What is it about?
These defects, namely, group-V-impurity-vacancy complexes, play crucial role in degrading parameters of the germanium-based semiconductor devices (including detectors of the gamma-radiation) functioning in the conditions of irradiation by fast particles. These defects do not yield to studying by traditional methods of defects characterization such as EPR-, IR-spectroscopy and some others. We have applied the spectroscopy of the angular correlation of the electron-positron annihilation radiation (ACAR) and determined for the first time by the positron probing the configurational parameters of the abovementioned complexes in gamma-irradiated germanium.
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Why is it important?
The knowledge of the configurational parameters of group-V-impurity-vacancy complexes (V=P, As, Sb, and Bi) is of paramount importance in determining the radiation resistance of the germanium-based devices of microelectronics and spintronics as well as in choosing the strategy in gettering and defect engineering in the semiconductor technology.
Perspectives
The approach developed is perspective one for non-contact/non-destructive way of the material characterisation/testing at the different stages of the technology of fabrication of the germanium-based devices.
Dr. Nikolay Arutyunov
Martin-Luther-Universitat Halle-Wittenberg
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This page is a summary of: Integrabilidade quântica do modelo de Alday-Arutyunov-Frolov, Universidade de Sao Paulo Sistema Integrado de Bibliotecas - SIBiUSP,
DOI: 10.11606/t.43.2015.tde-07072015-112941.
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