What is it about?
Stability of functional devices such as light-emitting devices and chemical or biological sensors is an important issue nowadays. Nanostructured silicon made using top-down methodologies is being employed as a material to develop such systems, but surface stability to external ambient conditions is still an open question. One of those important conditions is oxidation. Although there exist models accounting for the role of oxide layers on semiconductor systems, experimental data is still required to provide further useful information. In this paper, we perform oxidation processes to light-emitting nanostructured silicon and study the contribution of quantum dots and quantum wires to photoluminescence as surface oxidation evolves. Cross-correlations with infrared spectroscopy are also included.
Featured Image
Photo by Timothy Dykes on Unsplash
Why is it important?
This work can throw some light concerning stability of eventual sensing devices made from nanostructured silicon.
Perspectives
This papers uses a model that merges two other models. One deals with the effect of nanocrystals sizes of silicon in the photoluminescence (PL) spectrum and the other accounts for the surface oxidation effect on PL. The result is that one can explain the PL spectrum shape as build using three components: quantum dots, quantum wires and surface oxidation effects. This kind of studies can lead to a better comprehension of oxidation dynamics, very useful in the design of chemical sensors of pollutants in air or water.
Prof. Dr. Arturo Ramirez-Porras
Universidad de Costa Rica
Read the Original
This page is a summary of: Quantum Dots and Quantum Wires Contribution on Photoluminescent Properties of Nanostructured Oxidized Silicon, MRS Advances, January 2017, Cambridge University Press,
DOI: 10.1557/adv.2017.276.
You can read the full text:
Contributors
The following have contributed to this page
