplash

Why is it important?

This model predicts that both hydrogen and hole trapping/detrapping in the oxide defects plays a key role in negative bias temperature degradation. The fast component is ascribed to hole trapping and detrapping in the oxide E’ centers and interface dangling bonds generation. The permanent component is attributed the E’-H complex and limited the back diffusion of the hydrogen in the oxide to passivate Pb centers.

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